The Experts below are selected from a list of 11172 Experts worldwide ranked by ideXlab platform
Hsiang-ning Wu - One of the best experts on this subject based on the ideXlab platform.
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Electric Hum Signal Readout Circuit for Touch Screen Panel Applications
Journal of Display Technology, 2016Co-Authors: Chih-wen Lu, Chih-cheng Hsieh, Tsin-yuan Chang, Hsin-chin Liang, Hsiang-ning WuAbstract:This paper presents a new touch sensing mechanism that detects different signals on a touch panel generated by an electric field formed from household power. Without requiring complicated transmitter and receiver Circuits, a 16-channel front-end sensor and shared Readout Circuits are proposed to realize the new touch-sensing mechanism. This touch-sensing technique can be applied on the appliance control panel to detect the operation control. The signal Readout Circuit is implemented in a 0.18-μm CMOS process, which occupied an area of 2.64 mm2. The proposed sensing technique achieves 46.5-dB signal-to-noise ratios with finger touch. With battery power supply of 1.8 V and 2.5 V, total power consumption of the proposed Readout Circuit is measured as just 2 mW.
Wilfried Mokwa - One of the best experts on this subject based on the ideXlab platform.
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Capacitive pressure sensor with monolithically integrated CMOS Readout Circuit for high temperature applications
Sensors and Actuators A-physical, 2002Co-Authors: Klaus Kasten, Norbert Kordas, Holger Kappert, Wilfried MokwaAbstract:Abstract An integrated capacitive surface micromachined pressure sensor for high temperature applications was developed and characterized to work at temperatures up to 250 °C. The sensor and the CMOS Readout Circuit are processed on separation by implantation of oxygen (SIMOX) substrates. The Readout Circuit is programmable and allows calibration of linearity, offset and output range. The performance of a 20 and 50 bar sensor is discussed. Even without active temperature compensation the offset temperature coefficient (TCO) referred to full scale output (FSO) is less than 0.03%/°C between 25 and 150 °C and less than 0.09%/°C between 150 and 250 °C. The compensated linearity error is less than 0.4% FSO.
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High temperature pressure sensor with monolithically integrated CMOS Readout Circuit based on SIMOX technology
Transducers ’01 Eurosensors XV, 2001Co-Authors: Klaus Kasten, Norbert Kordas, Holger Kappert, Wilfried MokwaAbstract:An integrated capacitive surface micromachined pressure sensor for high temperature applications was developed and characterized to work at temperatures up to 250 °C. The sensor and the CMOS Readout Circuit are processed on SIMOX (Separation by IMplantation of OXygen) substrates. The Readout Circuit is programmable and allows calibration of linearity, offset and output range. The performance of a 20 bar and a 50 bar sensor is discussed. Even without active temperature compensation the offset temperature coefficient referred to full scale output (FSO) is less than 0.03 %/°C between 25 °C and 150 °C and less than 0.09 %/°C between 150 °C and 250 °C. The linearity error is less than 0.4% FSO.
Chih-wen Lu - One of the best experts on this subject based on the ideXlab platform.
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Electric Hum Signal Readout Circuit for Touch Screen Panel Applications
Journal of Display Technology, 2016Co-Authors: Chih-wen Lu, Chih-cheng Hsieh, Tsin-yuan Chang, Hsin-chin Liang, Hsiang-ning WuAbstract:This paper presents a new touch sensing mechanism that detects different signals on a touch panel generated by an electric field formed from household power. Without requiring complicated transmitter and receiver Circuits, a 16-channel front-end sensor and shared Readout Circuits are proposed to realize the new touch-sensing mechanism. This touch-sensing technique can be applied on the appliance control panel to detect the operation control. The signal Readout Circuit is implemented in a 0.18-μm CMOS process, which occupied an area of 2.64 mm2. The proposed sensing technique achieves 46.5-dB signal-to-noise ratios with finger touch. With battery power supply of 1.8 V and 2.5 V, total power consumption of the proposed Readout Circuit is measured as just 2 mW.
Dongil Dan Cho - One of the best experts on this subject based on the ideXlab platform.
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highly programmable temperature compensated Readout Circuit for capacitive microaccelerometer
Sensors and Actuators A-physical, 2010Co-Authors: Dongil Dan ChoAbstract:Abstract This paper describes a capacitive microaccelerometer system and Readout Circuit topology with a high programmability and a low temperature dependency. The MEMS sensing element is fabricated using the Sacrificial Bulk Micromachining (SBM) process and the Wafer Level Hermetic Packaging (WLHP) process, to achieve high reliability, low noise and low bias instability. The Readout Circuit exploits a highly programmable capacitive sensing architecture with an on-chip EEPROM in order to calibrate the output offset and the scale factor. The temperature compensated sub-Circuits, including a bandgap reference, a current reference, and an oscillator, are designed to enhance the temperature characteristics. The supply voltage variations are compensated for by using an on-chip voltage regulator. The reverse voltage protection Circuit is also designed to enhance the electrical reliability. After calibrating the scale factor and the offset by using the programmable Circuits, the scale factor error and the offset error are compensated to 1.2%FSO and 3.3%FSO, respectively. The temperature coefficient of the offset is measured to be 43 ppm/°C in the temperature range from −40 °C to 125 °C. The bias instability and the noise equivalent resolution are measured to be in the range from 16.1 μg to 135.2 μg, and from 93.5 μ g/ Hz to 514.0 μ g/ Hz , respectively.
Hyoungho Ko - One of the best experts on this subject based on the ideXlab platform.
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Highly programmable temperature compensated Readout Circuit for capacitive microaccelerometer
Sensors and Actuators A-physical, 2010Co-Authors: Hyoungho KoAbstract:Abstract This paper describes a capacitive microaccelerometer system and Readout Circuit topology with a high programmability and a low temperature dependency. The MEMS sensing element is fabricated using the Sacrificial Bulk Micromachining (SBM) process and the Wafer Level Hermetic Packaging (WLHP) process, to achieve high reliability, low noise and low bias instability. The Readout Circuit exploits a highly programmable capacitive sensing architecture with an on-chip EEPROM in order to calibrate the output offset and the scale factor. The temperature compensated sub-Circuits, including a bandgap reference, a current reference, and an oscillator, are designed to enhance the temperature characteristics. The supply voltage variations are compensated for by using an on-chip voltage regulator. The reverse voltage protection Circuit is also designed to enhance the electrical reliability. After calibrating the scale factor and the offset by using the programmable Circuits, the scale factor error and the offset error are compensated to 1.2%FSO and 3.3%FSO, respectively. The temperature coefficient of the offset is measured to be 43 ppm/°C in the temperature range from −40 °C to 125 °C. The bias instability and the noise equivalent resolution are measured to be in the range from 16.1 μg to 135.2 μg, and from 93.5 μ g/ Hz to 514.0 μ g/ Hz , respectively.
