The Experts below are selected from a list of 79482 Experts worldwide ranked by ideXlab platform
K Yamamoto - One of the best experts on this subject based on the ideXlab platform.
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influence of Silicon Wafer surface orientation on very thin oxide quality
Journal of Applied Physics, 1995Co-Authors: Tadahiro Ohmi, K Matsumoto, Katsuyuki Nakamura, K Makihara, J Takano, K YamamotoAbstract:Effects of Silicon Wafer surface orientation on very thin oxide quality were studied, testing Si(100) and (111) Wafers. It has been found that the very thin oxide quality is determined by the Silicon Wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide becomes thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased less than 10 nm, Si/SiO2 interface smoothness is maintained similar for Si(100) and (111) but SiO2/Si interface for Si(111) exhibits larger interface charges and larger threshold‐voltage shift due to hot‐electron injection than that for Si(100).
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influence of Silicon Wafer surface orientation on very thin oxide quality
Applied Physics Letters, 1993Co-Authors: Tadahiro Ohmi, K Matsumoto, Katsuyuki Nakamura, K Makihara, J Takano, K YamamotoAbstract:We studied effects of Silicon Wafer surface orientation on very thin oxide quality, testing Si(100) and (111) Wafers. It has been found that the very thin oxide structure is dominating by the Silicon Wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide gets thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased to less than 10 nm, SiO2/Si interface smoothness is maintained similar to Si(100) and (111) but the SiO2/Si interface exhibits larger interface charges and larger flatband voltage shift for Si(111) than for Si(100).
Tadahiro Ohmi - One of the best experts on this subject based on the ideXlab platform.
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influence of Silicon Wafer surface orientation on very thin oxide quality
Journal of Applied Physics, 1995Co-Authors: Tadahiro Ohmi, K Matsumoto, Katsuyuki Nakamura, K Makihara, J Takano, K YamamotoAbstract:Effects of Silicon Wafer surface orientation on very thin oxide quality were studied, testing Si(100) and (111) Wafers. It has been found that the very thin oxide quality is determined by the Silicon Wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide becomes thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased less than 10 nm, Si/SiO2 interface smoothness is maintained similar for Si(100) and (111) but SiO2/Si interface for Si(111) exhibits larger interface charges and larger threshold‐voltage shift due to hot‐electron injection than that for Si(100).
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influence of Silicon Wafer surface orientation on very thin oxide quality
Applied Physics Letters, 1993Co-Authors: Tadahiro Ohmi, K Matsumoto, Katsuyuki Nakamura, K Makihara, J Takano, K YamamotoAbstract:We studied effects of Silicon Wafer surface orientation on very thin oxide quality, testing Si(100) and (111) Wafers. It has been found that the very thin oxide structure is dominating by the Silicon Wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide gets thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased to less than 10 nm, SiO2/Si interface smoothness is maintained similar to Si(100) and (111) but the SiO2/Si interface exhibits larger interface charges and larger flatband voltage shift for Si(111) than for Si(100).
Armin G. Aberle - One of the best experts on this subject based on the ideXlab platform.
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Impact of Auger recombination parameterisations on predicting Silicon Wafer solar cell performance
Journal of Computational Electronics, 2014Co-Authors: Fa-jun Ma, Bram Hoex, Armin G. Aberle, Baochen Liao, Jia Chen, Zheren Du, Ganesh S. Samudra, Ian Marius PetersAbstract:For high-efficiency Silicon Wafer solar cells, Auger recombination is becoming one of the most important efficiency limiting factors. For this purpose it is desirable to be able to use different Auger recombination parameterisations in advanced computer simulations. In this paper we present a method to implement arbitrary Auger parameterisations in the software package Sentaurus TCAD, enabling two- and three-dimensional simulation of solar cells using different Auger parameterisations. As examples, we implemented and investigated three different Auger parameterisations (proposed by Altermatt et al., by Kerr and Cuevas, and by Richter et al.) from the literature. For verification, we simulate Auger lifetimes for different doping densities and injection levels in crystalline Silicon. The simulated Auger lifetimes are found to agree well with analytical solutions (differences less than 0.001 %). We then employ the three different Auger parameterisations for fitting measured effective lifetime curves of both $$n$$ n -type and $$p$$ p -type float-zone Silicon lifetime samples and show which models are applicable under which conditions. We further compare the difference between the three Auger parameterisations by simulating characteristics of a screen-printed aluminium local back surface field Silicon Wafer solar cell. The simulation results agree well with the characterisation results. We find that the choice of Auger parameterisation can lead to significant differences in the predicted solar cell behaviour under one-Sun illumination. We demonstrate that different Auger parameterisations may result in significant differences in the blue response, by simulating a heavily doped emitter of an aluminium local back surface field Silicon Wafer solar cell.
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a fill factor loss analysis method for Silicon Wafer solar cells
IEEE Journal of Photovoltaics, 2013Co-Authors: Ankit Khanna, Bram Hoex, Thomas Mueller, Rolf Stangl, Prabir Kanti Basu, Armin G. AberleAbstract:The fill factor of Silicon Wafer solar cells is strongly influenced by recombination currents and ohmic resistances. A practical upper limit for the fill factor of crystalline Silicon solar cells operating under low-level injection is set by recombination in the quasi-neutral bulk and at the two cell surfaces. Series resistance, shunt resistance, and additional recombination currents further lower the fill factor. For process optimization or loss analysis of solar cells, it is important to determine the influence of both ohmic and recombination loss mechanisms on the fill factor. In this paper, a method is described to quantify the loss in fill factor due to series resistance, shunt resistance, and additional recombination currents. Only the 1-Sun J-V curve, series resistance at the maximum power point, and shunt resistance need to be determined to apply the method. Application of the method is demonstrated on an 18.4% efficient inline-diffused p-type Silicon Wafer solar cell and a 21.1% efficient heterojunction n-type Silicon Wafer solar cell. Our analysis does not require J-V curve fitting to extract diode saturation current densities or ideality factor; however, the results are shown to be consistent with curve fitting results if the cell's two-diode model parameters can be unambiguously determined by curve fitting.
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Method for quantifying optical parasitic absorptance loss of glass and encapsulant materials of Silicon Wafer based photovoltaic modules
Solar Energy Materials and Solar Cells, 2012Co-Authors: Yong Sheng Khoo, Timothy M Walsh, Fei Lu, Armin G. AberleAbstract:Abstract Optical losses in a photovoltaic (PV) module consist of reflectance losses and parasitic absorptance losses in the front layers of the module. A method for quantifying the optical losses associated with the cover glass and encapsulant material of Silicon Wafer based PV modules is presented. The method involves measuring the spectral reflectance ( R ) and the external quantum efficiency (EQE) of a Silicon Wafer solar cell before and after encapsulation. The approach used is to first obtain the internal quantum efficiency (IQE) of the cell using R and EQE of the cell before encapsulation. Assuming that the IQE of the cell is not changed by the encapsulation process, the spectrally resolved parasitic absorptance loss ( A para.mod ) associated with the cover glass and the encapsulant material is calculated with the aid of EQE and R measurements of the encapsulated cell. Using this method, the optical losses (at near normal incidence) of single-cell multicrystalline Silicon Wafer PV modules with two different ethylene vinyl acetate (EVA) encapsulants (conventional and super-clear EVA) are investigated and compared. Compared to conventional EVA, the module encapsulated with super-clear EVA is found to have much lower A para.mod at short wavelengths.
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Polarisation analysis of luminescence for the characterisation of defects in Silicon Wafer solar cells
Progress in Photovoltaics, 2011Co-Authors: Matthew P. Peloso, Jen Sern Lew, Pooja Chaturvedi, Bram Hoex, Armin G. AberleAbstract:Photoluminescence and electroluminescence imaging has progressed significantly in recent years and is now routinely used to extract spatially resolved characteristics of Silicon Wafer solar cells and other electronic devices. In this paper, we report on the expansion of the luminescence imaging technique by the application of spatially resolved polarisation analysis. Luminescence imaging of Silicon Wafer solar cells is extended to yield the partial polarisation of luminescence. It is hypothesised, and then shown experimentally, that certain defects in Silicon Wafer solar cells generate strongly polarised electroluminescence. In particular, extended crystalline defects in Silicon Wafers are shown to exhibit a partial polarisation of electroluminescence as high as 60%. The linear polarisation is found to be oriented to the dislocations in the multicrystalline Silicon Wafer solar cells. The luminescence polarisation effect is discussed in relation to internal charge anisotropy of defects in Silicon Wafer solar cells. These results may be used to advance the characterisation of solar cells, to understand the electrical properties of defects in Silicon Wafer solar cells, to study the formation of defects during crystal growth, or to probe the Bloch band anisotropy at regions of a high dislocation density. Copyright © 2011 John Wiley & Sons, Ltd.
Min Gu - One of the best experts on this subject based on the ideXlab platform.
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Towards ultra-thin plasmonic Silicon Wafer solar cells with minimized efficiency loss
Scientific Reports, 2014Co-Authors: Yinan Zhang, Nicholas Stokes, Shanhui Fan, Baohua Jia, Min GuAbstract:The cost-effectiveness of market-dominating Silicon Wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the Silicon Wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of Wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the Wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current Wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner Wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin Silicon Wafer cells with plasmonic light trapping.
K Makihara - One of the best experts on this subject based on the ideXlab platform.
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influence of Silicon Wafer surface orientation on very thin oxide quality
Journal of Applied Physics, 1995Co-Authors: Tadahiro Ohmi, K Matsumoto, Katsuyuki Nakamura, K Makihara, J Takano, K YamamotoAbstract:Effects of Silicon Wafer surface orientation on very thin oxide quality were studied, testing Si(100) and (111) Wafers. It has been found that the very thin oxide quality is determined by the Silicon Wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide becomes thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased less than 10 nm, Si/SiO2 interface smoothness is maintained similar for Si(100) and (111) but SiO2/Si interface for Si(111) exhibits larger interface charges and larger threshold‐voltage shift due to hot‐electron injection than that for Si(100).
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influence of Silicon Wafer surface orientation on very thin oxide quality
Applied Physics Letters, 1993Co-Authors: Tadahiro Ohmi, K Matsumoto, Katsuyuki Nakamura, K Makihara, J Takano, K YamamotoAbstract:We studied effects of Silicon Wafer surface orientation on very thin oxide quality, testing Si(100) and (111) Wafers. It has been found that the very thin oxide structure is dominating by the Silicon Wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide gets thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased to less than 10 nm, SiO2/Si interface smoothness is maintained similar to Si(100) and (111) but the SiO2/Si interface exhibits larger interface charges and larger flatband voltage shift for Si(111) than for Si(100).