The Experts below are selected from a list of 23571 Experts worldwide ranked by ideXlab platform
Dongping Zhang - One of the best experts on this subject based on the ideXlab platform.
-
Enhanced Room-Temperature thermoelectric performance of In-doped ZnO:Al thin films through prefabricated layer doping method
Electronic Materials Letters, 2015Co-Authors: Zhuanghao Zheng, Guang-xing Liang, Dongping ZhangAbstract:In this study, AZO thin films prepared by direct current reactive magnetron sputtering using a Zn-Al alloy target and In with varied content were doped through the prefabricated layer doping method in order to optimize their thermoelectric properties. The effects of In content on the Room Temperature Microstructure and thermoelectric properties of the AZO thin films were investigated. It was found that the absolute value of the Seebeck coefficient of the thin films increases stably after In doping and reaches 153 μV·K-1 when the In content is 0.71%. Though the electrical conductivity of In-doped thin films is smaller than those of the un-doped films, the power factor of the thin films shows a significant increase after In doping with a maximum value of 2.22 × 10-4 W·m-1·K-2, which is several times that of the un-doped films. Open image in new window
Zhuanghao Zheng - One of the best experts on this subject based on the ideXlab platform.
-
Enhanced Room-Temperature thermoelectric performance of In-doped ZnO:Al thin films through prefabricated layer doping method
Electronic Materials Letters, 2015Co-Authors: Zhuanghao Zheng, Guang-xing Liang, Dongping ZhangAbstract:In this study, AZO thin films prepared by direct current reactive magnetron sputtering using a Zn-Al alloy target and In with varied content were doped through the prefabricated layer doping method in order to optimize their thermoelectric properties. The effects of In content on the Room Temperature Microstructure and thermoelectric properties of the AZO thin films were investigated. It was found that the absolute value of the Seebeck coefficient of the thin films increases stably after In doping and reaches 153 μV·K-1 when the In content is 0.71%. Though the electrical conductivity of In-doped thin films is smaller than those of the un-doped films, the power factor of the thin films shows a significant increase after In doping with a maximum value of 2.22 × 10-4 W·m-1·K-2, which is several times that of the un-doped films. Open image in new window
Chaokun Hu - One of the best experts on this subject based on the ideXlab platform.
-
mechanisms for Microstructure evolution in electroplated copper thin films near Room Temperature
Journal of Applied Physics, 1999Co-Authors: James Mckell Edwin Harper, Cyril Cabral, Panayotis C. Andricacos, Lynne M. Gignac, Ismail C. Noyan, Kenneth P Rodbell, Chaokun HuAbstract:We present a model which accounts for the dramatic evolution in the Microstructure of electroplated copper thin films near Room Temperature. Microstructure evolution occurs during a transient period of hours following deposition, and includes an increase in grain size, changes in preferred crystallographic texture, and decreases in resistivity, hardness, and compressive stress. The model is based on grain boundary energy in the fine-grained as-deposited films providing the underlying energy density which drives abnormal grain growth. As the grain size increases from the as-deposited value of 0.05–0.1 μm up to several microns, the model predicts a decreasing grain boundary contribution to electron scattering which allows the resistivity to decrease by tens of a percent to near-bulk values, as is observed. Concurrently, as the volume of the dilute grain boundary regions decreases, the stress is shown to change in the tensile direction by tens of a mega pascal, consistent with the measured values. The small ...
Bi Wei-sheng - One of the best experts on this subject based on the ideXlab platform.
-
Influences of hydrogenation on Room Temperature Microstructure of Ti6Al4V alloy
Materials Science and Technology, 2005Co-Authors: Bi Wei-shengAbstract:Hydrogen is usually used as a temporary component to adjust the mechanical properties and the processing abilities of titanium alloys through modifying the Microstructure. The paper investigated the microstruc-ture of Ti6Al4V alloy after hydrogenation at solid state by OP、XRD and TEM. It was shown that the content of β phase increases with hydrogen. There are δ titanium hydride ( fcc structure, a=0. 444 nm) plates precipitated in the specimens containing hydrogen 0. 302wt% and 0. 490wt% . Simultaneously, a mass of orthorhom-bic martensite α" has been found in the specimens containing hydrogen 0. 302wt% and 0. 490wt% as well as δ hydride. However, metastable titanium hydride γ( fct structure, c/a = 1.02/1.09) has not been found. This paper presents one eutectoid transformation mechanism from βH to δ hydride and α based on diffusion transformation theory. The martensite transformation induced by hydrogen has also been discussed.
Shizuo Fujita - One of the best experts on this subject based on the ideXlab platform.
-
Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at Room Temperature with α-(GaFe)2O3
Journal of Applied Physics, 2013Co-Authors: Kentaro Kaneko, Sachio Komori, Itsuhiro Kakeya, Shizuo FujitaAbstract:Highly crystalline corundum structured α-(Ga0.42Fe0.58)2O3 alloy thin film showed magnetic properties at Room Temperature. Microstructure analysis of cross-sectional transmission electron microscope (TEM) observation and TEM energy dispersive X-ray spectroscopy measurement indicated that different crystal phase could not be detected as well as there is no remarkable phase separating area, that is, Fe and Ga ions are distributed uniformly in the film. Magnetic measurements were performed on α-(Ga1−xFex)2O3 (x = 0.24, 0.44, 0.58, 1.00) alloy thin films at 110 K. The induced magnetic moment per a Fe ion of α-(Ga0.42Fe0.58)2O3 at 5000 Oe is about 6 times larger than α-Fe2O3 thin film. Compared to the α-Fe2O3 thin films, the value of coercivity is also about 6 times in α-(Ga0.42Fe0.58)2O3, in contrast, there is no significant difference in value of coercivity of α-(Ga1−xFex)2O3 (x = 0.24, 0.44, 1.00) thin films. These means that the origin of magnetism is not the separation region of α-Fe2O3 in α-(Ga0.42Fe0.58...
