The Experts below are selected from a list of 258 Experts worldwide ranked by ideXlab platform
George E. Georghiou - One of the best experts on this subject based on the ideXlab platform.
-
temperature and Thermal Annealing effects on different photovoltaic technologies
Renewable Energy, 2012Co-Authors: George Makrides, Bastian Zinsser, Alexander Phinikarides, M B Schubert, George E. GeorghiouAbstract:Abstract The effect of temperature on different grid-connected photovoltaic (PV) technologies installed in Cyprus was analyzed in this study. Initially, the performance losses due to the temperature effect on the annual energy yield of each technology were investigated using measurements of module temperature and the manufacturer provided maximum power point (MPP) temperature coefficients, γPMPP. The same methodology was also applied using outdoor evaluated γPMPP coefficients for comparison. When using the manufacturer’s temperature coefficient, the results showed that over the evaluation period the highest average Thermal losses in annual dc energy yield were 8% for mono-crystalline silicon (mono-c-Si) and 9% for multi-crystalline silicon (multi-c-Si) technologies while for thin-film technologies, the average losses were 5%. Similar losses were found when using the outdoor evaluated temperature coefficients. Additionally, temperature effects on the seasonal performance of the different technologies were evident on the monthly average performance ratio (PR). For the amorphous silicon (a-Si) technologies, a performance increase from spring until early autumn was observed and was attributed to Thermal Annealing. The effect of Thermal Annealing on the performance was evident by filtering dc MPP power measurements at high irradiance (greater than 800 W/m2) and restricting the values at geometric air mass (AM) in the range 1 ≤ geometric AM ≤ 1.5. The extracted dc MPP power was corrected for irradiance and temperature at standard test conditions (STC) using the manufacturer provided γPMPP over a period of two years. Subsequently, the effect of Thermal Annealing was further investigated by extracting dc MPP power measurements at geometric AM in the range 1.4 ≤ geometric AM ≤ 1.6 in order to minimize the spectral influences on the performance of a-Si technologies. An increase in power for all the a-Si technologies was obvious during the warm summer season and was recorded over the period of March until September for both years.
-
Temperature and Thermal Annealing Effects on Amorphous Silicon PV
2011Co-Authors: George E. Georghiou, Markus Schubert, Alexander Phinikarides, Bastian Zinsser, George MakridesAbstract:The effect of temperature on a single-junction a-Si, grid-connected, photovoltaic (PV) system installed in Cyprus was analysed in this study. Initially, the energy yield losses due to temperature were investigated based on acquired measurements of module temperature and using the manufacturer’s maximum power point (MPP) temperature coefficients, γPMPP. The same Thermal loss investigation was also carried out, using the experimentally evaluated γPMPP coefficients for comparison. In the case of the manufacturer’s γPMPP, the results showed that the Thermal losses in the annual dc energy yield were 3 4 %. Similar Thermal losses were found when using the experimentally evaluated γPMPP. In addition, temperature effects on the seasonal performance were evident on the monthly average performance ratio (PR) values. An increase in performance from spring until early autumn was observed and was attributed to Thermal Annealing. The effect of Thermal Annealing on the performance was revealed by filtering dc MPP power measurements at high irradiance (greater than 800 W/m) and restricting the values at geometric air mass (AM) in the range 1 ≤ geometric AM ≤ 1.5. The extracted dc MPP power was corrected for irradiance and temperature at standard test conditions (STC) using the manufacturer’s γPMPP for a period of two years. The effect of Thermal Annealing was further investigated by extracting dc MPP power measurements at geometric AM in the range 1.4 ≤ geometric AM ≤ 1.6 in order to minimize the spectral effects on the performance of the a-Si system. The results showed that Thermal Annealing caused a 7.5 % increase in power from March to September 2008 and a 7 % increase for the same period in 2009.
Qixin Guo - One of the best experts on this subject based on the ideXlab platform.
-
Thermal Annealing impact on crystal quality of (GaIn)2O3 alloys
Journal of Alloys and Compounds, 2014Co-Authors: Fabi Zhang, Mitsuhiro Nishio, Tooru Tanaka, Katsuhiko Saito, Qixin GuoAbstract:Abstract In this study, we investigated the phase separation phenomenon and post Thermal Annealing effects on the (GaIn)2O3 films deposited on sapphire substrates by pulsed laser deposition. Films grown at substrate temperature higher than 300 °C showed phase separation while films grown at substrate temperature lower than 200 °C revealed homogenous elements distributions with amorphous structure. Thermal Annealing had no obvious effects on (GaIn)2O3 films grown at substrate temperature higher than 300 °C. The clusters remained on the surface of the films after Thermal Annealing treatment. On the other hand, however, by Thermal Annealing the film deposited at room temperature, (GaIn)2O3 film with smooth surface, homogenous element distribution, high orientation crystal and high optical transmittance observed by means of scanning electron microscope, energy dispersive spectrometer, X-ray diffraction and spectrophotometer was successfully obtained, paving a way for obtaining high quality (GaIn)2O3 film without phase separation.
-
Recovery from Dry Etching Damage in ZnTe by Thermal Annealing
Japanese Journal of Applied Physics, 2005Co-Authors: Qixin Guo, Yusukei Kume, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi OgawaAbstract:Thermal Annealing has been applied to the recovery from dry-etch-induced damage on ZnTe surfaces. We have demonstrated that the optical property of dry-etched ZnTe can be fully recovered by Thermal Annealing at temperatures above 300°C for 10 min, indicating that Thermal Annealing can eliminate the damage on ZnTe induced during reactive ion etching.
Sun Yan-zheng - One of the best experts on this subject based on the ideXlab platform.
-
Study of diffusion energy of strain quantum well with Thermal Annealing
Chinese Journal of Power Sources, 2009Co-Authors: Sun Yan-zhengAbstract:Effect of Thermal Annealing on the strain quantum well which can be used in solar cells is researched.A new method that can be used to fit the diffusion energy of strain quantum well with Thermal Annealing is gain.The theory and experimental results match well.
A. Morales–sánchez - One of the best experts on this subject based on the ideXlab platform.
-
Effect of the Thermal Annealing on the structural, morphological and photoluminescent properties of ZnO/Si multilayers
Optical Materials, 2019Co-Authors: Roberto Ambrosio, F. Galindo, F. Morales–morales, M. C. Marquez Moreno, Asunción Torres, M.a. Vásquez-a, S. A. Perez Garcia, A. Morales–sánchezAbstract:Abstract In this work, multilayers (MLs) thin films composed of ten bilayers of ZnO/Si with high photoluminescence (PL) were deposited by RF-Sputtering and Thermally annealed at different temperature. The composition, surface morphology, structural and PL properties of ZnO/Si MLs were studied as a function of the Annealing temperature. The ZnO/Si ML structure was corroborated, in the as-deposited sample, by the analysis of its chemical composition in depth profile done by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) images show a smooth surface of the ZnO/Si ML before Thermal Annealing, but the formation of surface nano-spheres with a diameter of about 63.4 ± 1.36 nm and 132.4 ± 2.44 nm after Thermal Annealing at 900 °C and 1000 °C, respectively. Si:ZnOy nanospheres are grown on a Zn:SiOx film after the Thermal Annealing, as analyzed by XPS in depth profile. X-ray diffraction (XRD) shows a high crystallinity with the temperature and the XRD peaks observed are related to Si–ZnO and Zn2SiO4 composites, especially at 1000 °C. The luminescent studies reveal that the samples have an intense and broad PL emission after Thermal Annealing, observed with the naked eye. Moreover, the presence of nanospheres combined with the different defects associated to ZnO and SiOx enhances the PL intensity up to 995-fold as compared to that ZnO/Si ML without Thermal Annealing. Therefore, this type of multilayer films are potential candidates for their application in light emitting devices.
George Makrides - One of the best experts on this subject based on the ideXlab platform.
-
temperature and Thermal Annealing effects on different photovoltaic technologies
Renewable Energy, 2012Co-Authors: George Makrides, Bastian Zinsser, Alexander Phinikarides, M B Schubert, George E. GeorghiouAbstract:Abstract The effect of temperature on different grid-connected photovoltaic (PV) technologies installed in Cyprus was analyzed in this study. Initially, the performance losses due to the temperature effect on the annual energy yield of each technology were investigated using measurements of module temperature and the manufacturer provided maximum power point (MPP) temperature coefficients, γPMPP. The same methodology was also applied using outdoor evaluated γPMPP coefficients for comparison. When using the manufacturer’s temperature coefficient, the results showed that over the evaluation period the highest average Thermal losses in annual dc energy yield were 8% for mono-crystalline silicon (mono-c-Si) and 9% for multi-crystalline silicon (multi-c-Si) technologies while for thin-film technologies, the average losses were 5%. Similar losses were found when using the outdoor evaluated temperature coefficients. Additionally, temperature effects on the seasonal performance of the different technologies were evident on the monthly average performance ratio (PR). For the amorphous silicon (a-Si) technologies, a performance increase from spring until early autumn was observed and was attributed to Thermal Annealing. The effect of Thermal Annealing on the performance was evident by filtering dc MPP power measurements at high irradiance (greater than 800 W/m2) and restricting the values at geometric air mass (AM) in the range 1 ≤ geometric AM ≤ 1.5. The extracted dc MPP power was corrected for irradiance and temperature at standard test conditions (STC) using the manufacturer provided γPMPP over a period of two years. Subsequently, the effect of Thermal Annealing was further investigated by extracting dc MPP power measurements at geometric AM in the range 1.4 ≤ geometric AM ≤ 1.6 in order to minimize the spectral influences on the performance of a-Si technologies. An increase in power for all the a-Si technologies was obvious during the warm summer season and was recorded over the period of March until September for both years.
-
Temperature and Thermal Annealing Effects on Amorphous Silicon PV
2011Co-Authors: George E. Georghiou, Markus Schubert, Alexander Phinikarides, Bastian Zinsser, George MakridesAbstract:The effect of temperature on a single-junction a-Si, grid-connected, photovoltaic (PV) system installed in Cyprus was analysed in this study. Initially, the energy yield losses due to temperature were investigated based on acquired measurements of module temperature and using the manufacturer’s maximum power point (MPP) temperature coefficients, γPMPP. The same Thermal loss investigation was also carried out, using the experimentally evaluated γPMPP coefficients for comparison. In the case of the manufacturer’s γPMPP, the results showed that the Thermal losses in the annual dc energy yield were 3 4 %. Similar Thermal losses were found when using the experimentally evaluated γPMPP. In addition, temperature effects on the seasonal performance were evident on the monthly average performance ratio (PR) values. An increase in performance from spring until early autumn was observed and was attributed to Thermal Annealing. The effect of Thermal Annealing on the performance was revealed by filtering dc MPP power measurements at high irradiance (greater than 800 W/m) and restricting the values at geometric air mass (AM) in the range 1 ≤ geometric AM ≤ 1.5. The extracted dc MPP power was corrected for irradiance and temperature at standard test conditions (STC) using the manufacturer’s γPMPP for a period of two years. The effect of Thermal Annealing was further investigated by extracting dc MPP power measurements at geometric AM in the range 1.4 ≤ geometric AM ≤ 1.6 in order to minimize the spectral effects on the performance of the a-Si system. The results showed that Thermal Annealing caused a 7.5 % increase in power from March to September 2008 and a 7 % increase for the same period in 2009.