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Xiwu Fan - One of the best experts on this subject based on the ideXlab platform.

  • The dependence of emission spectra of rare earth ion on the band-gap energy of MgxZn1-xO alloy
    Journal of Crystal Growth, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    Abstract Rare-earth (RE) Tb3+ ion doped ZnO and Mg0.15Zn0.85O thin films were successfully fabricated by the Sol–Gel Deposition method. The Tb3+ ion was substituted for the Zn2+ ion in the host material, as revealed by X-ray diffraction and optical absorption spectra. The cathodoluminescence properties of the doped samples were also studied. The RE3+ luminescence mechanism is discussed.

  • Optical Properties of MgxZn1−xO Polycrystalline Thin Films Prepared by Sol-Gel Deposition Method
    Journal of Sol-Gel Science and Technology, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The MgxZn1−xO alloy thin films were synthesized on Si and quartz substrates by the Sol-Gel Deposition method. The transmittance and cathodoluminescence spectra of the Mg0.05Zn0.95O and Mg0.15Zn0.85O nanoparticle films were obtained at room temperature. It was found that the bandgap of Mg0.05Zn0.95O and Mg0.15Zn0.85O films is as large as 3.72 eV and 3.79 eV, respectively. The ultraviolet emission peaks are located at 376 nm and 370 nm, respectively, for the samples annealed at 600°C. When the annealing temperature is elevated to 1000°C, the band-gap decreases to 3.42 eV and an emission line related to the deep-level defect appears at 500 nm. The mechanism behind these phenomena is discussed.

  • photoluminescence properties of mgxzn1 xo alloy thin films fabricated by the Sol Gel Deposition method
    Journal of Applied Physics, 2001
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material.

  • Photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method
    Journal of Applied Physics, 2001
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material.

Dongxu Zhao - One of the best experts on this subject based on the ideXlab platform.

  • The dependence of emission spectra of rare earth ion on the band-gap energy of MgxZn1-xO alloy
    Journal of Crystal Growth, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    Abstract Rare-earth (RE) Tb3+ ion doped ZnO and Mg0.15Zn0.85O thin films were successfully fabricated by the Sol–Gel Deposition method. The Tb3+ ion was substituted for the Zn2+ ion in the host material, as revealed by X-ray diffraction and optical absorption spectra. The cathodoluminescence properties of the doped samples were also studied. The RE3+ luminescence mechanism is discussed.

  • Optical Properties of Mg_ x Zn_1−x O Polycrystalline Thin Films Prepared by Sol-Gel Deposition Method
    Journal of Sol-Gel Science and Technology, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, X.w. Fan
    Abstract:

    The Mg_ x Zn_1− x O alloy thin films were synthesized on Si and quartz substrates by the Sol-Gel Deposition method. The transmittance and cathodoluminescence spectra of the Mg_0.05Zn_0.95O and Mg_0.15Zn_0.85O nanoparticle films were obtained at room temperature. It was found that the bandgap of Mg_0.05Zn_0.95O and Mg_0.15Zn_0.85O films is as large as 3.72 eV and 3.79 eV, respectively. The ultraviolet emission peaks are located at 376 nm and 370 nm, respectively, for the samples annealed at 600°C. When the annealing temperature is elevated to 1000°C, the band-gap decreases to 3.42 eV and an emission line related to the deep-level defect appears at 500 nm. The mechanism behind these phenomena is discussed.

  • Optical Properties of MgxZn1−xO Polycrystalline Thin Films Prepared by Sol-Gel Deposition Method
    Journal of Sol-Gel Science and Technology, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The MgxZn1−xO alloy thin films were synthesized on Si and quartz substrates by the Sol-Gel Deposition method. The transmittance and cathodoluminescence spectra of the Mg0.05Zn0.95O and Mg0.15Zn0.85O nanoparticle films were obtained at room temperature. It was found that the bandgap of Mg0.05Zn0.95O and Mg0.15Zn0.85O films is as large as 3.72 eV and 3.79 eV, respectively. The ultraviolet emission peaks are located at 376 nm and 370 nm, respectively, for the samples annealed at 600°C. When the annealing temperature is elevated to 1000°C, the band-gap decreases to 3.42 eV and an emission line related to the deep-level defect appears at 500 nm. The mechanism behind these phenomena is discussed.

  • photoluminescence properties of mgxzn1 xo alloy thin films fabricated by the Sol Gel Deposition method
    Journal of Applied Physics, 2001
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material.

  • Photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method
    Journal of Applied Physics, 2001
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material.

Yichun Liu - One of the best experts on this subject based on the ideXlab platform.

  • The dependence of emission spectra of rare earth ion on the band-gap energy of MgxZn1-xO alloy
    Journal of Crystal Growth, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    Abstract Rare-earth (RE) Tb3+ ion doped ZnO and Mg0.15Zn0.85O thin films were successfully fabricated by the Sol–Gel Deposition method. The Tb3+ ion was substituted for the Zn2+ ion in the host material, as revealed by X-ray diffraction and optical absorption spectra. The cathodoluminescence properties of the doped samples were also studied. The RE3+ luminescence mechanism is discussed.

  • Optical Properties of Mg_ x Zn_1−x O Polycrystalline Thin Films Prepared by Sol-Gel Deposition Method
    Journal of Sol-Gel Science and Technology, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, X.w. Fan
    Abstract:

    The Mg_ x Zn_1− x O alloy thin films were synthesized on Si and quartz substrates by the Sol-Gel Deposition method. The transmittance and cathodoluminescence spectra of the Mg_0.05Zn_0.95O and Mg_0.15Zn_0.85O nanoparticle films were obtained at room temperature. It was found that the bandgap of Mg_0.05Zn_0.95O and Mg_0.15Zn_0.85O films is as large as 3.72 eV and 3.79 eV, respectively. The ultraviolet emission peaks are located at 376 nm and 370 nm, respectively, for the samples annealed at 600°C. When the annealing temperature is elevated to 1000°C, the band-gap decreases to 3.42 eV and an emission line related to the deep-level defect appears at 500 nm. The mechanism behind these phenomena is discussed.

  • Optical Properties of MgxZn1−xO Polycrystalline Thin Films Prepared by Sol-Gel Deposition Method
    Journal of Sol-Gel Science and Technology, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The MgxZn1−xO alloy thin films were synthesized on Si and quartz substrates by the Sol-Gel Deposition method. The transmittance and cathodoluminescence spectra of the Mg0.05Zn0.95O and Mg0.15Zn0.85O nanoparticle films were obtained at room temperature. It was found that the bandgap of Mg0.05Zn0.95O and Mg0.15Zn0.85O films is as large as 3.72 eV and 3.79 eV, respectively. The ultraviolet emission peaks are located at 376 nm and 370 nm, respectively, for the samples annealed at 600°C. When the annealing temperature is elevated to 1000°C, the band-gap decreases to 3.42 eV and an emission line related to the deep-level defect appears at 500 nm. The mechanism behind these phenomena is discussed.

  • photoluminescence properties of mgxzn1 xo alloy thin films fabricated by the Sol Gel Deposition method
    Journal of Applied Physics, 2001
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material.

  • Photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method
    Journal of Applied Physics, 2001
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material.

Dezhen Shen - One of the best experts on this subject based on the ideXlab platform.

  • The dependence of emission spectra of rare earth ion on the band-gap energy of MgxZn1-xO alloy
    Journal of Crystal Growth, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    Abstract Rare-earth (RE) Tb3+ ion doped ZnO and Mg0.15Zn0.85O thin films were successfully fabricated by the Sol–Gel Deposition method. The Tb3+ ion was substituted for the Zn2+ ion in the host material, as revealed by X-ray diffraction and optical absorption spectra. The cathodoluminescence properties of the doped samples were also studied. The RE3+ luminescence mechanism is discussed.

  • Optical Properties of Mg_ x Zn_1−x O Polycrystalline Thin Films Prepared by Sol-Gel Deposition Method
    Journal of Sol-Gel Science and Technology, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, X.w. Fan
    Abstract:

    The Mg_ x Zn_1− x O alloy thin films were synthesized on Si and quartz substrates by the Sol-Gel Deposition method. The transmittance and cathodoluminescence spectra of the Mg_0.05Zn_0.95O and Mg_0.15Zn_0.85O nanoparticle films were obtained at room temperature. It was found that the bandgap of Mg_0.05Zn_0.95O and Mg_0.15Zn_0.85O films is as large as 3.72 eV and 3.79 eV, respectively. The ultraviolet emission peaks are located at 376 nm and 370 nm, respectively, for the samples annealed at 600°C. When the annealing temperature is elevated to 1000°C, the band-gap decreases to 3.42 eV and an emission line related to the deep-level defect appears at 500 nm. The mechanism behind these phenomena is discussed.

  • Optical Properties of MgxZn1−xO Polycrystalline Thin Films Prepared by Sol-Gel Deposition Method
    Journal of Sol-Gel Science and Technology, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The MgxZn1−xO alloy thin films were synthesized on Si and quartz substrates by the Sol-Gel Deposition method. The transmittance and cathodoluminescence spectra of the Mg0.05Zn0.95O and Mg0.15Zn0.85O nanoparticle films were obtained at room temperature. It was found that the bandgap of Mg0.05Zn0.95O and Mg0.15Zn0.85O films is as large as 3.72 eV and 3.79 eV, respectively. The ultraviolet emission peaks are located at 376 nm and 370 nm, respectively, for the samples annealed at 600°C. When the annealing temperature is elevated to 1000°C, the band-gap decreases to 3.42 eV and an emission line related to the deep-level defect appears at 500 nm. The mechanism behind these phenomena is discussed.

  • photoluminescence properties of mgxzn1 xo alloy thin films fabricated by the Sol Gel Deposition method
    Journal of Applied Physics, 2001
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material.

  • Photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method
    Journal of Applied Physics, 2001
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material.

Jiying Zhang - One of the best experts on this subject based on the ideXlab platform.

  • The dependence of emission spectra of rare earth ion on the band-gap energy of MgxZn1-xO alloy
    Journal of Crystal Growth, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    Abstract Rare-earth (RE) Tb3+ ion doped ZnO and Mg0.15Zn0.85O thin films were successfully fabricated by the Sol–Gel Deposition method. The Tb3+ ion was substituted for the Zn2+ ion in the host material, as revealed by X-ray diffraction and optical absorption spectra. The cathodoluminescence properties of the doped samples were also studied. The RE3+ luminescence mechanism is discussed.

  • Optical Properties of Mg_ x Zn_1−x O Polycrystalline Thin Films Prepared by Sol-Gel Deposition Method
    Journal of Sol-Gel Science and Technology, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, X.w. Fan
    Abstract:

    The Mg_ x Zn_1− x O alloy thin films were synthesized on Si and quartz substrates by the Sol-Gel Deposition method. The transmittance and cathodoluminescence spectra of the Mg_0.05Zn_0.95O and Mg_0.15Zn_0.85O nanoparticle films were obtained at room temperature. It was found that the bandgap of Mg_0.05Zn_0.95O and Mg_0.15Zn_0.85O films is as large as 3.72 eV and 3.79 eV, respectively. The ultraviolet emission peaks are located at 376 nm and 370 nm, respectively, for the samples annealed at 600°C. When the annealing temperature is elevated to 1000°C, the band-gap decreases to 3.42 eV and an emission line related to the deep-level defect appears at 500 nm. The mechanism behind these phenomena is discussed.

  • Optical Properties of MgxZn1−xO Polycrystalline Thin Films Prepared by Sol-Gel Deposition Method
    Journal of Sol-Gel Science and Technology, 2002
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The MgxZn1−xO alloy thin films were synthesized on Si and quartz substrates by the Sol-Gel Deposition method. The transmittance and cathodoluminescence spectra of the Mg0.05Zn0.95O and Mg0.15Zn0.85O nanoparticle films were obtained at room temperature. It was found that the bandgap of Mg0.05Zn0.95O and Mg0.15Zn0.85O films is as large as 3.72 eV and 3.79 eV, respectively. The ultraviolet emission peaks are located at 376 nm and 370 nm, respectively, for the samples annealed at 600°C. When the annealing temperature is elevated to 1000°C, the band-gap decreases to 3.42 eV and an emission line related to the deep-level defect appears at 500 nm. The mechanism behind these phenomena is discussed.

  • photoluminescence properties of mgxzn1 xo alloy thin films fabricated by the Sol Gel Deposition method
    Journal of Applied Physics, 2001
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material.

  • Photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method
    Journal of Applied Physics, 2001
    Co-Authors: Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, Xiwu Fan
    Abstract:

    The photoluminescence properties of MgxZn1−xO alloy thin films fabricated by the Sol-Gel Deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material.