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Dim-lee Kwong - One of the best experts on this subject based on the ideXlab platform.
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Dopant Enhanced Low-Temperature Epitaxial Growth by Rapid Thermal Processing Chemical Vapor Deposition
MRS Proceedings, 2011Co-Authors: T. Y. Hsieh, K. H. Jung, Dim-lee KwongAbstract:ABSTRACTWe have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using Rapid Thermal Processing chemical vapor deposition (RTPCVD). Heavily arsenic-doped epitaxial layers with very abrupt dopant transition profiles and relative uniform carrier distribution have been achieved at 800°C. The defect formation is closely related to dopant concentration; the defect density as a function of carrier concentration shows a sharp transition at about 3×1018 cm−3.
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Ge x Si 1−x Waveguides Grown by Rapid Thermal Processing Chemical Vator Deposition
MRS Proceedings, 2011Co-Authors: K. H. Jung, T. Y. Hsieh, R. A. Mayer, Joe C. Campbell, Dim-lee KwongAbstract:ABSTRACTWe report the growth and characterization of GexSi1−x films for optical waveguiding. GexSi1−x/Si waveguides were grown by Rapid Thermal Processing chemical vapor deposition. An average attenuation of 3.3 dB/cm was achieved for a 1 μm thick Ge0.04Si0.96 layer patterned into rib waveguides 2000 Å deep with widths of 5 μm. Directional couplers were also fabricated. Average coupling efficiencies of 85% were achieved for 1.5 μm interwaveguide separation.
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The Rapid Thermal Processing chemical vapor deposition of silicon epitaxial films
JOM, 1991Co-Authors: K. H. Jung, T. Y. Hsieh, Dim-lee KwongAbstract:The future of ultralarge-scale integration technology is tending toward reduced Thermal Processing to realize devices with higher integration densities and better performance. Rapid Thermal Processing chemical vapor deposition (RTPCVD) is a promising technology that can preserve the advantages of high-temperature Processing without degrading the fidelity of junction profiles. Defect free, thin silicon epilayers with extremely abrupt dopant-transition profiles can be re-producibly grown by RTPCVD. Very high quality n-type and p-type heavily doped epilayers, using boron, arsenic, and phosphorus as dopants, have been grown by RTPCVD. Through superior process control and reduced Thermal exposure, RTPCVD is expected to play an important part in the next generation of fabrication technology and in the development of novel silicon-based materials.
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Si-based epitaxial growth by Rapid Thermal Processing chemical vapor deposition
Rapid Thermal and Related Processing Techniques, 1991Co-Authors: K. H. Jung, T. Y. Hsieh, Dim-lee Kwong, D. B. SprattAbstract:Rapid Thermal Processing chemical vapor deposition (RTPCVD) has received considerable attention because of its ability to reduce many of the Processing problems associated with Thermal exposure in conventional chemical vapor deposition while still retaining the ability to grow high quality epitaxial layers. We have used RTPCVD to grow epitaxial films of undoped Si in-situ doped Si and Ge1Si1. Both bare Si substrates and Si-on-insulator (SOl) substrates were used. We have also demonstrated selective epitaxial growth (SEG) of Si using oxide masks. Our results show that RTPCVD is capable of growing high quality epitaxial layers with sharp concentration transition profiles. 1.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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Selective epitaxial growth by Rapid Thermal Processing
Applied Physics Letters, 1990Co-Authors: S. K. Lee, T. Y. Hsieh, K. H. Jung, Dim-lee KwongAbstract:Rapid Thermal Processing chemical vapor deposition was employed for selective epitaxial growth of silicon. Defect‐free epitaxial islands were grown into oxide windows with 〈110〉 sidewall orientation on (100) silicon substrates. The effects of growth temperature on the degree of faceting have been studied. The hydrogen prebake temperatures as low as 1000 °C have proven to be sufficient for high quality Si deposition without sidewall oxide undercutting.
K. H. Jung - One of the best experts on this subject based on the ideXlab platform.
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Dopant Enhanced Low-Temperature Epitaxial Growth by Rapid Thermal Processing Chemical Vapor Deposition
MRS Proceedings, 2011Co-Authors: T. Y. Hsieh, K. H. Jung, Dim-lee KwongAbstract:ABSTRACTWe have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using Rapid Thermal Processing chemical vapor deposition (RTPCVD). Heavily arsenic-doped epitaxial layers with very abrupt dopant transition profiles and relative uniform carrier distribution have been achieved at 800°C. The defect formation is closely related to dopant concentration; the defect density as a function of carrier concentration shows a sharp transition at about 3×1018 cm−3.
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Ge x Si 1−x Waveguides Grown by Rapid Thermal Processing Chemical Vator Deposition
MRS Proceedings, 2011Co-Authors: K. H. Jung, T. Y. Hsieh, R. A. Mayer, Joe C. Campbell, Dim-lee KwongAbstract:ABSTRACTWe report the growth and characterization of GexSi1−x films for optical waveguiding. GexSi1−x/Si waveguides were grown by Rapid Thermal Processing chemical vapor deposition. An average attenuation of 3.3 dB/cm was achieved for a 1 μm thick Ge0.04Si0.96 layer patterned into rib waveguides 2000 Å deep with widths of 5 μm. Directional couplers were also fabricated. Average coupling efficiencies of 85% were achieved for 1.5 μm interwaveguide separation.
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Boron‐enhanced low‐temperature Si epitaxy by Rapid Thermal Processing chemical vapor deposition
Applied Physics Letters, 1992Co-Authors: T. Y. Hsieh, K. H. Jung, D.l. Kwong, R. BrennanAbstract:We demonstrate that epitaxial growth temperatures can be lowered by in situ boron incorporation using Rapid Thermal Processing chemical vapor deposition (RTPCVD). Heavily boron‐doped epitaxial layers with very abrupt dopant transition profiles have been grown at 800 °C. Carrier concentrations as high as 5×1019 cm−3 were obtained with defect densities of the order of 102–103 cm−2. The film quality and surface morphology were closely related to dopant concentration. Higher dopant concentrations improved surface morphology.
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The Rapid Thermal Processing chemical vapor deposition of silicon epitaxial films
JOM, 1991Co-Authors: K. H. Jung, T. Y. Hsieh, Dim-lee KwongAbstract:The future of ultralarge-scale integration technology is tending toward reduced Thermal Processing to realize devices with higher integration densities and better performance. Rapid Thermal Processing chemical vapor deposition (RTPCVD) is a promising technology that can preserve the advantages of high-temperature Processing without degrading the fidelity of junction profiles. Defect free, thin silicon epilayers with extremely abrupt dopant-transition profiles can be re-producibly grown by RTPCVD. Very high quality n-type and p-type heavily doped epilayers, using boron, arsenic, and phosphorus as dopants, have been grown by RTPCVD. Through superior process control and reduced Thermal exposure, RTPCVD is expected to play an important part in the next generation of fabrication technology and in the development of novel silicon-based materials.
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Si-based epitaxial growth by Rapid Thermal Processing chemical vapor deposition
Rapid Thermal and Related Processing Techniques, 1991Co-Authors: K. H. Jung, T. Y. Hsieh, Dim-lee Kwong, D. B. SprattAbstract:Rapid Thermal Processing chemical vapor deposition (RTPCVD) has received considerable attention because of its ability to reduce many of the Processing problems associated with Thermal exposure in conventional chemical vapor deposition while still retaining the ability to grow high quality epitaxial layers. We have used RTPCVD to grow epitaxial films of undoped Si in-situ doped Si and Ge1Si1. Both bare Si substrates and Si-on-insulator (SOl) substrates were used. We have also demonstrated selective epitaxial growth (SEG) of Si using oxide masks. Our results show that RTPCVD is capable of growing high quality epitaxial layers with sharp concentration transition profiles. 1.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
T. Y. Hsieh - One of the best experts on this subject based on the ideXlab platform.
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Dopant Enhanced Low-Temperature Epitaxial Growth by Rapid Thermal Processing Chemical Vapor Deposition
MRS Proceedings, 2011Co-Authors: T. Y. Hsieh, K. H. Jung, Dim-lee KwongAbstract:ABSTRACTWe have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using Rapid Thermal Processing chemical vapor deposition (RTPCVD). Heavily arsenic-doped epitaxial layers with very abrupt dopant transition profiles and relative uniform carrier distribution have been achieved at 800°C. The defect formation is closely related to dopant concentration; the defect density as a function of carrier concentration shows a sharp transition at about 3×1018 cm−3.
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Ge x Si 1−x Waveguides Grown by Rapid Thermal Processing Chemical Vator Deposition
MRS Proceedings, 2011Co-Authors: K. H. Jung, T. Y. Hsieh, R. A. Mayer, Joe C. Campbell, Dim-lee KwongAbstract:ABSTRACTWe report the growth and characterization of GexSi1−x films for optical waveguiding. GexSi1−x/Si waveguides were grown by Rapid Thermal Processing chemical vapor deposition. An average attenuation of 3.3 dB/cm was achieved for a 1 μm thick Ge0.04Si0.96 layer patterned into rib waveguides 2000 Å deep with widths of 5 μm. Directional couplers were also fabricated. Average coupling efficiencies of 85% were achieved for 1.5 μm interwaveguide separation.
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Boron‐enhanced low‐temperature Si epitaxy by Rapid Thermal Processing chemical vapor deposition
Applied Physics Letters, 1992Co-Authors: T. Y. Hsieh, K. H. Jung, D.l. Kwong, R. BrennanAbstract:We demonstrate that epitaxial growth temperatures can be lowered by in situ boron incorporation using Rapid Thermal Processing chemical vapor deposition (RTPCVD). Heavily boron‐doped epitaxial layers with very abrupt dopant transition profiles have been grown at 800 °C. Carrier concentrations as high as 5×1019 cm−3 were obtained with defect densities of the order of 102–103 cm−2. The film quality and surface morphology were closely related to dopant concentration. Higher dopant concentrations improved surface morphology.
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The Rapid Thermal Processing chemical vapor deposition of silicon epitaxial films
JOM, 1991Co-Authors: K. H. Jung, T. Y. Hsieh, Dim-lee KwongAbstract:The future of ultralarge-scale integration technology is tending toward reduced Thermal Processing to realize devices with higher integration densities and better performance. Rapid Thermal Processing chemical vapor deposition (RTPCVD) is a promising technology that can preserve the advantages of high-temperature Processing without degrading the fidelity of junction profiles. Defect free, thin silicon epilayers with extremely abrupt dopant-transition profiles can be re-producibly grown by RTPCVD. Very high quality n-type and p-type heavily doped epilayers, using boron, arsenic, and phosphorus as dopants, have been grown by RTPCVD. Through superior process control and reduced Thermal exposure, RTPCVD is expected to play an important part in the next generation of fabrication technology and in the development of novel silicon-based materials.
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Si-based epitaxial growth by Rapid Thermal Processing chemical vapor deposition
Rapid Thermal and Related Processing Techniques, 1991Co-Authors: K. H. Jung, T. Y. Hsieh, Dim-lee Kwong, D. B. SprattAbstract:Rapid Thermal Processing chemical vapor deposition (RTPCVD) has received considerable attention because of its ability to reduce many of the Processing problems associated with Thermal exposure in conventional chemical vapor deposition while still retaining the ability to grow high quality epitaxial layers. We have used RTPCVD to grow epitaxial films of undoped Si in-situ doped Si and Ge1Si1. Both bare Si substrates and Si-on-insulator (SOl) substrates were used. We have also demonstrated selective epitaxial growth (SEG) of Si using oxide masks. Our results show that RTPCVD is capable of growing high quality epitaxial layers with sharp concentration transition profiles. 1.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Paul Siffert - One of the best experts on this subject based on the ideXlab platform.
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Towards high‐eficiency silicon solar cells by Rapid Thermal Processing
Progress in Photovoltaics, 1994Co-Authors: Bouchaib Hartiti, J.-c. Muller, R. Schindler, A. Slaoui, B. Wagner, I. Reis, A. Eyer, Paul SiffertAbstract:Rapid Thermal Processing can offer many advantages, such as small overall Thermal budget and low power and time consumption, in a strategy focused on cost-effective techniques for the preparation of solar cells in a continuous way. We show here that this very short duration (a few tens of seconds) of isoThermal heating performed in a lamp furnace can be used for many Thermal steps of silicon solar cell Processing. Rapid Thermal Processing was applied to form the p-n junction from a phosphorus-doped spin-on silica film deposted on (100) silicon substrates at typical Processing temperatures between 800 and 1100°C. the solar cells showed conversion efficiencies as good as those processed in a conventional way.
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Defect generation and gettering during Rapid Thermal Processing
IEEE Transactions on Electron Devices, 1992Co-Authors: Bouchaib Hartiti, J.-c. Muller, Paul SiffertAbstract:The authors present results showing that deep-level transient spectroscopy (DLTS) is particularly efficient in identifying the origin of Rapid Thermal Processing (RTP) related defects. It was found that defects are mostly related to residual impurities present in the as-grown silicon wafers or unintentionally introduced during high-temperature Processing steps. It was shown, in particular, that these impurities can be Thermally annealed out or neutralized by a hydrogenation process. In addition, the authors demonstrated that these impurities can be swept out of the active region of the device by a gettering effect during the RTP which is similar to that occurring in a classical Thermal treatment.
Robert Mertens - One of the best experts on this subject based on the ideXlab platform.
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fabrication of large area silicon solar cells by Rapid Thermal Processing
Applied Physics Letters, 1995Co-Authors: Sivanarayanamoorthy Sivoththaman, Wim Laureys, Johan Nijs, Robert MertensAbstract:Large area n+pp+ solar cells have been fabricated on 10 cm×10 cm pseudo‐quasi‐square CZ silicon wafers (1 Ω cm, p‐type) predominantly used by the photovoltaic (PV) industry. All the high‐temperature steps have been performed by Rapid Thermal Processing (RTP). Emitter formation, back surface field (BSF) formation, and surface oxidation have been performed in just two RTP steps each lasting 50 s. Solar cells of 15% efficiency have been fabricated this way, demonstrating the applicability of this low Thermal budget technology to large area, modulable size, industrial quality Si wafers. Furthermore, the Rapid Thermal oxidation (RTO) is shown to result in good quality thin oxides with Si/SiO2 interface trap densities (Dit)<1011 cm−3 eV−1 near‐midgap.
