The Experts below are selected from a list of 17079 Experts worldwide ranked by ideXlab platform
Dago M De Leeuw - One of the best experts on this subject based on the ideXlab platform.
-
origin of the drain current bistability in polymer ferroelectric field effect transistors
Applied Physics Letters, 2007Co-Authors: R C G Naber, Paul W M Blom, J Massolt, Markjan Spijkman, Kamal Asadi, Dago M De LeeuwAbstract:The authors present measurements that elucidate the mechanism behind the observed drain current bistability in ferroelectric field-effect transistors based on the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) as the gate dielectric. Capacitance-voltage measurements on metal-insulator-Semiconductor Diodes demonstrate that the bistability originates from switching between two states in which the ferroelectric gate dielectric is either polarized or depolarized. Pulsed charge displacement measurements on these Diodes enable a direct measurement of the accumulated charge in the polarized state of 40±3mC∕m2.
-
photoimpedance spectroscopy of poly 3 hexyl thiophene metal insulator Semiconductor Diodes
Synthetic Metals, 2003Co-Authors: E J Meijer, A V G Mangnus, Dago M De Leeuw, Barthendrik Huisman, G W T Hooft, T M KlapwijkAbstract:Abstract Capacitance–voltage (C–V) characteristics of metal–insulator–Semiconductor (MIS) Diodes with poly(3-hexylthiophene) (P3HT) as p-type Semiconductor were investigated as function of time, ambient, and illumination. P3HT is only stable under illumination with light in vacuum, while in the presence of oxygen it needs to be placed in the dark. P3HT is rapidly doped upon exposure to both oxygen and light. Temporal changes in acceptor density profiles were determined by using Mott–Schottky analysis of the capacitance–voltage (C−V) characteristics. The profiles were determined to be constant over the P3HT film thickness. Wavelength dependent photoimpedance measurements show that the acceptor creation efficiency peaks upon excitation of the molecular oxygen–polythiophene contact charge transfer complex at (1.9±0.1) eV.
-
frequency behavior and the mott schottky analysis in poly 3 hexyl thiophene metal insulator Semiconductor Diodes
Applied Physics Letters, 2001Co-Authors: E J Meijer, A V G Mangnus, Cornelis Maria Hart, Dago M De Leeuw, T M KlapwijkAbstract:Metal–insulator–Semiconductor Diodes with poly(3-hexyl thiophene) as the Semiconductor were characterized with impedance spectroscopy as a function of bias, frequency, and temperature. We show that the standard Mott–Schottky analysis gives unrealistic values for the dopant density in the Semiconductor. From modeling of the data, we find that this is caused by the relaxation time of the Semiconductor, which increases rapidly with decreasing temperature due to the thermally activated conductivity of the poly(3-hexyl thiophene).
T M Klapwijk - One of the best experts on this subject based on the ideXlab platform.
-
photoimpedance spectroscopy of poly 3 hexyl thiophene metal insulator Semiconductor Diodes
Synthetic Metals, 2003Co-Authors: E J Meijer, A V G Mangnus, Dago M De Leeuw, Barthendrik Huisman, G W T Hooft, T M KlapwijkAbstract:Abstract Capacitance–voltage (C–V) characteristics of metal–insulator–Semiconductor (MIS) Diodes with poly(3-hexylthiophene) (P3HT) as p-type Semiconductor were investigated as function of time, ambient, and illumination. P3HT is only stable under illumination with light in vacuum, while in the presence of oxygen it needs to be placed in the dark. P3HT is rapidly doped upon exposure to both oxygen and light. Temporal changes in acceptor density profiles were determined by using Mott–Schottky analysis of the capacitance–voltage (C−V) characteristics. The profiles were determined to be constant over the P3HT film thickness. Wavelength dependent photoimpedance measurements show that the acceptor creation efficiency peaks upon excitation of the molecular oxygen–polythiophene contact charge transfer complex at (1.9±0.1) eV.
-
frequency behavior and the mott schottky analysis in poly 3 hexyl thiophene metal insulator Semiconductor Diodes
Applied Physics Letters, 2001Co-Authors: E J Meijer, A V G Mangnus, Cornelis Maria Hart, Dago M De Leeuw, T M KlapwijkAbstract:Metal–insulator–Semiconductor Diodes with poly(3-hexyl thiophene) as the Semiconductor were characterized with impedance spectroscopy as a function of bias, frequency, and temperature. We show that the standard Mott–Schottky analysis gives unrealistic values for the dopant density in the Semiconductor. From modeling of the data, we find that this is caused by the relaxation time of the Semiconductor, which increases rapidly with decreasing temperature due to the thermally activated conductivity of the poly(3-hexyl thiophene).
Paul W M Blom - One of the best experts on this subject based on the ideXlab platform.
-
Diffusion-driven currents in organic-Semiconductor Diodes
NPG Asia Materials, 2014Co-Authors: Gertjan A H Wetzelaer, Paul W M BlomAbstract:Detailed knowledge of both drift and diffusion carrier transport processes is essential for the development of organic optoelectronics. Gert-Jan Wetzelaer from the University of Groningen in the Netherlands and Paul Blom from the Max Planck Institute for Polymer Research in Germany review diffusion-driven currents in organic light-emitting Diodes (OLEDs) and organic photovoltaic Diodes. The ideality factor—a measure of the current density-voltage slope characteristic that is equal to one for devices with ideal diode behavior—is a useful tool for studying carrier transport and recombination mechanisms in such devices, and the authors propose an analytical approach to describe the effect of device structure on diffusion current and ideality factor. In OLEDs, for example, trap-assisted recombination of charge carriers can result in a current ideality factor equal to two, whereas the ideality factor of the bimolecular light output approaches one. Organic light-emitting and photovoltaic Diodes are attractive optoelectronic devices with organic Semiconductors as the main component. Whereas the transport properties in the drift regime of such Diodes have been extensively investigated, the diffusion-dominated regime has only lately attracted considerable attention. In this review, we discuss diffusion-driven currents in several types of organic Diodes. It is demonstrated that the ideality factor of diffusion-driven currents can be regarded as an effective tool for studying the recombination mechanisms in organic light-emitting Diodes (OLEDs) and solar cells. In double-carrier devices, such as OLEDs, the ideality factor of the current has a temperature-independent value of 2, which indicates that nonradiative trap-assisted recombination dominates the current. By contrast, the ideality factor of the light output approaches unity, indicating that luminescence is governed by bimolecular recombination. In a single-carrier device, in which recombination is absent, the ideality factor may deviate from unity because of a small number of deeply trapped carriers. Therefore, the ideality factor of a bulk-heterojunction solar cell can deviate from unity even in the absence of trap-assisted recombination. Finally, an analytical description of the diffusion current is derived that can be used to extract contact barriers and can explain slight deviations of the ideality from unity. In this review, we discuss diffusion-driven currents in several types of organic-Semiconductor Diodes, including light-emitting Diodes, solar cells and single-carrier devices. It is demonstrated that the ideality factor of the current and photon emission contains important information about charge transport and recombination in such devices. Most importantly, the effects of charge trapping and trap-assisted recombination can be explored. An analytical model is derived for diffusion-driven currents, which can explain the current–voltage behavior of organic Diodes and allows determination of the injection barriers and built-in voltages.
-
diffusion driven currents in organic Semiconductor Diodes
Npg Asia Materials, 2014Co-Authors: Gertjan A H Wetzelaer, Paul W M BlomAbstract:Detailed knowledge of both drift and diffusion carrier transport processes is essential for the development of organic optoelectronics. Gert-Jan Wetzelaer from the University of Groningen in the Netherlands and Paul Blom from the Max Planck Institute for Polymer Research in Germany review diffusion-driven currents in organic light-emitting Diodes (OLEDs) and organic photovoltaic Diodes. The ideality factor—a measure of the current density-voltage slope characteristic that is equal to one for devices with ideal diode behavior—is a useful tool for studying carrier transport and recombination mechanisms in such devices, and the authors propose an analytical approach to describe the effect of device structure on diffusion current and ideality factor. In OLEDs, for example, trap-assisted recombination of charge carriers can result in a current ideality factor equal to two, whereas the ideality factor of the bimolecular light output approaches one.
-
origin of the drain current bistability in polymer ferroelectric field effect transistors
Applied Physics Letters, 2007Co-Authors: R C G Naber, Paul W M Blom, J Massolt, Markjan Spijkman, Kamal Asadi, Dago M De LeeuwAbstract:The authors present measurements that elucidate the mechanism behind the observed drain current bistability in ferroelectric field-effect transistors based on the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) as the gate dielectric. Capacitance-voltage measurements on metal-insulator-Semiconductor Diodes demonstrate that the bistability originates from switching between two states in which the ferroelectric gate dielectric is either polarized or depolarized. Pulsed charge displacement measurements on these Diodes enable a direct measurement of the accumulated charge in the polarized state of 40±3mC∕m2.
E J Meijer - One of the best experts on this subject based on the ideXlab platform.
-
photoimpedance spectroscopy of poly 3 hexyl thiophene metal insulator Semiconductor Diodes
Synthetic Metals, 2003Co-Authors: E J Meijer, A V G Mangnus, Dago M De Leeuw, Barthendrik Huisman, G W T Hooft, T M KlapwijkAbstract:Abstract Capacitance–voltage (C–V) characteristics of metal–insulator–Semiconductor (MIS) Diodes with poly(3-hexylthiophene) (P3HT) as p-type Semiconductor were investigated as function of time, ambient, and illumination. P3HT is only stable under illumination with light in vacuum, while in the presence of oxygen it needs to be placed in the dark. P3HT is rapidly doped upon exposure to both oxygen and light. Temporal changes in acceptor density profiles were determined by using Mott–Schottky analysis of the capacitance–voltage (C−V) characteristics. The profiles were determined to be constant over the P3HT film thickness. Wavelength dependent photoimpedance measurements show that the acceptor creation efficiency peaks upon excitation of the molecular oxygen–polythiophene contact charge transfer complex at (1.9±0.1) eV.
-
frequency behavior and the mott schottky analysis in poly 3 hexyl thiophene metal insulator Semiconductor Diodes
Applied Physics Letters, 2001Co-Authors: E J Meijer, A V G Mangnus, Cornelis Maria Hart, Dago M De Leeuw, T M KlapwijkAbstract:Metal–insulator–Semiconductor Diodes with poly(3-hexyl thiophene) as the Semiconductor were characterized with impedance spectroscopy as a function of bias, frequency, and temperature. We show that the standard Mott–Schottky analysis gives unrealistic values for the dopant density in the Semiconductor. From modeling of the data, we find that this is caused by the relaxation time of the Semiconductor, which increases rapidly with decreasing temperature due to the thermally activated conductivity of the poly(3-hexyl thiophene).
Martijn Kemerink - One of the best experts on this subject based on the ideXlab platform.
-
automated open source software for charge transport analysis in single carrier organic Semiconductor Diodes
Organic Electronics, 2018Co-Authors: Nikolaos Felekidis, Armantas Melianas, Martijn KemerinkAbstract:Organic electronics is an emerging technology with numerous applications in which the active layer is composed of an organic Semiconductor (OSC) or blends of multiple OSC. One of the key performanc ...
