The Experts below are selected from a list of 4386 Experts worldwide ranked by ideXlab platform
Huiyun Liu - One of the best experts on this subject based on the ideXlab platform.
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selective area intermixing of iii v quantum dot lasers grown on Silicon with two wavelength laSing emisSions
Semiconductor Science and Technology, 2019Co-Authors: Mengya Liao, Mingchu Tang, Siming Chen, A J Seeds, Huiyun LiuAbstract:The ability to tailor the bandgap of III–V compound semiconductors spatially, across the wafer is highly deSirable for monolithically integrating photonic components with multi-functions. USing rapid thermal annealing with SiO2 and TiO2 capping layers as a selective area intermixing technique, we have demonstrated selective area bandgap tuning of III–V quantum dot (QD) material on a Silicon (Si) substrate. Electrically pumped InAs/GaAs QD lasers directly grown on Si with dual-wavelength laSing emisSions of 1275 and 1313 nm have been fabricated by this technique. This result indicates that the selective area intermixing technique can potentially be used in optical integrated circuits for Si Photonics.
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inas gaas quantum dot superluminescent light emitting diode monolithically grown on a Si substrate
ACS Photonics, 2014Co-Authors: Siming Chen, Mourad Benamara, Mingchu Tang, Qi Jiang, V G Dorogan, Yuriy I Mazur, Gregory J Salamo, P M Smowton, A J Seeds, Huiyun LiuAbstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si Photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and Size relative to hybrid solutions. Although Significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-GausSian emisSion spectrum of 114 nm centered at 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. This work complements our previous demonstration of an InAs/GaAs QD laser directly grown on a Si platform and paves the way for future monolithic integration of III–V light sources required for Si Photonics.
Siming Chen - One of the best experts on this subject based on the ideXlab platform.
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selective area intermixing of iii v quantum dot lasers grown on Silicon with two wavelength laSing emisSions
Semiconductor Science and Technology, 2019Co-Authors: Mengya Liao, Mingchu Tang, Siming Chen, A J Seeds, Huiyun LiuAbstract:The ability to tailor the bandgap of III–V compound semiconductors spatially, across the wafer is highly deSirable for monolithically integrating photonic components with multi-functions. USing rapid thermal annealing with SiO2 and TiO2 capping layers as a selective area intermixing technique, we have demonstrated selective area bandgap tuning of III–V quantum dot (QD) material on a Silicon (Si) substrate. Electrically pumped InAs/GaAs QD lasers directly grown on Si with dual-wavelength laSing emisSions of 1275 and 1313 nm have been fabricated by this technique. This result indicates that the selective area intermixing technique can potentially be used in optical integrated circuits for Si Photonics.
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o band inas gaas quantum dot laser monolithically integrated on exact 0 0 1 Si substrate
Journal of Crystal Growth, 2019Co-Authors: Keshuang Li, Mingchu Tang, Mengya Liao, Huiwen Deng, Ana M Sanchez, Richard Beanland, M Martin, T Baron, Siming Chen, Jiang WuAbstract:Abstract The concept of high-efficiency, high-reliability and low-threshold electrically pumped lasers monolithically grown on Silicon has attracted great attention over the past several decades, as a promiSing on-chip optical source for Si Photonics. In this paper, we report an electrically pumped continuous-wave (CW) 1.3 µm InAs/GaAs quantum dot (QD) lasers grown on a complementary metal-oxidesemiconductor (CMOS) compatible Si exact (0 0 1) substrate with reduced GaAs buffer thickness down to ∼2 µm. A threshold current denSity (Jth) as low as ∼160 A/cm2 has been achieved at room temperature. The characteristic temperature (T0) obtained is ∼60.8 K and laser operation is observed up to 52 °C under CW mode. These results suggest that an O-band InAs/GaAs QD laser could be very promiSing to develop a monolithically integrated on-chip optical source for Si Photonics.
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inas gaas quantum dot superluminescent light emitting diode monolithically grown on a Si substrate
ACS Photonics, 2014Co-Authors: Siming Chen, Mourad Benamara, Mingchu Tang, Qi Jiang, V G Dorogan, Yuriy I Mazur, Gregory J Salamo, P M Smowton, A J Seeds, Huiyun LiuAbstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si Photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and Size relative to hybrid solutions. Although Significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-GausSian emisSion spectrum of 114 nm centered at 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. This work complements our previous demonstration of an InAs/GaAs QD laser directly grown on a Si platform and paves the way for future monolithic integration of III–V light sources required for Si Photonics.
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inas gaas quantum dot superluminescent light emitting diode monolithically grown on a Si substrate
ACS Photonics, 2014Co-Authors: Siming Chen, Mourad Benamara, Mingchu Tang, Jiang Wu, Qi Jiang, V G Dorogan, Yuriy I Mazur, Gregory J Salamo, P M Smowton, A J SeedsAbstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si Photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and Size relative to hybrid solutions. Although Significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-GausSian emisSion spectrum of 114 nm centered at ∼1255 nm wav...
A J Seeds - One of the best experts on this subject based on the ideXlab platform.
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selective area intermixing of iii v quantum dot lasers grown on Silicon with two wavelength laSing emisSions
Semiconductor Science and Technology, 2019Co-Authors: Mengya Liao, Mingchu Tang, Siming Chen, A J Seeds, Huiyun LiuAbstract:The ability to tailor the bandgap of III–V compound semiconductors spatially, across the wafer is highly deSirable for monolithically integrating photonic components with multi-functions. USing rapid thermal annealing with SiO2 and TiO2 capping layers as a selective area intermixing technique, we have demonstrated selective area bandgap tuning of III–V quantum dot (QD) material on a Silicon (Si) substrate. Electrically pumped InAs/GaAs QD lasers directly grown on Si with dual-wavelength laSing emisSions of 1275 and 1313 nm have been fabricated by this technique. This result indicates that the selective area intermixing technique can potentially be used in optical integrated circuits for Si Photonics.
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inas gaas quantum dot superluminescent light emitting diode monolithically grown on a Si substrate
ACS Photonics, 2014Co-Authors: Siming Chen, Mourad Benamara, Mingchu Tang, Qi Jiang, V G Dorogan, Yuriy I Mazur, Gregory J Salamo, P M Smowton, A J Seeds, Huiyun LiuAbstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si Photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and Size relative to hybrid solutions. Although Significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-GausSian emisSion spectrum of 114 nm centered at 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. This work complements our previous demonstration of an InAs/GaAs QD laser directly grown on a Si platform and paves the way for future monolithic integration of III–V light sources required for Si Photonics.
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inas gaas quantum dot superluminescent light emitting diode monolithically grown on a Si substrate
ACS Photonics, 2014Co-Authors: Siming Chen, Mourad Benamara, Mingchu Tang, Jiang Wu, Qi Jiang, V G Dorogan, Yuriy I Mazur, Gregory J Salamo, P M Smowton, A J SeedsAbstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si Photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and Size relative to hybrid solutions. Although Significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-GausSian emisSion spectrum of 114 nm centered at ∼1255 nm wav...
Mingchu Tang - One of the best experts on this subject based on the ideXlab platform.
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selective area intermixing of iii v quantum dot lasers grown on Silicon with two wavelength laSing emisSions
Semiconductor Science and Technology, 2019Co-Authors: Mengya Liao, Mingchu Tang, Siming Chen, A J Seeds, Huiyun LiuAbstract:The ability to tailor the bandgap of III–V compound semiconductors spatially, across the wafer is highly deSirable for monolithically integrating photonic components with multi-functions. USing rapid thermal annealing with SiO2 and TiO2 capping layers as a selective area intermixing technique, we have demonstrated selective area bandgap tuning of III–V quantum dot (QD) material on a Silicon (Si) substrate. Electrically pumped InAs/GaAs QD lasers directly grown on Si with dual-wavelength laSing emisSions of 1275 and 1313 nm have been fabricated by this technique. This result indicates that the selective area intermixing technique can potentially be used in optical integrated circuits for Si Photonics.
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o band inas gaas quantum dot laser monolithically integrated on exact 0 0 1 Si substrate
Journal of Crystal Growth, 2019Co-Authors: Keshuang Li, Mingchu Tang, Mengya Liao, Huiwen Deng, Ana M Sanchez, Richard Beanland, M Martin, T Baron, Siming Chen, Jiang WuAbstract:Abstract The concept of high-efficiency, high-reliability and low-threshold electrically pumped lasers monolithically grown on Silicon has attracted great attention over the past several decades, as a promiSing on-chip optical source for Si Photonics. In this paper, we report an electrically pumped continuous-wave (CW) 1.3 µm InAs/GaAs quantum dot (QD) lasers grown on a complementary metal-oxidesemiconductor (CMOS) compatible Si exact (0 0 1) substrate with reduced GaAs buffer thickness down to ∼2 µm. A threshold current denSity (Jth) as low as ∼160 A/cm2 has been achieved at room temperature. The characteristic temperature (T0) obtained is ∼60.8 K and laser operation is observed up to 52 °C under CW mode. These results suggest that an O-band InAs/GaAs QD laser could be very promiSing to develop a monolithically integrated on-chip optical source for Si Photonics.
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inas gaas quantum dot superluminescent light emitting diode monolithically grown on a Si substrate
ACS Photonics, 2014Co-Authors: Siming Chen, Mourad Benamara, Mingchu Tang, Qi Jiang, V G Dorogan, Yuriy I Mazur, Gregory J Salamo, P M Smowton, A J Seeds, Huiyun LiuAbstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si Photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and Size relative to hybrid solutions. Although Significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-GausSian emisSion spectrum of 114 nm centered at 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. This work complements our previous demonstration of an InAs/GaAs QD laser directly grown on a Si platform and paves the way for future monolithic integration of III–V light sources required for Si Photonics.
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inas gaas quantum dot superluminescent light emitting diode monolithically grown on a Si substrate
ACS Photonics, 2014Co-Authors: Siming Chen, Mourad Benamara, Mingchu Tang, Jiang Wu, Qi Jiang, V G Dorogan, Yuriy I Mazur, Gregory J Salamo, P M Smowton, A J SeedsAbstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si Photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and Size relative to hybrid solutions. Although Significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-GausSian emisSion spectrum of 114 nm centered at ∼1255 nm wav...
Mourad Benamara - One of the best experts on this subject based on the ideXlab platform.
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investigation of gesn strain relaxation and spontaneous compoSition gradient for low defect and high sn alloy growth
Scientific Reports, 2018Co-Authors: Wei Dou, Mourad Benamara, Aboozar Mosleh, Joe Margetis, Perry C Grant, Yiyin Zhou, Sattar Alkabi, John Tolle, Mansour MortazaviAbstract:Recent development of group-IV alloy GeSn indicates its bright future for the application of mid-infrared Si Photonics. Relaxed GeSn with high material quality and high Sn compoSition is highly deSirable to cover mid-infrared wavelength. However, its crystal growth remains a great challenge. In this work, a systematic study of GeSn strain relaxation mechanism and its effects on Sn incorporation during the material growth via chemical vapor depoSition was conducted. It was discovered that Sn incorporation into Ge lattice Sites is limited by high compresSive strain rather than historically acknowledged chemical reaction dynamics, which was also confirmed by Gibbs free energy calculation. In-depth material characterizations revealed that: (i) the generation of dislocations at Ge/GeSn interface eases the compresSive strain, which offers a favorably increased Sn incorporation; (ii) the formation of dislocation loop near Ge/GeSn interface effectively localizes defects, leading to the subsequent low-defect grown GeSn. Following the discovered growth mechanism, a world-record Sn content of 22.3% was achieved. The experiment result shows that even higher Sn content could be obtained if further continuous growth with the same recipe is conducted. This report offers an essential guidance for the growth of high quality high Sn compoSition GeSn for future GeSn based optoelectronics.
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inas gaas quantum dot superluminescent light emitting diode monolithically grown on a Si substrate
ACS Photonics, 2014Co-Authors: Siming Chen, Mourad Benamara, Mingchu Tang, Qi Jiang, V G Dorogan, Yuriy I Mazur, Gregory J Salamo, P M Smowton, A J Seeds, Huiyun LiuAbstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si Photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and Size relative to hybrid solutions. Although Significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-GausSian emisSion spectrum of 114 nm centered at 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. This work complements our previous demonstration of an InAs/GaAs QD laser directly grown on a Si platform and paves the way for future monolithic integration of III–V light sources required for Si Photonics.
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inas gaas quantum dot superluminescent light emitting diode monolithically grown on a Si substrate
ACS Photonics, 2014Co-Authors: Siming Chen, Mourad Benamara, Mingchu Tang, Jiang Wu, Qi Jiang, V G Dorogan, Yuriy I Mazur, Gregory J Salamo, P M Smowton, A J SeedsAbstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si Photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and Size relative to hybrid solutions. Although Significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III–V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III–V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-GausSian emisSion spectrum of 114 nm centered at ∼1255 nm wav...