The Experts below are selected from a list of 36039 Experts worldwide ranked by ideXlab platform
Montree Kumngern - One of the best experts on this subject based on the ideXlab platform.
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A vector summation circuit using DXCCIIs
2013 International Conference on Advanced Technologies for Communications (ATC 2013), 2013Co-Authors: Montree Kumngern, Supavadee KungleeAbstract:This paper presents a new analog vector summation using dual-X second-generation current conveyors (DXCCIIs) as active element. The proposed vector summation employs two DXCCIIs and seven MOS transistors operating in Saturation Region, which is suitable for integrated circuit implementation. The circuit offers the high operating frequency using MOS transistors operating in Saturation Region. PSPICE simulators using 0.35 μm TSMC CMOS process are used to validate the workability of the new circuit. The simulation results show that the circuit has a -3 dB bandwidth of 517 MHz.
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A DXCCII-based four-quadrant multiplier
2013 IEEE 7th International Power Engineering and Optimization Conference (PEOCO), 2013Co-Authors: Montree KumngernAbstract:This paper presents a four-quadrant analog multiplier using dual-X second-generation current conveyors (DXCCIIs). The proposed multiplier employs only two DXCCIIs and eight MOS transistors operating in Saturation Region, which is ideal for monolithic implementation. The use of MOS devices operating in Saturation Region offers high-frequency capability of the circuit. PSPICE simulators using 0.35 μm TSMC CMOS process are used to validate the workability of the circuit. Simulation results show that the circuit has a -3dB bandwidth of 450 MHz, 1.59 % total harmonic distortion for the input current 200 mVP-P.
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ICEEI - Voltage-controlled floating resistor using differential difference amplifier
Proceedings of the 2011 International Conference on Electrical Engineering and Informatics, 2011Co-Authors: Montree KumngernAbstract:This paper presents a new configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of MOS transistor operating in the non-Saturation Region, differential difference amplifier (DDA) and MOS voltage divider. The MOS transistor operating in the non-Saturation Region is used to configure a floating linear resistor. The DDA and the MOS transistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-Saturation Region to obtain a linear current/voltage relationship. The DDA is employed to provide a simple summer of the circuit. The resistor circuit also offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.
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Voltage-Controlled Floating Resistor Using DDCC
2011Co-Authors: Montree Kumngern, Kobchai DejhanAbstract:This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The pro- posed resistor is composed of three main components: MOS transistor operating in the non-Saturation Region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-Saturation Region is used to configure a floating linear resistor. The DDCC and the MOS tran- sistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-Saturation Region to obtain a linear current/voltage relationship. The DDCC is employed to provide a simple summer of the circuit. This circuit offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The pro- posed configuration employs only 16 MOS transistors. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.
Shigeru Okuma - One of the best experts on this subject based on the ideXlab platform.
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Novel voltage limiter for fast torque response of IPMSM in voltage Saturation Region
Electrical Engineering in Japan, 2011Co-Authors: Smith Lerdudomsak, Shinji Doki, Shigeru OkumaAbstract:A new voltage limiter for fast torque response of IPMSM in the voltage Saturation Region is proposed, which we name the “maximum torque response voltage limiter.” In transient condition, the fastest response is vital while voltage Saturation occurs. Thus, the problem is to divide the limited voltage into d- and q-axis voltages so as to generate the fastest torque response. The nonlinear relation between the torque and the d-q axis currents of the IPMSM makes the problem complicated. In our proposed method, both voltage equations and a torque equation of the IPMSM are considered and, based on the Lagrange optimization technique, explicit expressions for the d- and q-axis voltages are derived. Compared with conventional voltage limiters such as the constant phase angle method, the constant back emf method, and the constant d-axis voltage method, the proposed limiter yields faster torque response in the voltage Saturation Region, which is confirmed by computer simulation and experimental results. Furthermore, the proposed method uses simple software calculations, and it can be readily implemented without any modification of the hardware system. © 2011 Wiley Periodicals, Inc. Electr Eng Jpn, 175(4): 57–69, 2011; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/eej.21078
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Novel Voltage Limiter for Fast Torque Response of IPMSM in Voltage Saturation Region
Ieej Transactions on Industry Applications, 2008Co-Authors: Smith Lerdudomsak, Shinji Doki, Shigeru OkumaAbstract:A new voltage limiter for fast torque response of IPMSM in voltage Saturation Region is proposed, which we name “maximum torque response voltage limiter”. In transient condition, the fastest response is vital while voltage Saturation occurs. Then the problem is that how to divide the limitted voltage to d and q axis voltages for generating the fastest torque response. The nonlinear relation between torque and d-q axis currents of IPMSM makes the problem complicated.In our proposed method, both voltage equations and a torque equation of IPMSM are considered and, based on Lagrange optimization technique, the explicit expression of d and q axis voltages are derived. Compared with the conventional voltage limiter such as constant phase angle method, constant back emf. method and constant d-axis voltage method, the proposed limiter yields faster torque response in voltage Saturation Region, which is confirmed by computer simulation and experimental results. Furthermore, the proposed method uses simple software calculation, and it can be readily implemented without any modification of hardware system.
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Novel Techniques for Fast Torque Response of IPMSM Based on Space-Vector Control Method in Voltage Saturation Region
IECON 2007 - 33rd Annual Conference of the IEEE Industrial Electronics Society, 2007Co-Authors: Smith Lerdudomsak, Shinji Doki, M. Kadota, Shigeru OkumaAbstract:In this paper, we propose two new voltage calculation methods for fast torque response of IPMSM in voltage Saturation Region, which are maximum torque response method and constant current response ratio method. Compared with the usual methods, which are constant phase angle method, constant back emf method and constant d-axis voltage method, the proposed methods give faster torque response confirmed by simulation and experimental results.
Lu-qiao Qi - One of the best experts on this subject based on the ideXlab platform.
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effect of maxwell stress on a moving crack with polarization Saturation Region in ferroelectric solid
Meccanica, 2018Co-Authors: Lu-qiao QiAbstract:The focus of this work is on a generalized two-dimensional problem of a crack moving in a piezoelectric solid subjected to uniform electrical load at infinity. The novel point includes that the electric field inside the crack is taken into account when polarization Saturation Region exists. Based on the extended Stroh formalism and complex function method, explicit expressions of both the stress fields in the solid and electric fields inside the crack are derived by using semi-permeable crack model, respectively. Effect of Maxwell stress along the crack surface is investigated and the results are illustrated graphically. It is shown that the moving speed of the crack cannot exceed the lowest bulk wave speed. It is also found that the medium properties inside the crack and surrounding the ferroelectric solid at infinity directly affect the Maxwell stress, and as a result the Maxwell stresses are remarkable and cannot be ignored under different electric load.
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effect of maxwell stress on a moving crack with polarization Saturation Region in ferroelectric solid
Meccanica, 2018Co-Authors: Lu-qiao QiAbstract:The focus of this work is on a generalized two-dimensional problem of a crack moving in a piezoelectric solid subjected to uniform electrical load at infinity. The novel point includes that the electric field inside the crack is taken into account when polarization Saturation Region exists. Based on the extended Stroh formalism and complex function method, explicit expressions of both the stress fields in the solid and electric fields inside the crack are derived by using semi-permeable crack model, respectively. Effect of Maxwell stress along the crack surface is investigated and the results are illustrated graphically. It is shown that the moving speed of the crack cannot exceed the lowest bulk wave speed. It is also found that the medium properties inside the crack and surrounding the ferroelectric solid at infinity directly affect the Maxwell stress, and as a result the Maxwell stresses are remarkable and cannot be ignored under different electric load.
M C Poon - One of the best experts on this subject based on the ideXlab platform.
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approximation of the length of velocity Saturation Region in mosfet s
IEEE Transactions on Electron Devices, 1997Co-Authors: Hei Wong, M C PoonAbstract:This work presents an accurate approximation of the length of velocity Saturation Region (LVSR) based on the calculation of one-dimensional (1-D) electric field distribution near the drain Region of MOSFET's. Results show that for short-channel devices (<1 /spl mu/m), the LVSR values calculated with the new model are much smaller than the conventional approach. The new model agrees well with the MINIMOS simulation results. According to the simulation and theoretical results, the length of velocity Saturation Region increases gradually with the drain bias and channel length.
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Approximation of the length of velocity Saturation Region in MOSFET's
IEEE Transactions on Electron Devices, 1997Co-Authors: Hei Wong, M C PoonAbstract:This work presents an accurate approximation of the length of velocity Saturation Region (LVSR) based on the calculation of one-dimensional (1-D) electric field distribution near the drain Region of MOSFET's. Results show that for short-channel devices (
Smith Lerdudomsak - One of the best experts on this subject based on the ideXlab platform.
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Novel voltage limiter for fast torque response of IPMSM in voltage Saturation Region
Electrical Engineering in Japan, 2011Co-Authors: Smith Lerdudomsak, Shinji Doki, Shigeru OkumaAbstract:A new voltage limiter for fast torque response of IPMSM in the voltage Saturation Region is proposed, which we name the “maximum torque response voltage limiter.” In transient condition, the fastest response is vital while voltage Saturation occurs. Thus, the problem is to divide the limited voltage into d- and q-axis voltages so as to generate the fastest torque response. The nonlinear relation between the torque and the d-q axis currents of the IPMSM makes the problem complicated. In our proposed method, both voltage equations and a torque equation of the IPMSM are considered and, based on the Lagrange optimization technique, explicit expressions for the d- and q-axis voltages are derived. Compared with conventional voltage limiters such as the constant phase angle method, the constant back emf method, and the constant d-axis voltage method, the proposed limiter yields faster torque response in the voltage Saturation Region, which is confirmed by computer simulation and experimental results. Furthermore, the proposed method uses simple software calculations, and it can be readily implemented without any modification of the hardware system. © 2011 Wiley Periodicals, Inc. Electr Eng Jpn, 175(4): 57–69, 2011; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/eej.21078
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Novel Voltage Limiter for Fast Torque Response of IPMSM in Voltage Saturation Region
Ieej Transactions on Industry Applications, 2008Co-Authors: Smith Lerdudomsak, Shinji Doki, Shigeru OkumaAbstract:A new voltage limiter for fast torque response of IPMSM in voltage Saturation Region is proposed, which we name “maximum torque response voltage limiter”. In transient condition, the fastest response is vital while voltage Saturation occurs. Then the problem is that how to divide the limitted voltage to d and q axis voltages for generating the fastest torque response. The nonlinear relation between torque and d-q axis currents of IPMSM makes the problem complicated.In our proposed method, both voltage equations and a torque equation of IPMSM are considered and, based on Lagrange optimization technique, the explicit expression of d and q axis voltages are derived. Compared with the conventional voltage limiter such as constant phase angle method, constant back emf. method and constant d-axis voltage method, the proposed limiter yields faster torque response in voltage Saturation Region, which is confirmed by computer simulation and experimental results. Furthermore, the proposed method uses simple software calculation, and it can be readily implemented without any modification of hardware system.
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Novel Techniques for Fast Torque Response of IPMSM Based on Space-Vector Control Method in Voltage Saturation Region
IECON 2007 - 33rd Annual Conference of the IEEE Industrial Electronics Society, 2007Co-Authors: Smith Lerdudomsak, Shinji Doki, M. Kadota, Shigeru OkumaAbstract:In this paper, we propose two new voltage calculation methods for fast torque response of IPMSM in voltage Saturation Region, which are maximum torque response method and constant current response ratio method. Compared with the usual methods, which are constant phase angle method, constant back emf method and constant d-axis voltage method, the proposed methods give faster torque response confirmed by simulation and experimental results.
