The Experts below are selected from a list of 4317 Experts worldwide ranked by ideXlab platform

D.m. Sedlovets - One of the best experts on this subject based on the ideXlab platform.

  • Growth of SiC films on silicon substrate by cold implantation of carbon Recoil Atoms
    Materials Letters, 2018
    Co-Authors: V. I. Zinenko, Yu. A. Agafonov, V. V. Saraykin, V.g. Eremenko, Dmitry Roshchupkin, D.m. Sedlovets
    Abstract:

    Abstract A novel method of silicon carbide growth on silicon substrates is proposed. The method makes use of carbon Recoil Atoms implantation from a layer of molecules of carbon-containing gas, adsorbed on a cooled silicon surface bombarded by argon ions. A silicon carbide film is formed on the surface of a Si(1 1 1) substrate after high-temperature annealing in vacuum. The film properties are studied by IR-spectroscopy, XRD, AFM and optical microscopy methods. The studies have shown that the proposed method enables the growth of single-crystalline SiC films on the Si crystal surface.

V. I. Zinenko - One of the best experts on this subject based on the ideXlab platform.

  • Growth of SiC films on silicon substrate by cold implantation of carbon Recoil Atoms
    Materials Letters, 2018
    Co-Authors: V. I. Zinenko, Yu. A. Agafonov, V. V. Saraykin, V.g. Eremenko, Dmitry Roshchupkin, D.m. Sedlovets
    Abstract:

    Abstract A novel method of silicon carbide growth on silicon substrates is proposed. The method makes use of carbon Recoil Atoms implantation from a layer of molecules of carbon-containing gas, adsorbed on a cooled silicon surface bombarded by argon ions. A silicon carbide film is formed on the surface of a Si(1 1 1) substrate after high-temperature annealing in vacuum. The film properties are studied by IR-spectroscopy, XRD, AFM and optical microscopy methods. The studies have shown that the proposed method enables the growth of single-crystalline SiC films on the Si crystal surface.

  • Graphene synthesis by cold implantation of carbon Recoil Atoms
    Technical Physics Letters, 2017
    Co-Authors: Yu. A. Agafonov, V. I. Zinenko, O. V. Kononenko, V. V. Saraykin
    Abstract:

    A new method of introducing carbon into catalytic metal films for graphene synthesis is proposed. The method is based on the phenomenon of carbon Recoil Atoms from a layer of methane molecules that are adsorbed on a metal film being incorporated into this film under the action of bombardment with inert gas ions. To increase the thickness of adsorbed methane layer, the substrate is cooled down to −190°C. The proposed method has been implemented on a polycrystalline nickel film. After the final annealing, Raman spectroscopy showed the presence of numerous fragments of multilayer graphene on the film surface.

V. V. Saraykin - One of the best experts on this subject based on the ideXlab platform.

  • Growth of SiC films on silicon substrate by cold implantation of carbon Recoil Atoms
    Materials Letters, 2018
    Co-Authors: V. I. Zinenko, Yu. A. Agafonov, V. V. Saraykin, V.g. Eremenko, Dmitry Roshchupkin, D.m. Sedlovets
    Abstract:

    Abstract A novel method of silicon carbide growth on silicon substrates is proposed. The method makes use of carbon Recoil Atoms implantation from a layer of molecules of carbon-containing gas, adsorbed on a cooled silicon surface bombarded by argon ions. A silicon carbide film is formed on the surface of a Si(1 1 1) substrate after high-temperature annealing in vacuum. The film properties are studied by IR-spectroscopy, XRD, AFM and optical microscopy methods. The studies have shown that the proposed method enables the growth of single-crystalline SiC films on the Si crystal surface.

  • Graphene synthesis by cold implantation of carbon Recoil Atoms
    Technical Physics Letters, 2017
    Co-Authors: Yu. A. Agafonov, V. I. Zinenko, O. V. Kononenko, V. V. Saraykin
    Abstract:

    A new method of introducing carbon into catalytic metal films for graphene synthesis is proposed. The method is based on the phenomenon of carbon Recoil Atoms from a layer of methane molecules that are adsorbed on a metal film being incorporated into this film under the action of bombardment with inert gas ions. To increase the thickness of adsorbed methane layer, the substrate is cooled down to −190°C. The proposed method has been implemented on a polycrystalline nickel film. After the final annealing, Raman spectroscopy showed the presence of numerous fragments of multilayer graphene on the film surface.

Yu. A. Agafonov - One of the best experts on this subject based on the ideXlab platform.

  • Growth of SiC films on silicon substrate by cold implantation of carbon Recoil Atoms
    Materials Letters, 2018
    Co-Authors: V. I. Zinenko, Yu. A. Agafonov, V. V. Saraykin, V.g. Eremenko, Dmitry Roshchupkin, D.m. Sedlovets
    Abstract:

    Abstract A novel method of silicon carbide growth on silicon substrates is proposed. The method makes use of carbon Recoil Atoms implantation from a layer of molecules of carbon-containing gas, adsorbed on a cooled silicon surface bombarded by argon ions. A silicon carbide film is formed on the surface of a Si(1 1 1) substrate after high-temperature annealing in vacuum. The film properties are studied by IR-spectroscopy, XRD, AFM and optical microscopy methods. The studies have shown that the proposed method enables the growth of single-crystalline SiC films on the Si crystal surface.

  • Graphene synthesis by cold implantation of carbon Recoil Atoms
    Technical Physics Letters, 2017
    Co-Authors: Yu. A. Agafonov, V. I. Zinenko, O. V. Kononenko, V. V. Saraykin
    Abstract:

    A new method of introducing carbon into catalytic metal films for graphene synthesis is proposed. The method is based on the phenomenon of carbon Recoil Atoms from a layer of methane molecules that are adsorbed on a metal film being incorporated into this film under the action of bombardment with inert gas ions. To increase the thickness of adsorbed methane layer, the substrate is cooled down to −190°C. The proposed method has been implemented on a polycrystalline nickel film. After the final annealing, Raman spectroscopy showed the presence of numerous fragments of multilayer graphene on the film surface.

A. A. Lebedev - One of the best experts on this subject based on the ideXlab platform.

  • Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers
    Semiconductors, 2018
    Co-Authors: V. V. Kozlovski, A. E. Vasil’ev, P. A. Karaseov, A. A. Lebedev
    Abstract:

    Mathematical simulation of the cascade of displacements in SiC is used to consider the specific features of Frenkel-pair generation upon the scattering of 8- and 15-MeV protons. The distribution histograms of energies acquired not only by primary knocked-out Atoms, but also by Recoil Atoms generated in displacement cascades, are calculated. An analysis of the histograms considers two energy ranges. In the first range of “low” energies, the spontaneous recombination of genetically related Frenkel pairs is dominant. Recoil Atoms in the second range have a higher energy, which enables these Atoms to leave the spontaneousrecombination zone and dissociate into isolated components. The compensation of lightly doped n - and p -4 H -SiC samples grown by gas-phase epitaxy is experimentally studied under irradiation with 8- and 15-MeV protons. The carrier removal rates are measured. The calculated and experimental data are compared and estimates are obtained for the size of the spontaneous-recombination zone.

  • effect of Recoil Atoms on radiation defect formation in semiconductors under 1 10 mev proton irradiation
    Journal of Surface Investigation-x-ray Synchrotron and Neutron Techniques, 2016
    Co-Authors: V. V. Kozlovski, A E Vasilev, A. A. Lebedev
    Abstract:

    The formation of radiation defects in Si under 1–10-MeV proton bombardment is analyzed. Numerical simulation is carried out, and histograms of the distribution of the energy transferred to Recoil Atoms are obtained. Two energy ranges are considered when analyzing the histograms. Single Frenkel pairs with closely located components are produced in the first range (small energies). Recoil Atoms of the second range have an energy sufficient for the production of a displacement cascade. As a result, nanoscale regions with high densities of vacancies and different types of their complexes appear. In addition, as the energy of the primary knocked-out Atoms increases, the average distance between genetically related Frenkel pairs increases, and, as a consequence, the fraction of pairs that are not recombined under bombardment increases.

  • Effect of Recoil Atoms on radiation-defect formation in semiconductors under 1–10-MeV proton irradiation
    Journal of Surface Investigation. X-ray Synchrotron and Neutron Techniques, 2016
    Co-Authors: V. V. Kozlovski, A. E. Vasil’ev, A. A. Lebedev
    Abstract:

    The formation of radiation defects in Si under 1–10-MeV proton bombardment is analyzed. Numerical simulation is carried out, and histograms of the distribution of the energy transferred to Recoil Atoms are obtained. Two energy ranges are considered when analyzing the histograms. Single Frenkel pairs with closely located components are produced in the first range (small energies). Recoil Atoms of the second range have an energy sufficient for the production of a displacement cascade. As a result, nanoscale regions with high densities of vacancies and different types of their complexes appear. In addition, as the energy of the primary knocked-out Atoms increases, the average distance between genetically related Frenkel pairs increases, and, as a consequence, the fraction of pairs that are not recombined under bombardment increases.

  • Energy distribution of Recoil Atoms and formation of radiation defects in silicon carbide films under proton irradiation
    Semiconductors, 2011
    Co-Authors: A. M. Ivanov, V. V. Kozlovski, N. B. Strokan, A. A. Lebedev
    Abstract:

    Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to Recoil Atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, Recoil Atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.