The Experts below are selected from a list of 2712 Experts worldwide ranked by ideXlab platform
Xiaozhong Zhang - One of the best experts on this subject based on the ideXlab platform.
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enhanced linear magnetoresistance of germanium at room temperature due to Surface Imperfection
Applied Physics Letters, 2015Co-Authors: Jiaojiao Chen, Hongguang Piao, Zhaochu Luo, Xiaozhong ZhangAbstract:We report an enhanced linear magnetoresistance in germanium at room temperature. The magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the magnetoresistance sensitivity at low fields (B < 0.4 T) can reach ∼8 T−1. It is found that this magnetoresistance effect is ascribed to Surface Imperfection, which cannot only increase the recombination rate but also enhance the inhomogeneity. Our work may be attractive to the magnetic-field sensing industry and make germanium-based magnetoelectronics further developed.
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Enhanced linear magnetoresistance of germanium at room temperature due to Surface Imperfection
Applied Physics Letters, 2015Co-Authors: Jiaojiao Chen, Hongguang Piao, Zhaochu Luo, Xiaozhong ZhangAbstract:We report an enhanced linear magnetoresistance in germanium at room temperature. The magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the magnetoresistance sensitivity at low fields (B
Jiaojiao Chen - One of the best experts on this subject based on the ideXlab platform.
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enhanced linear magnetoresistance of germanium at room temperature due to Surface Imperfection
Applied Physics Letters, 2015Co-Authors: Jiaojiao Chen, Hongguang Piao, Zhaochu Luo, Xiaozhong ZhangAbstract:We report an enhanced linear magnetoresistance in germanium at room temperature. The magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the magnetoresistance sensitivity at low fields (B < 0.4 T) can reach ∼8 T−1. It is found that this magnetoresistance effect is ascribed to Surface Imperfection, which cannot only increase the recombination rate but also enhance the inhomogeneity. Our work may be attractive to the magnetic-field sensing industry and make germanium-based magnetoelectronics further developed.
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Enhanced linear magnetoresistance of germanium at room temperature due to Surface Imperfection
Applied Physics Letters, 2015Co-Authors: Jiaojiao Chen, Hongguang Piao, Zhaochu Luo, Xiaozhong ZhangAbstract:We report an enhanced linear magnetoresistance in germanium at room temperature. The magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the magnetoresistance sensitivity at low fields (B
Hongguang Piao - One of the best experts on this subject based on the ideXlab platform.
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enhanced linear magnetoresistance of germanium at room temperature due to Surface Imperfection
Applied Physics Letters, 2015Co-Authors: Jiaojiao Chen, Hongguang Piao, Zhaochu Luo, Xiaozhong ZhangAbstract:We report an enhanced linear magnetoresistance in germanium at room temperature. The magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the magnetoresistance sensitivity at low fields (B < 0.4 T) can reach ∼8 T−1. It is found that this magnetoresistance effect is ascribed to Surface Imperfection, which cannot only increase the recombination rate but also enhance the inhomogeneity. Our work may be attractive to the magnetic-field sensing industry and make germanium-based magnetoelectronics further developed.
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Enhanced linear magnetoresistance of germanium at room temperature due to Surface Imperfection
Applied Physics Letters, 2015Co-Authors: Jiaojiao Chen, Hongguang Piao, Zhaochu Luo, Xiaozhong ZhangAbstract:We report an enhanced linear magnetoresistance in germanium at room temperature. The magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the magnetoresistance sensitivity at low fields (B
Zhaochu Luo - One of the best experts on this subject based on the ideXlab platform.
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enhanced linear magnetoresistance of germanium at room temperature due to Surface Imperfection
Applied Physics Letters, 2015Co-Authors: Jiaojiao Chen, Hongguang Piao, Zhaochu Luo, Xiaozhong ZhangAbstract:We report an enhanced linear magnetoresistance in germanium at room temperature. The magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the magnetoresistance sensitivity at low fields (B < 0.4 T) can reach ∼8 T−1. It is found that this magnetoresistance effect is ascribed to Surface Imperfection, which cannot only increase the recombination rate but also enhance the inhomogeneity. Our work may be attractive to the magnetic-field sensing industry and make germanium-based magnetoelectronics further developed.
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Enhanced linear magnetoresistance of germanium at room temperature due to Surface Imperfection
Applied Physics Letters, 2015Co-Authors: Jiaojiao Chen, Hongguang Piao, Zhaochu Luo, Xiaozhong ZhangAbstract:We report an enhanced linear magnetoresistance in germanium at room temperature. The magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the magnetoresistance sensitivity at low fields (B
Noriaki Itoh - One of the best experts on this subject based on the ideXlab platform.
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laser induced sputtering of ga0 and ga from the gap 110 Surface its relation to Surface Imperfection
Applied Physics Letters, 1990Co-Authors: Yasuo Nakai, Ken Hattori, Noriaki ItohAbstract:We have measured emission of Ga+ ions and neutral Ga0 atoms induced by irradiation of the GaP (110) Surface with laser pulses of subband‐gap energies. It is found that the Ga+ yield of partially annealed Ar+ ion bombarded Surfaces is reduced by thermal annealing and also by repeated irradiation with laser pulses, while the Ga0 yield is not influenced to an important extent by these treatments. The Ga+ emission, which occurs at a lower fluence than Ga0 emission, is ascribed to emission from defect sites at Surfaces. We suggest that measurements of laser‐induced particle emission for subband‐gap energies will be useful for detection and elimination of low‐density defects on Surfaces.