The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
D Biro - One of the best experts on this subject based on the ideXlab platform.
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19 7 efficient all screen printed back contact back junction silicon solar cell with aluminum alloyed emitter
IEEE Electron Device Letters, 2011Co-Authors: Robert Woehl, Jonas Krause, Filip Granek, D BiroAbstract:A back-contact back-junction solar cell on n-type silicon with an aluminum-alloyed emitter is introduced, where both structuring and metallization are realized by screen-printing. The Process Sequence for realizing the cell with a pitch of 2 mm is displayed and described. The cell parameters are shown for three different emitter coverages on the rear side (45%, 58%, and 72%). An analysis of the saturation current density Jο of the different areas was carried out on lifetime samples, and the calculated Voc is compared to the measured one. The potentially critical edge of the Al finger is analyzed in a scanning electron microscopy cross section. No damaging of the aluminum paste to the passivation layer and a homogenous p+-layer over the whole finger width is observed. A conversion efficiency of 19.7% is presented for a cell with an aperture area of 16.65 cm2 that was exclusively Processed in Fraunhofer ISE PV-TEC, which is an industrial-like fabrication environment.
Rolf Brendel - One of the best experts on this subject based on the ideXlab platform.
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loss analysis of n type passivated emitter rear totally diffused back junction silicon solar cells with efficiencies up to 21 2
IEEE Journal of Photovoltaics, 2016Co-Authors: Bianca Lim, Till Brendemuhl, Thorsten Dullweber, Rolf BrendelAbstract:In this work, we present screen-printed n-type passivated emitter rear totally diffused (n-PERT) back-junction (BJ) silicon solar cells with efficiencies up to 21.2% on total area of 239 cm2. The Process Sequence is based on that of p-type passivated emitter and rear cells (p-PERC), adding only a boron diffusion at the beginning. We reduce the recombination at the homogeneous phosphorus-doped front surface field by a wet-chemical etch-back of 10–20 nm and apply an advanced five-busbar layout on the front side to increase the energy conversion efficiency. We simulate the performance of the n-PERT BJ solar cell using the conductive boundary model and perform a synergistic efficiency gain analysis to identify the main limitations of our n-PERT BJ solar cells. We observe the biggest gain of 0.72% absolute after eliminating recombination at the P-doped front surface field and find that reducing recombination in general is most important for further improving our n-PERT BJ solar cells.
Martin Hermle - One of the best experts on this subject based on the ideXlab platform.
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back junction back contact n type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus
Applied Physics Letters, 2014Co-Authors: Ralph Muller, Julian Schrof, Christian Reichel, Jan Benick, Martin HermleAbstract:The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a Process Sequence based on a synergistic use of ion implantation and furnace diffusion. This Sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three Processing steps. We observed that implanted phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate Process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.
Robert Woehl - One of the best experts on this subject based on the ideXlab platform.
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19 7 efficient all screen printed back contact back junction silicon solar cell with aluminum alloyed emitter
IEEE Electron Device Letters, 2011Co-Authors: Robert Woehl, Jonas Krause, Filip Granek, D BiroAbstract:A back-contact back-junction solar cell on n-type silicon with an aluminum-alloyed emitter is introduced, where both structuring and metallization are realized by screen-printing. The Process Sequence for realizing the cell with a pitch of 2 mm is displayed and described. The cell parameters are shown for three different emitter coverages on the rear side (45%, 58%, and 72%). An analysis of the saturation current density Jο of the different areas was carried out on lifetime samples, and the calculated Voc is compared to the measured one. The potentially critical edge of the Al finger is analyzed in a scanning electron microscopy cross section. No damaging of the aluminum paste to the passivation layer and a homogenous p+-layer over the whole finger width is observed. A conversion efficiency of 19.7% is presented for a cell with an aperture area of 16.65 cm2 that was exclusively Processed in Fraunhofer ISE PV-TEC, which is an industrial-like fabrication environment.
S D Senturia - One of the best experts on this subject based on the ideXlab platform.
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cad challenges for microsensors microactuators and microsystems
Proceedings of the IEEE, 1998Co-Authors: S D SenturiaAbstract:In parallel with the development of new technologies, new device configurations, and new applications for microsensors, microactuators, and microsystems, also referred to as microelectromechanical devices and systems (MEMS), there has arisen a growing need for computer-aided engineering and design systems. There is a wide range of design problems: Process simulation, solid-body geometric renderings from photomasks and Process descriptions, energetically correct simulations of behavior across multiple coupled energy domains, extraction of lumped low-order models of device behavior, optimization of geometry and Process Sequence, and design of full systems that include MEMS devices. Because of the computational demands of the modeling required to support full computer-aided design (CAD), there is a premium on fast and memory-efficient algorithms that help the designer, both by automating, where possible, complex sets of related tasks and by providing rapid computational prototyping at critical points in the design cycle. This paper presents an overview of the present state of the art in CAD for MEMS, with particular emphasis on the role of macromodels and test structures as part of the design environment.
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cad challenges for microsensors microactuators and microsystems
Proceedings of the IEEE, 1998Co-Authors: S D SenturiaAbstract:In parallel with the development of new technologies, new device configurations, and new applications for microsensors, microactuators, and microsystems, also referred to as microelectromechanical devices and systems (MEMS), there has arisen a growing need for computer-aided engineering and design systems. There is a wide range of design problems: Process simulation, solid-body geometric renderings from photomasks and Process descriptions, energetically correct simulations of behavior across multiple coupled energy domains, extraction of lumped low-order models of device behavior, optimization of geometry and Process Sequence, and design of full systems that include MEMS devices. Because of the computational demands of the modeling required to support full computer-aided design (CAD), there is a premium on fast and memory-efficient algorithms that help the designer, both by automating, where possible, complex sets of related tasks and by providing rapid computational prototyping at critical points in the design cycle. This paper presents an overview of the present state of the art in CAD for MEMS, with particular emphasis on the role of macromodels and test structures as part of the design environment.