Programming Methodology

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Shyiming Chen - One of the best experts on this subject based on the ideXlab platform.

Jiacai Liu - One of the best experts on this subject based on the ideXlab platform.

Wenhsin Han - One of the best experts on this subject based on the ideXlab platform.

Chengyi Wang - One of the best experts on this subject based on the ideXlab platform.

Themis Prodromakis - One of the best experts on this subject based on the ideXlab platform.

  • multibit memory operation of metal oxide bi layer memristors
    Scientific Reports, 2017
    Co-Authors: Spyros Stathopoulos, Ali Khiat, Maria Trapatseli, Simone Cortese, Alexantrou Serb, Ilia Valov, Themis Prodromakis
    Abstract:

    Emerging nanoionic memristive devices are considered as the memory technology of the future and have been winning a great deal of attention due to their ability to perform fast and at the expense of low-power and -space requirements. Their full potential is envisioned that can be fulfilled through their capacity to store multiple memory states per cell, which however has been constrained so far by issues affecting the long-term stability of independent states. Here, we introduce and evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We propose a Programming Methodology that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states. These states were found to correlate with the transport properties of the introduced barrier layers. We are demonstrating memory cells with up to 6.5 bits of information storage as well as excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile memory applications.

  • multibit memory operation of metal oxide bi layer memristors
    arXiv: Mesoscale and Nanoscale Physics, 2017
    Co-Authors: Spyros Stathopoulos, Ali Khiat, Maria Trapatseli, Simone Cortese, Alexantrou Serb, Ilia Valov, Themis Prodromakis
    Abstract:

    In this work, we evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We introduce a Programming Methodology that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states. We finally demonstrate a 5.5-bit memory cell (47 resistive states) with excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile memory applications.