The Experts below are selected from a list of 102 Experts worldwide ranked by ideXlab platform
Hyung-ik Lee - One of the best experts on this subject based on the ideXlab platform.
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chemically homogeneous and thermally robust ni1 xptxsi film formed under a non equilibrium melting Quenching Condition
ACS Applied Materials & Interfaces, 2017Co-Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chul Sung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-ik LeeAbstract:To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and Quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
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Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition
ACS applied materials & interfaces, 2016Co-Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chul Sung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-ik LeeAbstract:To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and Quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
Jinbum Kim - One of the best experts on this subject based on the ideXlab platform.
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chemically homogeneous and thermally robust ni1 xptxsi film formed under a non equilibrium melting Quenching Condition
ACS Applied Materials & Interfaces, 2017Co-Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chul Sung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-ik LeeAbstract:To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and Quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
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Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition
ACS applied materials & interfaces, 2016Co-Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chul Sung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-ik LeeAbstract:To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and Quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
Taejin Park - One of the best experts on this subject based on the ideXlab platform.
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chemically homogeneous and thermally robust ni1 xptxsi film formed under a non equilibrium melting Quenching Condition
ACS Applied Materials & Interfaces, 2017Co-Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chul Sung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-ik LeeAbstract:To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and Quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
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Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition
ACS applied materials & interfaces, 2016Co-Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chul Sung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-ik LeeAbstract:To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and Quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
Seongheum Choi - One of the best experts on this subject based on the ideXlab platform.
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chemically homogeneous and thermally robust ni1 xptxsi film formed under a non equilibrium melting Quenching Condition
ACS Applied Materials & Interfaces, 2017Co-Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chul Sung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-ik LeeAbstract:To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and Quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
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Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition
ACS applied materials & interfaces, 2016Co-Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chul Sung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-ik LeeAbstract:To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and Quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
Chul Sung Kim - One of the best experts on this subject based on the ideXlab platform.
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chemically homogeneous and thermally robust ni1 xptxsi film formed under a non equilibrium melting Quenching Condition
ACS Applied Materials & Interfaces, 2017Co-Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chul Sung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-ik LeeAbstract:To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and Quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
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Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition
ACS applied materials & interfaces, 2016Co-Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chul Sung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-ik LeeAbstract:To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and Quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
