The Experts below are selected from a list of 327 Experts worldwide ranked by ideXlab platform
Susanne Stemmer - One of the best experts on this subject based on the ideXlab platform.
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Influence of plasma-based in-situ Surface Cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
Journal of Applied Physics, 2013Co-Authors: Varistha Chobpattana, Thomas E Mates, Jack Y Zhang, William J. Mitchell, Susanne StemmerAbstract:We report on the influence of variations in the process parameters of an in-situ Surface Cleaning procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO2 gate dielectrics deposited on n-In0.53Ga0.47As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and Surface morphology show that variations in the Cleaning process have a large effect on nucleation and Surface coverage, which in turn are crucial for achieving low interface state densities.
Hyungjun Kim - One of the best experts on this subject based on the ideXlab platform.
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In situ Surface Cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
Journal of Materials Chemistry C, 2015Co-Authors: Kangsik Kim, Zonghoon Lee, Jeong Gyu Song, Chang Wan Lee, David Thompson, Han-bo-ram Lee, Woo-hee Kim, Wan-joo Maeng, Hyungjun KimAbstract:Comparative studies of the in situ Surface Cleaning effect on Ge substrates using trimethyl aluminum (TMA) and dicyclopentadienyl magnesium (MgCp2) were performed. The Surface Cleaning process is the direct exposure of either a TMA or MgCp2 precursor on a Ge Surface prior to the deposition of a HfO2 gate dielectric. Also, we studied a HfO2/Al2O3 and MgO bilayer on uncleaned Ge using the same precursors for comparison with Surface treatment. From the correlation of chemical composition, line profile, atomic scale imaging and electrical evaluation, MgCp2 was the most effective method for reducing Ge diffusion into the HfO2 dielectric layer via the efficient Surface Cleaning process. MgCp2 Cleaning produces thermally-stable Ge oxides while TMA Cleaning reduces all types of Ge sub-oxides. As a result, the process can form a thermally-stable interface layer primarily composed of Ge3+, leading to better electrical properties than TMA.
Ivan Kalaykov - One of the best experts on this subject based on the ideXlab platform.
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SIRO: The silos Surface Cleaning robot concept
Mechatronics and Automation (ICMA), 2013 IEEE International Conference on, 2013Co-Authors: Kinan Dandan, Anani Ananiev, Ivan KalaykovAbstract:A concept of a suspended robot for Surface Cleaning in silos is presented in this paper. The main requirements and limitations resulting from the specific operational conditions are discussed. Due to the large dimension of the silo as a confined space, specific kinematics of the robot manipulator is proposed. The major problems in its design are highlighted and an approach to resolve them is proposed. The suggested concept is a reasonable compromise between the basic contradicting factors in the design: small entrance and large Surface of the confined space, suspension and stabilization of the robot.
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New concept of in-water Surface Cleaning robot
2013 IEEE International Conference on Mechatronics and Automation, 2013Co-Authors: Houssam Albitar, Anani Ananiev, Ivan KalaykovAbstract:This paper introduces a new concept of flexible crawling mechanism to design an industrial underwater Cleaning robot, which is evaluated from the viewpoint of the capability to work underwater, scanning the desired Surface, and bearing the reactions. This can be used as a robotic application in underwater Surface Cleaning and maintenance. We designed a robot that realizes the motion by contraction and extraction using DC-motors and vacuum technology. In this study we first focused on realizing the adhesion, bearing reactions, and achieving a stable locomotion on the Surface.
Valerii I. Bukhtiyarov - One of the best experts on this subject based on the ideXlab platform.
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Silicon Surface Cleaning using XeF2 gas treatment
Applied Surface Science, 1995Co-Authors: V.s. Aliev, M.r. Baklanov, Valerii I. BukhtiyarovAbstract:Abstract XeF 2 gas treatment has been studied with the aim of finding a new method of silicon Surface Cleaning. The clean silicon Surface is usually obtained by growing a thin oxidized layer on the substrate Surface. Then this layer is evaporated by in-situ annealing in ultra-high vacuum (UHV) conditions. In this work, instead of forming a thin oxidized layer, we produced SiF x ( x = 1, 2, 3) terminations on the silicon Surface treating the Surface with XeF 2 gas. The treatment in XeF 2 vapors cleaned the Si Surface from hydro-carbon contaminations so that silicon carbide is not formed on the Surface during annealing. The SiF x terminations were completely removed by annealing the Si sample at a temperature higher than 723 K in UHV conditions. After annealing we did not observe any polluting atoms on the Surface. Although the clean silicon Surface was obtained at a temperature of about 723 K, a high structural perfection of the Surface was observed only after additional annealing at 1023 K. This method of silicon Surface Cleaning, using treatment in XeF 2 gas, may be used in molecular beam epitaxy.
Varistha Chobpattana - One of the best experts on this subject based on the ideXlab platform.
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Influence of plasma-based in-situ Surface Cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
Journal of Applied Physics, 2013Co-Authors: Varistha Chobpattana, Thomas E Mates, Jack Y Zhang, William J. Mitchell, Susanne StemmerAbstract:We report on the influence of variations in the process parameters of an in-situ Surface Cleaning procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO2 gate dielectrics deposited on n-In0.53Ga0.47As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and Surface morphology show that variations in the Cleaning process have a large effect on nucleation and Surface coverage, which in turn are crucial for achieving low interface state densities.
