The Experts below are selected from a list of 78483 Experts worldwide ranked by ideXlab platform
Suljo Linic - One of the best experts on this subject based on the ideXlab platform.
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water splitting on composite plasmonic metal Semiconductor photoelectrodes evidence for selective plasmon induced formation of charge carriers near the Semiconductor Surface
Journal of the American Chemical Society, 2011Co-Authors: David B Ingram, Suljo LinicAbstract:A critical factor limiting the rates of photocatalytic reactions, including water splitting, on oxide Semiconductors is the high rate of charge-carrier recombination. In this contribution, we demonstrate that this issue can be alleviated significantly by combining a Semiconductor photocatalyst with tailored plasmonic-metal nanostructures. Plasmonic nanostructures support the formation of resonant Surface plasmons in response to a photon flux, localizing electromagnetic energy close to their Surfaces. We present evidence that the interaction of localized electric fields with the neighboring Semiconductor allows for the selective formation of electron/hole (e−/h+) pairs in the near-Surface region of the Semiconductor. The advantage of the formation of e−/h+ pairs near the Semiconductor Surface is that these charge carriers are readily separated from each other and easily migrate to the Surface, where they can perform photocatalytic transformations.
G. P. Srivastava - One of the best experts on this subject based on the ideXlab platform.
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Theory of Semiconductor Surface reconstruction
Reports on Progress in Physics, 1997Co-Authors: G. P. SrivastavaAbstract:We present a review of Semiconductor Surface reconstruction. Experimental and theoretical results on atomic geometry, electronic states, phonon modes, and bonding are presented for clean cleaved, clean epitaxially grown, overlayer covered, surfactant mediated epitaxially grown, and defect induced reconstructed Semiconductor Surfaces. Energetic aspects of reconstructions are discussed using empirical as well as first-principles theoretical approaches.
Andrea Giugni - One of the best experts on this subject based on the ideXlab platform.
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hot electron nanoscopy using adiabatic compression of Surface plasmons
Nature Nanotechnology, 2013Co-Authors: Andrea Giugni, Bruno Torre, Andrea Toma, M Francardi, Mario Malerba, Alessandro Alabastri, Proietti R Zaccaria, Mark I StockmanAbstract:Surface plasmons are adiabatically focused at the interface between a metallic nanotip and a Semiconductor Surface to establish a new type of nanoscopy using hot electrons.
Masayoshi Tonouchi - One of the best experts on this subject based on the ideXlab platform.
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Angular dependence of terahertz emission from Semiconductor Surfaces photoexcited by femtosecond optical pulses
Journal of the Optical Society of America B, 2009Co-Authors: Ryotaro Inoue, K. Takayama, Masayoshi TonouchiAbstract:In this paper, the angular dependence of terahertz (THz) emission from Semiconductor Surfaces photoexcited by femtosecond optical pulses is reported. Time-domain waveforms of THz emission from (100) Surfaces of semi-insulating gallium arsenide (si-GaAs) and p-type indium arsenide (p-InAs) are measured at various angles after careful suppression of the nonlinear optical rectification effect. THz emission angle-frequency patterns under focusing conditions of the excitation beam are regarded as radiation from an electric dipole moment located on the Semiconductor Surface. Based on the experimental results in the magnetic field parallel to the Semiconductor Surface, we discuss the ultrafast carrier dynamics on the Surfaces of both Semiconductors.
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excitation wavelength dependence of terahertz emission from Semiconductor Surface
Applied Physics Letters, 2006Co-Authors: Masato Suzuki, Masayoshi Tonouchi, Kenichi Fujii, Hideyuki Ohtake, Tomoya HirosumiAbstract:The authors have measured terahertz radiation from InSb, InAs, and InGaAs excited by femtosecond optical pulses at wavelengths of 1560, 1050, and 780nm. The amplitude of the terahertz field strongly depends on the pump wavelengths. Among the materials, the InSb emitter shows the largest terahertz emission amplitude at high power 1560nm excitation, whereas 780nm excitation provides the weakest. With increasing photon energy, the increase in emission amplitude from InAs is less as compared to that from InGaAs. The decrease from InSb and InAs originates in low mobilities of L or X valley carriers generated by intervalley scatterings.
M. Tani - One of the best experts on this subject based on the ideXlab platform.
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Strong interference enhancement of terahertz emission from a photoexcited Semiconductor Surface
Optics express, 2010Co-Authors: Michael I. Bakunov, R V Mikhaylovskiy, M. TaniAbstract:To enhance terahertz emission from an optically excited Semiconductor Surface, we propose to sandwich a thin (as compared to the terahertz wavelength) Semiconductor layer between a dielectric hyperhemispherical lens and metal substrate. The layer is excited through the lens. The substrate provides constructive interference of terahertz waves emitted to the lens directly from the layer and reflected by the substrate. The lens outcouples terahertz radiation into free space. For InAs layer sandwiched between MgO (or sapphire) lens and metal substrate, our theory predicts order of magnitude increase in the terahertz yield as compared to the previous schemes of terahertz emission from Semiconductor Surfaces.
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A structure for enhanced terahertz emission from a photoexcited Semiconductor Surface
Applied Physics B, 2010Co-Authors: Michael I. Bakunov, M. Tani, R V Mikhaylovskiy, C. T. QueAbstract:A structure that can provide enhancement of terahertz emission from a Semiconductor Surface excited with femtosecond laser pulses is proposed. The structure consists of a Semiconductor layer on a Si substrate with metal coating on the upper Surface of the layer and a Si lens attached to the bottom of the substrate. The Semiconductor is excited through a hole in the coating and emits terahertz radiation through the substrate lens. We demonstrate theoretically that the proposed structure can increase the terahertz yield by orders of magnitude as compared to the previously used schemes of terahertz emission from a Semiconductor Surface.
