The Experts below are selected from a list of 327 Experts worldwide ranked by ideXlab platform
Xiaohua Wang - One of the best experts on this subject based on the ideXlab platform.
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mid and long infrared emission properties of inxga1 xasysb1 y Quaternary Alloy with type ii inas gasb superlattice distribution
Journal of Alloys and Compounds, 2020Co-Authors: Xuan Fang, Hongbin Zhao, Dan Fang, Dongbo Wang, Qian Gong, Xufeng Kou, Xiaolei Liu, Xiaohua WangAbstract:Abstract In this work, an InxGa1−xAsySb1−y Quaternary Alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer Alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1−xAsySb1−y Quaternary Alloys with high In contents (up to 50%–65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the Quaternary Alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (ϵxx) can be observed in the Quaternary Alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar superlattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k∙p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the Quaternary Alloy by manipulating the FMA process on the vicinal surface. The Quaternary Alloy components and vertically-distributed superlattice parameters can be regulated, and the Quaternary Alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric Quaternary Alloys with carrier emission from the unique bandgap for infrared optoelectronic devices.
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Mid- and long-infrared emission properties of InxGa1−xAsySb1−y Quaternary Alloy with Type-II InAs/GaSb superlattice distribution
Journal of Alloys and Compounds, 2020Co-Authors: Xuan Fang, Hongbin Zhao, Dan Fang, Dongbo Wang, Qian Gong, Xufeng Kou, Xiaolei Liu, Xiaohua WangAbstract:Abstract In this work, an InxGa1−xAsySb1−y Quaternary Alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer Alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1−xAsySb1−y Quaternary Alloys with high In contents (up to 50%–65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the Quaternary Alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (ϵxx) can be observed in the Quaternary Alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar superlattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k∙p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the Quaternary Alloy by manipulating the FMA process on the vicinal surface. The Quaternary Alloy components and vertically-distributed superlattice parameters can be regulated, and the Quaternary Alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric Quaternary Alloys with carrier emission from the unique bandgap for infrared optoelectronic devices.
Xuan Fang - One of the best experts on this subject based on the ideXlab platform.
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mid and long infrared emission properties of inxga1 xasysb1 y Quaternary Alloy with type ii inas gasb superlattice distribution
Journal of Alloys and Compounds, 2020Co-Authors: Xuan Fang, Hongbin Zhao, Dan Fang, Dongbo Wang, Qian Gong, Xufeng Kou, Xiaolei Liu, Xiaohua WangAbstract:Abstract In this work, an InxGa1−xAsySb1−y Quaternary Alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer Alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1−xAsySb1−y Quaternary Alloys with high In contents (up to 50%–65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the Quaternary Alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (ϵxx) can be observed in the Quaternary Alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar superlattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k∙p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the Quaternary Alloy by manipulating the FMA process on the vicinal surface. The Quaternary Alloy components and vertically-distributed superlattice parameters can be regulated, and the Quaternary Alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric Quaternary Alloys with carrier emission from the unique bandgap for infrared optoelectronic devices.
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Mid- and long-infrared emission properties of InxGa1−xAsySb1−y Quaternary Alloy with Type-II InAs/GaSb superlattice distribution
Journal of Alloys and Compounds, 2020Co-Authors: Xuan Fang, Hongbin Zhao, Dan Fang, Dongbo Wang, Qian Gong, Xufeng Kou, Xiaolei Liu, Xiaohua WangAbstract:Abstract In this work, an InxGa1−xAsySb1−y Quaternary Alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer Alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1−xAsySb1−y Quaternary Alloys with high In contents (up to 50%–65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the Quaternary Alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (ϵxx) can be observed in the Quaternary Alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar superlattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k∙p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the Quaternary Alloy by manipulating the FMA process on the vicinal surface. The Quaternary Alloy components and vertically-distributed superlattice parameters can be regulated, and the Quaternary Alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric Quaternary Alloys with carrier emission from the unique bandgap for infrared optoelectronic devices.
Dongbo Wang - One of the best experts on this subject based on the ideXlab platform.
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mid and long infrared emission properties of inxga1 xasysb1 y Quaternary Alloy with type ii inas gasb superlattice distribution
Journal of Alloys and Compounds, 2020Co-Authors: Xuan Fang, Hongbin Zhao, Dan Fang, Dongbo Wang, Qian Gong, Xufeng Kou, Xiaolei Liu, Xiaohua WangAbstract:Abstract In this work, an InxGa1−xAsySb1−y Quaternary Alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer Alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1−xAsySb1−y Quaternary Alloys with high In contents (up to 50%–65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the Quaternary Alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (ϵxx) can be observed in the Quaternary Alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar superlattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k∙p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the Quaternary Alloy by manipulating the FMA process on the vicinal surface. The Quaternary Alloy components and vertically-distributed superlattice parameters can be regulated, and the Quaternary Alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric Quaternary Alloys with carrier emission from the unique bandgap for infrared optoelectronic devices.
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Mid- and long-infrared emission properties of InxGa1−xAsySb1−y Quaternary Alloy with Type-II InAs/GaSb superlattice distribution
Journal of Alloys and Compounds, 2020Co-Authors: Xuan Fang, Hongbin Zhao, Dan Fang, Dongbo Wang, Qian Gong, Xufeng Kou, Xiaolei Liu, Xiaohua WangAbstract:Abstract In this work, an InxGa1−xAsySb1−y Quaternary Alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer Alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1−xAsySb1−y Quaternary Alloys with high In contents (up to 50%–65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the Quaternary Alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (ϵxx) can be observed in the Quaternary Alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar superlattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k∙p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the Quaternary Alloy by manipulating the FMA process on the vicinal surface. The Quaternary Alloy components and vertically-distributed superlattice parameters can be regulated, and the Quaternary Alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric Quaternary Alloys with carrier emission from the unique bandgap for infrared optoelectronic devices.
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Study of Ultraviolet Emission Enhancement in AlxInyGa1–x–yN Quaternary Alloy Film
The Journal of Physical Chemistry C, 2012Co-Authors: Dongbo Wang, Shujie Jiao, Liancheng Zhao, Tong Liu, Shiyong Gao, Jinzhong Wang, Fengyun GuoAbstract:The effect of indium cluster on enhanced ultraviolet luminescence in AlxInyGa1–x–yN Quaternary Alloys with increasing Al composition was investigated. X-ray diffraction (XRD), temperature-dependent photoluminescence (PL), transmittance spectra, and Raman scattering measurements have been employed to study the AlxInyGa1–x–yN Quaternary Alloy. Abnormal S-shaped temperature dependence of PL emissions in high Al content sample originated from carrier localization induced by indium nanoclusters, which is in good agreement with the pure InN mode measured by Raman scattering. A large Stokes shift between the emission peak and the absorption edge is also found in the high Al content sample. All these observations suggested that the enhancement of carrier localization by indium nanoclusters is responsible for the increase in radiative recombination probability with increasing Al composition. Our results demonstrated that AlxInyGa1–x–yN Quaternary Alloy can exhibit a larger band gap than that of GaN and enhanced ul...
Hongbin Zhao - One of the best experts on this subject based on the ideXlab platform.
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mid and long infrared emission properties of inxga1 xasysb1 y Quaternary Alloy with type ii inas gasb superlattice distribution
Journal of Alloys and Compounds, 2020Co-Authors: Xuan Fang, Hongbin Zhao, Dan Fang, Dongbo Wang, Qian Gong, Xufeng Kou, Xiaolei Liu, Xiaohua WangAbstract:Abstract In this work, an InxGa1−xAsySb1−y Quaternary Alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer Alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1−xAsySb1−y Quaternary Alloys with high In contents (up to 50%–65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the Quaternary Alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (ϵxx) can be observed in the Quaternary Alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar superlattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k∙p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the Quaternary Alloy by manipulating the FMA process on the vicinal surface. The Quaternary Alloy components and vertically-distributed superlattice parameters can be regulated, and the Quaternary Alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric Quaternary Alloys with carrier emission from the unique bandgap for infrared optoelectronic devices.
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Mid- and long-infrared emission properties of InxGa1−xAsySb1−y Quaternary Alloy with Type-II InAs/GaSb superlattice distribution
Journal of Alloys and Compounds, 2020Co-Authors: Xuan Fang, Hongbin Zhao, Dan Fang, Dongbo Wang, Qian Gong, Xufeng Kou, Xiaolei Liu, Xiaohua WangAbstract:Abstract In this work, an InxGa1−xAsySb1−y Quaternary Alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer Alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1−xAsySb1−y Quaternary Alloys with high In contents (up to 50%–65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the Quaternary Alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (ϵxx) can be observed in the Quaternary Alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar superlattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k∙p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the Quaternary Alloy by manipulating the FMA process on the vicinal surface. The Quaternary Alloy components and vertically-distributed superlattice parameters can be regulated, and the Quaternary Alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric Quaternary Alloys with carrier emission from the unique bandgap for infrared optoelectronic devices.
Dan Fang - One of the best experts on this subject based on the ideXlab platform.
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mid and long infrared emission properties of inxga1 xasysb1 y Quaternary Alloy with type ii inas gasb superlattice distribution
Journal of Alloys and Compounds, 2020Co-Authors: Xuan Fang, Hongbin Zhao, Dan Fang, Dongbo Wang, Qian Gong, Xufeng Kou, Xiaolei Liu, Xiaohua WangAbstract:Abstract In this work, an InxGa1−xAsySb1−y Quaternary Alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer Alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1−xAsySb1−y Quaternary Alloys with high In contents (up to 50%–65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the Quaternary Alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (ϵxx) can be observed in the Quaternary Alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar superlattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k∙p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the Quaternary Alloy by manipulating the FMA process on the vicinal surface. The Quaternary Alloy components and vertically-distributed superlattice parameters can be regulated, and the Quaternary Alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric Quaternary Alloys with carrier emission from the unique bandgap for infrared optoelectronic devices.
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Mid- and long-infrared emission properties of InxGa1−xAsySb1−y Quaternary Alloy with Type-II InAs/GaSb superlattice distribution
Journal of Alloys and Compounds, 2020Co-Authors: Xuan Fang, Hongbin Zhao, Dan Fang, Dongbo Wang, Qian Gong, Xufeng Kou, Xiaolei Liu, Xiaohua WangAbstract:Abstract In this work, an InxGa1−xAsySb1−y Quaternary Alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer Alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1−xAsySb1−y Quaternary Alloys with high In contents (up to 50%–65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the Quaternary Alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (ϵxx) can be observed in the Quaternary Alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar superlattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k∙p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the Quaternary Alloy by manipulating the FMA process on the vicinal surface. The Quaternary Alloy components and vertically-distributed superlattice parameters can be regulated, and the Quaternary Alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric Quaternary Alloys with carrier emission from the unique bandgap for infrared optoelectronic devices.
