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Nicolas Martin - One of the best experts on this subject based on the ideXlab platform.
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Structure, composition and electronic transport properties of tungsten oxide thin film sputter-deposited by the Reactive Gas pulsing process
Materials Chemistry and Physics, 2018Co-Authors: Mohammad Yazdi, Roland Salut, Alain Billard, Jean-marc Cote, Nicolas MartinAbstract:Tungsten oxide thin films were prepared by DC magnetron sputtering. The Reactive Gas pulsing process was implemented to modify tungsten and oxygen concentrations in the films. A rectangular pulsing signal was used with a pulsing period fixed at P ¼ 16 s, whereas the duty cycle a was systematically changed from a ¼ 0e100% of P. The chemical composition of the films showed a gradual increase of oxygen-to-tungsten concentrations ratio from 0 to more than 3.0 as a function of the duty cycle. Films became poorly crystallized and even amorphous with an increase of the oxygen content. Similarly, a typical columnar structure was observed for pure or oxygen-rich tungsten films, which vanished when the duty cycle was higher than a few % of P. The optical transmittance in the visible range of WOx films deposited on glass also showed a progressive change from absorbent to transparent as the duty cycle was increased. Electronic transport properties including conductivity, carrier mobility and concentration also demonstrated the controlled and regular evolution of the electrical properties from metallic to insulator when the duty cycle and thus oxygen concentration in the films changed from pure tungsten to overstoichiometric WO3 compound.
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Tungsten oxide thin films sputter deposited by the Reactive Gas pulsing process for the dodecane detection
Materials Today: Proceedings, 2015Co-Authors: Mohammad Yazdi, Jean-yves Rauch, Roland Salut, Alain Billard, Valérie Potin, Nicolas MartinAbstract:The DC Reactive magnetron sputtering of a metallic tungsten target was performed in an argon + oxygen atmosphere for depositing tungsten oxide thin films. In order to control the oxygen concentration in the films, the Reactive Gas pulsing process, namely RGPP, was implemented. Rectangular pulses were used with a constant pulsing period T = 16 s whereas the duty cycle α (time of oxygen injection to pulsing period T ratio) was systematically changed from 0 to 100% of T. This pulsing injection of the Reactive Gas allowed a gradual evolution of the films composition from pure metallic to over-stoichiometric WO3+ɛ’ compounds. These WOx films were sputter deposited on commercial MSP 769 Heraeus platforms so as to be used as a sensor for the dodecane Gas. It is shown that the sensing performances carried out at 573 K can be adjusted as a function of the duty cycle used during the deposition stage. The relationship between sensing properties and physic-chemical behaviours of the films was especially discussed.
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Enhanced tunability of the composition in silicon oxynitride thin films by the Reactive Gas pulsing process
Applied Surface Science, 2014Co-Authors: Eric Aubry, Alain Billard, Sylvain Weber, Nicolas MartinAbstract:Silicon oxynitride thin films were sputter deposited by the Reactive Gas pulsing process. Pure silicon target was sputtered in Ar, N2 and O2 mixture atmosphere. Oxygen Gas was periodically and solely introduced using exponential signals. In order to vary the injected O2 quantity in the deposition chamber during one pulse at constant injection time (TON), the tau mounting time τmou of the exponential signals was systematically changed for each deposition. Taking into account the real-time measurements of the discharge voltage and the I(O*)/I(Ar*) emission lines ratio, it is shown that the oscillations of the discharge voltage during the TON and TOFF times (injection of O2 stopped) are attributed to the preferential adsorption of the oxygen compared to that of the nitrogen. The sputtering mode alternates from a fully nitrided mode (TOFF time) to a mixed mode (nitrided and oxidized mode) during the TON time. For the highest injected O2 quantities, the mixed mode tends toward a fully oxidized mode due to an increase of the trapped oxygen on the target. The oxygen (nitrogen) concentration in the SiOxNy films similarly (inversely) varies as the oxygen is trapped. Moreover, measurements of the contamination speed of the Si target surface are connected to different behaviors of the process. At low injected O2 quantities, the nitrided mode predominates over the oxidized one during the TON time. It leads to the formation of Si3N4-yOy-like films. Inversely, the mixed mode takes place for high injected O2 quantities and the oxidized mode prevails against the nitrided one producing SiO2-xNx-like films.
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Improvement of the mechanical and tribological properties of Cr-N system obtained by Reactive Gas pulsing DC magnetron sputtering
2013Co-Authors: Amel Zairi, Nicolas Martin, Corinne Nouveau, Alain Iost, Ahmed Ben Cheikh Larbi, Aurélien BesnardAbstract:Improvement of the mechanical and tribological properties of Cr-N system obtained by Reactive Gas pulsing DC magnetron sputtering
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Reactive Gas Pulsing Process for Oxynitride Thin Films
2013Co-Authors: Nicolas Martin, Aurélien Besnard, Jan Lintymer, Fabrice StahlAbstract:An original Reactive sputtering method, namely the Reactive Gas pulsing process (RGPP) was developed for the synthesis of titanium oxynitride thin films. Such a method implements a metallic titanium target DC sputtered, a constant supply of argon and nitrogen Gases and a pulsing oxygen mass flow rate, which is periodically controlled versus time. Various period times and different patterns can be generated: rectangle, sine, isosceles triangle, mounting or descending triangle and exponential. Real time measurements of the target potential as well as total sputtering pressure are recorded in order to study the instability phenomena of the process. They are also pertinent diagnostic tools to select the most suitable pulsing patterns required to alternate the process between the nitrided and the oxidized sputtering modes. As a result, alternation is produced for exponential and rectangular patterns. For this latter, the influence of the duty cycle α defined as the ratio of the injection time of oxygen by the pulsing period, on the behaviour of the Reactive sputtering process and optical properties of deposited films, is systematically investigated. Finally, the added value brought by the exponential patterns is examined. It is shown that the exponential signal leads to significant improvements of the oxygen injection. The purpose is to introduce the right amount of oxygen so as to poison the titanium target surface without saturating the sputtering atmosphere by oxygen. Thus, the speed of pollution of the target surface appears as an appropriate parameter to better understand the beneficial effect of the exponential shape on the control of the RGPP method.
Jamal Takadoum - One of the best experts on this subject based on the ideXlab platform.
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The Reactive Gas pulsing process for tuneable properties of sputter deposited titanium oxide, nitride and oxynitride coatings
International Journal of Materials and Product Technology, 2010Co-Authors: Nicolas Martin, Aurélien Besnard, Fabrice Sthal, Jamal TakadoumAbstract:TiOx, TiNy and TiOxNy thin films were deposited by Reactive sputtering. The Reactive Gas pulsing process was implemented to tune the chemical composition and consequently, the characteristics of the films. For TiOx coatings, oxygen concentration was progressively modified from pure titanium to TiO2 compound. Similarly, a gradual decrease of the deposition rate and a controlled modulation of the chemical composition of TiNy films (y between 0 and 1.05) were easily reached. A reverse evolution of the oxygen and nitrogen contents was produced in TiOxNy films, which was correlated with the smooth transition from metallic to semiconducting behaviours.
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Reactive sputtering of tioxny coatings by the Reactive Gas pulsing process part ii the role of the duty cycle
Surface & Coatings Technology, 2007Co-Authors: Nicolas Martin, Jamal Takadoum, Jan Lintymer, J M Chappe, J Gavoille, F Sthal, F Vaz, L ReboutaAbstract:Abstract The Reactive Gas pulsing process (RGPP) was used to deposit titanium oxynitride thin films by dc Reactive magnetron sputtering. A titanium target was sputtered in a Reactive atmosphere composed of Ar + O 2 + N 2 . Argon and nitrogen Gases were continuously introduced into the sputtering chamber whereas oxygen was injected with a well-controlled pulsing flow rate following a rectangular and periodic signal. A constant pulsing period T = 45 s was used for every deposition and the duty cycle α = t ON / T was systematically changed from 0 to 100%. The operating conditions were investigated taking into account the poisoning phenomena of the target surface by oxygen and nitrogen. Kinetics of poisoning were followed from measurements of the total sputtering pressure and titanium target potential during the depositions. Deposition rate and optical transmittance of titanium oxynitride coatings were also analysed and correlated with the process parameters. Pulsing the oxygen flow rate with rectangular patterns and using suitable duty cycles, RGPP method allows working according to reversible nitrided–oxidised target conditions and leads to the deposition of a wide range of TiO x N y thin films, from metallic TiN to insulating TiO 2 compounds.
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titanium oxynitride thin films sputter deposited by the Reactive Gas pulsing process
Applied Surface Science, 2007Co-Authors: J M Chappe, Nicolas Martin, Jan Lintymer, Fabrice Sthal, Guy Terwagne, Jamal TakadoumAbstract:Abstract DC Reactive sputtering was used to successfully make thin films of titanium oxynitride using titanium metallic target, argon as plasma Gas and nitrogen and oxygen as Reactive Gases. The nitrogen partial pressure was kept constant during every deposition whereas oxygen flow rate was pulsed using a square pattern. The study consisted in analysing the influence of the shape of the pulsed rate on physical properties of these films. In order to adjust the metalloid concentration to get films with a wide range of oxygen-to-nitrogen ratios, the Reactive Gas pulsing process (RGPP) was used. In this process, the oxygen flow switches “on” and “off” periodically according to a duty cycle α = t ON / T . Electrical conductivity of films measured against temperature was gradually modified from metallic ( σ 300K = 4.42 × 10 4 S m −1 ) to semi-conducting behaviour ( σ 300K = 7.14 S m −1 ) with an increasing duty cycle. Mechanical properties like nanohardness ( H n ) and reduced Young's modulus ( E r ) of the films were investigated. Experimental values of H n and E r obtained by nanoindentation at 10% depth ranged from 15.8 to 5.2 GPa and from 273 to 142 GPa, respectively. Evolutions of H n and E against duty cycle were similar. A regular decrease was observed for duty cycle α ≤ 25% corresponding to the occurrence of TiO x N y phase. Higher duty cycles led to the smallest values of H n and E and correlated with TiO 2 compound composition. At last, the colour variation of these titanium oxynitrides was investigated as a function of α in the L * a * b * colour space. It was related to the chemical composition of the films.
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correlation between processing and properties of tioxny thin films sputter deposited by the Reactive Gas pulsing technique
Applied Surface Science, 2001Co-Authors: Nicolas Martin, Rosendo Sanjines, Jamal Takadoum, O Banakh, Ana Maria Do Espirito Santo, S G Springer, Francis LevyAbstract:Titanium oxynitride thin films were deposited by d.c. Reactive magnetron sputtering from titanium metallic target and from oxygen and nitrogen as Reactive Gases. The nitrogen mass flow rate was maintained constant whereas that of the oxygen was pulsed during the deposition. A constant pulsing period was used and the introduction time of the oxygen was systematically changed from 0 to 100% of the period time. The Reactive Gas pulsing technique allowed to prepare TiOxNy films with various metalloid concentrations (0≤x≤2.0 and 0≤y≤1.0) and led to changes of the crystallographic structure from f.c.c. TiN to tetragonal TiO2. The variations of the metalloid content in the films result in changes in the electrical and optical properties and the reverse evolution of the oxygen and nitrogen content correlates with the transition from metallic to semiconducting behavior. The sputtering conditions were investigated taking into account the poisoning phenomena of the surface of the target from real time measurements of the target potential and from the Reactive atmosphere, followed by mass spectrometry. Such diagnostics allowed to understand and to control better the advantageous role of the Reactive Gas pulsing technique and conducted to close relationships between the process parameters and the film properties.
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Enhanced sputtering of titanium oxide, nitride and oxynitride thin films by the Reactive Gas pulsing technique
Surface & Coatings Technology, 2001Co-Authors: Nicolas Martin, Rosendo Sanjines, Jamal Takadoum, Francis LevyAbstract:The Reactive Gas pulsing technique was used to deposit titanium oxide, nitride and oxynitride thin films by d.c. Reactive magnetron sputtering. A pure titanium target was sputtered in a mixture of Ar + O 2 for TiO x , Ar + N 2 for TiN y and Ar + O 2 + N 2 for TiO x N y . The Reactive Gas was injected with a well-controlled pulsing method for titanium oxide and nitride whereas titanium oxynitride were prepared with a constant flow rate of nitrogen and a pulsing flow rate of oxygen. A constant pulsing period was used for every deposition and the injection time of the Reactive Gas was systematically changed. Instability phenomena typical to the Reactive process were prevented by this technique. An improvement of the deposition rate of TiO 2 and TiN thin films was achieved. The modulation of the Reactive Gas injection time allowed to change the crystallographic structure of the material as well as the chemical composition (1.4
Francis Levy - One of the best experts on this subject based on the ideXlab platform.
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correlation between processing and properties of tioxny thin films sputter deposited by the Reactive Gas pulsing technique
Applied Surface Science, 2001Co-Authors: Nicolas Martin, Rosendo Sanjines, Jamal Takadoum, O Banakh, Ana Maria Do Espirito Santo, S G Springer, Francis LevyAbstract:Titanium oxynitride thin films were deposited by d.c. Reactive magnetron sputtering from titanium metallic target and from oxygen and nitrogen as Reactive Gases. The nitrogen mass flow rate was maintained constant whereas that of the oxygen was pulsed during the deposition. A constant pulsing period was used and the introduction time of the oxygen was systematically changed from 0 to 100% of the period time. The Reactive Gas pulsing technique allowed to prepare TiOxNy films with various metalloid concentrations (0≤x≤2.0 and 0≤y≤1.0) and led to changes of the crystallographic structure from f.c.c. TiN to tetragonal TiO2. The variations of the metalloid content in the films result in changes in the electrical and optical properties and the reverse evolution of the oxygen and nitrogen content correlates with the transition from metallic to semiconducting behavior. The sputtering conditions were investigated taking into account the poisoning phenomena of the surface of the target from real time measurements of the target potential and from the Reactive atmosphere, followed by mass spectrometry. Such diagnostics allowed to understand and to control better the advantageous role of the Reactive Gas pulsing technique and conducted to close relationships between the process parameters and the film properties.
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Enhanced sputtering of titanium oxide, nitride and oxynitride thin films by the Reactive Gas pulsing technique
Surface & Coatings Technology, 2001Co-Authors: Nicolas Martin, Rosendo Sanjines, Jamal Takadoum, Francis LevyAbstract:The Reactive Gas pulsing technique was used to deposit titanium oxide, nitride and oxynitride thin films by d.c. Reactive magnetron sputtering. A pure titanium target was sputtered in a mixture of Ar + O 2 for TiO x , Ar + N 2 for TiN y and Ar + O 2 + N 2 for TiO x N y . The Reactive Gas was injected with a well-controlled pulsing method for titanium oxide and nitride whereas titanium oxynitride were prepared with a constant flow rate of nitrogen and a pulsing flow rate of oxygen. A constant pulsing period was used for every deposition and the injection time of the Reactive Gas was systematically changed. Instability phenomena typical to the Reactive process were prevented by this technique. An improvement of the deposition rate of TiO 2 and TiN thin films was achieved. The modulation of the Reactive Gas injection time allowed to change the crystallographic structure of the material as well as the chemical composition (1.4
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enhanced sputtering of titanium oxide nitride and oxynitride thin films by the Reactive Gas pulsing technique
Surface & Coatings Technology, 2001Co-Authors: Nicolas Martin, Rosendo Sanjines, Jamal Takadoum, Francis LevyAbstract:The Reactive Gas pulsing technique was used to deposit titanium oxide, nitride and oxynitride thin films by d.c. Reactive magnetron sputtering. A pure titanium target was sputtered in a mixture of Ar + O 2 for TiO x , Ar + N 2 for TiN y and Ar + O 2 + N 2 for TiO x N y . The Reactive Gas was injected with a well-controlled pulsing method for titanium oxide and nitride whereas titanium oxynitride were prepared with a constant flow rate of nitrogen and a pulsing flow rate of oxygen. A constant pulsing period was used for every deposition and the injection time of the Reactive Gas was systematically changed. Instability phenomena typical to the Reactive process were prevented by this technique. An improvement of the deposition rate of TiO 2 and TiN thin films was achieved. The modulation of the Reactive Gas injection time allowed to change the crystallographic structure of the material as well as the chemical composition (1.4
Reactive Gases, the pulsing technique appeared as an original way to prepare titanium oxynitride with every x, y composition. Real time measurements of the Ti target potential were used as process parameters in relation to the changes in TiO x , TiN y and TiO x N y thin film properties.
Alain Billard - One of the best experts on this subject based on the ideXlab platform.
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Structure, composition and electronic transport properties of tungsten oxide thin film sputter-deposited by the Reactive Gas pulsing process
Materials Chemistry and Physics, 2018Co-Authors: Mohammad Yazdi, Roland Salut, Alain Billard, Jean-marc Cote, Nicolas MartinAbstract:Tungsten oxide thin films were prepared by DC magnetron sputtering. The Reactive Gas pulsing process was implemented to modify tungsten and oxygen concentrations in the films. A rectangular pulsing signal was used with a pulsing period fixed at P ¼ 16 s, whereas the duty cycle a was systematically changed from a ¼ 0e100% of P. The chemical composition of the films showed a gradual increase of oxygen-to-tungsten concentrations ratio from 0 to more than 3.0 as a function of the duty cycle. Films became poorly crystallized and even amorphous with an increase of the oxygen content. Similarly, a typical columnar structure was observed for pure or oxygen-rich tungsten films, which vanished when the duty cycle was higher than a few % of P. The optical transmittance in the visible range of WOx films deposited on glass also showed a progressive change from absorbent to transparent as the duty cycle was increased. Electronic transport properties including conductivity, carrier mobility and concentration also demonstrated the controlled and regular evolution of the electrical properties from metallic to insulator when the duty cycle and thus oxygen concentration in the films changed from pure tungsten to overstoichiometric WO3 compound.
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Tungsten oxide thin films sputter deposited by the Reactive Gas pulsing process for the dodecane detection
Materials Today: Proceedings, 2015Co-Authors: Mohammad Yazdi, Jean-yves Rauch, Roland Salut, Alain Billard, Valérie Potin, Nicolas MartinAbstract:The DC Reactive magnetron sputtering of a metallic tungsten target was performed in an argon + oxygen atmosphere for depositing tungsten oxide thin films. In order to control the oxygen concentration in the films, the Reactive Gas pulsing process, namely RGPP, was implemented. Rectangular pulses were used with a constant pulsing period T = 16 s whereas the duty cycle α (time of oxygen injection to pulsing period T ratio) was systematically changed from 0 to 100% of T. This pulsing injection of the Reactive Gas allowed a gradual evolution of the films composition from pure metallic to over-stoichiometric WO3+ɛ’ compounds. These WOx films were sputter deposited on commercial MSP 769 Heraeus platforms so as to be used as a sensor for the dodecane Gas. It is shown that the sensing performances carried out at 573 K can be adjusted as a function of the duty cycle used during the deposition stage. The relationship between sensing properties and physic-chemical behaviours of the films was especially discussed.
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Enhanced tunability of the composition in silicon oxynitride thin films by the Reactive Gas pulsing process
Applied Surface Science, 2014Co-Authors: Eric Aubry, Alain Billard, Sylvain Weber, Nicolas MartinAbstract:Silicon oxynitride thin films were sputter deposited by the Reactive Gas pulsing process. Pure silicon target was sputtered in Ar, N2 and O2 mixture atmosphere. Oxygen Gas was periodically and solely introduced using exponential signals. In order to vary the injected O2 quantity in the deposition chamber during one pulse at constant injection time (TON), the tau mounting time τmou of the exponential signals was systematically changed for each deposition. Taking into account the real-time measurements of the discharge voltage and the I(O*)/I(Ar*) emission lines ratio, it is shown that the oscillations of the discharge voltage during the TON and TOFF times (injection of O2 stopped) are attributed to the preferential adsorption of the oxygen compared to that of the nitrogen. The sputtering mode alternates from a fully nitrided mode (TOFF time) to a mixed mode (nitrided and oxidized mode) during the TON time. For the highest injected O2 quantities, the mixed mode tends toward a fully oxidized mode due to an increase of the trapped oxygen on the target. The oxygen (nitrogen) concentration in the SiOxNy films similarly (inversely) varies as the oxygen is trapped. Moreover, measurements of the contamination speed of the Si target surface are connected to different behaviors of the process. At low injected O2 quantities, the nitrided mode predominates over the oxidized one during the TON time. It leads to the formation of Si3N4-yOy-like films. Inversely, the mixed mode takes place for high injected O2 quantities and the oxidized mode prevails against the nitrided one producing SiO2-xNx-like films.
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Silicon oxynitride thin films synthesised by the Reactive Gas pulsing process using rectangular pulses
Applied Surface Science, 2011Co-Authors: Eric Aubry, Alain Billard, Sylvain Weber, Nicolas MartinAbstract:Silicon oxynitride thin films were synthesised by the Reactive Gas pulsing process using an argon, oxygen and nitrogen Gas mixture from a semiconductor Si target. Argon and nitrogen were introduced at a constant mass flow rate, whereas oxygen Gas was periodically supplied using a rectangular pulsed flow rate. The O2 injection time TON (or duty cycle ˛) was the only varied parameter. The influences of this parameter on the discharge behaviour, on the Si target voltage, and on the resulting chemical composition of the films were investigated. The temporal evolution of the total pressure exhibits exponential shape differing from the rectangular oxygen pulse shape, due to the response time of the Gas flowmeter and to the progressive oxidation of the target and the chamber walls. During the TON time, the preferential adsorption of the introduced O2 induces a decay in Si target voltage. Reversion to the nitrided mode is still possible as soon as the O2 injection is stopped. The elemental analyses assessed by secondary neutral mass spectrometry (SNMS) showed that the O/N ratio within silicon oxynitride films linearly depends on the TON time. Increasing the duty cycle ˛ over a certain value results in an oxidised steady state formation during the TON time. This formation was observed by real time measurements of the emission lines ratio I(O*)/I(Ar*) indicative of the O2 partial pressure and confirmed by the time derivative of the target voltage. During the TOFF time, the alternation with the nitrided mode becomes impossible, leading to the specific synthesis of stoichiometric SiO2 films.
Rosendo Sanjines - One of the best experts on this subject based on the ideXlab platform.
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correlation between processing and properties of tioxny thin films sputter deposited by the Reactive Gas pulsing technique
Applied Surface Science, 2001Co-Authors: Nicolas Martin, Rosendo Sanjines, Jamal Takadoum, O Banakh, Ana Maria Do Espirito Santo, S G Springer, Francis LevyAbstract:Titanium oxynitride thin films were deposited by d.c. Reactive magnetron sputtering from titanium metallic target and from oxygen and nitrogen as Reactive Gases. The nitrogen mass flow rate was maintained constant whereas that of the oxygen was pulsed during the deposition. A constant pulsing period was used and the introduction time of the oxygen was systematically changed from 0 to 100% of the period time. The Reactive Gas pulsing technique allowed to prepare TiOxNy films with various metalloid concentrations (0≤x≤2.0 and 0≤y≤1.0) and led to changes of the crystallographic structure from f.c.c. TiN to tetragonal TiO2. The variations of the metalloid content in the films result in changes in the electrical and optical properties and the reverse evolution of the oxygen and nitrogen content correlates with the transition from metallic to semiconducting behavior. The sputtering conditions were investigated taking into account the poisoning phenomena of the surface of the target from real time measurements of the target potential and from the Reactive atmosphere, followed by mass spectrometry. Such diagnostics allowed to understand and to control better the advantageous role of the Reactive Gas pulsing technique and conducted to close relationships between the process parameters and the film properties.
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Enhanced sputtering of titanium oxide, nitride and oxynitride thin films by the Reactive Gas pulsing technique
Surface & Coatings Technology, 2001Co-Authors: Nicolas Martin, Rosendo Sanjines, Jamal Takadoum, Francis LevyAbstract:The Reactive Gas pulsing technique was used to deposit titanium oxide, nitride and oxynitride thin films by d.c. Reactive magnetron sputtering. A pure titanium target was sputtered in a mixture of Ar + O 2 for TiO x , Ar + N 2 for TiN y and Ar + O 2 + N 2 for TiO x N y . The Reactive Gas was injected with a well-controlled pulsing method for titanium oxide and nitride whereas titanium oxynitride were prepared with a constant flow rate of nitrogen and a pulsing flow rate of oxygen. A constant pulsing period was used for every deposition and the injection time of the Reactive Gas was systematically changed. Instability phenomena typical to the Reactive process were prevented by this technique. An improvement of the deposition rate of TiO 2 and TiN thin films was achieved. The modulation of the Reactive Gas injection time allowed to change the crystallographic structure of the material as well as the chemical composition (1.4
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enhanced sputtering of titanium oxide nitride and oxynitride thin films by the Reactive Gas pulsing technique
Surface & Coatings Technology, 2001Co-Authors: Nicolas Martin, Rosendo Sanjines, Jamal Takadoum, Francis LevyAbstract:The Reactive Gas pulsing technique was used to deposit titanium oxide, nitride and oxynitride thin films by d.c. Reactive magnetron sputtering. A pure titanium target was sputtered in a mixture of Ar + O 2 for TiO x , Ar + N 2 for TiN y and Ar + O 2 + N 2 for TiO x N y . The Reactive Gas was injected with a well-controlled pulsing method for titanium oxide and nitride whereas titanium oxynitride were prepared with a constant flow rate of nitrogen and a pulsing flow rate of oxygen. A constant pulsing period was used for every deposition and the injection time of the Reactive Gas was systematically changed. Instability phenomena typical to the Reactive process were prevented by this technique. An improvement of the deposition rate of TiO 2 and TiN thin films was achieved. The modulation of the Reactive Gas injection time allowed to change the crystallographic structure of the material as well as the chemical composition (1.4
Reactive Gases, the pulsing technique appeared as an original way to prepare titanium oxynitride with every x, y composition. Real time measurements of the Ti target potential were used as process parameters in relation to the changes in TiO x , TiN y and TiO x N y thin film properties.
