The Experts below are selected from a list of 6759 Experts worldwide ranked by ideXlab platform
Jianhua Zhang - One of the best experts on this subject based on the ideXlab platform.
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High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric
IEEE Electron Device Letters, 2014Co-Authors: Yana Gao, Xifeng Li, Longlong Chen, Jifeng Shi, Xiao Wei Sun, Jianhua ZhangAbstract:In this letter, we report a solution-processed hafnium indium zinc oxide (HIZO) thin-film transistors (TFTs) with an Al-doped ZrO2 (AZO) gate dielectric. The AZO thin films were identified as an amorphous phase up to the annealing temperature of 600 °C and had a smooth surface with root-mean-Square Roughness of
Chanwook Jeon - One of the best experts on this subject based on the ideXlab platform.
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Influence of Cr thin films on the properties of flexible CIGS solar cells on steel substrates
Electronic Materials Letters, 2014Co-Authors: Kyoung-kook Kim, Moojin Kim, Jehoon Baek, Jaehyeong Lee, Young-jun Park, Chanwook JeonAbstract:The material properties of molybdenum (Mo) and Mo/chromium (Cr) combined layers as back electrodes were compared with the electrical performance of copper indium gallium diselenide (CIGS)-based solar cells fabricated on steel foil. The addition of a Cr thin layer between the Mo films and stainless steel (STS) substrates increased the columnar grain size of Mo. These results could lead to enhancements in the solar cell efficiency for CIGS films evaporated on Mo/Cr, although the root mean Square Roughness increased from 187 to 251 nm compared with that of the Mo/STS sample.
Christopher A Brown - One of the best experts on this subject based on the ideXlab platform.
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the quantification of microwear on chipped stone tools assessing the effectiveness of root mean Square Roughness rq
Lithic technology, 2008Co-Authors: James W Stemp, Ben E Childs, Samuel Vionnet, Christopher A BrownAbstract:AbstractAlthough considerable progress has been made by archaeologists and materials scientists toward the development of a method to quantitatively document use-wear on stone tool surfaces, experimentation and refinement of methods continue. The experimental program tests root mean Square Roughness (rms or Rq) of measured profiles for their ability to quantitatively discriminate the surface textures, or Roughness, of experimental stone tools used on five contact materials (shell, wood, dry hide, dry antler, and soaked antler). It employs a method for evaluating texture characterization parameters based on their ability to discriminate wear, and to determine a level of confidence for the discrimination, using the F-test. The results of this experiment demonstrate that Rq is not consistently reliable in discriminating measured profiles based on the wear caused by different contact materials on the stone tools.
Yana Gao - One of the best experts on this subject based on the ideXlab platform.
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High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric
IEEE Electron Device Letters, 2014Co-Authors: Yana Gao, Xifeng Li, Longlong Chen, Jifeng Shi, Xiao Wei Sun, Jianhua ZhangAbstract:In this letter, we report a solution-processed hafnium indium zinc oxide (HIZO) thin-film transistors (TFTs) with an Al-doped ZrO2 (AZO) gate dielectric. The AZO thin films were identified as an amorphous phase up to the annealing temperature of 600 °C and had a smooth surface with root-mean-Square Roughness of
Siegfried Janz - One of the best experts on this subject based on the ideXlab platform.
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Correlation of Scattering Loss, Sidewall Roughness and Waveguide Width in Silicon-on-Insulator (SOI) Ridge Waveguides
Journal of Lightwave Technology, 2009Co-Authors: AndrÉ Delage, Jean Lapointe, Boris Lamontagne, Jens H. Schmid, Philip Waldron, Barry A. Syrett, Siegfried JanzAbstract:We use star couplers to measure the relative scattering losses of silicon-on-insulator (SOI) ridge waveguides of various widths over the range of 1.75 to 0.2 mum in a single measurement. The scattering loss data obtained for waveguides fabricated by different photolithography and e-beam base processes correlate well with the measured root-mean-Square Roughness of the waveguide sidewalls obtained using SEM image analysis, and are in qualitative agreement with the prediction of simple scattering loss theory.
