Stability Factor

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Hideo Ohno - One of the best experts on this subject based on the ideXlab platform.

  • properties of magnetic tunnel junctions with a mgo cofeb ta cofeb mgo recording structure down to junction diameter of 11 nm
    Applied Physics Letters, 2014
    Co-Authors: H Sato, E C I Enobio, Shunsuke Fukami, Shoji Ikeda, F Matsukura, Michihiko Yamanouchi, Shun Kanai, Hideo Ohno
    Abstract:

    We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm from 56 nm. Thermal Stability Factor (Δ) of MTJ with the structure starts to decrease at D = 30 nm. D dependence of Δ agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing Factors of MTJs. Intrinsic critical current (IC0) reduces with decrease of D in the entire investigated D range. A ratio of Δ to IC0 shows continuous increase with decrease of D down to 11 nm.

  • comprehensive study of cofeb mgo magnetic tunnel junction characteristics with single and double interface scaling down to 1x nm
    International Electron Devices Meeting, 2013
    Co-Authors: T Yamamoto, Shunsuke Fukami, Naoki Kasai, Keizo Kinoshita, F Matsukura, Hideo Ohno
    Abstract:

    We study characteristics of CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis (p-MTJ) at a reduced dimension down to 1X nm fabricated by hard-mask process. CoFeB-MgO p-MTJ with double-interface shows higher thermal Stability down to 1X nm than that with single-interface. Thermal Stability Factor of 58 and intrinsic critical current of 24 μA are obtained in the CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis using double-interface structure at a diameter of 20 nmφ.

  • magnetic properties of mgo co pt multilayers with a cofeb insertion layer
    Journal of Applied Physics, 2013
    Co-Authors: S Ishikawa, Shunsuke Fukami, Shoji Ikeda, F Matsukura, H Sato, Michihiko Yamanouchi, Hideo Ohno
    Abstract:

    Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer were investigated and the structure was adopted as a recording layer in magnetic tunnel junctions (MTJs) with perpendicular magnetic easy-axis to attain a high thermal Stability. Perpendicular easy-axis was obtained with the Pt thickness range of 0.6–1.2 nm and the CoFeB thickness range of 0.6–1.5 nm. As-made MTJs employing the CoFeB-[Co/Pt] multilayer structure as a recording layer showed tunnel magnetoresistance of 40% on average. A high thermal Stability Factor over 200 was obtained in the MTJs with the size of 25 nm in diameter.

  • cofeb thickness dependence of thermal Stability Factor in cofeb mgo perpendicular magnetic tunnel junctions
    arXiv: Materials Science, 2012
    Co-Authors: H Sato, Shoji Ikeda, F Matsukura, K Miura, Michihiko Yamanouchi, R Koizumi, Hideo Ohno
    Abstract:

    Thermal Stability Factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, delta is virtually independent of the junction sizes of 48-81 nm in diameter. The values of delta increase linearly with increasing the recording layer thickness. The slope of the linear fit is explained well by a model based on nucleation type magnetization reversal.

  • cofeb thickness dependence of thermal Stability Factor in cofeb mgo perpendicular magnetic tunnel junctions
    IEEE Magnetics Letters, 2012
    Co-Authors: H Sato, Shoji Ikeda, F Matsukura, K Miura, Michihiko Yamanouchi, R Koizumi, Hideo Ohno
    Abstract:

    Thermal Stability Factor Δ of the recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, Δ is virtually independent of the junction sizes of 48-81 nm in diameter. The values of Δ increase linearly as the recording layer thickness increases. The slope of the linear fit is explained well by a model based on nucleation-type magnetization reversal.

H Sato - One of the best experts on this subject based on the ideXlab platform.

  • 14ns write speed 128mb density embedded stt mram with endurance 10 10 and 10yrs retention 85 c using novel low damage mtj integration process
    International Electron Devices Meeting, 2018
    Co-Authors: H Sato, Hiroaki Honjo, T Watanabe, Masaaki Niwa, H Koike, S Miura, Takashi Saito, H Inoue, T Nasuno, T Tanigawa
    Abstract:

    Novel damage control integration process technology has been developed through development of new low-damage MgO deposition process, low-damage RIE process, and low temperature SiN-cap process. Application of the developed damage control integration process technology to MTJ fabrication enabled us to demonstrate an improvement of TMR ratio, thermal Stability Factor, and switching efficiency. Moreover, it is shown that the endurance of the fabricated MTJs is over 1010, although thermal Stability Factor drastically increased. Finally, with the developed 37-nm p-MTJ technology and the damage control integration process technology, 128Mb density embedded STT-MRAM was fabricated. By using our 128Mb density STT-MRAM, 14ns write speed at $V_{\text{dd}}$ of 1.2V was successfully demonstrated. This result will contribute to low power MCU/IoT chip solution and so on.

  • properties of magnetic tunnel junctions with a mgo cofeb ta cofeb mgo recording structure down to junction diameter of 11 nm
    Applied Physics Letters, 2014
    Co-Authors: H Sato, E C I Enobio, Shunsuke Fukami, Shoji Ikeda, F Matsukura, Michihiko Yamanouchi, Shun Kanai, Hideo Ohno
    Abstract:

    We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm from 56 nm. Thermal Stability Factor (Δ) of MTJ with the structure starts to decrease at D = 30 nm. D dependence of Δ agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing Factors of MTJs. Intrinsic critical current (IC0) reduces with decrease of D in the entire investigated D range. A ratio of Δ to IC0 shows continuous increase with decrease of D down to 11 nm.

  • magnetic properties of mgo co pt multilayers with a cofeb insertion layer
    Journal of Applied Physics, 2013
    Co-Authors: S Ishikawa, Shunsuke Fukami, Shoji Ikeda, F Matsukura, H Sato, Michihiko Yamanouchi, Hideo Ohno
    Abstract:

    Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer were investigated and the structure was adopted as a recording layer in magnetic tunnel junctions (MTJs) with perpendicular magnetic easy-axis to attain a high thermal Stability. Perpendicular easy-axis was obtained with the Pt thickness range of 0.6–1.2 nm and the CoFeB thickness range of 0.6–1.5 nm. As-made MTJs employing the CoFeB-[Co/Pt] multilayer structure as a recording layer showed tunnel magnetoresistance of 40% on average. A high thermal Stability Factor over 200 was obtained in the MTJs with the size of 25 nm in diameter.

  • cofeb thickness dependence of thermal Stability Factor in cofeb mgo perpendicular magnetic tunnel junctions
    arXiv: Materials Science, 2012
    Co-Authors: H Sato, Shoji Ikeda, F Matsukura, K Miura, Michihiko Yamanouchi, R Koizumi, Hideo Ohno
    Abstract:

    Thermal Stability Factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, delta is virtually independent of the junction sizes of 48-81 nm in diameter. The values of delta increase linearly with increasing the recording layer thickness. The slope of the linear fit is explained well by a model based on nucleation type magnetization reversal.

  • perpendicular anisotropy cofeb mgo magnetic tunnel junctions with a mgo cofeb ta cofeb mgo recording structure
    Applied Physics Letters, 2012
    Co-Authors: H Sato, Shunsuke Fukami, Shoji Ikeda, F Matsukura, Michihiko Yamanouchi, H Ohno
    Abstract:

    We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal Stability Factor of MTJ with the structure having junction size of 70 nmφ was increased by a Factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.

Shoji Ikeda - One of the best experts on this subject based on the ideXlab platform.

  • insertion layer thickness dependence of magnetic and electrical properties for double cofeb mgo interface magnetic tunnel junctions
    IEEE Transactions on Magnetics, 2019
    Co-Authors: S Miura, Hideo Sato, Shoji Ikeda, T V A Nguyen, Y Endoh, K Nishioka, H Honjo, Tetsuo Endoh
    Abstract:

    We have studied the magnetic and electrical properties of double CoFeB–MgO interface magnetic tunnel junctions (MTJs) with various W insertion layer thicknesses $t_{\mathrm {W}}$ annealed at 400 °C and evaluated $t_{\mathrm {W}}$ dependence of thermal Stability Factor $\Delta $ , intrinsic critical current $I_{\mathrm {C0}}$ and damping constant $\alpha $ . It was found that spin-transfer torque efficiency ( $\Delta /I_{\mathrm {C0}}$ ) values increased with decreasing $t_{\mathrm {W}}$ as compared with the same MTJ size $D$ . $\alpha $ measured by ferromagnetic resonance increased with an increase in $t_{\mathrm {W}}$ , which is consistent with those calculated from $\Delta /I_{\mathrm {C0}}$ . This result indicates that lower damping constant of MTJ with thin W insertion layer contributes to higher $\Delta /I_{\mathrm {C0}}$ .

  • properties of magnetic tunnel junctions with a mgo cofeb ta cofeb mgo recording structure down to junction diameter of 11 nm
    Applied Physics Letters, 2014
    Co-Authors: H Sato, E C I Enobio, Shunsuke Fukami, Shoji Ikeda, F Matsukura, Michihiko Yamanouchi, Shun Kanai, Hideo Ohno
    Abstract:

    We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm from 56 nm. Thermal Stability Factor (Δ) of MTJ with the structure starts to decrease at D = 30 nm. D dependence of Δ agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing Factors of MTJs. Intrinsic critical current (IC0) reduces with decrease of D in the entire investigated D range. A ratio of Δ to IC0 shows continuous increase with decrease of D down to 11 nm.

  • magnetic properties of mgo co pt multilayers with a cofeb insertion layer
    Journal of Applied Physics, 2013
    Co-Authors: S Ishikawa, Shunsuke Fukami, Shoji Ikeda, F Matsukura, H Sato, Michihiko Yamanouchi, Hideo Ohno
    Abstract:

    Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer were investigated and the structure was adopted as a recording layer in magnetic tunnel junctions (MTJs) with perpendicular magnetic easy-axis to attain a high thermal Stability. Perpendicular easy-axis was obtained with the Pt thickness range of 0.6–1.2 nm and the CoFeB thickness range of 0.6–1.5 nm. As-made MTJs employing the CoFeB-[Co/Pt] multilayer structure as a recording layer showed tunnel magnetoresistance of 40% on average. A high thermal Stability Factor over 200 was obtained in the MTJs with the size of 25 nm in diameter.

  • cofeb thickness dependence of thermal Stability Factor in cofeb mgo perpendicular magnetic tunnel junctions
    arXiv: Materials Science, 2012
    Co-Authors: H Sato, Shoji Ikeda, F Matsukura, K Miura, Michihiko Yamanouchi, R Koizumi, Hideo Ohno
    Abstract:

    Thermal Stability Factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, delta is virtually independent of the junction sizes of 48-81 nm in diameter. The values of delta increase linearly with increasing the recording layer thickness. The slope of the linear fit is explained well by a model based on nucleation type magnetization reversal.

  • perpendicular anisotropy cofeb mgo magnetic tunnel junctions with a mgo cofeb ta cofeb mgo recording structure
    Applied Physics Letters, 2012
    Co-Authors: H Sato, Shunsuke Fukami, Shoji Ikeda, F Matsukura, Michihiko Yamanouchi, H Ohno
    Abstract:

    We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal Stability Factor of MTJ with the structure having junction size of 70 nmφ was increased by a Factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.

F Matsukura - One of the best experts on this subject based on the ideXlab platform.

  • properties of magnetic tunnel junctions with a mgo cofeb ta cofeb mgo recording structure down to junction diameter of 11 nm
    Applied Physics Letters, 2014
    Co-Authors: H Sato, E C I Enobio, Shunsuke Fukami, Shoji Ikeda, F Matsukura, Michihiko Yamanouchi, Shun Kanai, Hideo Ohno
    Abstract:

    We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm from 56 nm. Thermal Stability Factor (Δ) of MTJ with the structure starts to decrease at D = 30 nm. D dependence of Δ agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing Factors of MTJs. Intrinsic critical current (IC0) reduces with decrease of D in the entire investigated D range. A ratio of Δ to IC0 shows continuous increase with decrease of D down to 11 nm.

  • comprehensive study of cofeb mgo magnetic tunnel junction characteristics with single and double interface scaling down to 1x nm
    International Electron Devices Meeting, 2013
    Co-Authors: T Yamamoto, Shunsuke Fukami, Naoki Kasai, Keizo Kinoshita, F Matsukura, Hideo Ohno
    Abstract:

    We study characteristics of CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis (p-MTJ) at a reduced dimension down to 1X nm fabricated by hard-mask process. CoFeB-MgO p-MTJ with double-interface shows higher thermal Stability down to 1X nm than that with single-interface. Thermal Stability Factor of 58 and intrinsic critical current of 24 μA are obtained in the CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis using double-interface structure at a diameter of 20 nmφ.

  • magnetic properties of mgo co pt multilayers with a cofeb insertion layer
    Journal of Applied Physics, 2013
    Co-Authors: S Ishikawa, Shunsuke Fukami, Shoji Ikeda, F Matsukura, H Sato, Michihiko Yamanouchi, Hideo Ohno
    Abstract:

    Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer were investigated and the structure was adopted as a recording layer in magnetic tunnel junctions (MTJs) with perpendicular magnetic easy-axis to attain a high thermal Stability. Perpendicular easy-axis was obtained with the Pt thickness range of 0.6–1.2 nm and the CoFeB thickness range of 0.6–1.5 nm. As-made MTJs employing the CoFeB-[Co/Pt] multilayer structure as a recording layer showed tunnel magnetoresistance of 40% on average. A high thermal Stability Factor over 200 was obtained in the MTJs with the size of 25 nm in diameter.

  • cofeb thickness dependence of thermal Stability Factor in cofeb mgo perpendicular magnetic tunnel junctions
    arXiv: Materials Science, 2012
    Co-Authors: H Sato, Shoji Ikeda, F Matsukura, K Miura, Michihiko Yamanouchi, R Koizumi, Hideo Ohno
    Abstract:

    Thermal Stability Factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, delta is virtually independent of the junction sizes of 48-81 nm in diameter. The values of delta increase linearly with increasing the recording layer thickness. The slope of the linear fit is explained well by a model based on nucleation type magnetization reversal.

  • perpendicular anisotropy cofeb mgo magnetic tunnel junctions with a mgo cofeb ta cofeb mgo recording structure
    Applied Physics Letters, 2012
    Co-Authors: H Sato, Shunsuke Fukami, Shoji Ikeda, F Matsukura, Michihiko Yamanouchi, H Ohno
    Abstract:

    We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal Stability Factor of MTJ with the structure having junction size of 70 nmφ was increased by a Factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.

Michihiko Yamanouchi - One of the best experts on this subject based on the ideXlab platform.

  • properties of magnetic tunnel junctions with a mgo cofeb ta cofeb mgo recording structure down to junction diameter of 11 nm
    Applied Physics Letters, 2014
    Co-Authors: H Sato, E C I Enobio, Shunsuke Fukami, Shoji Ikeda, F Matsukura, Michihiko Yamanouchi, Shun Kanai, Hideo Ohno
    Abstract:

    We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm from 56 nm. Thermal Stability Factor (Δ) of MTJ with the structure starts to decrease at D = 30 nm. D dependence of Δ agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing Factors of MTJs. Intrinsic critical current (IC0) reduces with decrease of D in the entire investigated D range. A ratio of Δ to IC0 shows continuous increase with decrease of D down to 11 nm.

  • magnetic properties of mgo co pt multilayers with a cofeb insertion layer
    Journal of Applied Physics, 2013
    Co-Authors: S Ishikawa, Shunsuke Fukami, Shoji Ikeda, F Matsukura, H Sato, Michihiko Yamanouchi, Hideo Ohno
    Abstract:

    Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer were investigated and the structure was adopted as a recording layer in magnetic tunnel junctions (MTJs) with perpendicular magnetic easy-axis to attain a high thermal Stability. Perpendicular easy-axis was obtained with the Pt thickness range of 0.6–1.2 nm and the CoFeB thickness range of 0.6–1.5 nm. As-made MTJs employing the CoFeB-[Co/Pt] multilayer structure as a recording layer showed tunnel magnetoresistance of 40% on average. A high thermal Stability Factor over 200 was obtained in the MTJs with the size of 25 nm in diameter.

  • cofeb thickness dependence of thermal Stability Factor in cofeb mgo perpendicular magnetic tunnel junctions
    arXiv: Materials Science, 2012
    Co-Authors: H Sato, Shoji Ikeda, F Matsukura, K Miura, Michihiko Yamanouchi, R Koizumi, Hideo Ohno
    Abstract:

    Thermal Stability Factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, delta is virtually independent of the junction sizes of 48-81 nm in diameter. The values of delta increase linearly with increasing the recording layer thickness. The slope of the linear fit is explained well by a model based on nucleation type magnetization reversal.

  • perpendicular anisotropy cofeb mgo magnetic tunnel junctions with a mgo cofeb ta cofeb mgo recording structure
    Applied Physics Letters, 2012
    Co-Authors: H Sato, Shunsuke Fukami, Shoji Ikeda, F Matsukura, Michihiko Yamanouchi, H Ohno
    Abstract:

    We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal Stability Factor of MTJ with the structure having junction size of 70 nmφ was increased by a Factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.

  • cofeb thickness dependence of thermal Stability Factor in cofeb mgo perpendicular magnetic tunnel junctions
    IEEE Magnetics Letters, 2012
    Co-Authors: H Sato, Shoji Ikeda, F Matsukura, K Miura, Michihiko Yamanouchi, R Koizumi, Hideo Ohno
    Abstract:

    Thermal Stability Factor Δ of the recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, Δ is virtually independent of the junction sizes of 48-81 nm in diameter. The values of Δ increase linearly as the recording layer thickness increases. The slope of the linear fit is explained well by a model based on nucleation-type magnetization reversal.

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