The Experts below are selected from a list of 249 Experts worldwide ranked by ideXlab platform
Nick Holonyak - One of the best experts on this subject based on the ideXlab platform.
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Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature
IEEE Photonics Technology Letters, 2013Co-Authors: Rohan Bambery, Milton Feng, John M. Dallesasse, Nick HolonyakAbstract:Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast Spontaneous Recombination lifetime (~ 30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I/ITH=3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels (I/ITH=2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported.
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Stochastic base doping and quantum-well enhancement of Recombination in an n-p-n light-emitting transistor or transistor laser
Applied Physics Letters, 2010Co-Authors: Han Wui Then, Nick Holonyak, Milton Feng, Gabriel WalterAbstract:Data and analysis are presented showing that heavy p-type stochastic doping of the base barrier region of an n-p-n quantum-well (QW) light-emitting transistor (LET) or transistor laser (TL), the acceptors within tunneling range of the QW and perturbing the QW, enhances the LET or TL base Recombination (base current) and the device speed (bandwidth). A relationship between the Spontaneous Recombination rate (1/lifetime, 1/τ) and the base current density is derived by considering (stochastic-doping) modified rate balance equations involving the Spontaneous, A21, and stimulated Recombination coefficients, B21=B12, and is verified with experimental optical microwave modulation (bandwidth) data obtained on QW-LETs.
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microwave determination of electron hole Recombination dynamics from Spontaneous to stimulated emission in a quantum well microcavity laser
Applied Physics Letters, 2010Co-Authors: Chaohsin Wu, Han Wui Then, Milton Feng, Nick HolonyakAbstract:By studying the optical microwave frequency response of a microcavity quantum-well vertical cavity surface-emitting laser (VCSEL) in the transition, over a low (a spread-out) mode density, from Spontaneous to coherent operation, we resolve the dynamics (Spontaneous to stimulated) of electron-hole Recombination and reveal the existence of “fast” Spontaneous Recombination (τBspon<159 ps) in a carrier population generally characterized by a large average lifetime of ∼1 ns (Δn/τav=Δn1/τfast+(Δn−Δn1)/τslow,τfast<τslow). The measured average Spontaneous lifetime is not a constant but is altered by the device size, geometry, and boundary conditions (e. g., cavity and current input-output boundary conditions).
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Microwave determination of electron-hole Recombination dynamics from Spontaneous to stimulated emission in a quantum-well microcavity laser
Applied Physics Letters, 2010Co-Authors: Han Wui Then, Milton Feng, Nick HolonyakAbstract:By studying the optical microwave frequency response of a microcavity quantum-well vertical cavity surface-emitting laser (VCSEL) in the transition, over a low (a spread-out) mode density, from Spontaneous to coherent operation, we resolve the dynamics (Spontaneous to stimulated) of electron-hole Recombination and reveal the existence of “fast” Spontaneous Recombination (τBspon
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resonance free frequency response of a semiconductor laser
Applied Physics Letters, 2009Co-Authors: Milton Feng, Nick Holonyak, G Walter, Han Wui Then, A JamesAbstract:We show experimentally and analytically that fast Spontaneous Recombination lifetime, τB,spon, leads to resonance-free frequency response in semiconductor lasers, and as a consequence higher speed operation. Faster τB,spon is obtained by a reverse-bias collector field pinning and tilting a dynamic (removable) charge population in a thin base (τt∼ps), allowing only “fast” Recombination. We show resonance-free optical response on a prototype transistor laser (TL) with τB,spon∼29 ps. Based on the TL, a resonance-free tilted-charge diode laser, is demonstrated with a 10.3 Gb/s “clean open-eye” signal achieved with a −3 dB bandwidth device of only 5.6 GHz.
Milton Feng - One of the best experts on this subject based on the ideXlab platform.
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Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature
IEEE Photonics Technology Letters, 2013Co-Authors: Rohan Bambery, Milton Feng, John M. Dallesasse, Nick HolonyakAbstract:Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast Spontaneous Recombination lifetime (~ 30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I/ITH=3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels (I/ITH=2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported.
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Stochastic base doping and quantum-well enhancement of Recombination in an n-p-n light-emitting transistor or transistor laser
Applied Physics Letters, 2010Co-Authors: Han Wui Then, Nick Holonyak, Milton Feng, Gabriel WalterAbstract:Data and analysis are presented showing that heavy p-type stochastic doping of the base barrier region of an n-p-n quantum-well (QW) light-emitting transistor (LET) or transistor laser (TL), the acceptors within tunneling range of the QW and perturbing the QW, enhances the LET or TL base Recombination (base current) and the device speed (bandwidth). A relationship between the Spontaneous Recombination rate (1/lifetime, 1/τ) and the base current density is derived by considering (stochastic-doping) modified rate balance equations involving the Spontaneous, A21, and stimulated Recombination coefficients, B21=B12, and is verified with experimental optical microwave modulation (bandwidth) data obtained on QW-LETs.
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microwave determination of electron hole Recombination dynamics from Spontaneous to stimulated emission in a quantum well microcavity laser
Applied Physics Letters, 2010Co-Authors: Chaohsin Wu, Han Wui Then, Milton Feng, Nick HolonyakAbstract:By studying the optical microwave frequency response of a microcavity quantum-well vertical cavity surface-emitting laser (VCSEL) in the transition, over a low (a spread-out) mode density, from Spontaneous to coherent operation, we resolve the dynamics (Spontaneous to stimulated) of electron-hole Recombination and reveal the existence of “fast” Spontaneous Recombination (τBspon<159 ps) in a carrier population generally characterized by a large average lifetime of ∼1 ns (Δn/τav=Δn1/τfast+(Δn−Δn1)/τslow,τfast<τslow). The measured average Spontaneous lifetime is not a constant but is altered by the device size, geometry, and boundary conditions (e. g., cavity and current input-output boundary conditions).
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Microwave determination of electron-hole Recombination dynamics from Spontaneous to stimulated emission in a quantum-well microcavity laser
Applied Physics Letters, 2010Co-Authors: Han Wui Then, Milton Feng, Nick HolonyakAbstract:By studying the optical microwave frequency response of a microcavity quantum-well vertical cavity surface-emitting laser (VCSEL) in the transition, over a low (a spread-out) mode density, from Spontaneous to coherent operation, we resolve the dynamics (Spontaneous to stimulated) of electron-hole Recombination and reveal the existence of “fast” Spontaneous Recombination (τBspon
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resonance free frequency response of a semiconductor laser
Applied Physics Letters, 2009Co-Authors: Milton Feng, Nick Holonyak, G Walter, Han Wui Then, A JamesAbstract:We show experimentally and analytically that fast Spontaneous Recombination lifetime, τB,spon, leads to resonance-free frequency response in semiconductor lasers, and as a consequence higher speed operation. Faster τB,spon is obtained by a reverse-bias collector field pinning and tilting a dynamic (removable) charge population in a thin base (τt∼ps), allowing only “fast” Recombination. We show resonance-free optical response on a prototype transistor laser (TL) with τB,spon∼29 ps. Based on the TL, a resonance-free tilted-charge diode laser, is demonstrated with a 10.3 Gb/s “clean open-eye” signal achieved with a −3 dB bandwidth device of only 5.6 GHz.
A.a. Kafu - One of the best experts on this subject based on the ideXlab platform.
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Spontaneous Recombination between wp and the translocation breakpoint in the t y wp 30c genetic sexing strain of ceratitis capitata wied
Heredity, 1993Co-Authors: A.a. Kafu, Roger J. Wood, G S Mani, E BuschpetersenAbstract:Spontaneous Recombination between wp + and the translocation breakpoint in the T:Y( wp + )30C genetic sexing strain of Ceratitis capitata (Wied.)
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Spontaneous Recombination between wp + and the translocation breakpoint in the T:Y( wp + )30C genetic sexing strain of Ceratitis capitata (Wied.)
Heredity, 1993Co-Authors: A.a. Kafu, Roger J. Wood, G S Mani, E Busch-petersenAbstract:Spontaneous Recombination between wp + and the translocation breakpoint in the T:Y( wp + )30C genetic sexing strain of Ceratitis capitata (Wied.)
Stefan Jentsch - One of the best experts on this subject based on the ideXlab platform.
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role of cdc48 p97 as a sumo targeted segregase curbing rad51 rad52 interaction
Nature Cell Biology, 2013Co-Authors: Steven Bergink, Tim Ammon, Maximilian Kern, Lothar Schermelleh, Heinrich Leonhardt, Stefan JentschAbstract:The segregase Cdc48 (also called p97 or VCP) extracts ubiquitylated proteins from their environment. Jentsch and colleagues demonstrate that Cdc48 binds SUMOylated Rad52, and removes Rad52 and the recombinase Rad51 from DNA to restrict Spontaneous Recombination.
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Role of Cdc48/p97 as a SUMO-targeted segregase curbing Rad51–Rad52 interaction
Nature cell biology, 2013Co-Authors: Steven Bergink, Tim Ammon, Lothar Schermelleh, Heinrich Leonhardt, Maximilian J. Kern, Stefan JentschAbstract:The segregase Cdc48 (also called p97 or VCP) extracts ubiquitylated proteins from their environment. Jentsch and colleagues demonstrate that Cdc48 binds SUMOylated Rad52, and removes Rad52 and the recombinase Rad51 from DNA to restrict Spontaneous Recombination.
Han Wui Then - One of the best experts on this subject based on the ideXlab platform.
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Stochastic base doping and quantum-well enhancement of Recombination in an n-p-n light-emitting transistor or transistor laser
Applied Physics Letters, 2010Co-Authors: Han Wui Then, Nick Holonyak, Milton Feng, Gabriel WalterAbstract:Data and analysis are presented showing that heavy p-type stochastic doping of the base barrier region of an n-p-n quantum-well (QW) light-emitting transistor (LET) or transistor laser (TL), the acceptors within tunneling range of the QW and perturbing the QW, enhances the LET or TL base Recombination (base current) and the device speed (bandwidth). A relationship between the Spontaneous Recombination rate (1/lifetime, 1/τ) and the base current density is derived by considering (stochastic-doping) modified rate balance equations involving the Spontaneous, A21, and stimulated Recombination coefficients, B21=B12, and is verified with experimental optical microwave modulation (bandwidth) data obtained on QW-LETs.
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microwave determination of electron hole Recombination dynamics from Spontaneous to stimulated emission in a quantum well microcavity laser
Applied Physics Letters, 2010Co-Authors: Chaohsin Wu, Han Wui Then, Milton Feng, Nick HolonyakAbstract:By studying the optical microwave frequency response of a microcavity quantum-well vertical cavity surface-emitting laser (VCSEL) in the transition, over a low (a spread-out) mode density, from Spontaneous to coherent operation, we resolve the dynamics (Spontaneous to stimulated) of electron-hole Recombination and reveal the existence of “fast” Spontaneous Recombination (τBspon<159 ps) in a carrier population generally characterized by a large average lifetime of ∼1 ns (Δn/τav=Δn1/τfast+(Δn−Δn1)/τslow,τfast<τslow). The measured average Spontaneous lifetime is not a constant but is altered by the device size, geometry, and boundary conditions (e. g., cavity and current input-output boundary conditions).
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Microwave determination of electron-hole Recombination dynamics from Spontaneous to stimulated emission in a quantum-well microcavity laser
Applied Physics Letters, 2010Co-Authors: Han Wui Then, Milton Feng, Nick HolonyakAbstract:By studying the optical microwave frequency response of a microcavity quantum-well vertical cavity surface-emitting laser (VCSEL) in the transition, over a low (a spread-out) mode density, from Spontaneous to coherent operation, we resolve the dynamics (Spontaneous to stimulated) of electron-hole Recombination and reveal the existence of “fast” Spontaneous Recombination (τBspon
-
resonance free frequency response of a semiconductor laser
Applied Physics Letters, 2009Co-Authors: Milton Feng, Nick Holonyak, G Walter, Han Wui Then, A JamesAbstract:We show experimentally and analytically that fast Spontaneous Recombination lifetime, τB,spon, leads to resonance-free frequency response in semiconductor lasers, and as a consequence higher speed operation. Faster τB,spon is obtained by a reverse-bias collector field pinning and tilting a dynamic (removable) charge population in a thin base (τt∼ps), allowing only “fast” Recombination. We show resonance-free optical response on a prototype transistor laser (TL) with τB,spon∼29 ps. Based on the TL, a resonance-free tilted-charge diode laser, is demonstrated with a 10.3 Gb/s “clean open-eye” signal achieved with a −3 dB bandwidth device of only 5.6 GHz.
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4.3 GHz optical bandwidth light emitting transistor
Applied Physics Letters, 2009Co-Authors: Gabriel Walter, Han Wui Then, Milton Feng, Nick HolonyakAbstract:We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB optical response bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, β (=|ΔIC/ΔIB|) as high as 30, and can be operated as a three-port device to provide simultaneously an optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier Recombination lifetime of 37 ps, and shows that “fast” Spontaneous Recombination can be harnessed for high-speed modulation.
