The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Lew Rabenberg - One of the best experts on this subject based on the ideXlab platform.
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local strain measurement in a strain engineered complementary metal oxide Semiconductor Device by geometrical phase analysis in the transmission electron microscope
Applied Physics Letters, 2008Co-Authors: Jayhoon Chung, Guoda Lian, Lew RabenbergAbstract:Local strains in the channel and source/drain (S/D) of an advanced complementary metal-oxide-Semiconductor Device were measured by the geometric phase analysis applied to high resolution transmission electron microscope images. Two-dimensional strain maps were reconstructed for a 45nm p-type metal-oxide-Semiconductor Device which was strain-engineered using a recessed Si0.82Ge0.18 S/D. Lateral strains were uniform across the channel but vertical strains were found to vary considerably in the channel. Measured strains were used to estimate stresses and hole mobility enhancements.
C.l. Gardner - One of the best experts on this subject based on the ideXlab platform.
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Numerical simulation of a steady-state electron shock wave in a submicrometer Semiconductor Device
IEEE Transactions on Electron Devices, 1991Co-Authors: C.l. GardnerAbstract:Appropriate numerical methods for steady-state simulations (including shock waves) when the electron flow is both subsonic and supersonic are addressed. The one-dimensional steady-state hydrodynamic equations will then be elliptic in the subsonic regions and hyperbolic/elliptic in the supersonic regions. A second upwind method is used for both elliptic and hyperbolic/elliptic regions. In the elliptic regions, the second upwind method is related to the Scharfetter-Gummell exponential fitting method. The hydrodynamic model consists of a set of nonlinear conservation laws for particle number, momentum, and energy, coupled to Poisson's equation for the electric potential. The nonlinear conservation laws are just the Euler equations of gas dynamics for a gas of charged particles in an electric field, with the addition of a heat conduction term. Thus the hydrodynamic model partial differential equations (PDEs) have hyperbolic, parabolic, and elliptic modes. The nonlinear hyperbolic modes support shock waves. The first numerical simulations of a steady-state electron shock wave in a Semiconductor Device are presented, using the hydrodynamic model. For the ballistic diode (which models the channel of a MOSFET), the shock wave is fully developed in Si (with 1-V bias) at 300 K for a 0.1- mu m channel and at 77 K for a 1.0- mu m channel.
Jiaming Shi - One of the best experts on this subject based on the ideXlab platform.
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discrete assembly backward traceability and Semiconductor Device forward traceability
2014Co-Authors: Didier Chavet, Cheeman Yu, Hem Takiar, Lu Frank, Tung Chihchiang, Jiaming ShiAbstract:The invention discloses a system for providing backward and forward traceability through a method of identifying a discrete assembly (a bare core, a substrate and/or a passive element) in a Semiconductor Device. A technology used for generating a unique identifier is further included, the unique identifier is used for marking the Semiconductor Device, and the Semiconductor Device and the discrete assembly in the Device can be tracked and retrospected under the condition of each process and test in the process of producing the Semiconductor Device.
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discrete component backward traceability and Semiconductor Device forward traceability
2010Co-Authors: Didier Chavet, Cheeman Yu, Hem Takiar, Frank Lu, Chihchiang Tung, Jiaming ShiAbstract:A system is disclosed for providing backward and forward traceability by a methodology which identifies discrete components (die, substrate and/or passives) that are included in a Semiconductor Device. The present technology further includes a system for generating a unique identifier and marking a Semiconductor Device with the unique identifier enabling the Semiconductor Device, and the discrete components within that Device, to be tracked and traced through each process and test in the production of the Semiconductor Device.
Jayhoon Chung - One of the best experts on this subject based on the ideXlab platform.
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local strain measurement in a strain engineered complementary metal oxide Semiconductor Device by geometrical phase analysis in the transmission electron microscope
Applied Physics Letters, 2008Co-Authors: Jayhoon Chung, Guoda Lian, Lew RabenbergAbstract:Local strains in the channel and source/drain (S/D) of an advanced complementary metal-oxide-Semiconductor Device were measured by the geometric phase analysis applied to high resolution transmission electron microscope images. Two-dimensional strain maps were reconstructed for a 45nm p-type metal-oxide-Semiconductor Device which was strain-engineered using a recessed Si0.82Ge0.18 S/D. Lateral strains were uniform across the channel but vertical strains were found to vary considerably in the channel. Measured strains were used to estimate stresses and hole mobility enhancements.
Didier Chavet - One of the best experts on this subject based on the ideXlab platform.
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discrete assembly backward traceability and Semiconductor Device forward traceability
2014Co-Authors: Didier Chavet, Cheeman Yu, Hem Takiar, Lu Frank, Tung Chihchiang, Jiaming ShiAbstract:The invention discloses a system for providing backward and forward traceability through a method of identifying a discrete assembly (a bare core, a substrate and/or a passive element) in a Semiconductor Device. A technology used for generating a unique identifier is further included, the unique identifier is used for marking the Semiconductor Device, and the Semiconductor Device and the discrete assembly in the Device can be tracked and retrospected under the condition of each process and test in the process of producing the Semiconductor Device.
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discrete component backward traceability and Semiconductor Device forward traceability
2010Co-Authors: Didier Chavet, Cheeman Yu, Hem Takiar, Frank Lu, Chihchiang Tung, Jiaming ShiAbstract:A system is disclosed for providing backward and forward traceability by a methodology which identifies discrete components (die, substrate and/or passives) that are included in a Semiconductor Device. The present technology further includes a system for generating a unique identifier and marking a Semiconductor Device with the unique identifier enabling the Semiconductor Device, and the discrete components within that Device, to be tracked and traced through each process and test in the production of the Semiconductor Device.
