The Experts below are selected from a list of 225 Experts worldwide ranked by ideXlab platform
D. L. Kwong - One of the best experts on this subject based on the ideXlab platform.
-
Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices
IEEE Transactions on Electron Devices, 2007Co-Authors: Xin Peng Wang, Ming-fu Li, H. Y. Yu, Albert Chin, A. D. Trigg, S. Biesemans, G. Q. Lo, D. L. KwongAbstract:A lanthanum (La)-doped HfN is investigated as an n-type Metal gate electrode on SiO2 with tunable work function. The variation of La concentration in (HfinfinLa1-x)Ny modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900degC to 1000degC), which makes it suitable for n-channel MOSFET application. An ultrathin high-fc dielectric layer was formed at the Metal/SiO2 interface due to the (HfinfinLa1-x)Ny and SiO2 interaction during annealing. This causes a slight reduction in the effective oxide thickness and improves the tunneling current of the gate dielectric by two to three orders. We also report the tunability of TaN with Al doping, which is suitable for a p-type Metal gate work function. Based on our results, several dual-gate integration processes by incorporating lanthanum or aluminum into a Refractory Metal nitride for CMOS technology are proposed.
-
Work function tunability by incorporating lanthanum and aluminum into Refractory Metal nitrides and a feasible integration process
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006Co-Authors: Xin Peng Wang, Ming-fu Li, H. Y. Yu, Albert Chin, A. D. Trigg, S. Biesemans, G. Q. Lo, D. L. KwongAbstract:In this work, lanthanum-incorporated Refractory Metal nitride is investigated as an n-type Metal gate electrode with tunable work function. By adding La into HfN Metal gate deposited on SiO2 gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. The authors also report the effective work function of TaN can be tuned to p-type with the incorporation of Al based on our findings, we propose a feasible integration process for dual Metal gate CMOS technology
Xin Peng Wang - One of the best experts on this subject based on the ideXlab platform.
-
Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices
IEEE Transactions on Electron Devices, 2007Co-Authors: Xin Peng Wang, Ming-fu Li, H. Y. Yu, Albert Chin, A. D. Trigg, S. Biesemans, G. Q. Lo, D. L. KwongAbstract:A lanthanum (La)-doped HfN is investigated as an n-type Metal gate electrode on SiO2 with tunable work function. The variation of La concentration in (HfinfinLa1-x)Ny modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900degC to 1000degC), which makes it suitable for n-channel MOSFET application. An ultrathin high-fc dielectric layer was formed at the Metal/SiO2 interface due to the (HfinfinLa1-x)Ny and SiO2 interaction during annealing. This causes a slight reduction in the effective oxide thickness and improves the tunneling current of the gate dielectric by two to three orders. We also report the tunability of TaN with Al doping, which is suitable for a p-type Metal gate work function. Based on our results, several dual-gate integration processes by incorporating lanthanum or aluminum into a Refractory Metal nitride for CMOS technology are proposed.
-
Work function tunability by incorporating lanthanum and aluminum into Refractory Metal nitrides and a feasible integration process
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006Co-Authors: Xin Peng Wang, Ming-fu Li, H. Y. Yu, Albert Chin, A. D. Trigg, S. Biesemans, G. Q. Lo, D. L. KwongAbstract:In this work, lanthanum-incorporated Refractory Metal nitride is investigated as an n-type Metal gate electrode with tunable work function. By adding La into HfN Metal gate deposited on SiO2 gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. The authors also report the effective work function of TaN can be tuned to p-type with the incorporation of Al based on our findings, we propose a feasible integration process for dual Metal gate CMOS technology
Tamsin Whitfield - One of the best experts on this subject based on the ideXlab platform.
-
the effect of al on the formation and stability of a bcc b2 microstructure in a Refractory Metal high entropy superalloy system
Materialia, 2020Co-Authors: Tamsin Whitfield, E J Pickering, C N Jones, H J Stone, L R Owen, N G JonesAbstract:Abstract The development of Refractory Metal high entropy superalloys has received great interest due to their potential for high temperature structural applications. The formation of a two phase nanoscale microstructure, comprising bcc and ordered B2 phases, is thought to be fundamentally linked to the presence of Al. As such, determining the influence of Al concentration on the microstructural formation and thermal stability of these novel materials is critical for future alloy development. To elucidate this effect, the microstructural evolution of a series of alloys with systematically varying compositions from the Ti-Ta-Zr-Alx system have been studied following homogenisation and long term exposures at 1100, 900 and 700 ˚C. Nanoscale cuboidal morphologies were observed in all alloys, but ordering was only observed when the bulk Al content was > 5 at.%. These results indicated that a common formation mechanism, thought to be spinodal decomposition, occurred prior to any B2 ordering. The results also showed that the B2 phase was only stable to relatively moderate temperatures,
-
observation of a Refractory Metal matrix containing zr ti rich precipitates in a mo0 5nbta0 5tizr high entropy alloy
Scripta Materialia, 2020Co-Authors: Tamsin Whitfield, E J Pickering, C E Talbot, C N Jones, H J Stone, Nick JonesAbstract:Abstract Refractory Metal high entropy superalloys (RMHES) offer potentially superior strength at elevated temperatures and lower densities than Ni-based superalloys. However, concerns exist over their ductility as their microstructures comprise fine distributions of Refractory Metal solid solution precipitates within a Zr- and Ti-rich ordered matrix. Consequently, identifying methodologies to invert this arrangement is critical. Here, we show that removal of Al from the AlMo0.5NbTa0.5TiZr RMHES, enables a microstructure to be obtained comprising Zr-Ti-rich disordered precipitates within a Refractory Metal matrix. This observation represents a significant development for the field and may help guide future alloy design.
-
elucidating the microstructural development of Refractory Metal high entropy superalloys via the ti ta zr constituent system
Journal of Alloys and Compounds, 2020Co-Authors: Tamsin Whitfield, E J Pickering, C N Jones, H J Stone, K A Christofidou, N G JonesAbstract:Abstract The recently developed Refractory Metal High Entropy Superalloys have the potential to replace Ni-based alloys in very high temperature structural applications. However, the microstructures of these new alloys typically consist of Refractory Metal based solid solution precipitates within an ordered superlattice structured matrix, which is likely to compromise key properties such as toughness. As such, there is significant interest in inverting this arrangement, such that superlattice precipitates form within a disordered Refractory Metal matrix. Yet the mechanisms by which these microstructures form and how they might be modified with compositional variations are currently unclear. To elucidate these mechanisms, the microstructural evolution of a series of compositionally simpler alloys from the Ti–Ta–Zr system have been studied following long term exposures at 700, 900 and 1000 °C. Exposures of up to 1000 h were used as a proxy to equilibrium and the resulting microstructures were analysed using advanced scanning and transmission electron microscopy methods. The microstructures of these alloys were found to predominantly contain one or two bcc phases, the lengthscale and morphology of which changed with exposure temperature. From these results it is established that the fine-scale microstructure, which is very similar to that widely reported in the more compositionally complex Refractory Metal high entropy superalloys, forms via spinodal decomposition during cooling. It is also shown, for the first time, how compositional modification can lead to a Refractory Metal solid solution based matrix. It is believed that these results provide key insights that can guide further development in the more complex systems that will be required for commercial applications.
G. Q. Lo - One of the best experts on this subject based on the ideXlab platform.
-
Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices
IEEE Transactions on Electron Devices, 2007Co-Authors: Xin Peng Wang, Ming-fu Li, H. Y. Yu, Albert Chin, A. D. Trigg, S. Biesemans, G. Q. Lo, D. L. KwongAbstract:A lanthanum (La)-doped HfN is investigated as an n-type Metal gate electrode on SiO2 with tunable work function. The variation of La concentration in (HfinfinLa1-x)Ny modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900degC to 1000degC), which makes it suitable for n-channel MOSFET application. An ultrathin high-fc dielectric layer was formed at the Metal/SiO2 interface due to the (HfinfinLa1-x)Ny and SiO2 interaction during annealing. This causes a slight reduction in the effective oxide thickness and improves the tunneling current of the gate dielectric by two to three orders. We also report the tunability of TaN with Al doping, which is suitable for a p-type Metal gate work function. Based on our results, several dual-gate integration processes by incorporating lanthanum or aluminum into a Refractory Metal nitride for CMOS technology are proposed.
-
Work function tunability by incorporating lanthanum and aluminum into Refractory Metal nitrides and a feasible integration process
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006Co-Authors: Xin Peng Wang, Ming-fu Li, H. Y. Yu, Albert Chin, A. D. Trigg, S. Biesemans, G. Q. Lo, D. L. KwongAbstract:In this work, lanthanum-incorporated Refractory Metal nitride is investigated as an n-type Metal gate electrode with tunable work function. By adding La into HfN Metal gate deposited on SiO2 gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. The authors also report the effective work function of TaN can be tuned to p-type with the incorporation of Al based on our findings, we propose a feasible integration process for dual Metal gate CMOS technology
Ming-fu Li - One of the best experts on this subject based on the ideXlab platform.
-
Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices
IEEE Transactions on Electron Devices, 2007Co-Authors: Xin Peng Wang, Ming-fu Li, H. Y. Yu, Albert Chin, A. D. Trigg, S. Biesemans, G. Q. Lo, D. L. KwongAbstract:A lanthanum (La)-doped HfN is investigated as an n-type Metal gate electrode on SiO2 with tunable work function. The variation of La concentration in (HfinfinLa1-x)Ny modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900degC to 1000degC), which makes it suitable for n-channel MOSFET application. An ultrathin high-fc dielectric layer was formed at the Metal/SiO2 interface due to the (HfinfinLa1-x)Ny and SiO2 interaction during annealing. This causes a slight reduction in the effective oxide thickness and improves the tunneling current of the gate dielectric by two to three orders. We also report the tunability of TaN with Al doping, which is suitable for a p-type Metal gate work function. Based on our results, several dual-gate integration processes by incorporating lanthanum or aluminum into a Refractory Metal nitride for CMOS technology are proposed.
-
Work function tunability by incorporating lanthanum and aluminum into Refractory Metal nitrides and a feasible integration process
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006Co-Authors: Xin Peng Wang, Ming-fu Li, H. Y. Yu, Albert Chin, A. D. Trigg, S. Biesemans, G. Q. Lo, D. L. KwongAbstract:In this work, lanthanum-incorporated Refractory Metal nitride is investigated as an n-type Metal gate electrode with tunable work function. By adding La into HfN Metal gate deposited on SiO2 gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. The authors also report the effective work function of TaN can be tuned to p-type with the incorporation of Al based on our findings, we propose a feasible integration process for dual Metal gate CMOS technology
