The Experts below are selected from a list of 10131 Experts worldwide ranked by ideXlab platform
I. Suemune - One of the best experts on this subject based on the ideXlab platform.
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Transport Properties Of A Superconductor‐Semiconductor Junction With Superlattice Structure
2011Co-Authors: R. Inoue, Hideaki Takayanagi, Masafumi Jo, Tatsushi Akazaki, I. SuemuneAbstract:Transport properties of a superconductor‐semiconductor junction with Superlattice Structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio‐frequency (RF) waves. Experimental data are quantitatively explained by the coupling of superconducting quasiparticles with acoustic phonons excited by RF waves.
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transport properties of andreev polarons in a superconductor semiconductor superconductor junction with Superlattice Structure
Physical Review Letters, 2011Co-Authors: R. Inoue, Hideaki Takayanagi, Tatsushi Akazaki, Kenta Muranaga, Eiichi Hanamura, I. SuemuneAbstract:Transport properties of a superconductor-semiconductor-superconductor (Su-Sm-Su) junction with Superlattice Structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio-frequency (rf) waves with the specific frequency of 1.77 GHz regardless of the superconducting materials and the junction geometries. Experimental data are quantitatively explained in terms of the coupling of superconducting quasiparticles with long-wavelength acoustic phonons indirectly excited by the rf waves. We propose that the strong coupling causes the formation of novel composite particles, Andreev polarons.
Hideaki Takayanagi - One of the best experts on this subject based on the ideXlab platform.
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Transport Properties Of A Superconductor‐Semiconductor Junction With Superlattice Structure
2011Co-Authors: R. Inoue, Hideaki Takayanagi, Masafumi Jo, Tatsushi Akazaki, I. SuemuneAbstract:Transport properties of a superconductor‐semiconductor junction with Superlattice Structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio‐frequency (RF) waves. Experimental data are quantitatively explained by the coupling of superconducting quasiparticles with acoustic phonons excited by RF waves.
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transport properties of andreev polarons in a superconductor semiconductor superconductor junction with Superlattice Structure
Physical Review Letters, 2011Co-Authors: R. Inoue, Hideaki Takayanagi, Tatsushi Akazaki, Kenta Muranaga, Eiichi Hanamura, I. SuemuneAbstract:Transport properties of a superconductor-semiconductor-superconductor (Su-Sm-Su) junction with Superlattice Structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio-frequency (rf) waves with the specific frequency of 1.77 GHz regardless of the superconducting materials and the junction geometries. Experimental data are quantitatively explained in terms of the coupling of superconducting quasiparticles with long-wavelength acoustic phonons indirectly excited by the rf waves. We propose that the strong coupling causes the formation of novel composite particles, Andreev polarons.
L. Dal Negro - One of the best experts on this subject based on the ideXlab platform.
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Erbium-doped silicon nanocrystals in silicon/silicon nitride Superlattice Structures: Light emission and energy transfer
Physica E: Low-dimensional Systems and Nanostructures, 2009Co-Authors: J. Warga, Siddhartha Basu, L. Dal NegroAbstract:Abstract In this paper, we discuss optical emission, energy transfer and electroluminescence from a Superlattice Structure containing small (∼2 nm diameter) amorphous silicon (Si) clusters coupled to erbium (Er) ions. The Superlattice Structure is fabricated by direct co-sputtering of thin (∼3–5 nm) Er-doped silicon-rich nitride/Si (Er:SRN/Si) layers subsequently annealed at different temperatures in order to induce the nucleation of Si clusters and to activate Er emission. In this paper, we discuss efficient Er emission and sensitization with nanosecond-fast non-radiative transfer time and we report on low turn-on voltage (∼7 V) electroluminescence from simple electrical device Structures. Our results demonstrate that small Si clusters embedded in silicon nitride-based Superlattice Structures provide a viable approach for the fabrication of Si-compatible optical devices.
P. Shankar - One of the best experts on this subject based on the ideXlab platform.
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Superlattice Structure modelling and simulation of high electron mobility transistor with novel device Structure
Superlattices and Microstructures, 2015Co-Authors: M. Ravindiran, P. ShankarAbstract:Abstract High electron mobility transistor (HEMT) made of CNT channel with magnetic tunnel junctions inserted on both the sides of the channel region before source and drain region is analysed in this paper. The conductivity of the proposed Superlattice Structure with magnetic tunnel junction is very good when compared to Superlattice Structure without the magnetic tunnel junction. When fabricated as a HEMT the device will serve exceedingly well for various applications in electronics.
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Spintronic based Superlattice Structure modelling for photovoltaic application
Superlattices and Microstructures, 2014Co-Authors: M. Ravindiran, P. ShankarAbstract:Abstract This paper deals with the modelling and simulation of heterojunction photovoltaic (PV) device. An extensive comparative analysis of Superlattice photovoltaic device Structures made of N–Si/FeZnO/N–Si, N–Si/ZnO/N–Si and N–Si/P–Si model was done. Material studio software package has been used to analyze the performance of the above mentioned device Structures by using CASTEP simulation. CASTEP involves the Density Functional Theory (DFT) approach to calculate the properties such as absorption, conductivity, density of states (DOS) and band Structure. Simulation results reveal that N–Si/FeZnO/N–Si Superlattice Structure has improved absorption and conductivity when compared to the other two Structures. The similar Superlattice Structure may be also used in electronic device such as transistors without limiting it to photovoltaic.
R. Inoue - One of the best experts on this subject based on the ideXlab platform.
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Transport Properties Of A Superconductor‐Semiconductor Junction With Superlattice Structure
2011Co-Authors: R. Inoue, Hideaki Takayanagi, Masafumi Jo, Tatsushi Akazaki, I. SuemuneAbstract:Transport properties of a superconductor‐semiconductor junction with Superlattice Structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio‐frequency (RF) waves. Experimental data are quantitatively explained by the coupling of superconducting quasiparticles with acoustic phonons excited by RF waves.
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transport properties of andreev polarons in a superconductor semiconductor superconductor junction with Superlattice Structure
Physical Review Letters, 2011Co-Authors: R. Inoue, Hideaki Takayanagi, Tatsushi Akazaki, Kenta Muranaga, Eiichi Hanamura, I. SuemuneAbstract:Transport properties of a superconductor-semiconductor-superconductor (Su-Sm-Su) junction with Superlattice Structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio-frequency (rf) waves with the specific frequency of 1.77 GHz regardless of the superconducting materials and the junction geometries. Experimental data are quantitatively explained in terms of the coupling of superconducting quasiparticles with long-wavelength acoustic phonons indirectly excited by the rf waves. We propose that the strong coupling causes the formation of novel composite particles, Andreev polarons.