Substrate Distance

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Diederik Depla - One of the best experts on this subject based on the ideXlab platform.

  • influence of the target Substrate Distance on the growth of ysz thin films
    Surface & Coatings Technology, 2014
    Co-Authors: Jérika Lamas, Wouter Leroy, Diederik Depla
    Abstract:

    Abstract The reduction of yttria-stabilized zirconia (YSZ) thickness is one of the aims of current studies to lower the process temperature of the Solid Oxide Fuel Cells. Bulk YSZ has been extensively used as electrolyte. However, thin films change the fundamental aspects of the oxygen ion conduction due to the occurrence of nano-effects. Therefore, the understanding of the microstructure and crystallinity would open the possibility to manipulate the YSZ properties. This work describes some features of YSZ thin films produced by dual magnetron sputtering. Target–Substrate Distance was varied creating a compositional gradient along the films. Moreover, a tilt of the lattice from 0° to 45° was identified when changing the yttrium content. The use of a simple stress model allows predicting this tilt, when taking into consideration the compositional gradient in any region of the YSZ layer. The calculated tilt angles, based on experimental results from SEM, EDX and profilometry, are in good agreement with the results obtained via the azimuthal angle from XRD measurements.

  • Influence of the target–Substrate Distance on the growth of YSZ thin films
    Surface and Coatings Technology, 2014
    Co-Authors: Jérika Lamas, Wouter Leroy, Diederik Depla
    Abstract:

    Abstract The reduction of yttria-stabilized zirconia (YSZ) thickness is one of the aims of current studies to lower the process temperature of the Solid Oxide Fuel Cells. Bulk YSZ has been extensively used as electrolyte. However, thin films change the fundamental aspects of the oxygen ion conduction due to the occurrence of nano-effects. Therefore, the understanding of the microstructure and crystallinity would open the possibility to manipulate the YSZ properties. This work describes some features of YSZ thin films produced by dual magnetron sputtering. Target–Substrate Distance was varied creating a compositional gradient along the films. Moreover, a tilt of the lattice from 0° to 45° was identified when changing the yttrium content. The use of a simple stress model allows predicting this tilt, when taking into consideration the compositional gradient in any region of the YSZ layer. The calculated tilt angles, based on experimental results from SEM, EDX and profilometry, are in good agreement with the results obtained via the azimuthal angle from XRD measurements.

  • dependence of the sticking coefficient of sputtered atoms on the target Substrate Distance
    Journal of Physics D, 2008
    Co-Authors: Stijn Mahieu, K. Van Aeken, Diederik Depla, Dries Smeets, André Vantomme
    Abstract:

    A Ti target was mounted on a planar magnetron and sputtered in a mixture of Ar and N2, resulting in a flux of metallic Ti particles forming a TiN film on a Substrate. The sticking coefficient of Ti was determined by comparing the Ti flux towards the Substrate with the actual amount of deposited Ti particles, as determined by Rutherford backscattering spectrometry. It was observed that the sticking coefficient of Ti increases significantly with increasing target–Substrate Distance, but is to a lesser extent influenced by the N2 partial pressure.

  • Dependence of the sticking coefficient of sputtered atoms on the target–Substrate Distance
    Journal of Physics D: Applied Physics, 2008
    Co-Authors: Stijn Mahieu, K. Van Aeken, Diederik Depla, Dries Smeets, André Vantomme
    Abstract:

    A Ti target was mounted on a planar magnetron and sputtered in a mixture of Ar and N2, resulting in a flux of metallic Ti particles forming a TiN film on a Substrate. The sticking coefficient of Ti was determined by comparing the Ti flux towards the Substrate with the actual amount of deposited Ti particles, as determined by Rutherford backscattering spectrometry. It was observed that the sticking coefficient of Ti increases significantly with increasing target–Substrate Distance, but is to a lesser extent influenced by the N2 partial pressure.

Daisuke Sonobe - One of the best experts on this subject based on the ideXlab platform.

Dongping Zhan - One of the best experts on this subject based on the ideXlab platform.

  • Tip–Substrate Distance-Dependent Etching Process of III–V Semiconductors Investigated by Scanning Electrochemical Microscopy
    The Journal of Physical Chemistry C, 2019
    Co-Authors: Jie Zhang, Matthew M. Sartin, Jiayao Guo, Duan Chen, Junhui Lai, Lianhuan Han, Dongping Zhan
    Abstract:

    Based on the fundamentals of electrochemically induced chemical etching, the confined etchant layer technique (CELT) has proven to be a versatile electrochemical micro/nanofiabrication technique. However, the tip–Substrate Distance-dependent etching reaction rate and surface passivation reaction rate make it difficult to correlate these electrochemical micro/nanofabrication conditions with practical etching results. In this article, combining topography analysis of etching pits and finite element method (FEM), we investigated the effect of tip–Substrate Distance coupling with etching reaction kinetics (ke) and passivation reaction kinetics (kp) on the etching of III–V semiconductors. Further, the coupling relationships between tip–Substrate Distance and reaction kinetics are correlated to practical etching profiles. It is found that tip–Substrate Distance is more important for etching resolution, while ke and kp are more important for etching efficiency. For materials with small kp (i.e., n-GaAs), choosin...

  • tip Substrate Distance dependent etching process of iii v semiconductors investigated by scanning electrochemical microscopy
    Journal of Physical Chemistry C, 2019
    Co-Authors: Jie Zhang, Matthew M. Sartin, Jiayao Guo, Duan Chen, Junhui Lai, Lianhuan Han, Dongping Zhan
    Abstract:

    Based on the fundamentals of electrochemically induced chemical etching, the confined etchant layer technique (CELT) has proven to be a versatile electrochemical micro/nanofiabrication technique. However, the tip–Substrate Distance-dependent etching reaction rate and surface passivation reaction rate make it difficult to correlate these electrochemical micro/nanofabrication conditions with practical etching results. In this article, combining topography analysis of etching pits and finite element method (FEM), we investigated the effect of tip–Substrate Distance coupling with etching reaction kinetics (ke) and passivation reaction kinetics (kp) on the etching of III–V semiconductors. Further, the coupling relationships between tip–Substrate Distance and reaction kinetics are correlated to practical etching profiles. It is found that tip–Substrate Distance is more important for etching resolution, while ke and kp are more important for etching efficiency. For materials with small kp (i.e., n-GaAs), choosin...

Jérika Lamas - One of the best experts on this subject based on the ideXlab platform.

  • influence of the target Substrate Distance on the growth of ysz thin films
    Surface & Coatings Technology, 2014
    Co-Authors: Jérika Lamas, Wouter Leroy, Diederik Depla
    Abstract:

    Abstract The reduction of yttria-stabilized zirconia (YSZ) thickness is one of the aims of current studies to lower the process temperature of the Solid Oxide Fuel Cells. Bulk YSZ has been extensively used as electrolyte. However, thin films change the fundamental aspects of the oxygen ion conduction due to the occurrence of nano-effects. Therefore, the understanding of the microstructure and crystallinity would open the possibility to manipulate the YSZ properties. This work describes some features of YSZ thin films produced by dual magnetron sputtering. Target–Substrate Distance was varied creating a compositional gradient along the films. Moreover, a tilt of the lattice from 0° to 45° was identified when changing the yttrium content. The use of a simple stress model allows predicting this tilt, when taking into consideration the compositional gradient in any region of the YSZ layer. The calculated tilt angles, based on experimental results from SEM, EDX and profilometry, are in good agreement with the results obtained via the azimuthal angle from XRD measurements.

  • Influence of the target–Substrate Distance on the growth of YSZ thin films
    Surface and Coatings Technology, 2014
    Co-Authors: Jérika Lamas, Wouter Leroy, Diederik Depla
    Abstract:

    Abstract The reduction of yttria-stabilized zirconia (YSZ) thickness is one of the aims of current studies to lower the process temperature of the Solid Oxide Fuel Cells. Bulk YSZ has been extensively used as electrolyte. However, thin films change the fundamental aspects of the oxygen ion conduction due to the occurrence of nano-effects. Therefore, the understanding of the microstructure and crystallinity would open the possibility to manipulate the YSZ properties. This work describes some features of YSZ thin films produced by dual magnetron sputtering. Target–Substrate Distance was varied creating a compositional gradient along the films. Moreover, a tilt of the lattice from 0° to 45° was identified when changing the yttrium content. The use of a simple stress model allows predicting this tilt, when taking into consideration the compositional gradient in any region of the YSZ layer. The calculated tilt angles, based on experimental results from SEM, EDX and profilometry, are in good agreement with the results obtained via the azimuthal angle from XRD measurements.

Katsumi Tanaka - One of the best experts on this subject based on the ideXlab platform.