Resistors

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Xiaoyan Zeng - One of the best experts on this subject based on the ideXlab platform.

  • Study on thick film resistor and electrode fabricated by laser micro-cladding electronic pastes
    Surface and Coatings Technology, 2006
    Co-Authors: Xiaoyan Zeng
    Abstract:

    Nowadays, electronic devices are required to be smaller, to have a high-density integration and to be of lower cost. In order to meet the developing demands, some new techniques have appeared in recent years. In this paper, a technique named laser micro-cladding electronic pastes is used to fabricate the thick film resistor and electrode units on insulator substrates without using a mask. The results demonstrate that the high-quality Resistors could be fabricated by laser micro-cladding. However, the processing steps are very important since they have significant effects on the surface finish, the extent of diffusion between electrode film and resistor film, and on the reliability of the Resistors. Laser micro-cladding electronic pastes may become a novel technique to fabricate high quality conductive lines (electrodes) and Resistors with good properties that will come into industrial application in the future.

Fang-min Shieh - One of the best experts on this subject based on the ideXlab platform.

  • Processing of LTCC with embedded RuO2-based Resistors
    Materials Chemistry and Physics, 2003
    Co-Authors: Chi-shiung Hsi, De-fuang Chen, Fang-min Shieh
    Abstract:

    Abstract A commercial resistor was embedded in calcium boron silicate glass-ceramic and glass-ceramic+SiO 2 substrates. The microstructure of the resistor/substrate interface had been investigated using scanning and transmission electron microscopy (SEM and TEM), and its correlation to the overall resistance had been discussed. Formations of second phases were examined by X-ray diffractometry (XRD) and electron diffraction. Due to interactions between resistor films and substrates, second phases and conductive particles flocculation were observed in the resistor layers. Cristobalite phase formed in the glass-ceramic substrate and at interface between the resistor and substrate. Very few second phases, such as wollastonite (CaSiO 3 ), CaB 2 O 4 , and quartz (SiO 2 ) crystals, were formed in the Resistors under TEM observation when sintered at temperature of 850 °C. Conductive particles in the resistor film flocculated and became clusters with size of ∼200 nm. Sedimentation of clusters and glass migration to substrate layer increased the conductive cluster volume fraction. Volume fraction of conductive clusters of the embedded Resistors was the major factor to determine the resistivity of the films. Resistor film with high conductive cluster volume fraction had lower resistivity comparing with a low conductive cluster volume fraction film. Due to high volume fraction of conductive cluster, the resistivities of resistor films were not affected by the second phases formed in the Resistors.

Nedjeljko Lekic - One of the best experts on this subject based on the ideXlab platform.

  • Binary Weighted DAC with 2-ξ Resistor Ratio
    Spolecnost pro radioelektronicke inzenyrstvi, 2018
    Co-Authors: Nedjeljko Lekic, R. Dragovic-ivanovic, Zoran Mijanovic, Lj. Stankovic
    Abstract:

    In this paper we present a new digital analog converter (DAC) design, based on the binary weighted resistor network. The proposed design ensures high conversion accuracy using low precision Resistors with ±1% ±2%, ±5%, ±10% and ±20% resistor tolerance. High accuracy is achieved due to better coverage of the analog domain of the transfer characteristic. In binary weighted converters the imprecision of Resistors introduces positive and negative differential nonlinearities (DNL). Positive DNL causes gap in the analog domain of the transfer characteristic and negative DNL causes non-monotonicity. In the proposed solution we change the resistor ratio of the two consecutive DAC branches from 2 to 2-ξ, where ξ is small positive number. With this change, we intentionally introduce an additional negative DNL in order to entirely avoid the positive gap. Simulation results confirm that even with Resistors tolerance of up to ±10%, we can achieve a converter with maximal gap in the transfer characteristic less than or around one LSB

  • Optimal resistor ratio in the DAC with low precision Resistors $statistical approach
    9th International Conference on Electronics Circuits and Systems, 2002
    Co-Authors: R. Dragovic-ivanovic, Zoran Mijanovic, L Jubisa Stankovic, Nedjeljko Lekic
    Abstract:

    The widely used digital-analog converter is the one with 2R/R ladder circuit. It can be easy realized as an integrated circuit, but accurate input-output characteristic require extremely precise Resistors. With the laser trimming technology it is possible to improve converter accuracy, but aging and environmental factors decrease linearity and overall accuracy of a converter, thus reducing the usable life and the converter applicability. We propose a new DAC design based on 2R/sup +//R ladder circuit, where a high precision is obtained due to better coverage of analog range at the transfer characteristic (even for low precision Resistors, ex. 1%, 2% and 5% resistor tolerance). Statistical method shows that various allowed tolerances of the circuit Resistors are associated with various optimal resistor ratios in an 2R/sup +//R circuit.

  • ICECS - Optimal resistor ratio in the DAC with low precision Resistors $statistical approach
    9th International Conference on Electronics Circuits and Systems, 1
    Co-Authors: R. Dragovic-ivanovic, Zoran Mijanovic, L Jubisa Stankovic, Nedjeljko Lekic
    Abstract:

    The widely used digital-analog converter is the one with 2R/R ladder circuit. It can be easy realized as an integrated circuit, but accurate input-output characteristic require extremely precise Resistors. With the laser trimming technology it is possible to improve converter accuracy, but aging and environmental factors decrease linearity and overall accuracy of a converter, thus reducing the usable life and the converter applicability. We propose a new DAC design based on 2R/sup +//R ladder circuit, where a high precision is obtained due to better coverage of analog range at the transfer characteristic (even for low precision Resistors, ex. 1%, 2% and 5% resistor tolerance). Statistical method shows that various allowed tolerances of the circuit Resistors are associated with various optimal resistor ratios in an 2R/sup +//R circuit.

Sheng-fu Tsai - One of the best experts on this subject based on the ideXlab platform.

  • Temperature-dependent characteristics of polysilicon and diffused Resistors
    IEEE Transactions on Electron Devices, 2003
    Co-Authors: Hung-ming Chuang, Kong-beng Thei, Sheng-fu Tsai
    Abstract:

    The temperature-dependent characteristics of polysilicon and diffused Resistors have been studied. By using 0.18-/spl mu/m CMOS technology, a cobalt salicide process is employed and silicide is formed at the ends of Resistors. Based on a simple and useful model, some important parameters of Resistors including bulk sheet resistance (R/sub bulk/) and interface resistance (R/sub interface/) are obtained at different temperature. For diffused Resistors, the R/sub bulk/ and R/sub interface/ values increase and decrease with increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values decrease with decreasing resistor size. For polysilicon Resistors, the R/sub interface/ values decrease with increase of temperature. In addition, negative and positive TCR values of R/sub bulk/ are found in n/sup +/ and p/sup +/ polysilicon Resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon Resistors, negative trends of TCR are observed when the resistor size decreases.

Wayne A. Anderson - One of the best experts on this subject based on the ideXlab platform.

  • Thin Film Resistors
    Wiley Encyclopedia of Electrical and Electronics Engineering, 1999
    Co-Authors: F. M. Collins, Wayne A. Anderson
    Abstract:

    The sections in this article are 1 Historical Development 2 Design Concepts 3 Wafer-Scale Fabrication 4 Materials 5 Finished Formats 6 Performance Characteristics 7 Summary of the Advantages of Thin Film, Integrated Resistor Construction 8 Nicr Thin Film Resistors 9 Tantalum Nitride Thin Film Resistors 10 Ruthenium Oxide Thin Film Resistors 11 Double-Layer Ruo2/Ta2N Thin Film Resistors 12 Conclusion

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