The Experts below are selected from a list of 312 Experts worldwide ranked by ideXlab platform
Stefan W. Glunz - One of the best experts on this subject based on the ideXlab platform.
-
TEMPERATURE-DEPENDENT Quasi-Steady-State PHOTOLUMINESCENCE LIFETIME MEASUREMENTS FOR DEFECT SPECTROSCOPY
2008Co-Authors: Stefan W. Glunz, Wilhelm Warta, Thomas Roth, Marc RüdigerAbstract:Temperature and injection-dependent lifetime measurements of the effective excess carrier lifetime of crystalline silicon enable the determination of characteristic defect parameters like the energetic defect level and the ratio of the capture cross sections of electrons and holes. Since the effect of temperature-dependent photon reabsorption on Quasi-Steady-State photoluminescence lifetime measurements can be accounted for, this method is well suited to provide data for the spectroscopic analysis of defects in crystalline silicon. In contradiction to other techniques to determine the injection-dependent lifetime like photoconductance measurements, Quasi-Steady-State photoluminescence stands out for the robustness against parasitic artifacts like depletion region modulation and trapping, which makes it an ideal tool for the purposes of defect spectroscopy. In this work the capability and reproducibility of the determination of defect parameters of titanium contaminated crystalline silicon samples with different doping and defect concentrations will be shown and results will be presented.
-
influence of photon reabsorption on temperature dependent Quasi Steady State photoluminescence lifetime measurements on crystalline silicon
Applied Physics Letters, 2008Co-Authors: Marc Rüdiger, Thomas Roth, Thorsten Trupke, Peter Wurfel, Stefan W. GlunzAbstract:Due to their robustness against various experimental artifacts and the high sensitivity at low minority carrier concentrations, Quasi-Steady-State photoluminescence lifetime measurements are well suited to provide the experimental data required for advanced defect spectroscopy methods. However, for a correct evaluation, photon reabsorption has to be considered. In this work it is evaluated quantitatively, to what extent and in which temperature range photon reabsorption in silicon wafers is significant. A method to correct the effect of photon reabsorption within silicon wafers on temperature dependent Quasi-Steady-State photoluminescence lifetime measurements is presented.
Marc Rüdiger - One of the best experts on this subject based on the ideXlab platform.
-
TEMPERATURE-DEPENDENT Quasi-Steady-State PHOTOLUMINESCENCE LIFETIME MEASUREMENTS FOR DEFECT SPECTROSCOPY
2008Co-Authors: Stefan W. Glunz, Wilhelm Warta, Thomas Roth, Marc RüdigerAbstract:Temperature and injection-dependent lifetime measurements of the effective excess carrier lifetime of crystalline silicon enable the determination of characteristic defect parameters like the energetic defect level and the ratio of the capture cross sections of electrons and holes. Since the effect of temperature-dependent photon reabsorption on Quasi-Steady-State photoluminescence lifetime measurements can be accounted for, this method is well suited to provide data for the spectroscopic analysis of defects in crystalline silicon. In contradiction to other techniques to determine the injection-dependent lifetime like photoconductance measurements, Quasi-Steady-State photoluminescence stands out for the robustness against parasitic artifacts like depletion region modulation and trapping, which makes it an ideal tool for the purposes of defect spectroscopy. In this work the capability and reproducibility of the determination of defect parameters of titanium contaminated crystalline silicon samples with different doping and defect concentrations will be shown and results will be presented.
-
influence of photon reabsorption on temperature dependent Quasi Steady State photoluminescence lifetime measurements on crystalline silicon
Applied Physics Letters, 2008Co-Authors: Marc Rüdiger, Thomas Roth, Thorsten Trupke, Peter Wurfel, Stefan W. GlunzAbstract:Due to their robustness against various experimental artifacts and the high sensitivity at low minority carrier concentrations, Quasi-Steady-State photoluminescence lifetime measurements are well suited to provide the experimental data required for advanced defect spectroscopy methods. However, for a correct evaluation, photon reabsorption has to be considered. In this work it is evaluated quantitatively, to what extent and in which temperature range photon reabsorption in silicon wafers is significant. A method to correct the effect of photon reabsorption within silicon wafers on temperature dependent Quasi-Steady-State photoluminescence lifetime measurements is presented.
Tomás Alarcón - One of the best experts on this subject based on the ideXlab platform.
-
Stochastic Quasi-Steady State approximations for asymptotic solutions of the chemical master equation.
Journal of Chemical Physics, 2014Co-Authors: Tomás AlarcónAbstract:In this paper, we propose two methods to carry out the Quasi-Steady State approximation in stochastic models of enzyme catalytic regulation, based on WKB asymptotics of the chemical master equation or of the corresponding partial differential equation for the generating function. The first of the methods we propose involves the development of multiscale generalisation of a WKB approximation of the solution of the master equation, where the separation of time scales is made explicit which allows us to apply the Quasi-Steady State approximation in a straightforward manner. To the lowest order, the multi-scale WKB method provides a Quasi-Steady State, Gaussian approximation of the probability distribution. The second method is based on the Hamilton-Jacobi representation of the stochastic process where, as predicted by large deviation theory, the solution of the partial differential equation for the corresponding characteristic function is given in terms of an effective action functional. The optimal transiti...
-
Stochastic Quasi-Steady State approximations for asymptotic solutions of the chemical master equation.
The Journal of chemical physics, 2014Co-Authors: Tomás AlarcónAbstract:In this paper, we propose two methods to carry out the Quasi-Steady State approximation in stochastic models of enzyme catalytic regulation, based on WKB asymptotics of the chemical master equation or of the corresponding partial differential equation for the generating function. The first of the methods we propose involves the development of multiscale generalisation of a WKB approximation of the solution of the master equation, where the separation of time scales is made explicit which allows us to apply the Quasi-Steady State approximation in a straightforward manner. To the lowest order, the multi-scale WKB method provides a Quasi-Steady State, Gaussian approximation of the probability distribution. The second method is based on the Hamilton-Jacobi representation of the stochastic process where, as predicted by large deviation theory, the solution of the partial differential equation for the corresponding characteristic function is given in terms of an effective action functional. The optimal transition paths between two States are then given by those paths that maximise the effective action. Such paths are the solutions of the Hamilton equations for the Hamiltonian associated to the effective action functional. The Quasi-Steady State approximation is applied to the Hamilton equations thus providing an approximation to the optimal transition paths and the transition time between two States. Using this approximation we predict that, unlike the mean-field Quasi-Steady approximation result, the rate of enzyme catalysis depends explicitly on the initial number of enzyme molecules. The accuracy and validity of our approximated results as well as that of our predictions regarding the behaviour of the stochastic enzyme catalytic models are verified by direct simulation of the stochastic model using Gillespie stochastic simulation algorithm.
Wilhelm Warta - One of the best experts on this subject based on the ideXlab platform.
-
minority carrier lifetime in silicon wafers from Quasi Steady State photoluminescence
Applied Physics Letters, 2010Co-Authors: James A Giesecke, M. C. Schubert, Dominic C Walter, Wilhelm WartaAbstract:Based on Quasi-Steady-State photoluminescence, we present an approach to extract minority carrier lifetime from silicon wafers without a priori information about any material parameter (e.g., dopant concentration or mobility). A sinusoidal oscillation of irradiation of a silicon sample in time stimulates a likewise oscillating excess carrier density. Our approach is based on the fact that—in the Quasi-Steady-State regime—the time shift between the maxima of irradiation intensity and the intensity of radiative recombination is linked to effective minority carrier lifetime. Exploiting the continuity equation, it is possible to determine injection dependent minority carrier lifetime from there.
-
TEMPERATURE-DEPENDENT Quasi-Steady-State PHOTOLUMINESCENCE LIFETIME MEASUREMENTS FOR DEFECT SPECTROSCOPY
2008Co-Authors: Stefan W. Glunz, Wilhelm Warta, Thomas Roth, Marc RüdigerAbstract:Temperature and injection-dependent lifetime measurements of the effective excess carrier lifetime of crystalline silicon enable the determination of characteristic defect parameters like the energetic defect level and the ratio of the capture cross sections of electrons and holes. Since the effect of temperature-dependent photon reabsorption on Quasi-Steady-State photoluminescence lifetime measurements can be accounted for, this method is well suited to provide data for the spectroscopic analysis of defects in crystalline silicon. In contradiction to other techniques to determine the injection-dependent lifetime like photoconductance measurements, Quasi-Steady-State photoluminescence stands out for the robustness against parasitic artifacts like depletion region modulation and trapping, which makes it an ideal tool for the purposes of defect spectroscopy. In this work the capability and reproducibility of the determination of defect parameters of titanium contaminated crystalline silicon samples with different doping and defect concentrations will be shown and results will be presented.
Thomas Roth - One of the best experts on this subject based on the ideXlab platform.
-
TEMPERATURE-DEPENDENT Quasi-Steady-State PHOTOLUMINESCENCE LIFETIME MEASUREMENTS FOR DEFECT SPECTROSCOPY
2008Co-Authors: Stefan W. Glunz, Wilhelm Warta, Thomas Roth, Marc RüdigerAbstract:Temperature and injection-dependent lifetime measurements of the effective excess carrier lifetime of crystalline silicon enable the determination of characteristic defect parameters like the energetic defect level and the ratio of the capture cross sections of electrons and holes. Since the effect of temperature-dependent photon reabsorption on Quasi-Steady-State photoluminescence lifetime measurements can be accounted for, this method is well suited to provide data for the spectroscopic analysis of defects in crystalline silicon. In contradiction to other techniques to determine the injection-dependent lifetime like photoconductance measurements, Quasi-Steady-State photoluminescence stands out for the robustness against parasitic artifacts like depletion region modulation and trapping, which makes it an ideal tool for the purposes of defect spectroscopy. In this work the capability and reproducibility of the determination of defect parameters of titanium contaminated crystalline silicon samples with different doping and defect concentrations will be shown and results will be presented.
-
influence of photon reabsorption on temperature dependent Quasi Steady State photoluminescence lifetime measurements on crystalline silicon
Applied Physics Letters, 2008Co-Authors: Marc Rüdiger, Thomas Roth, Thorsten Trupke, Peter Wurfel, Stefan W. GlunzAbstract:Due to their robustness against various experimental artifacts and the high sensitivity at low minority carrier concentrations, Quasi-Steady-State photoluminescence lifetime measurements are well suited to provide the experimental data required for advanced defect spectroscopy methods. However, for a correct evaluation, photon reabsorption has to be considered. In this work it is evaluated quantitatively, to what extent and in which temperature range photon reabsorption in silicon wafers is significant. A method to correct the effect of photon reabsorption within silicon wafers on temperature dependent Quasi-Steady-State photoluminescence lifetime measurements is presented.
