The Experts below are selected from a list of 18039 Experts worldwide ranked by ideXlab platform
M S Shur - One of the best experts on this subject based on the ideXlab platform.
-
the extrinsic compact model of the mosfet drain current based on a new interpolation expression for the transition between linear and Saturation Regimes with a monotonic decrease of the differential conductance to a nonzero value
IEEE Electron Devices Technology and Manufacturing Conference, 2020Co-Authors: Valentin O Turin, G I Zebrev, Roman Shkarlat, B Iniguez, M S ShurAbstract:Previously, we proposed a new interpolation expression to bridge the transition between the linear and the Saturation Regimes of “intrinsic” MOSFET. This approach, in contrast to the traditional one, gives a monotonic decrease of the differential conductance from the maximum value in the linear Regime to the minimum value in the Saturation Regime. Later, we proposed a linear approximation for an “extrinsic” MOSFET drain current dependence on the “extrinsic” drain bias in the Saturation Regime for not very high drain bias when nonlinear effects can be neglected. To obtain this approximation, an equation for the output differential resistance of the “extrinsic” MOSFET in Saturation Regime was obtained, that is similar to the result known from the theory of the common source MOSFET amplifier with source degeneration. In this paper, we combine these two results and present an “extrinsic” compact model for a short-channel MOSFET above threshold drain current with proper account of the differential conductance in the Saturation Regime.
-
a linear extrinsic compact model for short channel mosfet drain current asymptotic dependence on drain bias in Saturation Regime
International Conference on Micro- and Nano-Electronics 2018, 2019Co-Authors: Valentin O Turin, G I Zebrev, Roman Shkarlat, V Poyarkov, O Kshensky, B Iniguez, M S ShurAbstract:We derived the equation for the drain current of a short-channel MOSFET with nonzero differential conductance in Saturation Regime describing its nonlinear dependence on “extrinsic” drain bias and accounting for the parasitic and contact series resistances. This implicit equation could be numerically solved in the entire range of the drain biases. We have also derived the equation for the differential conductance of the “extrinsic” MOSFET in the Saturation Regime. Finally, we have proposed a linear approximation for asymptotic dependence of the “extrinsic” MOSFET drain current on “extrinsic” drain bias in Saturation Regime.
-
the correct account of nonzero differential conductance in the Saturation Regime in the mosfet compact model
International Journal of Numerical Modelling-electronic Networks Devices and Fields, 2014Co-Authors: Valentin O Turin, G I Zebrev, Sergey Makarov, Benjamin Iniguez, M S ShurAbstract:We suggest a simple and versatile approach for the correct account of differential conductance in the Saturation Regime that provides a monotonic decrease of the differential conductance from its maximum value to its minimum positive or even negative value. We present all equations also in normalized form, which simplifies the analysis and usage of the approach. On the basis of the suggested approach, we have developed 'internal' does not include source and drain resistance metal-oxide-semiconductor field-effect transistor compact model and have incorporated one into an Electronic Design Automation software Symica as Verilog-A module. Copyright © 2014 John Wiley & Sons, Ltd.
-
terahertz response of field effect transistors in Saturation Regime
Applied Physics Letters, 2011Co-Authors: T A Elkhatib, Yu V Kachorovskii, W Stillman, S L Rumyantsev, X C Zhang, M S ShurAbstract:We report on the broadband terahertz response of InGaAs/GaAs high electron mobility transistors operating at 1.63 THz and room temperature deep in the Saturation Regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain-bias current) and might reach very high values up to 170 V/W. We also develop a phenomenological theory valid both in the Ohmic and in the Saturation Regimes.
-
terahertz response of field effect transistors in Saturation Regime
arXiv: Instrumentation and Detectors, 2010Co-Authors: T A Elkhatib, Yu V Kachorovskii, W Stillman, S L Rumyantsev, X C Zhang, M S ShurAbstract:We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the Saturation Regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain bias current) and reach very high values up to 170V/W. We also develop a phenomenological theory valid both in the ohmic and in the Saturation Regimes.
Vyacheslav N. Shlyaptsev - One of the best experts on this subject based on the ideXlab platform.
-
gain Saturation Regime for laser driven tabletop transient ni like ion x ray lasers
Physical Review Letters, 2000Co-Authors: J. Dunn, J. Nilsen, J R Hunter, Albert L. Osterheld, Yuelin Li, Vyacheslav N. ShlyaptsevAbstract:We have demonstrated small signal gain Saturation on several transient-gain Ni-like ion x-ray lasers by using a high-power, chirped-pulse amplification, tabletop laser. These results have been achieved at wavelengths from 139-203 Angstrom using a total of 5-7 J energy in a traveling-wave excitation scheme. Strong amplification is also observed for Ni-like Sn at 119 Angstrom. Gain of 62 cm{sup -1} and gL product of 18 are determined on the 4d{yields}4p transition for Ni-like Pd at 147 Angstrom with an output energy of 12 {mu}J . A systematic evaluation of the laser driver parameters yields optimum beam divergence and small deflection angles of 2-5 mrads, in good agreement with simulations. (c) 2000 The American Physical Society.
-
gain Saturation Regime for laser driven tabletop transient ni like ion x ray lasers
Physical Review Letters, 2000Co-Authors: J. Dunn, J R Hunter, J. Nilsen, Albert L. Osterheld, Vyacheslav N. ShlyaptsevAbstract:We have demonstrated small signal gain Saturation on several transient-gain Ni-like ion x-ray lasers by using a high-power, chirped-pulse amplification, tabletop laser. These results have been achieved at wavelengths from 139--203 \AA{} using a total of 5--7 J energy in a traveling-wave excitation scheme. Strong amplification is also observed for Ni-like Sn at 119 \AA{}. Gain of $62{\mathrm{cm}}^{\ensuremath{-}1}$ and gL product of 18 are determined on the $4d\ensuremath{\rightarrow}4p$ transition for Ni-like Pd at 147 \AA{} with an output energy of $12\ensuremath{\mu}\mathrm{J}$. A systematic evaluation of the laser driver parameters yields optimum beam divergence and small deflection angles of 2--5 mrads, in good agreement with simulations.
David Wilkowski - One of the best experts on this subject based on the ideXlab platform.
-
resonant forward scattered field in the high Saturation Regime elastic and inelastic contributions
Physical Review A, 2020Co-Authors: Chang Chi Kwong, Thomas Wellens, Kanhaiya Pandey, David WilkowskiAbstract:We measure the resonant forward scattering of light by a highly saturated atomic medium through the flashes emitted immediately after an abrupt extinction of the probe beam. The experiment is done in a dilute Regime where the phenomena are well captured using the independent scattering approximation. Comparing our measurements to a model based on Maxwell-Bloch equations, our experimental results are consistent with contributions from only the elastic component, whereas the attenuation of the coherent transmission power is linked to the elastic and inelastic scatterings. In the large Saturation Regime and at the vicinity of the atomic resonance, we derive an asymptotic expression relating the elastic scattering power to the forward-scattered power.
J. Dunn - One of the best experts on this subject based on the ideXlab platform.
-
gain Saturation Regime for laser driven tabletop transient ni like ion x ray lasers
Physical Review Letters, 2000Co-Authors: J. Dunn, J. Nilsen, J R Hunter, Albert L. Osterheld, Yuelin Li, Vyacheslav N. ShlyaptsevAbstract:We have demonstrated small signal gain Saturation on several transient-gain Ni-like ion x-ray lasers by using a high-power, chirped-pulse amplification, tabletop laser. These results have been achieved at wavelengths from 139-203 Angstrom using a total of 5-7 J energy in a traveling-wave excitation scheme. Strong amplification is also observed for Ni-like Sn at 119 Angstrom. Gain of 62 cm{sup -1} and gL product of 18 are determined on the 4d{yields}4p transition for Ni-like Pd at 147 Angstrom with an output energy of 12 {mu}J . A systematic evaluation of the laser driver parameters yields optimum beam divergence and small deflection angles of 2-5 mrads, in good agreement with simulations. (c) 2000 The American Physical Society.
-
gain Saturation Regime for laser driven tabletop transient ni like ion x ray lasers
Physical Review Letters, 2000Co-Authors: J. Dunn, J R Hunter, J. Nilsen, Albert L. Osterheld, Vyacheslav N. ShlyaptsevAbstract:We have demonstrated small signal gain Saturation on several transient-gain Ni-like ion x-ray lasers by using a high-power, chirped-pulse amplification, tabletop laser. These results have been achieved at wavelengths from 139--203 \AA{} using a total of 5--7 J energy in a traveling-wave excitation scheme. Strong amplification is also observed for Ni-like Sn at 119 \AA{}. Gain of $62{\mathrm{cm}}^{\ensuremath{-}1}$ and gL product of 18 are determined on the $4d\ensuremath{\rightarrow}4p$ transition for Ni-like Pd at 147 \AA{} with an output energy of $12\ensuremath{\mu}\mathrm{J}$. A systematic evaluation of the laser driver parameters yields optimum beam divergence and small deflection angles of 2--5 mrads, in good agreement with simulations.
J. Nilsen - One of the best experts on this subject based on the ideXlab platform.
-
gain Saturation Regime for laser driven tabletop transient ni like ion x ray lasers
Physical Review Letters, 2000Co-Authors: J. Dunn, J. Nilsen, J R Hunter, Albert L. Osterheld, Yuelin Li, Vyacheslav N. ShlyaptsevAbstract:We have demonstrated small signal gain Saturation on several transient-gain Ni-like ion x-ray lasers by using a high-power, chirped-pulse amplification, tabletop laser. These results have been achieved at wavelengths from 139-203 Angstrom using a total of 5-7 J energy in a traveling-wave excitation scheme. Strong amplification is also observed for Ni-like Sn at 119 Angstrom. Gain of 62 cm{sup -1} and gL product of 18 are determined on the 4d{yields}4p transition for Ni-like Pd at 147 Angstrom with an output energy of 12 {mu}J . A systematic evaluation of the laser driver parameters yields optimum beam divergence and small deflection angles of 2-5 mrads, in good agreement with simulations. (c) 2000 The American Physical Society.
-
gain Saturation Regime for laser driven tabletop transient ni like ion x ray lasers
Physical Review Letters, 2000Co-Authors: J. Dunn, J R Hunter, J. Nilsen, Albert L. Osterheld, Vyacheslav N. ShlyaptsevAbstract:We have demonstrated small signal gain Saturation on several transient-gain Ni-like ion x-ray lasers by using a high-power, chirped-pulse amplification, tabletop laser. These results have been achieved at wavelengths from 139--203 \AA{} using a total of 5--7 J energy in a traveling-wave excitation scheme. Strong amplification is also observed for Ni-like Sn at 119 \AA{}. Gain of $62{\mathrm{cm}}^{\ensuremath{-}1}$ and gL product of 18 are determined on the $4d\ensuremath{\rightarrow}4p$ transition for Ni-like Pd at 147 \AA{} with an output energy of $12\ensuremath{\mu}\mathrm{J}$. A systematic evaluation of the laser driver parameters yields optimum beam divergence and small deflection angles of 2--5 mrads, in good agreement with simulations.
