The Experts below are selected from a list of 22977 Experts worldwide ranked by ideXlab platform
Piergiorgio Rancoita - One of the best experts on this subject based on the ideXlab platform.
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particle interaction and displacement damage in silicon devices operated in radiation environments
Reports on Progress in Physics, 2007Co-Authors: Claude Leroy, Piergiorgio RancoitaAbstract:Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its Effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a Single particle (Single Event Effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) Effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation Effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.
Cecchetto Matteo - One of the best experts on this subject based on the ideXlab platform.
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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment
'Institute of Electrical and Electronics Engineers (IEEE)', 2020Co-Authors: Coronetti Andrea, Alía, Rubén Garcia, Cecchetto Matteo, Hajdas Wojtek, Söderström Daniel, Javanainen Arto, Saigné FrédéricAbstract:The pion resonance in the nuclear reaction cross section is seen to have direct impact on the Single Event Effect (SEE) cross-section of modern electronic devices. This was experimentally observed for Single Event Upsets and for Single Event Latchup. RPP (Rectangular ParallelePiped) models built to fit proton data confirm the existence of the pion SEE cross section resonance. The impact on current Radiation Hardness Assurance (RHA) Soft Error Rate (SER) predictions is however minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the High Energy Hadron equivalence approximation established for testing in mixed-field facilities.peerReviewe
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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment
'Institute of Electrical and Electronics Engineers (IEEE)', 2020Co-Authors: Coronetti Andrea, Cecchetto Matteo, García Alía Rubén, Hajdas Wojtek, Söderström Daniel, Javanainen Arto, Saigné FrédéricAbstract:The pion resonance in the nuclear reaction cross section is seen to have a direct impact on the Single-Event Effect (SEE) cross section of modern electronic devices. This was experimentally observed for Single-Event upsets and Single-Event latchup. Rectangular parallelepiped (RPP) models built to fit proton data confirm the existence of the pion SEE cross-section resonance. The impact on current radiation hardness assurance (RHA) soft error rate (SER) predictions is, however, minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the high-energy hadron equivalence approximation established for testing in mixed-field facilities
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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment
'Institute of Electrical and Electronics Engineers (IEEE)', 2020Co-Authors: Coronetti Andrea, Cecchetto Matteo, García Alía Rubén, Hajdas Wojtek, Söderström Daniel, Javanainen Arto, Saigné FrédéricAbstract:International audienceThe pion resonance in the nuclear reaction cross section is seen to have a direct impact on the Single-Event Effect (SEE) cross section of modern electronic devices. This was experimentally observed for Single-Event upsets and Single-Event latchup. Rectangular parallelepiped (RPP) models built to fit proton data confirm the existence of the pion SEE cross-section resonance. The impact on current radiation hardness assurance (RHA) soft error rate (SER) predictions is, however, minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the high-energy hadron equivalence approximation established for testing in mixed-field facilities
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Heavy Ion Nuclear Reaction Impact on SEE Testing: From Standard to Ultra-high Energies
'Institute of Electrical and Electronics Engineers (IEEE)', 2020Co-Authors: Wyrwoll Vanessa, Cecchetto Matteo, García Alía Rubén, Røed Ketil, Kastriotou Maria, Fernández-martínez Pablo, Kerboub Nourdine, Tali Maris, Cerutti FrancescoAbstract:We perform Monte Carlo (MC) simulations to describe heavy ion (HI) nuclear interactions in a broad energy range (4 MeV/n–150 GeV/n), focusing on the Single Event Effect (SEE) sub-linear energy transfer (LET) impact. Previously retrieved Single Event latch-up (SEL) experimental data have indicated that standard energy ions (~10 MeV/n) can produce high-LET secondaries through fusion reactions which are expected to strongly influence the SEE cross section in the sub-LET region. Alternatively, interactions of higher energy ions (>100 MeV/n) yield secondaries of a similar LET distribution as from the projectile, for projectile-like fragments, and high-energy proton reactions, for target-like fragments. Hence, the factor of relevance to the sub-LET SEE cross section is correlated to low-energy
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Impact of thermal and intermediate energy neutrons on the semiconductor memories for the CERN accelerators
2017Co-Authors: Cecchetto MatteoAbstract:A wide quantity of SRAM memories are employed along the Large Hadron Collider (LHC), the main CERN accelerator, and they are subjected to high levels of ionizing radiations which compromise the reliability of these devices. The Single Event Effect (SEE) qualification for components to be used in the complex high-energy accelerator at CERN relies on the characterization of two cross sections: 200-MeV protons and thermal neutrons. However, due to cost and time constraints, it is not always possible to characterize the SEE response of components to thermal neutrons, which is often regarded as negligible for components without borophosphosilicate glass (BPSG). Nevertheless, as recent studies show, the sensitivity of deep sub-micron technologies to thermal neutrons has increased owing to the presence of Boron 10 as a dopant and contact contaminant. The very large thermal neutron fluxes relative to high-energy hadron fluxes in some of the heavily shielded accelerator areas imply that even comparatively small thermal neutron sensitivities could dominate the overall Single Event Upset (SEU) rate. For instance, in some locations that host electronic devices, the thermal neutrons fluence can be up to 15 times larger than that of the high-energy hadron. For this reason, in this work I explore the option of measuring the thermal neutron sensitivity through high-energy mixed field irradiations, in conditions with different ratios between the thermal and high-energy hadron fluxes. I studied SEU and SEL SRAM cross sections using the Cern High energy AcceleRator Mixed-field (CHARM) facility, where a wide variety of accelerator environments can be reproduced by combining different test positions and shielding configurations. The mixed-field radiation environment simulated in the past with the FLUKA Monte Carlo tool was investigated in order to select a location with a large thermal neutron fluence compared with the equivalent high-energy hadron fluence. From this perspective, I selected a location with a strong contribution from thermal and intermediate energy neutrons and I characterized it, by combining FLUKA Monte Carlo simulations and the Radiation Monitor (RadMon) measurements. In order to vary the amount of thermal neutrons in the selected position, I designed and built a box of boron carbide, a material that has a high capture cross section for thermal neutrons. After preliminary FLUKA simulations to outline the spectra outgoing the boron carbide absorber, I carried out the RadMon tests-analysis with the purpose of experimentally verifying the results. The former evidences that a large portion of the neutron spectra is fully absorbed below 1 eV and partially cut until 0.01 MeV, while hardly affecting the high-energy flux. Once the neutron test-position was calibrated, I tested and studied the upset and latch-up sensitivities of different SRAM memories to thermal neutrons and high-energy hadron. This investigation was made with differential measurements using the boron carbide box as a thermal neutrons absorber. One of the tested components was the ESA SEU Monitor, an SRAM-based radiation detector employed to prove the Effectiveness of the differential approach and to assess the beam spatial uniformity. Moreover, to benchmark the cross sections results retrieved on the neutron-dominated position at CHARM, I tested the same memories in two facilities in Grenoble (France): a 14 MeV mono-energetic neutrons source and a reactor providing a thermal neutron spectrum for testing electronics. Since 14 MeV neutron beams are typically more accessible and cost-efficient than several hundred MeV protons at cyclotron facilities, this work also evaluates their possible use for deriving the saturation cross section, representative of the high-energy hadron response of candidate components. Furthermore I worked on an Americium-Beryllium neutron source at CERN to assess its possible use for SEU testing when CHARM is not available. After the calibration of the facility carried out with FLUKA simulations and ESA Monitor experimental measurements, I proved its potential employment for future tests. Finally, I compared the mono-energetic neutron beam test approach results against those at CHARM, obtaining a highly satisfactory agreement between the memories cross sections measured in these facilities. In this way, CHARM is shown to successfully reproduce the conditions to obtain an SEE qualification compatible with that at standard mono-energetic facilities
Coronetti Andrea - One of the best experts on this subject based on the ideXlab platform.
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Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
'Institute of Electrical and Electronics Engineers (IEEE)', 2021Co-Authors: Söderström Daniel, Coronetti Andrea, Javanainen Arto, Matana Luza Lucas, Kettunen Heikki, Farabolini Wilfrid, Gilardi Antonio, Poivey Christian, Dilillo LuigiAbstract:This study investigates the response of synchronous dynamic random access memories to energetic electrons, and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72 and 110 nm) were tested. Electrons with energies between 6 MeV and 200 MeV were used at RADEF in Jyväskylä, Finland, and at VESPER in CERN, Switzerland. Photon irradiation was also performed in Jyväskylä. In these irradiation tests, stuck bits originating from electron-induced Single Event Effects were found, as well as Single bit-flips from Single electrons. To the best knowledge of the authors, this is the first time that stuck bits from Single electron-Events has been reported in the literature. It is argued in the paper that the Single Event bit-flips and stuck bits are caused by the same mechanism, large displacement damage clusters, and that they represent different amounts of damage to the memory cell. After a large particle fluence, a rapid increase in the error rate was observed, originating from the accumulation of smaller displacement damage clusters in the memory cells. The 110 nm memory was a candidate component to fly on the ESA JUICE mission, so the Single Event Effect cross section as a function of electron energy was compared to the expected electron environment encountered by JUICE to estimate the error rates during the mission.peerReviewe
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Heavy Ion Induced Single Event Effects Characterization on an RF-Agile Transceiver for Flexible Multi-Band Radio Systems in NewSpace Avionics
'MDPI AG', 2020Co-Authors: Budroweit Jan, Jaksch Mattis, Alía, Rubén Garcia, Coronetti Andrea, Kölpin AlexanderAbstract:Nowadays, technologies have a massive impact on the design of avionic systems, even for the conservative space industry. In this paper, the Single Event Effect (SEE) characterization of a highly integrated and radio frequency (RF) agile transceiver is being presented which is an outstanding candidate for future radio systems in NewSpace applications and space avionics. The device being investigated allows programmable re-configuration of RF specifications, where classical software-defined radios (SDR) only define an on-demand re-configuration of the signal processing. RF related configurations are untouched for common SDR and developed discretely by the specific application requirements. Due to the high integrity and complexity of the device under test (DUT), state-of-the-art radiation test procedures are not applicable and customized testing procedures need to be developed. The DUT shows a very robust response to linear energy transfer (LET) values up to 62.5 MeV.cm²/mg, without any destructives Events and a moderate soft error rate
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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment
'Institute of Electrical and Electronics Engineers (IEEE)', 2020Co-Authors: Coronetti Andrea, Cecchetto Matteo, García Alía Rubén, Hajdas Wojtek, Söderström Daniel, Javanainen Arto, Saigné FrédéricAbstract:The pion resonance in the nuclear reaction cross section is seen to have a direct impact on the Single-Event Effect (SEE) cross section of modern electronic devices. This was experimentally observed for Single-Event upsets and Single-Event latchup. Rectangular parallelepiped (RPP) models built to fit proton data confirm the existence of the pion SEE cross-section resonance. The impact on current radiation hardness assurance (RHA) soft error rate (SER) predictions is, however, minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the high-energy hadron equivalence approximation established for testing in mixed-field facilities
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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment
'Institute of Electrical and Electronics Engineers (IEEE)', 2020Co-Authors: Coronetti Andrea, Alía, Rubén Garcia, Cecchetto Matteo, Hajdas Wojtek, Söderström Daniel, Javanainen Arto, Saigné FrédéricAbstract:The pion resonance in the nuclear reaction cross section is seen to have direct impact on the Single Event Effect (SEE) cross-section of modern electronic devices. This was experimentally observed for Single Event Upsets and for Single Event Latchup. RPP (Rectangular ParallelePiped) models built to fit proton data confirm the existence of the pion SEE cross section resonance. The impact on current Radiation Hardness Assurance (RHA) Soft Error Rate (SER) predictions is however minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the High Energy Hadron equivalence approximation established for testing in mixed-field facilities.peerReviewe
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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment
'Institute of Electrical and Electronics Engineers (IEEE)', 2020Co-Authors: Coronetti Andrea, Cecchetto Matteo, García Alía Rubén, Hajdas Wojtek, Söderström Daniel, Javanainen Arto, Saigné FrédéricAbstract:International audienceThe pion resonance in the nuclear reaction cross section is seen to have a direct impact on the Single-Event Effect (SEE) cross section of modern electronic devices. This was experimentally observed for Single-Event upsets and Single-Event latchup. Rectangular parallelepiped (RPP) models built to fit proton data confirm the existence of the pion SEE cross-section resonance. The impact on current radiation hardness assurance (RHA) soft error rate (SER) predictions is, however, minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the high-energy hadron equivalence approximation established for testing in mixed-field facilities
Hazen E - One of the best experts on this subject based on the ideXlab platform.
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Radiation induced Single Event Effects in the ATLAS MDT-ASD front-end chip
2002Co-Authors: Posch C, Hazen EAbstract:Single Event Effect (SEE) tests of the MDT-ASD, the ATLAS MDT front-end chip have been performed at the Harvard Cyclotron Lab. The MDT-ASD is an 8-channel drift tube read-out ASIC fabricated in a commercial 0.5um CMOS process (AMOS14TB). The chip contains a 53 bit register which holds the setup information and an associated shift register of the same length plus some additional control logic. 10 test devices were exposed to a 160 MeV proton beam with a fluence of 1.05E9 p.cm-2.s-1 up to >4.4E p.cm-2 per device. After a total fluence of 4.46E13 p.cm-2, 7 soft SEEs (non-permanent bit flips in the registers) and 0 hard/destructive SEE (e.g. latch-ups, SEL) had occurred. The simulated fluence for 10 years of LHC operation at nominal luminosity for worst case location MDT components is 2.67E11 h.cm-2. The rate of SEUs in the ASD setup register for all of ATLAS, derived from these numbers, is 2.4 per day. It is foreseen to update the active registers of the on-detector electronics at regular intervals. Depending on the length of the update intervals, the SEU rate is very manageable and will not cause any significant degradation in performance of the ATLAS muon detector. The worst case impact of one SEU is the loss of eight channels out of 360.000 for the time of one update interval and occurs with a rate of ~ 1 per month
E. Hazen - One of the best experts on this subject based on the ideXlab platform.
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Radiation induced Single Event Effects in the ATLAS MDT-ASD front-end chip
2015Co-Authors: C. Posch, E. HazenAbstract:Single Event Effect (SEE) tests of the MDT-ASD, the ATLAS MDT front-end chip [9][10] have been performed at the Harvard Cyclotron Lab. The MDT-ASD is an 8-channel drift tube read-out ASIC fabricated in a commercial 0.5Pm CMOS process (AMOS14TB). The chip contains a 53 bit register which holds the setup information and an associated shift register of the same length plus some additional control logic. 10 test devices were exposed to a 160 MeV proton beam with a fluence of 1.05·109 p·cm-2·s-1 up to t4.4·1012 p·cm-2 per device. After a total fluence of 4.46·1013 p ·cm-2, 7 soft SEEs (non-permanent bit flips in the registers) and 0 hard/destructive SEE (e.g. latch-ups, SEL) had occurred. The simulated fluence for 10 years of LHC operation at nominal luminosity for worst case location MDT components is 2.67·1011 h·cm-2 The rate of SEUs in the ASD setup register for all of ATLAS, derived from these numbers, is 2.4 per day. It is foreseen to update the active registers of the on-detector electronics at regular intervals. Depending on the length of the update intervals, the SEU rate is very manageable and will not cause any significant degradation in performance of the ATLAS muon detector. The worst case impact of one SEU is the loss of eight channels out of 360.000 for the time of one update interval and occurs with a rate of ~ 1 per month. 1. Radiation environmen