The Experts below are selected from a list of 166851 Experts worldwide ranked by ideXlab platform
Yoshihiro Iwasa - One of the best experts on this subject based on the ideXlab platform.
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Spatial Extent of wave functions of gate induced hole carriers in pentacene field effect devices as investigated by electron spin resonance
Physical Review Letters, 2006Co-Authors: Kazuhiro Marumoto, Shinichi Kuroda, Taishi Takenobu, Yoshihiro IwasaAbstract:An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired pi electrons show the molecular orientation at the interface in the devices. The Spatial Extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
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Spatial Extent of wave functions of gate induced hole carriers in pentacene field effect devices as investigated by electron spin resonance
Physical Review Letters, 2006Co-Authors: Kazuhiro Marumoto, Shinichi Kuroda, Taishi Takenobu, Yoshihiro IwasaAbstract:An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have $S=1/2$ spins. Anisotropic ESR signals due to unpaired $\ensuremath{\pi}$ electrons show the molecular orientation at the interface in the devices. The Spatial Extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
Kazuhiro Marumoto - One of the best experts on this subject based on the ideXlab platform.
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Spatial Extent of wave functions of gate induced hole carriers in pentacene field effect devices as investigated by electron spin resonance
Physical Review Letters, 2006Co-Authors: Kazuhiro Marumoto, Shinichi Kuroda, Taishi Takenobu, Yoshihiro IwasaAbstract:An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired pi electrons show the molecular orientation at the interface in the devices. The Spatial Extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
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Spatial Extent of wave functions of gate induced hole carriers in pentacene field effect devices as investigated by electron spin resonance
Physical Review Letters, 2006Co-Authors: Kazuhiro Marumoto, Shinichi Kuroda, Taishi Takenobu, Yoshihiro IwasaAbstract:An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have $S=1/2$ spins. Anisotropic ESR signals due to unpaired $\ensuremath{\pi}$ electrons show the molecular orientation at the interface in the devices. The Spatial Extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
Taishi Takenobu - One of the best experts on this subject based on the ideXlab platform.
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Spatial Extent of wave functions of gate induced hole carriers in pentacene field effect devices as investigated by electron spin resonance
Physical Review Letters, 2006Co-Authors: Kazuhiro Marumoto, Shinichi Kuroda, Taishi Takenobu, Yoshihiro IwasaAbstract:An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired pi electrons show the molecular orientation at the interface in the devices. The Spatial Extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
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Spatial Extent of wave functions of gate induced hole carriers in pentacene field effect devices as investigated by electron spin resonance
Physical Review Letters, 2006Co-Authors: Kazuhiro Marumoto, Shinichi Kuroda, Taishi Takenobu, Yoshihiro IwasaAbstract:An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have $S=1/2$ spins. Anisotropic ESR signals due to unpaired $\ensuremath{\pi}$ electrons show the molecular orientation at the interface in the devices. The Spatial Extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
Shinichi Kuroda - One of the best experts on this subject based on the ideXlab platform.
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Spatial Extent of wave functions of gate induced hole carriers in pentacene field effect devices as investigated by electron spin resonance
Physical Review Letters, 2006Co-Authors: Kazuhiro Marumoto, Shinichi Kuroda, Taishi Takenobu, Yoshihiro IwasaAbstract:An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired pi electrons show the molecular orientation at the interface in the devices. The Spatial Extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
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Spatial Extent of wave functions of gate induced hole carriers in pentacene field effect devices as investigated by electron spin resonance
Physical Review Letters, 2006Co-Authors: Kazuhiro Marumoto, Shinichi Kuroda, Taishi Takenobu, Yoshihiro IwasaAbstract:An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have $S=1/2$ spins. Anisotropic ESR signals due to unpaired $\ensuremath{\pi}$ electrons show the molecular orientation at the interface in the devices. The Spatial Extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
Ye Rong - One of the best experts on this subject based on the ideXlab platform.
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No evidence for attenuated stress-induced extrastriatal dopamine signaling in psychotic disorder.
Translational psychiatry, 2015Co-Authors: Dennis Hernaus, Dina Collip, Zuzana Kasanova, Oliver Winz, Alexander Heinzel, T. Van Amelsvoort, Siamak Mohammadkhani Shali, J. Booij, Ye RongAbstract:Stress is an important risk factor in the etiology of psychotic disorder. Preclinical work has shown that stress primarily increases dopamine (DA) transmission in the frontal cortex. Given that DA-mediated hypofrontality is hypothesized to be a cardinal feature of psychotic disorder, stress-related extrastriatal DA release may be altered in psychotic disorder. Here we quantified for the first time stress-induced extrastriatal DA release and the Spatial Extent of extrastriatal DA release in individuals with non-affective psychotic disorder (NAPD). Twelve healthy volunteers (HV) and 12 matched drug-free NAPD patients underwent a single infusion [18F]fallypride positron emission tomography scan during which they completed the control and stress condition of the Montreal Imaging Stress Task. HV and NAPD did not differ in stress-induced [18F]fallypride displacement and the Spatial Extent of stress-induced [18F]fallypride displacement in medial prefrontal cortex (mPFC) and temporal cortex (TC). In the whole sample, the Spatial Extent of stress-induced radioligand displacement in right ventro-mPFC, but not dorso-mPFC or TC, was positively associated with task-induced subjective stress. Psychotic symptoms during the scan or negative, positive and general subscales of the Positive and Negative Syndrome Scale were not associated with stress-induced [18F]fallypride displacement nor the Spatial Extent of stress-induced [18F]fallypride displacement in NAPD. Our results do not offer evidence for altered stress-induced extrastriatal DA signaling in NAPD, nor altered functional relevance. The implications of these findings for the role of the DA system in NAPD and stress processing are discussed.
