Semiconducting Film

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Dong Hee Son - One of the best experts on this subject based on the ideXlab platform.

  • stretchable self healable Semiconducting polymer Film for active matrix strain sensing array
    Science Advances, 2019
    Co-Authors: Dong Hee Son, Toru Katsumata, Yeongjun Lee, Yeongin Kim, Jeffrey Lopez, Jiheong Kang, Joonsuk Park
    Abstract:

    Skin-like sensory devices should be stretchable and self-healable to meet the demands for future electronic skin applications. Despite recent notable advances in skin-inspired electronic materials, it remains challenging to confer these desired functionalities to an active semiconductor. Here, we report a strain-sensitive, stretchable, and autonomously self-healable Semiconducting Film achieved through blending of a polymer semiconductor and a self-healable elastomer, both of which are dynamically cross-linked by metal coordination. We observed that by controlling the percolation threshold of the polymer semiconductor, the blend Film became strain sensitive, with a gauge factor of 5.75 × 105 at 100% strain in a stretchable transistor. The blend Film is also highly stretchable (fracture strain, >1300%) and autonomously self-healable at room temperature. We proceed to demonstrate a fully integrated 5 × 5 stretchable active-matrix transistor sensor array capable of detecting strain distribution through surface deformation.

Howard E. Katz - One of the best experts on this subject based on the ideXlab platform.

  • Sensitive and Selective NO2 Sensing Based on Alkyl- and Alkylthio-Thiophene Polymer Conductance and Conductance Ratio Changes from Differential Chemical Doping
    ACS Applied Materials & Interfaces, 2017
    Co-Authors: Jennifer Dailey, Tejaswini S. Kale, Kalpana Besar, Kirsten Koehler, Howard E. Katz
    Abstract:

    NO2-responsive polymer-based organic field-effect transistors (OFETs) are described, and room-temperature detection with high sensitivity entirely from the semiconductor was achieved. Two thiophene polymers, poly(bisdodecylquaterthiophene) and poly(bisdodecylthioquaterthiophene) (PQT12 and PQTS12, respectively), were used as active layers to detect a concentration at least as low as 1 ppm of NO2. The proportional on-current change of OFETs using these polymers reached over 400% for PQTS12, which is among the highest sensitivities reported for a NO2-responsive device based on an organic Semiconducting Film. From measurements of cyclic voltammetry and the electronic characteristics, we found that the introduction of sulfurs into the side chains induces traps in Films of the PQTS12 and also decreases domain sizes, both of which could contribute to the higher sensitivity of PQTS12 to NO2 gas compared with PQT12. The ratio of responses of PQTS12 and PQT12 is higher for exposures to lower concentrations, making...

Wei Xue - One of the best experts on this subject based on the ideXlab platform.

  • a thin Film transistor based acetylcholine sensor using self assembled carbon nanotubes and sio2 nanoparticles
    Sensors and Actuators B-chemical, 2008
    Co-Authors: Wei Xue, Tianhong Cui
    Abstract:

    Abstract A high sensitivity acetylcholine (ACh) sensor is developed using a nanomaterial-based thin-Film transistor. The device fabrication combines the “bottom-up” layer-by-layer self-assembly and the “top-down” microfabrication techniques. The transistor uses a self-assembled single-walled carbon nanotube (SWNT) multilayer as the Semiconducting Film. Silicon dioxide (SiO 2 ) nanoparticles are deposited on the substrate as the dielectric material. Acetylcholinesterase (AChE) enzyme molecules are immobilized on the surface as the sensing Film, which can induce the ACh hydrolysis reaction and release hydrogen ions to the solution. Because all the assembly steps of the multilayer Films are done in solutions at room temperature, the fabrication complexity and the process cost are dramatically reduced. The transistor-based sensor demonstrates high sensitivity for ACh sensing and shows a good linearity in the high ACh concentration range. The sensitivity, resolution, and response time of the sensor are measured as 378.2 μA/decade, 10 nM, and 15 s, respectively. This work presents a promising technique to develop disposable and high-sensitivity biosensors for a wide range of applications.

Mamatimin Abbas - One of the best experts on this subject based on the ideXlab platform.

  • exploring the critical thickness of organic semiconductor layer for enhanced piezoresistive sensitivity in field effect transistor sensors
    Materials, 2020
    Co-Authors: Damien Thuau, Katherine Begley, Rishat Dilmurat, Abduleziz Ablat, Guillaume Wantz, Cedric Ayela, Mamatimin Abbas
    Abstract:

    Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the Semiconducting Film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin Film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin Films and their corresponding piezoresistive sensitivities was discussed.

Jian Zhang - One of the best experts on this subject based on the ideXlab platform.

  • epitaxial growth of mof thin Film for modifying the dielectric layer in organic field effect transistors
    ACS Applied Materials & Interfaces, 2017
    Co-Authors: Shanci Chen, Qingdong Zheng, Jian Zhang
    Abstract:

    Metal–organic framework (MOF) thin Films are important in the application of sensors and devices. However, the application of MOF thin Films in organic field effect transistors (OFETs) is still a challenge to date. Here, we first use the MOF thin Film prepared by a liquid-phase epitaxial (LPE) approach (also called SURMOFs) to modify the SiO2 dielectric layer in the OFETs. After the semiconductive polymer of PTB7-Th (poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b:4,5-b′]dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]) was coated on MOF/SiO2 and two electrodes on the Semiconducting Film were deposited sequentially, MOF-based OFETs were fabricated successfully. By controlling the LPE cycles of SURMOF HKUST-1 (also named Cu3(BTC)2, BTC = 1,3,5-benzenetricarboxylate), the performance of the HKUST-1/SiO2-based OFETs showed high charge mobility and low threshold voltage. This first report on the application of MOF thin Film in OFETs will offer an effective approach for designing a new kind...