The Experts below are selected from a list of 2985 Experts worldwide ranked by ideXlab platform
Lihua Chen - One of the best experts on this subject based on the ideXlab platform.
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a gallium nitride switched capacitor circuit using synchronous rectification
IEEE Transactions on Industry Applications, 2013Co-Authors: Mark J Scott, Ke Zou, Jin Wang, Chingchi Chen, Lihua ChenAbstract:The physical characteristics of gallium nitride (GaN) make it theoretically superior to silicon (Si) in such aspects as the temperature of Operation, switching speed, breakdown voltage, and efficiency. While much research has been conducted on GaN devices, the discussion of third-Quadrant Operation is limited. Furthermore, the merits of GaN transistors, particularly their fast switching speed and low on-resistance, make them suitable for switched-capacitor circuits. This paper demonstrates the ability of a GaN transistor to function as a synchronous rectifier in a switched-capacitor circuit. A 500 W GaN-based voltage doubler capable of achieving zero-current switching is presented with supporting experimental results. This circuit achieves peak efficiencies of 97.6% and 96.6% while switching at frequencies of 382 and 893 kHz, respectively.
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a gallium nitride switched capacitor circuit using synchronous rectification
Energy Conversion Congress and Exposition, 2011Co-Authors: Mark J Scott, Ke Zou, Jin Wang, Chingchi Chen, Lihua ChenAbstract:The promise of wide band-gap materials has the potential to usher in a new era of power electronics not seen since the introduction of the Silicon (Si) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT). The physical characteristics of Gallium Nitride (GaN) make it theoretically superior to Si in such aspects as temperature of Operation, switching speed, and efficiency. While much research has been conducted on the High Electron Mobility Transistor (HEMT) made of GaN and Aluminum Gallium Nitride (AlGaN), the discussion of third Quadrant Operation is sparse. Furthermore, the merits of the AlGaN/GaN HEMT, in particular its switching speed, make it suitable for switched-capacitor circuits. Thus, this paper focuses on the AlGaN/GaN HEMT's third Quadrant Operation and demonstrates this functionality in a switched capacitor circuit.
Mark J Scott - One of the best experts on this subject based on the ideXlab platform.
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a gallium nitride switched capacitor circuit using synchronous rectification
IEEE Transactions on Industry Applications, 2013Co-Authors: Mark J Scott, Ke Zou, Jin Wang, Chingchi Chen, Lihua ChenAbstract:The physical characteristics of gallium nitride (GaN) make it theoretically superior to silicon (Si) in such aspects as the temperature of Operation, switching speed, breakdown voltage, and efficiency. While much research has been conducted on GaN devices, the discussion of third-Quadrant Operation is limited. Furthermore, the merits of GaN transistors, particularly their fast switching speed and low on-resistance, make them suitable for switched-capacitor circuits. This paper demonstrates the ability of a GaN transistor to function as a synchronous rectifier in a switched-capacitor circuit. A 500 W GaN-based voltage doubler capable of achieving zero-current switching is presented with supporting experimental results. This circuit achieves peak efficiencies of 97.6% and 96.6% while switching at frequencies of 382 and 893 kHz, respectively.
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a gallium nitride switched capacitor circuit using synchronous rectification
Energy Conversion Congress and Exposition, 2011Co-Authors: Mark J Scott, Ke Zou, Jin Wang, Chingchi Chen, Lihua ChenAbstract:The promise of wide band-gap materials has the potential to usher in a new era of power electronics not seen since the introduction of the Silicon (Si) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT). The physical characteristics of Gallium Nitride (GaN) make it theoretically superior to Si in such aspects as temperature of Operation, switching speed, and efficiency. While much research has been conducted on the High Electron Mobility Transistor (HEMT) made of GaN and Aluminum Gallium Nitride (AlGaN), the discussion of third Quadrant Operation is sparse. Furthermore, the merits of the AlGaN/GaN HEMT, in particular its switching speed, make it suitable for switched-capacitor circuits. Thus, this paper focuses on the AlGaN/GaN HEMT's third Quadrant Operation and demonstrates this functionality in a switched capacitor circuit.
Chingchi Chen - One of the best experts on this subject based on the ideXlab platform.
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a gallium nitride switched capacitor circuit using synchronous rectification
IEEE Transactions on Industry Applications, 2013Co-Authors: Mark J Scott, Ke Zou, Jin Wang, Chingchi Chen, Lihua ChenAbstract:The physical characteristics of gallium nitride (GaN) make it theoretically superior to silicon (Si) in such aspects as the temperature of Operation, switching speed, breakdown voltage, and efficiency. While much research has been conducted on GaN devices, the discussion of third-Quadrant Operation is limited. Furthermore, the merits of GaN transistors, particularly their fast switching speed and low on-resistance, make them suitable for switched-capacitor circuits. This paper demonstrates the ability of a GaN transistor to function as a synchronous rectifier in a switched-capacitor circuit. A 500 W GaN-based voltage doubler capable of achieving zero-current switching is presented with supporting experimental results. This circuit achieves peak efficiencies of 97.6% and 96.6% while switching at frequencies of 382 and 893 kHz, respectively.
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a gallium nitride switched capacitor circuit using synchronous rectification
Energy Conversion Congress and Exposition, 2011Co-Authors: Mark J Scott, Ke Zou, Jin Wang, Chingchi Chen, Lihua ChenAbstract:The promise of wide band-gap materials has the potential to usher in a new era of power electronics not seen since the introduction of the Silicon (Si) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT). The physical characteristics of Gallium Nitride (GaN) make it theoretically superior to Si in such aspects as temperature of Operation, switching speed, and efficiency. While much research has been conducted on the High Electron Mobility Transistor (HEMT) made of GaN and Aluminum Gallium Nitride (AlGaN), the discussion of third Quadrant Operation is sparse. Furthermore, the merits of the AlGaN/GaN HEMT, in particular its switching speed, make it suitable for switched-capacitor circuits. Thus, this paper focuses on the AlGaN/GaN HEMT's third Quadrant Operation and demonstrates this functionality in a switched capacitor circuit.
Ke Zou - One of the best experts on this subject based on the ideXlab platform.
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a gallium nitride switched capacitor circuit using synchronous rectification
IEEE Transactions on Industry Applications, 2013Co-Authors: Mark J Scott, Ke Zou, Jin Wang, Chingchi Chen, Lihua ChenAbstract:The physical characteristics of gallium nitride (GaN) make it theoretically superior to silicon (Si) in such aspects as the temperature of Operation, switching speed, breakdown voltage, and efficiency. While much research has been conducted on GaN devices, the discussion of third-Quadrant Operation is limited. Furthermore, the merits of GaN transistors, particularly their fast switching speed and low on-resistance, make them suitable for switched-capacitor circuits. This paper demonstrates the ability of a GaN transistor to function as a synchronous rectifier in a switched-capacitor circuit. A 500 W GaN-based voltage doubler capable of achieving zero-current switching is presented with supporting experimental results. This circuit achieves peak efficiencies of 97.6% and 96.6% while switching at frequencies of 382 and 893 kHz, respectively.
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a gallium nitride switched capacitor circuit using synchronous rectification
Energy Conversion Congress and Exposition, 2011Co-Authors: Mark J Scott, Ke Zou, Jin Wang, Chingchi Chen, Lihua ChenAbstract:The promise of wide band-gap materials has the potential to usher in a new era of power electronics not seen since the introduction of the Silicon (Si) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT). The physical characteristics of Gallium Nitride (GaN) make it theoretically superior to Si in such aspects as temperature of Operation, switching speed, and efficiency. While much research has been conducted on the High Electron Mobility Transistor (HEMT) made of GaN and Aluminum Gallium Nitride (AlGaN), the discussion of third Quadrant Operation is sparse. Furthermore, the merits of the AlGaN/GaN HEMT, in particular its switching speed, make it suitable for switched-capacitor circuits. Thus, this paper focuses on the AlGaN/GaN HEMT's third Quadrant Operation and demonstrates this functionality in a switched capacitor circuit.
Jin Wang - One of the best experts on this subject based on the ideXlab platform.
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a gallium nitride switched capacitor circuit using synchronous rectification
IEEE Transactions on Industry Applications, 2013Co-Authors: Mark J Scott, Ke Zou, Jin Wang, Chingchi Chen, Lihua ChenAbstract:The physical characteristics of gallium nitride (GaN) make it theoretically superior to silicon (Si) in such aspects as the temperature of Operation, switching speed, breakdown voltage, and efficiency. While much research has been conducted on GaN devices, the discussion of third-Quadrant Operation is limited. Furthermore, the merits of GaN transistors, particularly their fast switching speed and low on-resistance, make them suitable for switched-capacitor circuits. This paper demonstrates the ability of a GaN transistor to function as a synchronous rectifier in a switched-capacitor circuit. A 500 W GaN-based voltage doubler capable of achieving zero-current switching is presented with supporting experimental results. This circuit achieves peak efficiencies of 97.6% and 96.6% while switching at frequencies of 382 and 893 kHz, respectively.
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a gallium nitride switched capacitor circuit using synchronous rectification
Energy Conversion Congress and Exposition, 2011Co-Authors: Mark J Scott, Ke Zou, Jin Wang, Chingchi Chen, Lihua ChenAbstract:The promise of wide band-gap materials has the potential to usher in a new era of power electronics not seen since the introduction of the Silicon (Si) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT). The physical characteristics of Gallium Nitride (GaN) make it theoretically superior to Si in such aspects as temperature of Operation, switching speed, and efficiency. While much research has been conducted on the High Electron Mobility Transistor (HEMT) made of GaN and Aluminum Gallium Nitride (AlGaN), the discussion of third Quadrant Operation is sparse. Furthermore, the merits of the AlGaN/GaN HEMT, in particular its switching speed, make it suitable for switched-capacitor circuits. Thus, this paper focuses on the AlGaN/GaN HEMT's third Quadrant Operation and demonstrates this functionality in a switched capacitor circuit.
