The Experts below are selected from a list of 267 Experts worldwide ranked by ideXlab platform
Suman Datta - One of the best experts on this subject based on the ideXlab platform.
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Connecting spectral techniques for graph coloring and eigen properties of coupled dynamics: A pathway for solving combinatorial optimizations (Invited paper)
2017 IEEE ACM International Conference on Computer-Aided Design (ICCAD), 2017Co-Authors: Abhinav Parihar, Suman Datta, Nikhil Shukla, Matthew Jerry, Arijit RaychowdhuryAbstract:This paper reviews an analog circuit system of capacitively coupled relaxation oscillators whose time evolution can be used to solve the graph coloring problem. These oscillators consist of a Series Combination of an insulator-metal-transition (IMT) device and a resistance. Such circuits were also demonstrated experimentally using VO2 (Vanadium Dioxide) as the phase transition material. The time evolution of circuit dynamics depend on eigenvectors of the adjacency matrix in the same way as is used by spectral algorithms for graph coloring. As such, a coupled network of such oscillators with piecewise linear dynamics have steady state phases which can be used to approximate the minimum vertex coloring of a graph.
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Revisiting the Theory of Ferroelectric Negative Capacitance
IEEE Transactions on Electron Devices, 2016Co-Authors: Kausik Majumdar, Suman DattaAbstract:In this paper, we revisit the theory of negative capacitance in: 1) a standalone ferroelectric; 2) a ferroelectric-dielectric; and 3) a ferroelectric-semiconductor Series Combination, and show that it is important to minimize the total Gibbs free energy of the combined system (and not just the free energy of the ferroelectric) to obtain the correct states. The theory is explained both analytically and using numerical simulation, for ferroelectric materials with the first-order and second-order phase transitions. The exact conditions for different regimes of operation in terms of hysteresis and gain are derived for ferroelectric-dielectric Combination. Finally, the ferroelectric-semiconductor Series Combination is analyzed to gain insights into the possibility of realization of steep slope transistors in a hysteresis-free manner.
K.b. Ariyur - One of the best experts on this subject based on the ideXlab platform.
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Extremum seeking control for discrete-time systems
IEEE Transactions on Automatic Control, 2002Co-Authors: Joon-young Choi, M. Krstic, K.b. AriyurAbstract:We present an extremum seeking control algorithm for discrete-time systems applied to a class of plants that are represented as a Series Combination of a linear input dynamics, a static nonlinearity with an extremum, and a linear output dynamics. By using the two-time scale averaging theory, we derive a mild sufficient condition under which the plant output exponentially converges to an O(/spl alpha//sup 2/) neighborhood of the extremum value, where /spl alpha/ is the magnitude of modulation signal. The sufficient condition is related to positive realness of linear parts of the plant but only at the modulation frequency. The algorithm is illustrated with a brief simulation study.
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Stability of extremum seeking control for a class of discrete-time systems
Proceedings of the 40th IEEE Conference on Decision and Control (Cat. No.01CH37228), 2001Co-Authors: Joon-young Choi, M. Krstic, K.b. AriyurAbstract:We present an extremum seeking control algorithm for discrete-time systems applied to a class of plants that are represented as a Series Combination of a linear input dynamics, a static nonlinearity with an extremum, and a linear output dynamics. By using the two-time scale averaging theory, we derive a mild sufficient condition under which the plant output exponentially converges to an O(/spl alpha//sup 2/) neighborhood of the extremum value, where /spl alpha/ is the magnitude of modulation signal. The sufficient condition is related to positive realness of linear parts of the plant but only at the modulation frequency. The algorithm is illustrated with a brief simulation study.
H.t. Yuan - One of the best experts on this subject based on the ideXlab platform.
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Vertical integration of structured resonant tunneling diodes on InP for multi-valued memory applications
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics Optical Multiple Access Networks Integrated Optoelectronics an, 1992Co-Authors: A.c. Seabaugh, H.t. YuanAbstract:The authors report vertical integration of AlAs/InGaAs/InAs/InGaAs/AlAs resonant tunneling diode (RTD) structures on InP; as many as 15 have been grown in Series Combination. They show that hysteresis in the current-voltage characteristics caused by Series resistance can be reduced by doping the resonant tunneling double barrier structures, and further reduction in hysteresis is possible through structural modifications. The doped RTDs have reduced resonance voltage with approximately equal peak spacings and good peak-to-valley ratios. Using an FET as a constant current load with an 8-peak vertically integrated RTD device, a nine-state multivalued memory is demonstrated.
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Nine-state resonant tunneling diode memory
IEEE Electron Device Letters, 1992Co-Authors: A.c. Seabaugh, H.t. YuanAbstract:The authors demonstrate an epitaxial Series Combination of eight pseudomorphic AlAs/In/sub 0.53/Ga/sub 0.47/As/InAs resonant tunneling diodes (RTDs) grown by molecular beam epitaxy on InP. This Series RTD produces an eight-peak multiple negative differential resistance characteristic with a peak-to-valley current ratio (PVR) exceeding 2 per peak at a peak current density of approximately 6 kA/cm/sup 2/. Hysteresis in the current-voltage characteristic is reduced by uniformly Si doping the double-barrier resonant tunneling region at a density of 5*10/sup 16/ cm/sup -3/. Using this multiple-peak RTD in Series with a field-effect transistor load, a nine-state multivalued memory circuit is demonstrated.
Ikmo Park - One of the best experts on this subject based on the ideXlab platform.
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Microstrip Patch Array Antenna Using a Parallel and Series Combination Feed Network
2018Co-Authors: Heesu Wang, Kam Eucharist Kedze, Ikmo ParkAbstract:In this paper, we describe $\mathrm {a}4 \times 4$ microstrip patch array antenna with a high gain and low side lobe level (SLL) using a parallel and Series Combination feed network with different power distribution ratios. Several quarter-wavelength impedance transformers are connected, and the power distribution ratio is controlled by adjusting the characteristic impedance of the feed network. The optimized $4 \times 4$ microstrip patch array antenna has a $\vert \mathrm {S} _{\mathbf {11}} \vert \lt {(!{-}!)}10$ dB impedance bandwidth of 220 MHz which is a fractional bandwidth of 2.1%. At 12.5 GHz, the antenna has a gain of 18.2 dBi and SLLs of–28.0 and–26.5 dB in the x-z and y-z planes, respectively. The size of the array antenna is 100 mm $\times 100$ mm $\times 0.7874$ mm (3.5$\lambda \mathbf {o} { \times 3.5} \lambda \mathbf {o} { \times 0.028} \lambda \mathbf {o}$at 12.5 GHz).
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Microstrip Patch Array Antenna Using a Parallel and Series Combination Feed Network
2018 International Symposium on Antennas and Propagation (ISAP), 2018Co-Authors: Heesu Wang, Kam Eucharist Kedze, Ikmo ParkAbstract:In this paper, we describe a 4 × 4 microstrip patch array antenna with a high gain and low side lobe level (SLL) using a parallel and Series Combination feed network with different power distribution ratios. Several quarter-wavelength impedance transformers are connected, and the power distribution ratio is controlled by adjusting the characteristic impedance of the feed network. The optimized 4 × 4 microstrip patch array antenna has a |S11|
Ghayas Uddin Siddiqui - One of the best experts on this subject based on the ideXlab platform.
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wide range highly sensitive relative humidity sensor based on Series Combination of mos2 and pedot pss sensors array
Sensors and Actuators B-chemical, 2018Co-Authors: Ghayas Uddin Siddiqui, Memoon Sajid, Kyung Hyun ChoiAbstract:Abstract In this work, a polymeric material poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and a two dimensional material molybdenum disulfide (MoS2) 2D nanoflakes have been employed as the active layers of two separate transducers on a single substrate for the detection of relative humidity. The portion with MoS2 based active region showed high responsivity towards low humidity levels while PEDOT:PSS based portion responded well to high humidity levels. These two sensing portions were connected in a Series Combination to fabricate a single humidity sensing device capable to respond to a wide range of relative humidity with very high sensitivity. 2D MoS2 nanoflakes were obtained by aqueous exfoliation of pristine MoS2. The transducer electrode pairs were fabricated using reverse offset printing technique on a piezoelectric LiNbO3 substrate. The active thin film of MoS2 flakes was deposited by Electrohydrodynamic atomization (EHDA) while the thin film of PEDOT:PSS was deposited by SAW-EHDA hybrid system. The fabricated sensor is capable of sensing relative humidity with high sensitivity (50 kΩ/%RH or 800 Hz/%RH) in a wide range of 0%RH–80%RH. The response and recovery times are also excellent with values of 0.5 s and 0.8 s respectively. This unique approach of combining multiple transducers in a single sensing device can lead to the development of high performance sensors and can solve the current limitations of single transducer based sensing devices.
