The Experts below are selected from a list of 6831 Experts worldwide ranked by ideXlab platform
W. Bahng - One of the best experts on this subject based on the ideXlab platform.
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Accurate Extraction Method of Reverse Recovery Time and Stored Charge for Ultrafast Diodes
IEEE Transactions on Power Electronics, 2012Co-Authors: I. H. Kang, W. BahngAbstract:This letter presents a novel extraction method to accurately determine a Reverse Recovery Time and a stored charge for ultrafast diodes. To obtain this, a test circuit to measure those parameters was accurately modeled by considering an inductance and a parasitic resistance, which are inherently embedded in the test circuit and lead to oscillation. The experimental results showed that the corrected Reverse Recovery Time was reduced by 1.2 ns for an Si fast Recovery diode, while by 6.8 ns for an SiC Schottky barrier diode, compared to their measured Reverse Recovery Time.
Liu Mingguang - One of the best experts on this subject based on the ideXlab platform.
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Application and Analysis of SiC Schottky Diode in Boost Chopper DC Converter
IEEE Transactions on Power Electronics, 2011Co-Authors: Lei Haifeng, Wen Jialiang, Jin Rui, Liu MingguangAbstract:The application of SiC Schottky diode in the Boost chopper DC converter is researched in-depth.The experiment uses the ordinary Si diode and the SiC Schottky diode for comparison.Experimental results show that the SiC Schottky diode has a good dynamic performance,the Reverse Recovery current is smaller than the Si diode aver-age of about 4 Times and has good inhibitory for the IGBT turn-on current overshoot.In addition,the effect of carrier lifeTime to the diode Reverse Recovery is analyzed,simulation results show that shorten the carrier lifeTime can reduce the peak Reverse Recovery current and Reverse Recovery Time.
Azuma Shimizu - One of the best experts on this subject based on the ideXlab platform.
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High-power rectifier using the BSIT operation
IEEE Transactions on Electron Devices, 1998Co-Authors: Koji Yano, Masanobu Kasuga, I. Henmi, Azuma ShimizuAbstract:A novel high-power rectifier using the BSIT (Bipolar mode Static Induction Transistor) operation has been demonstrated. In order to improve the Reverse blocking capability of this diode, an ion implanted P-type channel structure is introduced. Device simulations have revealed that, as the tradeoff relationships between Reverse blocking voltage, forward voltage drop, and Reverse Recovery Time are considered, there exists an optimum set of the channel dosage and the channel width.
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Rectifier characteristics based on bipolar-mode SIT operation
IEEE Electron Device Letters, 1994Co-Authors: Koji Yano, M. Mitsui, H. Moroshima, J.-i. Morita, Masanobu Kasuga, Azuma ShimizuAbstract:A novel rectifier concept based on bipolar-mode static induction transistor (BSIT) operation is proposed. A numerical simulation has revealed that the turn-on mechanism of this rectifier, owing to a combination of static induction effects and minority carrier injection, can make its forward-voltage drop and Reverse Recovery Time smaller than those of the conventional p-i-n rectifier. As an example of the design methods, the simulation has clarified the effects of decreasing the doping concentration in the channel between p/sup +/ regions on improvement in the tradeoff between a forward voltage drop and leakage current. >
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A novel rectifier based on bipolar-mode SIT structure
Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95, 1Co-Authors: Koji Yano, M. Mitsui, H. Moroshima, Azuma Shimizu, Masanobu Kasuga, J.-i. MoritaAbstract:The authors propose a novel rectifier based on bipolar-mode static induction transistor (BSIT) operation. A numerical simulation has revealed that, this rectifier, which operates with a combination of static induction effects and minority carrier injection during forward conduction, exhibits a forward-voltage drop and a Reverse Recovery Time that are smaller than those of the conventional p-i-n rectifiers, and without causing excessive leakage current. It is also shown that, at temperatures below 400 K, the steady state power dissipation for the rectifier using BSIT operation is superior to that for the p-i-n rectifiers and the Schottky rectifiers.
I. H. Kang - One of the best experts on this subject based on the ideXlab platform.
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Accurate Extraction Method of Reverse Recovery Time and Stored Charge for Ultrafast Diodes
IEEE Transactions on Power Electronics, 2012Co-Authors: I. H. Kang, W. BahngAbstract:This letter presents a novel extraction method to accurately determine a Reverse Recovery Time and a stored charge for ultrafast diodes. To obtain this, a test circuit to measure those parameters was accurately modeled by considering an inductance and a parasitic resistance, which are inherently embedded in the test circuit and lead to oscillation. The experimental results showed that the corrected Reverse Recovery Time was reduced by 1.2 ns for an Si fast Recovery diode, while by 6.8 ns for an SiC Schottky barrier diode, compared to their measured Reverse Recovery Time.
Koji Yano - One of the best experts on this subject based on the ideXlab platform.
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High-power rectifier using the BSIT operation
IEEE Transactions on Electron Devices, 1998Co-Authors: Koji Yano, Masanobu Kasuga, I. Henmi, Azuma ShimizuAbstract:A novel high-power rectifier using the BSIT (Bipolar mode Static Induction Transistor) operation has been demonstrated. In order to improve the Reverse blocking capability of this diode, an ion implanted P-type channel structure is introduced. Device simulations have revealed that, as the tradeoff relationships between Reverse blocking voltage, forward voltage drop, and Reverse Recovery Time are considered, there exists an optimum set of the channel dosage and the channel width.
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Rectifier characteristics based on bipolar-mode SIT operation
IEEE Electron Device Letters, 1994Co-Authors: Koji Yano, M. Mitsui, H. Moroshima, J.-i. Morita, Masanobu Kasuga, Azuma ShimizuAbstract:A novel rectifier concept based on bipolar-mode static induction transistor (BSIT) operation is proposed. A numerical simulation has revealed that the turn-on mechanism of this rectifier, owing to a combination of static induction effects and minority carrier injection, can make its forward-voltage drop and Reverse Recovery Time smaller than those of the conventional p-i-n rectifier. As an example of the design methods, the simulation has clarified the effects of decreasing the doping concentration in the channel between p/sup +/ regions on improvement in the tradeoff between a forward voltage drop and leakage current. >
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A novel rectifier based on bipolar-mode SIT structure
Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95, 1Co-Authors: Koji Yano, M. Mitsui, H. Moroshima, Azuma Shimizu, Masanobu Kasuga, J.-i. MoritaAbstract:The authors propose a novel rectifier based on bipolar-mode static induction transistor (BSIT) operation. A numerical simulation has revealed that, this rectifier, which operates with a combination of static induction effects and minority carrier injection during forward conduction, exhibits a forward-voltage drop and a Reverse Recovery Time that are smaller than those of the conventional p-i-n rectifiers, and without causing excessive leakage current. It is also shown that, at temperatures below 400 K, the steady state power dissipation for the rectifier using BSIT operation is superior to that for the p-i-n rectifiers and the Schottky rectifiers.