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Markus Kuhn - One of the best experts on this subject based on the ideXlab platform.

  • bti reliability of 45 nm high k metal gate Process Technology
    International Reliability Physics Symposium, 2008
    Co-Authors: M Agostinelli, M Brazier, R Chau, Gilbert Dewey, Tahir Ghani, Michael L Hattendorf, J Hicks, J Kavalieros, Kelin J Kuhn, Markus Kuhn
    Abstract:

    In this paper, bias-temperature instability (BTI) characterization on 45nm high-K + metal-gate (HK+MG) transistors is presented and degradation mechanism is discussed. Transistors with an unoptimized HK film stack in the early development phase exhibited pre-existing traps and large amount of hysteresis that was consistent with literature. The optimized and final HK Process demonstrated NMOS and PMOS BTI on HK+MG transistors that are better than that of SiON at matched E-fields and comparable at targeted 30% higher use fields. The final Process also showed no hysteresis due to fast traps thereby allowing us to characterize its intrinsic degradation mechanism. On the optimized Process, NMOS BTI is attributed primarily to electron trapping in the HK bulk and HK/SiON interfacial layer (IL) regions. PMOS BTI degradation, on the other hand, is mainly interface driven and is found to be very similar to that observed on conventional SiON transistors.

Isao Yamada - One of the best experts on this subject based on the ideXlab platform.

  • cluster ion beam Process Technology 20 years of r d history
    Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2007
    Co-Authors: Isao Yamada
    Abstract:

    Abstract More than 20 years have passed since the author first began to explore the feasibility of Processing by gas cluster ion beams at the Ion Beam Engineering Experimental Laboratory of Kyoto University. Processes employing ions of gaseous material clusters comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam Technology. Cluster–surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals and dielectrics, to assisted formation of thin films with nano-scale accuracy and to other surface modification applications.

  • cluster ion beam Process Technology
    Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2003
    Co-Authors: Isao Yamada, Jiro Matsuo, Noriaki Toyoda
    Abstract:

    Since an initial study of gas cluster ion beam (GCIB) had started in Ion Beam Engineering Experimental Laboratory, Kyoto University, more than 15 years has passed. Some of the results are already been applied for an industrial use. Unique characteristics of GCIB bombardment have been found to offer potential for various industrial applications that cannot be achieved by conventional ion beam Processing. Impact of an accelerated cluster ion upon a target surface imparts very high-energy densities into the impact area and produces non-linear effects that are not observed in impacts of atomic ions. Among prospective applications are included shallow ion implantation, high-rate sputtering, surface cleaning and smoothing, and low-temperature thin film formation. Low-energy bombarding effects and sputtering effects produced by the cluster ion impact are particularly important. Cluster ion implantation has been applied to realize ultra-shallow junction formation. High-sputtering yields and lateral sputtering that cause surface smoothing cannot be achieved with monomer ion beams. The surface smoothing Process to atomic levels becomes the first production use of GCIB. High-quality thin film formation using GCIB assisted deposition is also the characteristic that is explained mainly due to the very low energy and very high-density ion bombardment.

Robert Malmqvist - One of the best experts on this subject based on the ideXlab platform.

  • monolithic integration of millimeter wave rf mems switch circuits and lnas using a gaas mmic foundry Process Technology
    2011 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, 2011
    Co-Authors: Robert Malmqvist, D Smith, C Samuelsson, A Gustafsson, Tauno Vahaheikkila, Rens Baggen
    Abstract:

    Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry Process Technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencies.

  • wide band radio frequency micro electro mechanical systems switches and switching networks using a gallium arsenide monolithic microwave integrated circuits foundry Process Technology
    Iet Microwaves Antennas & Propagation, 2011
    Co-Authors: Pekka Rantakari, Robert Malmqvist, D Smith, C Samuelsson, R Leblanc, Rolf Jonsson, W Simon, Jan Saijets, Rens Baggen, T Vahaheikkia
    Abstract:

    In this study, the authors present the designs and experimental results of radio frequency (RF) micro electro-mechanical systems (MEMS) switches and switching circuits for gallium arsenide (GaAs)-based monolithic microwave-integrated circuits (MMIC). The switches and switching networks [single-pole single throw (SPST), single-pole double throw and double-pole double throw] are fabricated using OMMIC's GaAs MMIC foundry Process Technology. Measured results for a wide-band SPST switch design show isolation better than 20 dB up to 80 GHz with impedance matching better than −15 dB and insertion loss below 1.6 dB. Such low-loss GaAs-based RF MEMS switches are also capable of sustaining a power level of more than 10 W (up to 41 dBm) at 1 and 4 GHz, respectively, during cold-switching cycling conditions. Finally, to highlight the possibilities and benefits of monolithic integration of such MEMS switches and active RF devices on the same GaAs substrate, we present the experimental results of a wide-band (i.e. more than 10–40 GHz) GaAs MEMS-enabled switched low-noise amplifier circuit.

  • Design , Packaging and Reliability Aspects of RF MEMS Circuits Fabricated Using a GaAs MMIC Foundry Process Technology
    European Microwave Conference (EuMC), 2010
    Co-Authors: Robert Malmqvist, Winfried Simon, Carl Samuelsson, Manu Lahdes, Pekka Rantakari, D Smith, Markku Lahti
    Abstract:

    In this paper, we report on recent results obtained within a pan-European research effort aiming at a successful integration of RF MEMS switches in a GaAs MMIC foundry Process Technology. Testing and characterization of GaAs based MEMS switches and RF circuits show promising results with respect to switch cycling tests, micro-seconds switching times and the relatively low losses demonstrated up to millimetre-wave frequencies. Compact GaAs RF MEMS based phase shifters together with a possible packaging solution are also presented.

Paul Watts - One of the best experts on this subject based on the ideXlab platform.

Marlon Dumas - One of the best experts on this subject based on the ideXlab platform.

  • Process aware information systems bridging people and software through Process Technology
    2005
    Co-Authors: Marlon Dumas, Wil M P Van Der Aalst, Arthur H M Ter Hofstede
    Abstract:

    In the last 10 years, there has been an explosion in the number of technologies, standards, and tools to provide Process support. The book provides a unified and comprehensive overview of the principles, techniques and technologies underlying the emerging discipline of Process aware information systems engineering. It brings together contributions from leading experts in this fast-growing field. Each chapter ends with a collection of thought-provoking exercises, which also makes it ideal as a text book. The book closes with a list of resources including suggested readings as well as URLs of relevantstandardization bodies, initiatives, and consortia

  • Process aware information systems bridging people and software through Process Technology
    2005
    Co-Authors: Marlon Dumas, Wil M P Van Der Aalst, Arthur H M Ter Hofstede
    Abstract:

    In the last 10 years, there has been an explosion in the number of technologies, standards, and tools to provide Process support. The book provides a unified and comprehensive overview of the principles, techniques and technologies underlying the emerging discipline of Process aware information systems engineering. It brings together contributions from leading experts in this fast-growing field. Each chapter ends with a collection of thought-provoking exercises, which also makes it ideal as a text book. The book closes with a list of resources including suggested readings as well as URLs of relevantstandardization bodies, initiatives, and consortia

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