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Junhao Chu - One of the best experts on this subject based on the ideXlab platform.
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effect of Sulfurization temperature on properties of cu2sns3 thin films and solar cells prepared by Sulfurization of stacked metallic precursors
Materials Science in Semiconductor Processing, 2015Co-Authors: Yuchen Dong, Lin Sun, Ye Chen, Pingxiong Yang, Junhao ChuAbstract:Abstract Cu2SnS3 (CTS) thin films were synthesized by the Sulfurization of stacked metallic precursor fabricated with a radio frequency magnetron sputtering method. The compositional, structural, morphological, optical and electrical properties of CTS thin films grown on soda lime glass substrates depend on the Sulfurization temperature. The compositional analysis shows that all samples are in Sn-rich state. The ratio of Cu/Sn is close to the stoichiometric composition of CTS with increasing Sulfurization temperature. The CTS thin films sulfurized at higher Sulfurization temperature have better crystalline quality from the results of structural characterization. The CTS thin film obtained at Sulfurization temperature 550 °C exhibits higher degree of crystallization with larger average grain size. The transmission and reflectance spectra demonstrate the band gap is around 1.0 eV, which is consistent with the estimation extrapolated from external quantum efficiency. The photoelectric properties of solar cell are enhanced with the increase of Sulfurization temperature. The solar cell fabricated with the CTS absorber layer annealed at 550 °C has the efficiency up to 0.28% for a 0.16 cm2 area.
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influence of Sulfurization pressure on cu2znsns4 thin films and solar cells prepared by Sulfurization of metallic precursors
Journal of Power Sources, 2015Co-Authors: Lin Sun, Ye Chen, Jinchun Jiang, Pingxiong Yang, Junhao ChuAbstract:Abstract Effects of Sulfurization pressure on composition, morphology and microstructure of kesterite Cu 2 ZnSnS 4 (CZTS) thin films obtained by Sulfurization of the metallic layers have been investigated in detail. It is found that the S content in the CZTS thin films is strongly dependent on the Sulfurization pressure. The CZTS thin films sulfurized under low Sulfurization pressure have S-poor state with a bilayer structure, while it exhibits sufficient amounts of sulfur under high Sulfurization pressure with grain growth throughout the entire absorber film. X-ray diffraction data indicate lower Sulfurization pressure during the CZTS grain growth process can induce the formation of more structural defects in the CZTS lattice and the CZTS thin films sulfurized under high Sulfurization pressure have more random orientation. Furthermore, ZnS and MoS 2 phase exist in all samples determined by Fourier transform infrared reflectance spectroscopy as complementary to Raman spectroscopy. The solar cell fabricated with the CZTS thin film under 10 Torr Sulfurization pressure shows the best conversion efficiency of 3.52% ( V OC = 484 mV, J SC = 14.56 mA cm −2 , FF = 50.1%).
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synthesis and characterization of cu2znsns4 thin films by the Sulfurization of co electrodeposited cu zn sn s precursor layers for solar cell applications
RSC Advances, 2014Co-Authors: Jiahua Tao, Lin Sun, Jinchun Jiang, Pingxiong Yang, Junfeng Liu, Kezhi Zhang, Junhao ChuAbstract:Cu2ZnSnS4 (CZTS) absorbers have been successfully deposited on tin-doped indium oxide coated glass (ITO/glass) substrates by Sulfurization process of co-electrodeposited Cu–Zn–Sn–S precursor thin films at various annealing temperatures ranging from 500 to 580 °C for 30 min in an atmosphere of Ar–H2S (6.5%). The effects of Sulfurization temperature on the structure, morphology, composition and optical properties of CZTS thin films have been investigated in details. XRD and Raman measurements reveal that the intensity of preferential orientation along the (112) direction becomes relatively more intense and sharp with increasing annealing temperature. The morphological and chemical composition studies indicate the formation of compact and homogenous CZTS thin films with Cu-poor and Zn-rich composition at a Sulfurization temperature of 560 °C. And its band gap energy is around 1.50 eV. The AZO/i-ZnO/CdS/CZTS/ITO/glass thin-film solar cell is fabricated with the CZTS absorber layer grown at an optimized Sulfurization temperature of 560 °C. It shows a power conversion efficiency of 1.98% for a 0.25 cm2 area with Voc = 490 mV, Jsc = 9.69 mA cm−2 and FF = 40.03%.
Masakazu Aono - One of the best experts on this subject based on the ideXlab platform.
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Structural studies of copper sulfide films: effect of ambient atmosphere
Science and Technology of Advanced Materials, 2008Co-Authors: Manisha Kundu, Kazuya Terabe, Tsuyoshi Hasegawa, Kazuhiro Yamamoto, Masakazu AonoAbstract:We examined the structural properties of copper sulfide films as a function of the Sulfurization time of 70-nm-thick Cu films. Copper sulfide films with various phases such as mixed metallic Cu-chalcocite, chalcocite, roxbyite, and covellite phases were formed with increasing Sulfurization time. To evaluate the structural stability of various films, all the films were exposed to the ambient atmosphere for the same amount of time. Although the phase structure and stoichiometry of the films were maintained at a greater depth, the near-surface region of the films was oxidized and covered with overlayers of oxide, hydroxide, and/or sulfate species due to the exposure and reaction with the ambient atmosphere. The oxygen uptake and its reactivity with the copper sulfide film surfaces were enhanced with increasing sulfur content of the films. In addition, the type of divalent state of copper formed on the film surfaces depended on the phase structure, composition, and stoichiometry of the films.
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Effect of Sulfurization conditions on structural and electrical properties of copper sulfide films
Journal of Applied Physics, 2008Co-Authors: Manisha Kundu, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu AonoAbstract:We examined the structural and electrical properties of copper sulfide films as a function of the Sulfurization time of 70-nm-thick Cu films. Copper sulfide films with various phases such as mixed metallic Cu-chalcocite, chalcocite, roxbyite, and mixed roxbyite-covellite phases were formed with increasing Sulfurization time. The Cu∕S atomic percentage ratio of the films decreased with increasing Sulfurization time, and films with various compositions such as Cu-rich and stoichiometric copper sulfide with underlying unreacted Cu as well as pure stoichiometric and S-rich copper sulfide were obtained. The surface morphology and the electrical resistivity of the films depended on the chemical phase and composition of the films. The resistivity decreased with increasing Cu deficiency in the films. Distinct switching of the resistance from high to low-state, and vice versa, with the reversal of the bias polarity of the film was observed only for the mixed metallic Cu-chalcocite phased film with underlying Cu. H...
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effect of Sulfurization conditions and post deposition annealing treatment on structural and electrical properties of silver sulfide films
Journal of Applied Physics, 2006Co-Authors: Manisha Kundu, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu AonoAbstract:We examined the structural and electrical properties of silver sulfide films as a function of the Sulfurization time of 70-nm-thick Ag films. Variations in the Sulfurization time caused variations in the Ag∕S atomic percentage ratio of the silver sulfide films, and as-grown films with various compositions, such as S-rich (Ag∕S=1.59), stoichiometric (Ag∕S=2), and Ag-rich (Ag∕S=2.16) films were formed. Amongst the various as-grown films, Ag ions existed in the most polarizable environment in the Ag-rich films. All the films existed in the acanthite α-phase, and the Sulfurization conditions did not cause any drastic change in the preferred orientation of this phase. The resistivity of these films strongly depended on the Ag∕S ratio. While the resistivity of stoichiometric or S-rich films was about 107–108Ωcm, excess Ag of the Ag-rich film caused a decrease in the resistivity by four orders of magnitude. The Ag∕S ratio also played a significant role in our observation of the change in resistance within the fi...
Jin Hyeok Kim - One of the best experts on this subject based on the ideXlab platform.
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a 5 1 efficient kesterite cu2znsns4 czts thin film solar cell prepared using modified Sulfurization process
Physica Status Solidi (c), 2015Co-Authors: Myeng Gil Gang, K V Gurav, Seung Wook Shin, M P Suryawanshi, Chang W Hong, Jung H Min, S A Vanalakar, Dong S Lee, Jin Hyeok KimAbstract:Cu2ZnSnS4 (CZTS) absorber thin films are prepared by Sulfurization of sputtered Cu/Sn/Zn (CZT) stacked metallic precursor. The modified Sulfurization process is adapted to prepare photovoltaic quality CZTS films. Specifically, sputtered CZT precursor films are sulfurized in sulfur powder contained graphite box using rapid thermal processing furnace at 580 °C for 10 min, in N2(95%) + H2S (5%) atmosphere. The Cu-poor CZTS films with various Cu/(Zn+Sn) ratio are prepared by varying Cu layer deposition time. The effect of Cu/(Zn+Sn) ratio on the properties of CZTS films is investigated. The CZTS thin film solar cells with Cu/(Zn+Sn)=0.76 shows best conversion efficiency of 5.1% (Voc: 573 mV, Jsc: 18.38 mA/cm2, FF: 0.48%, and active area: 0.31 cm2). (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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growth of void free cu2znsns4 czts thin films by Sulfurization of stacked metallic precursor films
Vacuum, 2014Co-Authors: S M Pawar, Akbar I Inamdar, K V Gurav, Seung Wook Shin, Jongmin Kim, Jin Hyeok KimAbstract:Abstract A void free Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated glass substrates by using Sulfurization of sputtered stack metallic precursor at 580 °C in (N2 + H2S) atmosphere for different Sulfurization times ranging from 60 min to 180 min. The effects of Sulfurization time on the structural, morphological, chemical and optical properties of the sulfurized CZTS thin films have been investigated. All the sulfurized CZTS thin films exhibit a polycrystalline kesterite crystal structure with a void free densely packed large grain morphology. Compositional study indicates that the Zn/Sn ratio increases with increasing Sulfurization time, and for long Sulfurization the sulfur content in the film decreases. The band gap energies of the sulfurized CZTS thin films are found to be in the range between 1.51 and 1.64 eV.
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synthesis of cu2znsns4 czts absorber by rapid thermal processing rtp Sulfurization of stacked metallic precursor films for solar cell applications
Materials Letters, 2014Co-Authors: S M Pawar, Akbar I Inamdar, K V Gurav, Seung Wook Shin, B S Pawar, Xiao Yanjun, Sanjay S Kolekar, Jungho Lee, Jin Hyeok KimAbstract:Abstract Cu2ZnSnS4 (CZTS) absorbers have been grown on Mo-coated glass substrates by the rapid thermal processing (RTP) Sulfurization of stacked metallic precursor (CZT) films at different annealing temperatures ranging from 500 to 580 °C for 5 min in sulfur atmosphere. The effects of Sulfurization temperature on the structural, morphological, chemical, and optical properties of the CZTS absorbers have been investigated. XRD and Raman studies reveal that the as-deposited stacked metallic precursor films consist of metal elements such as Zn, Sn and binary alloys such as Cu6Sn5, Cu3Sn and CuZn. The sulfurized CZTS absorber films have single phase polycrystalline kesterite crystal structure with dense morphology. At 580 °C, the CZT metallic precursor film is fully sulfurized with Zn-rich and Sn-poor composition, and its bandgap energy is found to be 1.50 eV. The solar cell fabricated with the CZTS absorber grown at an optimized Sulfurization temperature of 580 °C shows a conversion efficiency of ~5% for a 0.44 cm2 area with Voc=561 mV, Jsc=18.4 mA/cm2, and FF=48.2.
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electrosynthesis of czts films by Sulfurization of czt precursor effect of soft annealing treatment
Applied Surface Science, 2013Co-Authors: K V Gurav, S M Pawar, Seung Wook Shin, M P Suryawanshi, G L Agawane, P S Patil, Jong Ha Moon, Jae Ho Yun, Jin Hyeok KimAbstract:Abstract In the present work, CZTS thin films have been prepared by Sulfurization of electrodeposited Cu–Zn–Sn (CZT) precursor. Prior to Sulfurization, as-deposited CZT precursors have been soft annealed in Ar atmosphere at different temperatures (250–350 °C). The structural, morphological, compositional and optical properties of the films have been investigated in detail. It is found that, soft annealing temperature has a significant impact on the properties of CZTS thin films. The systematic study on the improvement in the properties of CZTS films using soft annealing route has been studied and discussed.
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crystallization behaviour of co sputtered cu2znsns4 precursor prepared by sequential Sulfurization processes
Nanotechnology, 2013Co-Authors: Jun Hee Han, Seung Wook Shin, Jin Hyeok Kim, M G Gang, Jeong Yong LeeAbstract:Cu2ZnSnS4 (CZTS) thin films were prepared by the sequential Sulfurization of a co-sputtered precursor with a multitarget (Cu, ZnS, and SnS2) sputtering system. In order to investigate the crystallization behaviour of the thin films, the precursors were sulfurized in a tube furnace at different temperatures for different time durations. The Raman spectra of the sulfurized thin films showed that their crystallinity gradually improved with an increase in the Sulfurization temperature and duration. However, transmission electron microscopy revealed an unexpected result—the precursor thin films were not completely transformed to the CZTS phase and showed the presence of uncrystallized material when sulfurized at 250–400 °C for 60 min and at 500 °C for 30 min. Thus, the crystallization of the co-sputtered precursor thin films showed a strong dependence on the Sulfurization temperature and duration. The crystallization mechanism of the precursor thin films was understood on the basis of these results and has been described in this paper. The understanding of this mechanism may improve the standard preparation method for high-quality CZTS absorber layers.
Lin Sun - One of the best experts on this subject based on the ideXlab platform.
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effect of Sulfurization temperature on properties of cu2sns3 thin films and solar cells prepared by Sulfurization of stacked metallic precursors
Materials Science in Semiconductor Processing, 2015Co-Authors: Yuchen Dong, Lin Sun, Ye Chen, Pingxiong Yang, Junhao ChuAbstract:Abstract Cu2SnS3 (CTS) thin films were synthesized by the Sulfurization of stacked metallic precursor fabricated with a radio frequency magnetron sputtering method. The compositional, structural, morphological, optical and electrical properties of CTS thin films grown on soda lime glass substrates depend on the Sulfurization temperature. The compositional analysis shows that all samples are in Sn-rich state. The ratio of Cu/Sn is close to the stoichiometric composition of CTS with increasing Sulfurization temperature. The CTS thin films sulfurized at higher Sulfurization temperature have better crystalline quality from the results of structural characterization. The CTS thin film obtained at Sulfurization temperature 550 °C exhibits higher degree of crystallization with larger average grain size. The transmission and reflectance spectra demonstrate the band gap is around 1.0 eV, which is consistent with the estimation extrapolated from external quantum efficiency. The photoelectric properties of solar cell are enhanced with the increase of Sulfurization temperature. The solar cell fabricated with the CTS absorber layer annealed at 550 °C has the efficiency up to 0.28% for a 0.16 cm2 area.
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influence of Sulfurization pressure on cu2znsns4 thin films and solar cells prepared by Sulfurization of metallic precursors
Journal of Power Sources, 2015Co-Authors: Lin Sun, Ye Chen, Jinchun Jiang, Pingxiong Yang, Junhao ChuAbstract:Abstract Effects of Sulfurization pressure on composition, morphology and microstructure of kesterite Cu 2 ZnSnS 4 (CZTS) thin films obtained by Sulfurization of the metallic layers have been investigated in detail. It is found that the S content in the CZTS thin films is strongly dependent on the Sulfurization pressure. The CZTS thin films sulfurized under low Sulfurization pressure have S-poor state with a bilayer structure, while it exhibits sufficient amounts of sulfur under high Sulfurization pressure with grain growth throughout the entire absorber film. X-ray diffraction data indicate lower Sulfurization pressure during the CZTS grain growth process can induce the formation of more structural defects in the CZTS lattice and the CZTS thin films sulfurized under high Sulfurization pressure have more random orientation. Furthermore, ZnS and MoS 2 phase exist in all samples determined by Fourier transform infrared reflectance spectroscopy as complementary to Raman spectroscopy. The solar cell fabricated with the CZTS thin film under 10 Torr Sulfurization pressure shows the best conversion efficiency of 3.52% ( V OC = 484 mV, J SC = 14.56 mA cm −2 , FF = 50.1%).
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synthesis and characterization of cu2znsns4 thin films by the Sulfurization of co electrodeposited cu zn sn s precursor layers for solar cell applications
RSC Advances, 2014Co-Authors: Jiahua Tao, Lin Sun, Jinchun Jiang, Pingxiong Yang, Junfeng Liu, Kezhi Zhang, Junhao ChuAbstract:Cu2ZnSnS4 (CZTS) absorbers have been successfully deposited on tin-doped indium oxide coated glass (ITO/glass) substrates by Sulfurization process of co-electrodeposited Cu–Zn–Sn–S precursor thin films at various annealing temperatures ranging from 500 to 580 °C for 30 min in an atmosphere of Ar–H2S (6.5%). The effects of Sulfurization temperature on the structure, morphology, composition and optical properties of CZTS thin films have been investigated in details. XRD and Raman measurements reveal that the intensity of preferential orientation along the (112) direction becomes relatively more intense and sharp with increasing annealing temperature. The morphological and chemical composition studies indicate the formation of compact and homogenous CZTS thin films with Cu-poor and Zn-rich composition at a Sulfurization temperature of 560 °C. And its band gap energy is around 1.50 eV. The AZO/i-ZnO/CdS/CZTS/ITO/glass thin-film solar cell is fabricated with the CZTS absorber layer grown at an optimized Sulfurization temperature of 560 °C. It shows a power conversion efficiency of 1.98% for a 0.25 cm2 area with Voc = 490 mV, Jsc = 9.69 mA cm−2 and FF = 40.03%.
Pingxiong Yang - One of the best experts on this subject based on the ideXlab platform.
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effect of Sulfurization temperature on properties of cu2sns3 thin films and solar cells prepared by Sulfurization of stacked metallic precursors
Materials Science in Semiconductor Processing, 2015Co-Authors: Yuchen Dong, Lin Sun, Ye Chen, Pingxiong Yang, Junhao ChuAbstract:Abstract Cu2SnS3 (CTS) thin films were synthesized by the Sulfurization of stacked metallic precursor fabricated with a radio frequency magnetron sputtering method. The compositional, structural, morphological, optical and electrical properties of CTS thin films grown on soda lime glass substrates depend on the Sulfurization temperature. The compositional analysis shows that all samples are in Sn-rich state. The ratio of Cu/Sn is close to the stoichiometric composition of CTS with increasing Sulfurization temperature. The CTS thin films sulfurized at higher Sulfurization temperature have better crystalline quality from the results of structural characterization. The CTS thin film obtained at Sulfurization temperature 550 °C exhibits higher degree of crystallization with larger average grain size. The transmission and reflectance spectra demonstrate the band gap is around 1.0 eV, which is consistent with the estimation extrapolated from external quantum efficiency. The photoelectric properties of solar cell are enhanced with the increase of Sulfurization temperature. The solar cell fabricated with the CTS absorber layer annealed at 550 °C has the efficiency up to 0.28% for a 0.16 cm2 area.
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influence of Sulfurization pressure on cu2znsns4 thin films and solar cells prepared by Sulfurization of metallic precursors
Journal of Power Sources, 2015Co-Authors: Lin Sun, Ye Chen, Jinchun Jiang, Pingxiong Yang, Junhao ChuAbstract:Abstract Effects of Sulfurization pressure on composition, morphology and microstructure of kesterite Cu 2 ZnSnS 4 (CZTS) thin films obtained by Sulfurization of the metallic layers have been investigated in detail. It is found that the S content in the CZTS thin films is strongly dependent on the Sulfurization pressure. The CZTS thin films sulfurized under low Sulfurization pressure have S-poor state with a bilayer structure, while it exhibits sufficient amounts of sulfur under high Sulfurization pressure with grain growth throughout the entire absorber film. X-ray diffraction data indicate lower Sulfurization pressure during the CZTS grain growth process can induce the formation of more structural defects in the CZTS lattice and the CZTS thin films sulfurized under high Sulfurization pressure have more random orientation. Furthermore, ZnS and MoS 2 phase exist in all samples determined by Fourier transform infrared reflectance spectroscopy as complementary to Raman spectroscopy. The solar cell fabricated with the CZTS thin film under 10 Torr Sulfurization pressure shows the best conversion efficiency of 3.52% ( V OC = 484 mV, J SC = 14.56 mA cm −2 , FF = 50.1%).
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synthesis and characterization of cu2znsns4 thin films by the Sulfurization of co electrodeposited cu zn sn s precursor layers for solar cell applications
RSC Advances, 2014Co-Authors: Jiahua Tao, Lin Sun, Jinchun Jiang, Pingxiong Yang, Junfeng Liu, Kezhi Zhang, Junhao ChuAbstract:Cu2ZnSnS4 (CZTS) absorbers have been successfully deposited on tin-doped indium oxide coated glass (ITO/glass) substrates by Sulfurization process of co-electrodeposited Cu–Zn–Sn–S precursor thin films at various annealing temperatures ranging from 500 to 580 °C for 30 min in an atmosphere of Ar–H2S (6.5%). The effects of Sulfurization temperature on the structure, morphology, composition and optical properties of CZTS thin films have been investigated in details. XRD and Raman measurements reveal that the intensity of preferential orientation along the (112) direction becomes relatively more intense and sharp with increasing annealing temperature. The morphological and chemical composition studies indicate the formation of compact and homogenous CZTS thin films with Cu-poor and Zn-rich composition at a Sulfurization temperature of 560 °C. And its band gap energy is around 1.50 eV. The AZO/i-ZnO/CdS/CZTS/ITO/glass thin-film solar cell is fabricated with the CZTS absorber layer grown at an optimized Sulfurization temperature of 560 °C. It shows a power conversion efficiency of 1.98% for a 0.25 cm2 area with Voc = 490 mV, Jsc = 9.69 mA cm−2 and FF = 40.03%.
