The Experts below are selected from a list of 53010 Experts worldwide ranked by ideXlab platform
Shigeo Itoh - One of the best experts on this subject based on the ideXlab platform.
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640 480 pixel active matrix spindt type field emitter array image Sensor with high gain avalanche rushing amorphous photoconductor target
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2010Co-Authors: Masakazu Nanba, Norifumi Egami, Y Takiguchi, Toshihisa Watabe, Yuki Honda, Yoshiyuki Hirano, K Miya, K Nakamura, M Taniguchi, Shigeo ItohAbstract:A 640×480 pixel field emitter array (FEA) image Sensor with a high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated and tested as a step toward the development of ultrahigh-sensitivity compact image Sensors for high-definition television cameras. For this Sensor, an active-matrix Spindt-type FEA integrated with scanning circuits and a magnetic electron focusing system were designed, and a 15-μm-thick-HARP target was used. The experimental results revealed that the Prototype Sensor had enough resolution for its pixel number and high sensitivity due to the electrons emitted from the active-matrix FEA being focused onto the HARP target.
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50 50μm pixel magnetic focus field emitter array image Sensor with high gain avalanche rushing amorphous photoconductor target
Journal of Vacuum Science & Technology B, 2005Co-Authors: Norifumi Egami, Masakazu Nanba, Y Takiguchi, Kazunori Miyakawa, Toshihisa Watabe, Saburo Okazaki, K Osada, Y Obara, Mitsuru Tanaka, Shigeo ItohAbstract:A 50×50μm pixel field emitter array image Sensor with a highly sensitive avalanche-mode photoconductive target and a scanning electron focusing system consisting of permanent magnets were fabricated and tested as a step toward the development of ultrahigh-sensitivity compact image Sensors for high-definition television cameras. The experimental results revealed that the magnetic focusing conditions of the Prototype Sensor were in accordance with those estimated from the simulation, and the Prototype Sensor could obtain both enough resolution for its pixel size and high sensitivity by focusing the electrons emitted from the field emitter array onto the highly sensitive photoconductive target.
Gunhee Han - One of the best experts on this subject based on the ideXlab platform.
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a 240 frames s 2 1 mpixel cmos image Sensor with column shared cyclic adcs
IEEE Journal of Solid-state Circuits, 2011Co-Authors: Seunghyun Lim, Jimin Cheon, Youngcheol Chae, Wunki Jung, Donghun Lee, Minho Kwon, Kwisung Yoo, Seogheon Ham, Gunhee HanAbstract:This paper proposes a low-power 240 frames/s 2.1 M-pixel CMOS image Sensor with column-shared cyclic (CY) ADCs. Two-column shared CY-ADC architecture and two-level stacked ADC placement are employed for low-power and small pixel pitch design. The proposed CY-ADC uses only one OTA and four capacitors. Distributed clocking scheme using cascaded repeaters is proposed to reduce the required peak current. The Prototype Sensor was fabricated in a 0.13- μm 1P4M process with pixel pitch of 2.25 μm . The designed 10-bit ADC dissipates only 90 μW/channel with 1.5 V supply. The measured DNL and INL are +0.59/-0.83 LSB and +2.8/-3.6 LSB, respectively. The measured maximum pixel rate is 500 Mpixels/s with total power consumption of 300 mW.
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a high speed cmos image Sensor with column parallel two step single slope adcs
IEEE Transactions on Electron Devices, 2009Co-Authors: Seunghyun Lim, Jeonghwan Lee, Dong Soo Kim, Gunhee HanAbstract:This paper proposes a column-parallel two-step single-slope (SS) ADC for high-speed CMOS image Sensors. Error correction scheme to improve the linearity is proposed as well. A Prototype Sensor of 320 times 240 pixels has been fabricated with a 0.35-mum CMOS process. Measurement results demonstrate that the proposed ADC can achieve the conversion time of 4 mus , which is ten times faster than the conventional SS ADC. The proposed error correction effectively removes the dead band problem and yields DNL of +0.53/ -0.78 LSB and INL of +1.42/ -1.61 LSB. The power consumption is 36 mW from a supply voltage of 2.8 V.
Masakazu Nanba - One of the best experts on this subject based on the ideXlab platform.
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640 480 pixel active matrix spindt type field emitter array image Sensor with high gain avalanche rushing amorphous photoconductor target
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2010Co-Authors: Masakazu Nanba, Norifumi Egami, Y Takiguchi, Toshihisa Watabe, Yuki Honda, Yoshiyuki Hirano, K Miya, K Nakamura, M Taniguchi, Shigeo ItohAbstract:A 640×480 pixel field emitter array (FEA) image Sensor with a high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated and tested as a step toward the development of ultrahigh-sensitivity compact image Sensors for high-definition television cameras. For this Sensor, an active-matrix Spindt-type FEA integrated with scanning circuits and a magnetic electron focusing system were designed, and a 15-μm-thick-HARP target was used. The experimental results revealed that the Prototype Sensor had enough resolution for its pixel number and high sensitivity due to the electrons emitted from the active-matrix FEA being focused onto the HARP target.
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50 50μm pixel magnetic focus field emitter array image Sensor with high gain avalanche rushing amorphous photoconductor target
Journal of Vacuum Science & Technology B, 2005Co-Authors: Norifumi Egami, Masakazu Nanba, Y Takiguchi, Kazunori Miyakawa, Toshihisa Watabe, Saburo Okazaki, K Osada, Y Obara, Mitsuru Tanaka, Shigeo ItohAbstract:A 50×50μm pixel field emitter array image Sensor with a highly sensitive avalanche-mode photoconductive target and a scanning electron focusing system consisting of permanent magnets were fabricated and tested as a step toward the development of ultrahigh-sensitivity compact image Sensors for high-definition television cameras. The experimental results revealed that the magnetic focusing conditions of the Prototype Sensor were in accordance with those estimated from the simulation, and the Prototype Sensor could obtain both enough resolution for its pixel size and high sensitivity by focusing the electrons emitted from the field emitter array onto the highly sensitive photoconductive target.
Norifumi Egami - One of the best experts on this subject based on the ideXlab platform.
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640 480 pixel active matrix spindt type field emitter array image Sensor with high gain avalanche rushing amorphous photoconductor target
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena, 2010Co-Authors: Masakazu Nanba, Norifumi Egami, Y Takiguchi, Toshihisa Watabe, Yuki Honda, Yoshiyuki Hirano, K Miya, K Nakamura, M Taniguchi, Shigeo ItohAbstract:A 640×480 pixel field emitter array (FEA) image Sensor with a high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated and tested as a step toward the development of ultrahigh-sensitivity compact image Sensors for high-definition television cameras. For this Sensor, an active-matrix Spindt-type FEA integrated with scanning circuits and a magnetic electron focusing system were designed, and a 15-μm-thick-HARP target was used. The experimental results revealed that the Prototype Sensor had enough resolution for its pixel number and high sensitivity due to the electrons emitted from the active-matrix FEA being focused onto the HARP target.
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50 50μm pixel magnetic focus field emitter array image Sensor with high gain avalanche rushing amorphous photoconductor target
Journal of Vacuum Science & Technology B, 2005Co-Authors: Norifumi Egami, Masakazu Nanba, Y Takiguchi, Kazunori Miyakawa, Toshihisa Watabe, Saburo Okazaki, K Osada, Y Obara, Mitsuru Tanaka, Shigeo ItohAbstract:A 50×50μm pixel field emitter array image Sensor with a highly sensitive avalanche-mode photoconductive target and a scanning electron focusing system consisting of permanent magnets were fabricated and tested as a step toward the development of ultrahigh-sensitivity compact image Sensors for high-definition television cameras. The experimental results revealed that the magnetic focusing conditions of the Prototype Sensor were in accordance with those estimated from the simulation, and the Prototype Sensor could obtain both enough resolution for its pixel size and high sensitivity by focusing the electrons emitted from the field emitter array onto the highly sensitive photoconductive target.
Seunghyun Lim - One of the best experts on this subject based on the ideXlab platform.
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a 240 frames s 2 1 mpixel cmos image Sensor with column shared cyclic adcs
IEEE Journal of Solid-state Circuits, 2011Co-Authors: Seunghyun Lim, Jimin Cheon, Youngcheol Chae, Wunki Jung, Donghun Lee, Minho Kwon, Kwisung Yoo, Seogheon Ham, Gunhee HanAbstract:This paper proposes a low-power 240 frames/s 2.1 M-pixel CMOS image Sensor with column-shared cyclic (CY) ADCs. Two-column shared CY-ADC architecture and two-level stacked ADC placement are employed for low-power and small pixel pitch design. The proposed CY-ADC uses only one OTA and four capacitors. Distributed clocking scheme using cascaded repeaters is proposed to reduce the required peak current. The Prototype Sensor was fabricated in a 0.13- μm 1P4M process with pixel pitch of 2.25 μm . The designed 10-bit ADC dissipates only 90 μW/channel with 1.5 V supply. The measured DNL and INL are +0.59/-0.83 LSB and +2.8/-3.6 LSB, respectively. The measured maximum pixel rate is 500 Mpixels/s with total power consumption of 300 mW.
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a high speed cmos image Sensor with column parallel two step single slope adcs
IEEE Transactions on Electron Devices, 2009Co-Authors: Seunghyun Lim, Jeonghwan Lee, Dong Soo Kim, Gunhee HanAbstract:This paper proposes a column-parallel two-step single-slope (SS) ADC for high-speed CMOS image Sensors. Error correction scheme to improve the linearity is proposed as well. A Prototype Sensor of 320 times 240 pixels has been fabricated with a 0.35-mum CMOS process. Measurement results demonstrate that the proposed ADC can achieve the conversion time of 4 mus , which is ten times faster than the conventional SS ADC. The proposed error correction effectively removes the dead band problem and yields DNL of +0.53/ -0.78 LSB and INL of +1.42/ -1.61 LSB. The power consumption is 36 mW from a supply voltage of 2.8 V.
