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Motoichi Ohtsu - One of the best experts on this subject based on the ideXlab platform.
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Quantum Confinement Effect in ZnO/Mg0.2Zn0.8O multishell nanorod heterostructures
Applied Physics Letters, 2006Co-Authors: Eue-soon Jang, Jun Young Bae, Jinkyoung Yoo, Won Il Park, Dong-wook Kim, Takashi Yatsui, Motoichi OhtsuAbstract:We report on photoluminescence measurements of Mg0.2Zn0.8O∕ZnO∕Mg0.2Zn0.8O multishell layers on ZnO core nanorods. Dominant excitonic emissions in the photoluminescence spectra show a blueshift depending on the ZnO shell layer thickness attributed to the Quantum Confinement Effect in the nanorod heterostructure radial direction. Furthermore, near-field scanning optical microscopy clearly shows sharp photoluminescence peaks from the individual nanorod Quantum structures, corresponding to subband levels.
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Quantum Confinement Effect in zno mg0 2zn0 8o multishell nanorod heterostructures
Applied Physics Letters, 2006Co-Authors: Eue-soon Jang, Jun Young Bae, Jinkyoung Yoo, Won Il Park, Dong-wook Kim, Takashi Yatsui, Motoichi OhtsuAbstract:We report on photoluminescence measurements of Mg0.2Zn0.8O∕ZnO∕Mg0.2Zn0.8O multishell layers on ZnO core nanorods. Dominant excitonic emissions in the photoluminescence spectra show a blueshift depending on the ZnO shell layer thickness attributed to the Quantum Confinement Effect in the nanorod heterostructure radial direction. Furthermore, near-field scanning optical microscopy clearly shows sharp photoluminescence peaks from the individual nanorod Quantum structures, corresponding to subband levels.
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Evaluating the Quantum Confinement Effect of isolated ZnO nanorod single-Quantum-well structures using near-field ultraviolet photoluminescence spectroscopy
Optical Review, 2006Co-Authors: Takashi Yatsui, Motoichi Ohtsu, Tadashi Kawazoe, Jinkyoung YooAbstract:Using low-temperature near-field spectroscopy of isolated ZnO nanorod single-Quantum-well structures (SQWs), the dependence of the Quantum Confinement Effect of the photoluminescence peak on the well width was observed. Furthermore, the homogeneous linewidth of the isolated ZnO SQWs was determined as small as 3 meV.
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Evaluating the Quantum Confinement Effect of isolated ZnO nanorod single-Quantum-well structures using near-field ultraviolet photoluminescence spectroscopy
(CLEO). Conference on Lasers and Electro-Optics 2005., 2005Co-Authors: Takashi Yatsui, Motoichi Ohtsu, J. Lim, Tadashi Kawazoe, Jinkyoung YooAbstract:Using low-temperature near-field spectroscopy of ZnO nanorod single-Quantum-well structures, the dependence of the Quantum Confinement Effect of the photoluminescence peak on the well width was observed and the homogeneous linewidth was determined as 3 meV.
Jinkyoung Yoo - One of the best experts on this subject based on the ideXlab platform.
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Quantum Confinement Effect in ZnO/Mg0.2Zn0.8O multishell nanorod heterostructures
Applied Physics Letters, 2006Co-Authors: Eue-soon Jang, Jun Young Bae, Jinkyoung Yoo, Won Il Park, Dong-wook Kim, Takashi Yatsui, Motoichi OhtsuAbstract:We report on photoluminescence measurements of Mg0.2Zn0.8O∕ZnO∕Mg0.2Zn0.8O multishell layers on ZnO core nanorods. Dominant excitonic emissions in the photoluminescence spectra show a blueshift depending on the ZnO shell layer thickness attributed to the Quantum Confinement Effect in the nanorod heterostructure radial direction. Furthermore, near-field scanning optical microscopy clearly shows sharp photoluminescence peaks from the individual nanorod Quantum structures, corresponding to subband levels.
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Quantum Confinement Effect in zno mg0 2zn0 8o multishell nanorod heterostructures
Applied Physics Letters, 2006Co-Authors: Eue-soon Jang, Jun Young Bae, Jinkyoung Yoo, Won Il Park, Dong-wook Kim, Takashi Yatsui, Motoichi OhtsuAbstract:We report on photoluminescence measurements of Mg0.2Zn0.8O∕ZnO∕Mg0.2Zn0.8O multishell layers on ZnO core nanorods. Dominant excitonic emissions in the photoluminescence spectra show a blueshift depending on the ZnO shell layer thickness attributed to the Quantum Confinement Effect in the nanorod heterostructure radial direction. Furthermore, near-field scanning optical microscopy clearly shows sharp photoluminescence peaks from the individual nanorod Quantum structures, corresponding to subband levels.
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Evaluating the Quantum Confinement Effect of isolated ZnO nanorod single-Quantum-well structures using near-field ultraviolet photoluminescence spectroscopy
Optical Review, 2006Co-Authors: Takashi Yatsui, Motoichi Ohtsu, Tadashi Kawazoe, Jinkyoung YooAbstract:Using low-temperature near-field spectroscopy of isolated ZnO nanorod single-Quantum-well structures (SQWs), the dependence of the Quantum Confinement Effect of the photoluminescence peak on the well width was observed. Furthermore, the homogeneous linewidth of the isolated ZnO SQWs was determined as small as 3 meV.
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Evaluating the Quantum Confinement Effect of isolated ZnO nanorod single-Quantum-well structures using near-field ultraviolet photoluminescence spectroscopy
(CLEO). Conference on Lasers and Electro-Optics 2005., 2005Co-Authors: Takashi Yatsui, Motoichi Ohtsu, J. Lim, Tadashi Kawazoe, Jinkyoung YooAbstract:Using low-temperature near-field spectroscopy of ZnO nanorod single-Quantum-well structures, the dependence of the Quantum Confinement Effect of the photoluminescence peak on the well width was observed and the homogeneous linewidth was determined as 3 meV.
Takashi Yatsui - One of the best experts on this subject based on the ideXlab platform.
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Quantum Confinement Effect in ZnO/Mg0.2Zn0.8O multishell nanorod heterostructures
Applied Physics Letters, 2006Co-Authors: Eue-soon Jang, Jun Young Bae, Jinkyoung Yoo, Won Il Park, Dong-wook Kim, Takashi Yatsui, Motoichi OhtsuAbstract:We report on photoluminescence measurements of Mg0.2Zn0.8O∕ZnO∕Mg0.2Zn0.8O multishell layers on ZnO core nanorods. Dominant excitonic emissions in the photoluminescence spectra show a blueshift depending on the ZnO shell layer thickness attributed to the Quantum Confinement Effect in the nanorod heterostructure radial direction. Furthermore, near-field scanning optical microscopy clearly shows sharp photoluminescence peaks from the individual nanorod Quantum structures, corresponding to subband levels.
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Quantum Confinement Effect in zno mg0 2zn0 8o multishell nanorod heterostructures
Applied Physics Letters, 2006Co-Authors: Eue-soon Jang, Jun Young Bae, Jinkyoung Yoo, Won Il Park, Dong-wook Kim, Takashi Yatsui, Motoichi OhtsuAbstract:We report on photoluminescence measurements of Mg0.2Zn0.8O∕ZnO∕Mg0.2Zn0.8O multishell layers on ZnO core nanorods. Dominant excitonic emissions in the photoluminescence spectra show a blueshift depending on the ZnO shell layer thickness attributed to the Quantum Confinement Effect in the nanorod heterostructure radial direction. Furthermore, near-field scanning optical microscopy clearly shows sharp photoluminescence peaks from the individual nanorod Quantum structures, corresponding to subband levels.
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Evaluating the Quantum Confinement Effect of isolated ZnO nanorod single-Quantum-well structures using near-field ultraviolet photoluminescence spectroscopy
Optical Review, 2006Co-Authors: Takashi Yatsui, Motoichi Ohtsu, Tadashi Kawazoe, Jinkyoung YooAbstract:Using low-temperature near-field spectroscopy of isolated ZnO nanorod single-Quantum-well structures (SQWs), the dependence of the Quantum Confinement Effect of the photoluminescence peak on the well width was observed. Furthermore, the homogeneous linewidth of the isolated ZnO SQWs was determined as small as 3 meV.
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Evaluating the Quantum Confinement Effect of isolated ZnO nanorod single-Quantum-well structures using near-field ultraviolet photoluminescence spectroscopy
(CLEO). Conference on Lasers and Electro-Optics 2005., 2005Co-Authors: Takashi Yatsui, Motoichi Ohtsu, J. Lim, Tadashi Kawazoe, Jinkyoung YooAbstract:Using low-temperature near-field spectroscopy of ZnO nanorod single-Quantum-well structures, the dependence of the Quantum Confinement Effect of the photoluminescence peak on the well width was observed and the homogeneous linewidth was determined as 3 meV.
Masakazu Ichikawa - One of the best experts on this subject based on the ideXlab platform.
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Quantum-Confinement Effect in individual Ge1- xSnx Quantum dots on Si(111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy
Applied Physics Letters, 2007Co-Authors: Yoshiaki Nakamura, Akiko Masada, Masakazu IchikawaAbstract:The authors observed a Quantum-Confinement Effect in individual Ge1−xSnx Quantum dots (QDs) on Si (111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy at room temperature. The Quantum-Confinement Effect was featured by an increase in the energy band gap of ∼1.5eV with a decrease in QD diameter from 35to4nm. The peaks for Quantum levels of QDs became broader with a decrease in the height-diameter aspect ratio of QDs, demonstrating the gradual emergence of two dimensionality in density of states of quasi zero-dimensional QDs with the QD flattening.
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Observation of the Quantum-Confinement Effect in individual β-FeSi2 nanoislands epitaxially grown on Si (111) surfaces using scanning tunneling spectroscopy
Applied Physics Letters, 2006Co-Authors: Yoshiaki Nakamura, Ryota Suzuki, Masafumi Umeno, Sung-pyo Cho, Nobuo Tanaka, Masakazu IchikawaAbstract:The Quantum-Confinement Effect in two-dimensional β-FeSi2 nanoislands epitaxially grown on Si (111) by codeposition of Fe and Si was observed using scanning tunneling spectroscopy at room temperature. The energy band gaps of the H-terminated β-FeSi2 nanoislands increased by approximately 0.4eV when island height decreased from 5to2nm. This size dependence was explained by the Quantum-Confinement Effect in β-FeSi2 nanoislands.
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Observation of the Quantum-Confinement Effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy
Applied Physics Letters, 2005Co-Authors: Yoshiaki Nakamura, Kentaro Watanabe, Yo Fukuzawa, Masakazu IchikawaAbstract:Scanning tunneling spectroscopic studies revealed the Quantum-Confinement Effects in Ge nanocrystals formed with ultrahigh density (>1012cm−2) by Ge deposition on ultrathin Si oxide films. With decreasing crystal size, the conduction band maximum upshifted and the valence band minimum downshifted. The energy shift in both cases was about 0.7 eV with the size change from 7 to 2 nm. This shows that the energy band gaps of Ge nanocrystals increased to ∼1.4eV with decreasing size. This size dependence can be explained by the Quantum-Confinement Effect in Ge nanocrystals.
Feng Pan - One of the best experts on this subject based on the ideXlab platform.
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Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility
The Journal of Physical Chemistry C, 2016Co-Authors: Chao Xin, Jiaxin Zheng, Bingkai Zhang, Yancong Feng, Feng PanAbstract:As a compound analogue of black phosphorus, a new 2D semiconductor of SnS layers is proposed. Based on state-of-the-art theoretical calculations, we confirm that such 2D SnS layers are thermally and dynamically stable and can be mechanically exoliated from α-phase SnS bulk materials. The 2D SnS layer has an indirect band gap that can be tuned from 1.96 eV for the monolayer to 1.44 eV for a six-layer structure. Interestingly, the decrease of the band gap with increasing number of layers is not monotonic but shows an odd–even Quantum Confinement Effect, because the interplay of spin–orbit coupling and lack of inversion symmetry in odd-numbered layer structures results in anisotropic spin splitting of the energy bands. It was also found that such 2D SnS layers show high in-plane anisotropy and high carrier mobility (tens of thousands of cm2 V–1 s–1) even superior to that of black phosphorus, which is dominated by electrons. With these intriguing electronic properties, such 2D SnS layers are expected to have ...
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few layer tin sulfide a new black phosphorus analogue 2d material with a sizeable band gap odd even Quantum Confinement Effect and high carrier mobility
Journal of Physical Chemistry C, 2016Co-Authors: Chao Xin, Jiaxin Zheng, Bingkai Zhang, Yancong Feng, Feng PanAbstract:As a compound analogue of black phosphorus, a new 2D semiconductor of SnS layers is proposed. Based on state-of-the-art theoretical calculations, we confirm that such 2D SnS layers are thermally and dynamically stable and can be mechanically exoliated from α-phase SnS bulk materials. The 2D SnS layer has an indirect band gap that can be tuned from 1.96 eV for the monolayer to 1.44 eV for a six-layer structure. Interestingly, the decrease of the band gap with increasing number of layers is not monotonic but shows an odd–even Quantum Confinement Effect, because the interplay of spin–orbit coupling and lack of inversion symmetry in odd-numbered layer structures results in anisotropic spin splitting of the energy bands. It was also found that such 2D SnS layers show high in-plane anisotropy and high carrier mobility (tens of thousands of cm2 V–1 s–1) even superior to that of black phosphorus, which is dominated by electrons. With these intriguing electronic properties, such 2D SnS layers are expected to have ...
