The Experts below are selected from a list of 307701 Experts worldwide ranked by ideXlab platform
Norimichi Anazawa - One of the best experts on this subject based on the ideXlab platform.
-
present status of exposure Tool development for low energy electron beam proximity projection lithography
Journal of Photopolymer Science and Technology, 2002Co-Authors: Akihiro Endo, Toyoji Fukui, Akira Higuchi, Haruo Kasahara, Hiroshi Nozue, Nobuo Shimazu, Naoki Yasumitsu, Tsutomu Miyatake, Norimichi AnazawaAbstract:A s-Tool for Low Energy Electron-beam Proximity Projection Lithography (LEEPL)1-2 has been developed for proof of lithography (POL) of mass Production Tool, which is applied to required performance in 100-nm and 70-nm technology node. Major features of system design are an acceleration voltage of 1-5kV, a beam current of 3-20μA, a maximum field size of 40mm x 40mm (effective field size of 25mm x 25mm), a die-by-die alignment system and automatic loader systems for masks and wafers. The throughput is estimated over 20 wafers of 300mmφ per hour. As examples of initial evaluation results, resolution of 45-nm L/S patterns and 48-nmφ hole patterns in resist image were obtained. Alignment experiments are on going now, and overlay accuracy around 20-nm (3σ) over effective area of 8-in. wafer is being expected.
Yanqiu Li - One of the best experts on this subject based on the ideXlab platform.
-
analysis and control of thermal and structural deformation of projection optics for 22 nm euv lithography
Proceedings of SPIE, 2012Co-Authors: Guanghua Yang, Yanqiu LiAbstract:Thirty-five to forty percent incident power will be absorbed by the multilayers of EUV optics which causes thermal deformation of mirrors, consequently affecting the optical performance of projection optics (PO). On the other hand the gravity and mounting of mirrors introduce the structural deformation of mirrors. So the thermal and structural deformations of mirrors are critical issues for extreme ultraviolet lithography (EUVL) at the technology node of 22 nm and below. In this paper, we employ several software packages to study and control the deformation of the PO which is employed in EUVL Production Tool with wafer throughput of one hundred 300 mm wafers per hour for the 22 nm technology. The results show that the deformation of PO is reduced effectively and the imaging performance of the PO is improved.
-
transient thermal and structural deformation and its impact on optical performance of projection optics for extreme ultraviolet lithography
Japanese Journal of Applied Physics, 2007Co-Authors: Ke Liu, Yanqiu Li, Fuchang Zhang, Mingzhe FanAbstract:For extreme ultraviolet lithography (EUVL) targeting 45 nm technology generation and beyond, thermal absorption is the main source of multilayer-coated mirror structural deformation, which will finally cause degradation of lithographic performance. It becomes necessary to consider thermal absorption issue in the design phase of volume Production Tool. Utilizing several commercial and in-house software packages, we have performed a complete transient thermo-mechanical analysis of such effects and its impact on optical performance for volume Production of EUVL. This article presents the simulation results based on wafer throughput model of 100 300 mm wafers per hour for the 32 nm technology generation.
-
thermal and structural deformation and its impact on optical performance of projection optics for extreme ultraviolet lithography
Journal of Vacuum Science & Technology B, 2003Co-Authors: Yanqiu Li, Kazuya Ota, Katsuhiko MurakamiAbstract:Thermal and structural deformation of mirrors becomes an important consideration for extreme ultraviolet lithography (EUVL) when targeting features of 50 nm and below. Such deformation will contribute to the critical dimension control and decrease the performance of the designed system. Multilayer coated mirrors typically absorb 35%–40% of the in-band radiation, which results in the deformation of mirror figures and degrades the performance of the optics. We have employed several software packages to study these effects. This article presents the results for the EUVL Production Tool with wafer throughput of eighty 300 mm wafers per hour for the 35 nm technology generation.
Akihiro Endo - One of the best experts on this subject based on the ideXlab platform.
-
present status of exposure Tool development for low energy electron beam proximity projection lithography
Journal of Photopolymer Science and Technology, 2002Co-Authors: Akihiro Endo, Toyoji Fukui, Akira Higuchi, Haruo Kasahara, Hiroshi Nozue, Nobuo Shimazu, Naoki Yasumitsu, Tsutomu Miyatake, Norimichi AnazawaAbstract:A s-Tool for Low Energy Electron-beam Proximity Projection Lithography (LEEPL)1-2 has been developed for proof of lithography (POL) of mass Production Tool, which is applied to required performance in 100-nm and 70-nm technology node. Major features of system design are an acceleration voltage of 1-5kV, a beam current of 3-20μA, a maximum field size of 40mm x 40mm (effective field size of 25mm x 25mm), a die-by-die alignment system and automatic loader systems for masks and wafers. The throughput is estimated over 20 wafers of 300mmφ per hour. As examples of initial evaluation results, resolution of 45-nm L/S patterns and 48-nmφ hole patterns in resist image were obtained. Alignment experiments are on going now, and overlay accuracy around 20-nm (3σ) over effective area of 8-in. wafer is being expected.
Uwe F W Behringer - One of the best experts on this subject based on the ideXlab platform.
-
low energy electron beam proximity projection lithography leepl the world s first e beam Production Tool leepl 3000
20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2004Co-Authors: Uwe F W BehringerAbstract:Abstract In June 2000 ago the company Accretech and LEEPL corporation decided to develop an E-beam lithography Tool for highthroughput wafer exposure, called LEEPL. In an amazing short time the alpha Tool was built. In 2002 the beta Tool wasinstalled at Accretech. Today the first Production Tool the LEEPL 3000 is ready to be shipped. The 2keV E-beam Tool willbe used in the first lithography strategy to expose (in mix and match mode with optical exposure Tools) critical levels likegate structures, contact holes (CH), and via pattern of the 9Onm and 65nm node.At the SEMATECH EPL workshop on September 22"' in Cambridge, England it was mentioned that the amount of theselevels will increase very rapidly ( 8 in 2007; 13 in 2010 and 17 in 2013).The schedule of the Production Tool for 45nm node is mid 2005 and for the 32nm node 2008. The Figure 1 shows fromleft to right the a-Tool, the 13-Tool and the Production Tool LEEPL 3000. Figure 1 also shows the timetable of the 4 LEEPLForum all held in Japan.Figure 1: View of the a-Tool, 13-Tool and the Production Tool LEEPL 3000
Nobuo Shimazu - One of the best experts on this subject based on the ideXlab platform.
-
present status of exposure Tool development for low energy electron beam proximity projection lithography
Journal of Photopolymer Science and Technology, 2002Co-Authors: Akihiro Endo, Toyoji Fukui, Akira Higuchi, Haruo Kasahara, Hiroshi Nozue, Nobuo Shimazu, Naoki Yasumitsu, Tsutomu Miyatake, Norimichi AnazawaAbstract:A s-Tool for Low Energy Electron-beam Proximity Projection Lithography (LEEPL)1-2 has been developed for proof of lithography (POL) of mass Production Tool, which is applied to required performance in 100-nm and 70-nm technology node. Major features of system design are an acceleration voltage of 1-5kV, a beam current of 3-20μA, a maximum field size of 40mm x 40mm (effective field size of 25mm x 25mm), a die-by-die alignment system and automatic loader systems for masks and wafers. The throughput is estimated over 20 wafers of 300mmφ per hour. As examples of initial evaluation results, resolution of 45-nm L/S patterns and 48-nmφ hole patterns in resist image were obtained. Alignment experiments are on going now, and overlay accuracy around 20-nm (3σ) over effective area of 8-in. wafer is being expected.
