The Experts below are selected from a list of 5502 Experts worldwide ranked by ideXlab platform
Young-hwan Choi - One of the best experts on this subject based on the ideXlab platform.
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High voltage AlGaN/GaN HFET employing low Taper Angle field-plate for stable forward blocking capability
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014Co-Authors: In-hwan Ji, Sizhen Wang, Veena Misra, Alex Q. Huang, Young-hwan ChoiAbstract:A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low Taper Angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new Taper etching process, exhibits stable forward blocking capability with low leakage current (2 orders of magnitude smaller) under repetitive high voltage stress, whereas the conventional device with steep FP of 70 degree shows that unstable behavior under the same stress. These experimental results indicate that the proposed LTA-FP suppresses the electric field concentration at the gate edge successfully and is an effective approach to secure the stable blocking characteristics of GaN based high voltage devices.
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high voltage algan gan hfet employing low Taper Angle field plate for stable forward blocking capability
International Symposium on Power Semiconductor Devices and IC's, 2014Co-Authors: In-hwan Ji, Sizhen Wang, Veena Misra, Alex Q. Huang, Young-hwan ChoiAbstract:A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low Taper Angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new Taper etching process, exhibits stable forward blocking capability with low leakage current (2 orders of magnitude smaller) under repetitive high voltage stress, whereas the conventional device with steep FP of 70 degree shows that unstable behavior under the same stress. These experimental results indicate that the proposed LTA-FP suppresses the electric field concentration at the gate edge successfully and is an effective approach to secure the stable blocking characteristics of GaN based high voltage devices.
In-hwan Ji - One of the best experts on this subject based on the ideXlab platform.
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High voltage AlGaN/GaN HFET employing low Taper Angle field-plate for stable forward blocking capability
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014Co-Authors: In-hwan Ji, Sizhen Wang, Veena Misra, Alex Q. Huang, Young-hwan ChoiAbstract:A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low Taper Angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new Taper etching process, exhibits stable forward blocking capability with low leakage current (2 orders of magnitude smaller) under repetitive high voltage stress, whereas the conventional device with steep FP of 70 degree shows that unstable behavior under the same stress. These experimental results indicate that the proposed LTA-FP suppresses the electric field concentration at the gate edge successfully and is an effective approach to secure the stable blocking characteristics of GaN based high voltage devices.
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high voltage algan gan hfet employing low Taper Angle field plate for stable forward blocking capability
International Symposium on Power Semiconductor Devices and IC's, 2014Co-Authors: In-hwan Ji, Sizhen Wang, Veena Misra, Alex Q. Huang, Young-hwan ChoiAbstract:A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low Taper Angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new Taper etching process, exhibits stable forward blocking capability with low leakage current (2 orders of magnitude smaller) under repetitive high voltage stress, whereas the conventional device with steep FP of 70 degree shows that unstable behavior under the same stress. These experimental results indicate that the proposed LTA-FP suppresses the electric field concentration at the gate edge successfully and is an effective approach to secure the stable blocking characteristics of GaN based high voltage devices.
Barbara A Bekins - One of the best experts on this subject based on the ideXlab platform.
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hydromechanics of a high Taper Angle low permeability prism a case study from peru
Journal of Geophysical Research, 2006Co-Authors: Dorit Matmon, Barbara A BekinsAbstract:[1] The Peru frontal prism represents a contrasting hydrologic setting to the better characterized systems of Nankai and Barbados. The high Taper Angle and convergence rate result in rapid burial of low-permeability sediments. Critical Taper stability calculations were combined with a flow model to understand how a steep Taper Angle could be stable under these conditions. Constant rate flow tests of the slope and prism sediments gave permeability values ranging from a low of ∼10−18 m2 to a high of ∼10−16 m2. Estimated compaction fluid sources exceed 5 × 10−13 s−1 near the toe and remain above 10−14 s−1 for 20 km arcward in the underthrust sediments. These data were used to constrain a two-dimensional, steady state model of pore pressure along a cross section at 9°S. The model domain is composed of a 15-km-wide frontal prism with a crystalline buttress at the back and 500 m of permeable basement at the base. The combined mechanical stability and flow model analysis yielded a feasible basement permeability of ∼10−16 m2 and a decollement permeability range of 10−15–10−17 m2. The model results demonstrate that basement flow and use of different pressure ratio values for the wedge and the base in stability calculations are important for systems with steep Taper Angles.
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Hydromechanics of a high Taper Angle, low‐permeability prism: A case study from Peru
Journal of Geophysical Research, 2006Co-Authors: Dorit Matmon, Barbara A BekinsAbstract:[1] The Peru frontal prism represents a contrasting hydrologic setting to the better characterized systems of Nankai and Barbados. The high Taper Angle and convergence rate result in rapid burial of low-permeability sediments. Critical Taper stability calculations were combined with a flow model to understand how a steep Taper Angle could be stable under these conditions. Constant rate flow tests of the slope and prism sediments gave permeability values ranging from a low of ∼10−18 m2 to a high of ∼10−16 m2. Estimated compaction fluid sources exceed 5 × 10−13 s−1 near the toe and remain above 10−14 s−1 for 20 km arcward in the underthrust sediments. These data were used to constrain a two-dimensional, steady state model of pore pressure along a cross section at 9°S. The model domain is composed of a 15-km-wide frontal prism with a crystalline buttress at the back and 500 m of permeable basement at the base. The combined mechanical stability and flow model analysis yielded a feasible basement permeability of ∼10−16 m2 and a decollement permeability range of 10−15–10−17 m2. The model results demonstrate that basement flow and use of different pressure ratio values for the wedge and the base in stability calculations are important for systems with steep Taper Angles.
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An evaluation of factors influencing pore pressure in accretionary complexes: Implications for Taper Angle and wedge mechanics
Journal of Geophysical Research, 2006Co-Authors: Demian M. Saffer, Barbara A BekinsAbstract:[1] At many subduction zones, accretionary complexes form as sediment is off-scraped from the subducting plate. Mechanical models that treat accretionary complexes as critically Tapered wedges of sediment demonstrate that pore pressure controls their Taper Angle by modifying basal and internal shear strength. Here, we combine a numerical model of groundwater flow with critical Taper theory to quantify the effects of sediment and decollement permeability, sediment thickness, sediment partitioning between accretion and underthrusting, and plate convergence rate on steady state pore pressure. Our results show that pore pressure in accretionary wedges can be viewed as a dynamically maintained response to factors which drive pore pressure (source terms) and those that limit flow (permeability and drainage path length). We find that sediment permeability and incoming sediment thickness are the most important factors, whereas fault permeability and the partitioning of sediment have a small effect. For our base case model scenario, as sediment permeability is increased, pore pressure decreases from near-lithostatic to hydrostatic values and allows stable Taper Angles to increase from ∼2.5° to 8°–12.5°. With increased sediment thickness in our models (from 100 to 8000 m), increased pore pressure drives a decrease in stable Taper Angle from 8.4°–12.5° to 15° to
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an evaluation of factors influencing pore pressure in accretionary complexes implications for Taper Angle and wedge mechanics
Journal of Geophysical Research, 2006Co-Authors: Demian M. Saffer, Barbara A BekinsAbstract:[1] At many subduction zones, accretionary complexes form as sediment is off-scraped from the subducting plate. Mechanical models that treat accretionary complexes as critically Tapered wedges of sediment demonstrate that pore pressure controls their Taper Angle by modifying basal and internal shear strength. Here, we combine a numerical model of groundwater flow with critical Taper theory to quantify the effects of sediment and decollement permeability, sediment thickness, sediment partitioning between accretion and underthrusting, and plate convergence rate on steady state pore pressure. Our results show that pore pressure in accretionary wedges can be viewed as a dynamically maintained response to factors which drive pore pressure (source terms) and those that limit flow (permeability and drainage path length). We find that sediment permeability and incoming sediment thickness are the most important factors, whereas fault permeability and the partitioning of sediment have a small effect. For our base case model scenario, as sediment permeability is increased, pore pressure decreases from near-lithostatic to hydrostatic values and allows stable Taper Angles to increase from ∼2.5° to 8°–12.5°. With increased sediment thickness in our models (from 100 to 8000 m), increased pore pressure drives a decrease in stable Taper Angle from 8.4°–12.5° to 15° to <4°) with increased sediment thickness (from <1 to 7 km). One key implication is that hydrologic properties may strongly influence the strength of the crust in a wide range of geologic settings.
Sizhen Wang - One of the best experts on this subject based on the ideXlab platform.
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High voltage AlGaN/GaN HFET employing low Taper Angle field-plate for stable forward blocking capability
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014Co-Authors: In-hwan Ji, Sizhen Wang, Veena Misra, Alex Q. Huang, Young-hwan ChoiAbstract:A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low Taper Angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new Taper etching process, exhibits stable forward blocking capability with low leakage current (2 orders of magnitude smaller) under repetitive high voltage stress, whereas the conventional device with steep FP of 70 degree shows that unstable behavior under the same stress. These experimental results indicate that the proposed LTA-FP suppresses the electric field concentration at the gate edge successfully and is an effective approach to secure the stable blocking characteristics of GaN based high voltage devices.
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high voltage algan gan hfet employing low Taper Angle field plate for stable forward blocking capability
International Symposium on Power Semiconductor Devices and IC's, 2014Co-Authors: In-hwan Ji, Sizhen Wang, Veena Misra, Alex Q. Huang, Young-hwan ChoiAbstract:A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low Taper Angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new Taper etching process, exhibits stable forward blocking capability with low leakage current (2 orders of magnitude smaller) under repetitive high voltage stress, whereas the conventional device with steep FP of 70 degree shows that unstable behavior under the same stress. These experimental results indicate that the proposed LTA-FP suppresses the electric field concentration at the gate edge successfully and is an effective approach to secure the stable blocking characteristics of GaN based high voltage devices.
Veena Misra - One of the best experts on this subject based on the ideXlab platform.
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High voltage AlGaN/GaN HFET employing low Taper Angle field-plate for stable forward blocking capability
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014Co-Authors: In-hwan Ji, Sizhen Wang, Veena Misra, Alex Q. Huang, Young-hwan ChoiAbstract:A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low Taper Angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new Taper etching process, exhibits stable forward blocking capability with low leakage current (2 orders of magnitude smaller) under repetitive high voltage stress, whereas the conventional device with steep FP of 70 degree shows that unstable behavior under the same stress. These experimental results indicate that the proposed LTA-FP suppresses the electric field concentration at the gate edge successfully and is an effective approach to secure the stable blocking characteristics of GaN based high voltage devices.
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high voltage algan gan hfet employing low Taper Angle field plate for stable forward blocking capability
International Symposium on Power Semiconductor Devices and IC's, 2014Co-Authors: In-hwan Ji, Sizhen Wang, Veena Misra, Alex Q. Huang, Young-hwan ChoiAbstract:A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low Taper Angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new Taper etching process, exhibits stable forward blocking capability with low leakage current (2 orders of magnitude smaller) under repetitive high voltage stress, whereas the conventional device with steep FP of 70 degree shows that unstable behavior under the same stress. These experimental results indicate that the proposed LTA-FP suppresses the electric field concentration at the gate edge successfully and is an effective approach to secure the stable blocking characteristics of GaN based high voltage devices.
