The Experts below are selected from a list of 19419 Experts worldwide ranked by ideXlab platform
Yung Woo Park - One of the best experts on this subject based on the ideXlab platform.
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A fast and low-power microelectromechanical system-based non-Volatile Memory device.
Nature communications, 2011Co-Authors: Sangwook Lee, Seung Joo Park, Eleanor E. B. Campbell, Yung Woo ParkAbstract:Several new generation Memory devices have been developed to overcome the low performance of conventional silicon-based flash Memory. In this study, we demonstrate a novel non-Volatile Memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash Memory and the power consumption is lower than other Memory devices.
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A fast and low-power microelectromechanical system-based non-Volatile Memory device
Nature Communications, 2011Co-Authors: Seung Joo Park, Eleanor E. B. Campbell, Yung Woo ParkAbstract:Several new generation Memory devices have been developed to overcome the low performance of conventional silicon-based flash Memory. In this study, we demonstrate a novel non-Volatile Memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash Memory and the power consumption is lower than other Memory devices. New Memory devices are being developed to overcome the limitations of conventional silicon-based flash Memory. Here, a non-Volatile Memory design is reported that uses a micromechanical cantilever to charge and discharge a floating gate, which controls charge transport through a carbon nanotube field-effect transistor.
Seung Joo Park - One of the best experts on this subject based on the ideXlab platform.
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A fast and low-power microelectromechanical system-based non-Volatile Memory device.
Nature communications, 2011Co-Authors: Sangwook Lee, Seung Joo Park, Eleanor E. B. Campbell, Yung Woo ParkAbstract:Several new generation Memory devices have been developed to overcome the low performance of conventional silicon-based flash Memory. In this study, we demonstrate a novel non-Volatile Memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash Memory and the power consumption is lower than other Memory devices.
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A fast and low-power microelectromechanical system-based non-Volatile Memory device
Nature Communications, 2011Co-Authors: Seung Joo Park, Eleanor E. B. Campbell, Yung Woo ParkAbstract:Several new generation Memory devices have been developed to overcome the low performance of conventional silicon-based flash Memory. In this study, we demonstrate a novel non-Volatile Memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash Memory and the power consumption is lower than other Memory devices. New Memory devices are being developed to overcome the limitations of conventional silicon-based flash Memory. Here, a non-Volatile Memory design is reported that uses a micromechanical cantilever to charge and discharge a floating gate, which controls charge transport through a carbon nanotube field-effect transistor.
Eleanor E. B. Campbell - One of the best experts on this subject based on the ideXlab platform.
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A fast and low-power microelectromechanical system-based non-Volatile Memory device.
Nature communications, 2011Co-Authors: Sangwook Lee, Seung Joo Park, Eleanor E. B. Campbell, Yung Woo ParkAbstract:Several new generation Memory devices have been developed to overcome the low performance of conventional silicon-based flash Memory. In this study, we demonstrate a novel non-Volatile Memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash Memory and the power consumption is lower than other Memory devices.
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A fast and low-power microelectromechanical system-based non-Volatile Memory device
Nature Communications, 2011Co-Authors: Seung Joo Park, Eleanor E. B. Campbell, Yung Woo ParkAbstract:Several new generation Memory devices have been developed to overcome the low performance of conventional silicon-based flash Memory. In this study, we demonstrate a novel non-Volatile Memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash Memory and the power consumption is lower than other Memory devices. New Memory devices are being developed to overcome the limitations of conventional silicon-based flash Memory. Here, a non-Volatile Memory design is reported that uses a micromechanical cantilever to charge and discharge a floating gate, which controls charge transport through a carbon nanotube field-effect transistor.
Sangwook Lee - One of the best experts on this subject based on the ideXlab platform.
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A fast and low-power microelectromechanical system-based non-Volatile Memory device.
Nature communications, 2011Co-Authors: Sangwook Lee, Seung Joo Park, Eleanor E. B. Campbell, Yung Woo ParkAbstract:Several new generation Memory devices have been developed to overcome the low performance of conventional silicon-based flash Memory. In this study, we demonstrate a novel non-Volatile Memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash Memory and the power consumption is lower than other Memory devices.
Henry M Levy - One of the best experts on this subject based on the ideXlab platform.
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operating system implications of fast cheap non Volatile Memory
Workshop on Hot Topics in Operating Systems, 2011Co-Authors: Katelin Bailey, Luis Ceze, Steven D Gribble, Henry M LevyAbstract:The existence of two basic levels of storage (fast/Volatile and slow/non-Volatile) has been a long-standing premise of most computer systems, influencing the design of OS components, including file systems, virtual Memory, scheduling, execution models, and even their APIs. Emerging resistive Memory technologies - such as phase-change Memory (PCM) and memristors - have the potential to provide large, fast, non-Volatile Memory systems, changing the assumptions that motivated the design of current operating systems. This paper examines the implications of non-Volatile memories on a number of OS mechanisms, functions, and properties.
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HotOS - Operating system implications of fast, cheap, non-Volatile Memory
2011Co-Authors: Katelin Bailey, Luis Ceze, Steven D Gribble, Henry M LevyAbstract:The existence of two basic levels of storage (fast/Volatile and slow/non-Volatile) has been a long-standing premise of most computer systems, influencing the design of OS components, including file systems, virtual Memory, scheduling, execution models, and even their APIs. Emerging resistive Memory technologies - such as phase-change Memory (PCM) and memristors - have the potential to provide large, fast, non-Volatile Memory systems, changing the assumptions that motivated the design of current operating systems. This paper examines the implications of non-Volatile memories on a number of OS mechanisms, functions, and properties.
