The Experts below are selected from a list of 114 Experts worldwide ranked by ideXlab platform
Robert Magerle - One of the best experts on this subject based on the ideXlab platform.
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Radioactive Isotopes In Photoluminescence Experiments: Identification Of Defect Levels
MRS Proceedings, 2011Co-Authors: Robert MagerleAbstract:The characteristic life-times of Radioactive Isotopes can be used to label and identify defect levels in semiconductors which can be detected by photoluminescence (PL). This technique is illustrated with three examples: ZnS doped with Radioactive 65 Zn by neutron irradiation and GaAs doped with Radioactive 111 In by ion implantation. Finally we report that doping GaAs with Radioactive 71 As which decays to stable 71 Ga can be used to create Ga As antisites in GaAs in a controlled way and to identify their levels.
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Photoluminescence analysis of semiconductors using Radioactive Isotopes
Hyperfine Interactions, 2000Co-Authors: Martin O. Henry, Manfred Deicher, Robert Magerle, Enda Mcglynn, A. StötzlerAbstract:The combination of photoluminescence spectroscopy with the Radioactive Isotopes 7Be, 71As, 111Ag, 111In, 191Pt, 193Au and 197Hg is shown to provide definitive proof of the chemical identity of impurities producing photoluminescence spectra in all classes of semiconductors. The isotope 71As is used to show that Radioactive Isotopes can provide a powerful means of producing and studying a fundamental crystal defect such as an anti-site. Factors governing the luminescence intensities which can lead to apparently anomalous results are also discussed.
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Radioactive Isotopes in Photoluminescence Experiments: Identification of Defect Levels.
Physical Review Letters, 1995Co-Authors: Robert Magerle, Manfred Deicher, A. Burchard, T. Kerle, Walter Pfeiffer, E. RecknagelAbstract:The characteristic lifetimes of Radioactive Isotopes can be used to label and identify defect levels in semiconductors which can be detected by photoluminescence (PL). This is demonstrated in GaAs doped with Radioactive In-111. During its decay to Cd-111 all those PL peaks increase for which Cd accepters are involved. By deriving a quantitative relation between PL intensity and Cd concentration we show that this intensity increase is determined only by the nuclear lifetime of In-111. Thus we gain a complete and independent identification of the Cd related PL peaks in GaAs.
Manfred Deicher - One of the best experts on this subject based on the ideXlab platform.
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Characterization of defects in semiconductors using Radioactive Isotopes
Physica B: Condensed Matter, 2007Co-Authors: Manfred DeicherAbstract:Radioactive atoms have been used in solid-state physics and in material science for many decades. Besides their classical application as tracer for diffusion studies, nuclear techniques such as Mossbauer spectroscopy, perturbed angular correlation, and emission channeling have used nuclear properties to gain microscopical information on the structural and dynamical properties of solids. The availability of many different Radioactive Isotopes as a clean ion beam at facilities like ISOLDE/CERN has triggered a new era involving methods sensitive for the optical and electronic properties of solids, especially in the field of semiconductor physics. Spectroscopic techniques like photoluminescence (PL), deep-level transient spectroscopy (DLTS), and Hall effect gain a new quality by using Radioactive Isotopes. Due to their decay the chemical origin of an observed electronic and optical behavior of a specific defect or dopant can be unambiguously identified. This contribution will highlight a few examples to illustrate the potential of Radioactive Isotopes for solving various problems connected to defects in semiconductor physics.
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Photoluminescence analysis of semiconductors using Radioactive Isotopes
Hyperfine Interactions, 2000Co-Authors: Martin O. Henry, Manfred Deicher, Robert Magerle, Enda Mcglynn, A. StötzlerAbstract:The combination of photoluminescence spectroscopy with the Radioactive Isotopes 7Be, 71As, 111Ag, 111In, 191Pt, 193Au and 197Hg is shown to provide definitive proof of the chemical identity of impurities producing photoluminescence spectra in all classes of semiconductors. The isotope 71As is used to show that Radioactive Isotopes can provide a powerful means of producing and studying a fundamental crystal defect such as an anti-site. Factors governing the luminescence intensities which can lead to apparently anomalous results are also discussed.
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Radioactive Isotopes in Photoluminescence Experiments: Identification of Defect Levels.
Physical Review Letters, 1995Co-Authors: Robert Magerle, Manfred Deicher, A. Burchard, T. Kerle, Walter Pfeiffer, E. RecknagelAbstract:The characteristic lifetimes of Radioactive Isotopes can be used to label and identify defect levels in semiconductors which can be detected by photoluminescence (PL). This is demonstrated in GaAs doped with Radioactive In-111. During its decay to Cd-111 all those PL peaks increase for which Cd accepters are involved. By deriving a quantitative relation between PL intensity and Cd concentration we show that this intensity increase is determined only by the nuclear lifetime of In-111. Thus we gain a complete and independent identification of the Cd related PL peaks in GaAs.
E. Recknagel - One of the best experts on this subject based on the ideXlab platform.
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Radioactive Isotopes in Photoluminescence Experiments: Identification of Defect Levels.
Physical Review Letters, 1995Co-Authors: Robert Magerle, Manfred Deicher, A. Burchard, T. Kerle, Walter Pfeiffer, E. RecknagelAbstract:The characteristic lifetimes of Radioactive Isotopes can be used to label and identify defect levels in semiconductors which can be detected by photoluminescence (PL). This is demonstrated in GaAs doped with Radioactive In-111. During its decay to Cd-111 all those PL peaks increase for which Cd accepters are involved. By deriving a quantitative relation between PL intensity and Cd concentration we show that this intensity increase is determined only by the nuclear lifetime of In-111. Thus we gain a complete and independent identification of the Cd related PL peaks in GaAs.
E Nolte - One of the best experts on this subject based on the ideXlab platform.
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muon induced production of Radioactive Isotopes in scintillation detectors
Astroparticle Physics, 2000Co-Authors: T Hagner, R Von Hentig, B Heisinger, L Oberauer, S Schonert, F Von Feilitzsch, E NolteAbstract:Abstract The production of Radioactive Isotopes in scintillation detectors by muons and their secondary shower particles has been studied experimentally at the SPS muon beam at CERN. This paper shows the results obtained in cross-section measurements on liquid scintillator targets, especially on 12 C which is the most relevant target in these organic materials. Their energy dependence has been deduced from the cross-sections determined at two muon energies 100 and 190 GeV. Based on the measured cross-sections the muon-induced background rates for the forthcoming solar neutrino experiments BOREXINO and KAMLAND have been calculated for different energy regions that are relevant for solar neutrino physics.
A. Stötzler - One of the best experts on this subject based on the ideXlab platform.
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Photoluminescence analysis of semiconductors using Radioactive Isotopes
Hyperfine Interactions, 2000Co-Authors: Martin O. Henry, Manfred Deicher, Robert Magerle, Enda Mcglynn, A. StötzlerAbstract:The combination of photoluminescence spectroscopy with the Radioactive Isotopes 7Be, 71As, 111Ag, 111In, 191Pt, 193Au and 197Hg is shown to provide definitive proof of the chemical identity of impurities producing photoluminescence spectra in all classes of semiconductors. The isotope 71As is used to show that Radioactive Isotopes can provide a powerful means of producing and studying a fundamental crystal defect such as an anti-site. Factors governing the luminescence intensities which can lead to apparently anomalous results are also discussed.