The Experts below are selected from a list of 255 Experts worldwide ranked by ideXlab platform

S. Aritome - One of the best experts on this subject based on the ideXlab platform.

  • Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics
    IEEE Transactions on Electron Devices, 1998
    Co-Authors: S. Satoh, G. Hemink, K. Hatakeyama, S. Aritome
    Abstract:

    This paper describes the characteristics of the stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics. The following three items were newly observed. First, the threshold voltage shift (/spl Delta/V/sub th/) of the memory cell under the gate bias condition (read disturb condition) consists of two Regions, a decay Region and a Steady-State Region. The decay Region is due to both the initial trapping or detrapping of the carriers in the tunnel oxide and the decay of the stress-induced leakage current of the tunnel oxide. The Steady-State Region is determined by the saturation of the stress-induced leakage current of the tunnel oxide. Second, the read disturb life time is mainly determined by the Steady-State Region for the oxide thickness of 5.7-10.6 nm investigated here. Third, a high-temperature (125/spl deg/C) write/erase operation degrades the Steady-State Region characteristics in comparison with room temperature (30/spl deg/C) operation. Therefore, accelerated write/erase tests can be carried out at higher operation temperatures.

  • Stress induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics
    Proceedings International Conference on Microelectronic Test Structures, 1995
    Co-Authors: S. Satoh, G. Hemink, F. Hatakeyama, S. Aritome
    Abstract:

    This paper describes the characteristics of the stress induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics. The following three items are newly observed. First, the threshold voltage shift (/spl Delta/Vth) of the memory cell under gate stress condition (read disturb condition) consists of two Regions, a decay Region and a Steady State Region. The decay Region is due to both the initial trapping or detrapping of carriers in the tunnel oxide and the decay of the stress induced leakage current of the tunnel oxide. The Steady State Region is determined by the saturation of the stress induced leakage current of the tunnel oxide. Second, the read disturb life time is mainly determined by the Steady State Region for the oxide thickness of 5.7-10.6 nm investigated here. Third, a high temperature (125/spl deg/C) write/erase operation degrades the Steady State Region characteristics in comparison with room temperature (30/spl deg/C) operation. Therefore, accelerated write/erase tests can be carried out at higher operation temperatures.

S. Satoh - One of the best experts on this subject based on the ideXlab platform.

  • Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics
    IEEE Transactions on Electron Devices, 1998
    Co-Authors: S. Satoh, G. Hemink, K. Hatakeyama, S. Aritome
    Abstract:

    This paper describes the characteristics of the stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics. The following three items were newly observed. First, the threshold voltage shift (/spl Delta/V/sub th/) of the memory cell under the gate bias condition (read disturb condition) consists of two Regions, a decay Region and a Steady-State Region. The decay Region is due to both the initial trapping or detrapping of the carriers in the tunnel oxide and the decay of the stress-induced leakage current of the tunnel oxide. The Steady-State Region is determined by the saturation of the stress-induced leakage current of the tunnel oxide. Second, the read disturb life time is mainly determined by the Steady-State Region for the oxide thickness of 5.7-10.6 nm investigated here. Third, a high-temperature (125/spl deg/C) write/erase operation degrades the Steady-State Region characteristics in comparison with room temperature (30/spl deg/C) operation. Therefore, accelerated write/erase tests can be carried out at higher operation temperatures.

  • Stress induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics
    Proceedings International Conference on Microelectronic Test Structures, 1995
    Co-Authors: S. Satoh, G. Hemink, F. Hatakeyama, S. Aritome
    Abstract:

    This paper describes the characteristics of the stress induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics. The following three items are newly observed. First, the threshold voltage shift (/spl Delta/Vth) of the memory cell under gate stress condition (read disturb condition) consists of two Regions, a decay Region and a Steady State Region. The decay Region is due to both the initial trapping or detrapping of carriers in the tunnel oxide and the decay of the stress induced leakage current of the tunnel oxide. The Steady State Region is determined by the saturation of the stress induced leakage current of the tunnel oxide. Second, the read disturb life time is mainly determined by the Steady State Region for the oxide thickness of 5.7-10.6 nm investigated here. Third, a high temperature (125/spl deg/C) write/erase operation degrades the Steady State Region characteristics in comparison with room temperature (30/spl deg/C) operation. Therefore, accelerated write/erase tests can be carried out at higher operation temperatures.

G. Hemink - One of the best experts on this subject based on the ideXlab platform.

  • Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics
    IEEE Transactions on Electron Devices, 1998
    Co-Authors: S. Satoh, G. Hemink, K. Hatakeyama, S. Aritome
    Abstract:

    This paper describes the characteristics of the stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics. The following three items were newly observed. First, the threshold voltage shift (/spl Delta/V/sub th/) of the memory cell under the gate bias condition (read disturb condition) consists of two Regions, a decay Region and a Steady-State Region. The decay Region is due to both the initial trapping or detrapping of the carriers in the tunnel oxide and the decay of the stress-induced leakage current of the tunnel oxide. The Steady-State Region is determined by the saturation of the stress-induced leakage current of the tunnel oxide. Second, the read disturb life time is mainly determined by the Steady-State Region for the oxide thickness of 5.7-10.6 nm investigated here. Third, a high-temperature (125/spl deg/C) write/erase operation degrades the Steady-State Region characteristics in comparison with room temperature (30/spl deg/C) operation. Therefore, accelerated write/erase tests can be carried out at higher operation temperatures.

  • Stress induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics
    Proceedings International Conference on Microelectronic Test Structures, 1995
    Co-Authors: S. Satoh, G. Hemink, F. Hatakeyama, S. Aritome
    Abstract:

    This paper describes the characteristics of the stress induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics. The following three items are newly observed. First, the threshold voltage shift (/spl Delta/Vth) of the memory cell under gate stress condition (read disturb condition) consists of two Regions, a decay Region and a Steady State Region. The decay Region is due to both the initial trapping or detrapping of carriers in the tunnel oxide and the decay of the stress induced leakage current of the tunnel oxide. The Steady State Region is determined by the saturation of the stress induced leakage current of the tunnel oxide. Second, the read disturb life time is mainly determined by the Steady State Region for the oxide thickness of 5.7-10.6 nm investigated here. Third, a high temperature (125/spl deg/C) write/erase operation degrades the Steady State Region characteristics in comparison with room temperature (30/spl deg/C) operation. Therefore, accelerated write/erase tests can be carried out at higher operation temperatures.

K. Hatakeyama - One of the best experts on this subject based on the ideXlab platform.

  • Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics
    IEEE Transactions on Electron Devices, 1998
    Co-Authors: S. Satoh, G. Hemink, K. Hatakeyama, S. Aritome
    Abstract:

    This paper describes the characteristics of the stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics. The following three items were newly observed. First, the threshold voltage shift (/spl Delta/V/sub th/) of the memory cell under the gate bias condition (read disturb condition) consists of two Regions, a decay Region and a Steady-State Region. The decay Region is due to both the initial trapping or detrapping of the carriers in the tunnel oxide and the decay of the stress-induced leakage current of the tunnel oxide. The Steady-State Region is determined by the saturation of the stress-induced leakage current of the tunnel oxide. Second, the read disturb life time is mainly determined by the Steady-State Region for the oxide thickness of 5.7-10.6 nm investigated here. Third, a high-temperature (125/spl deg/C) write/erase operation degrades the Steady-State Region characteristics in comparison with room temperature (30/spl deg/C) operation. Therefore, accelerated write/erase tests can be carried out at higher operation temperatures.

Herry Santoso - One of the best experts on this subject based on the ideXlab platform.

  • the Steady State Region of attraction under linear feedback control a numerical approach
    Journal of Process Control, 2009
    Co-Authors: Herry Santoso
    Abstract:

    Abstract In this paper, a numerical approach to operability analysis is developed. Based on the concept of the Steady-State Region of attraction, which indicates the initial operating conditions that can be driven to a given setpoint, this analysis helps design engineers assess whether a process can be effectively controlled by linear control systems. Using Steady-State operating data that are generated with process simulators (such as ASPEN PLUS ® ), the Steady-State Region of attraction are calculated by solving the proposed constrained nonlinear optimization problem. The objective function for the optimization problem is developed using the ellipsoid theory while the constraint functions are formulated from the complement set of the initially defined constraint set and the boundary of the available input space (AIS). Furthermore, as the solution of a nonlinear optimization problem generally depends on the initial starting point, a method of generating a set of ellipsoids in the hyperspace to start the calculation is also developed. The proposed constrained nonlinear optimization problem can be solved using numerical tools such as MATLAB ® . This analysis can be performed based on process flowsheets with process simulators and thus is useful in early stages of process design. The use of the proposed numerical framework is illustrated by a case study of a methyl acetate reactive distillation column.