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K. Tanabe - One of the best experts on this subject based on the ideXlab platform.
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Development of inside-plume PLD process for the fabrication of large Ic(B) REBCO tapes
Physica C-superconductivity and Its Applications, 2009Co-Authors: Noriko Chikumoto, Stephen Lee, Koichi Nakao, K. TanabeAbstract:Abstract We developed an inside-plume pulsed laser deposition (IP-PLD) technique which has enabled high-rate fabrication of Gd-Ba-Cu-O (GdBCO) tapes with improved transport current capability. The main idea of the IP-PLD technique is to increase the deposition rate simply by reducing the substrate-to-Target (ST) distance and to employ very high laser energy density, >0.035 J/mm 2 . As a result, the production rate increased up to about three times higher than that for the conventional PLD method. We also showed that the IP-PLD requires appropriate adjustment of the Target Composition to obtain an optimal Composition in the tape. By optimizing the Target Composition and adding BaZrO 3 pinning centers, we obtained very high I c values at 77 K of 700–1000 A/cm-w (s.f.) and 135 A/cm-w ( B = 3 T ( B ‖ c )) for short samples with an about 5 μm-thick GdBCO layer.
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Effect of Target Composition on properties of NdBa2Cu3O7−δ superconducting thin films grown by pulsed laser deposition: A comparative study
Journal of Applied Physics, 1998Co-Authors: K. TanabeAbstract:High quality epitaxial NdBa2Cu3O7−δ (NBCO) superconducting thin films have been deposited on SrTiO3 (100), LaAlO3 (100), and NdGaO3 (110) substrates by pulsed laser deposition using slightly Ba-rich Nd1−xBa2+xCu3O7−δ (x=0.00, 0.03, 0.05, and 0.10) Targets. The influence of Target Composition on the properties of thin films, including superconductivity, epitaxial structure, and surface morphology have been systematically investigated. In both four-probe and dc magnetization measurements, the Tc0 of 91–93 K is routinely achieved from Targets with x=0.00, 0.03, and 0.05. The highest is 94 K for the films corresponding to the Target of Nd0.97Ba2.03Cu3O7−δ. The critical current density Jc in a 1000 A thick, 5 μm wide bridge is 3.8×106 A/cm2 at 77 K in zero magnetic field. X-ray diffraction (XRD) analysis demonstrates that the structure of films sensitively depends on the substrate deposition temperature. When the substrate deposition temperature decreases from 900 to 800 °C, the orientation of NBCO films gradu...
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effect of Target Composition on properties of ndba2cu3o7 δ superconducting thin films grown by pulsed laser deposition a comparative study
Journal of Applied Physics, 1998Co-Authors: K. TanabeAbstract:High quality epitaxial NdBa2Cu3O7−δ (NBCO) superconducting thin films have been deposited on SrTiO3 (100), LaAlO3 (100), and NdGaO3 (110) substrates by pulsed laser deposition using slightly Ba-rich Nd1−xBa2+xCu3O7−δ (x=0.00, 0.03, 0.05, and 0.10) Targets. The influence of Target Composition on the properties of thin films, including superconductivity, epitaxial structure, and surface morphology have been systematically investigated. In both four-probe and dc magnetization measurements, the Tc0 of 91–93 K is routinely achieved from Targets with x=0.00, 0.03, and 0.05. The highest is 94 K for the films corresponding to the Target of Nd0.97Ba2.03Cu3O7−δ. The critical current density Jc in a 1000 A thick, 5 μm wide bridge is 3.8×106 A/cm2 at 77 K in zero magnetic field. X-ray diffraction (XRD) analysis demonstrates that the structure of films sensitively depends on the substrate deposition temperature. When the substrate deposition temperature decreases from 900 to 800 °C, the orientation of NBCO films gradu...
Alberto Piqué - One of the best experts on this subject based on the ideXlab platform.
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Transparent conducting F-doped SnO2 thin films grown by pulsed laser deposition
Thin Solid Films, 2008Co-Authors: Hyunsoo Kim, Raymond C. Y. Auyeung, Alberto PiquéAbstract:Transparent conducting fluorine-doped tin oxide (SnO2:F) films have been deposited on glass substrates by pulsed laser deposition. The structural, electrical and optical properties of the SnO2:F films have been investigated as a function of F-doping level and substrate deposition temperature. The optimum Target Composition for high conductivity was found to be 10 wt.% SnF2 + 90 wt.% SnO2. Under optimized deposition conditions (Ts = 300 °C, and 7.33 Pa of O2), electrical resistivity of 5 × 10- 4 Ω-cm, sheet resistance of 12.5 Ω/□, average optical transmittance of 87% in the visible range, and optical band-gap of 4.25 eV were obtained for 400 nm thick SnO2:F films. Atomic force microscopy measurements for these SnO2:F films indicated that their root-mean-square surface roughness (∼ 6 Å) was superior to that of commercially available chemical vapor deposited SnO2:F films (∼ 85 Å).
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electrical optical and structural properties of indium tin oxide thin films for organic light emitting devices
Journal of Applied Physics, 1999Co-Authors: C M Gilmore, Alberto Piqué, J S Horwitz, Hedi Mattoussi, Hideyuki Murata, Zakya H Kafafi, D B ChriseyAbstract:High-quality indium–tin–oxide (ITO) thin films (200–850 nm) have been grown by pulsed laser deposition (PLD) on glass substrates without a postdeposition annealing treatment. The structural, electrical, and optical properties of these films have been investigated as a function of Target Composition, substrate deposition temperature, background gas pressure, and film thickness. Films were deposited from various Target Compositions ranging from 0 to 15 wt % of SnO2 content. The optimum Target Composition for high conductivity was 5 wt % SnO2+95 wt % In2O3. Films were deposited at substrate temperatures ranging from room temperature to 300 °C in O2 partial pressures ranging from 1 to 100 mTorr. Films were deposited using a KrF excimer laser (248 nm, 30 ns full width at half maximum) at a fluence of 2 J/cm2. For a 150-nm-thick ITO film grown at room temperature in an oxygen pressure of 10 mTorr, the resistivity was 4×10−4 Ω cm and the average transmission in the visible range (400–700 nm) was 85%. For a 170-n...
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Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices
Journal of Applied Physics, 1999Co-Authors: H. Kim, Alberto Piqué, C M Gilmore, J S Horwitz, Hedi Mattoussi, Hideyuki Murata, Zakya H Kafafi, D B ChriseyAbstract:High-quality indium–tin–oxide (ITO) thin films (200–850 nm) have been grown by pulsed laser deposition (PLD) on glass substrates without a postdeposition annealing treatment. The structural, electrical, and optical properties of these films have been investigated as a function of Target Composition, substrate deposition temperature, background gas pressure, and film thickness. Films were deposited from various Target Compositions ranging from 0 to 15 wt % of SnO2 content. The optimum Target Composition for high conductivity was 5 wt % SnO2+95 wt % In2O3. Films were deposited at substrate temperatures ranging from room temperature to 300 °C in O2 partial pressures ranging from 1 to 100 mTorr. Films were deposited using a KrF excimer laser (248 nm, 30 ns full width at half maximum) at a fluence of 2 J/cm2. For a 150-nm-thick ITO film grown at room temperature in an oxygen pressure of 10 mTorr, the resistivity was 4×10−4 Ω cm and the average transmission in the visible range (400–700 nm) was 85%. For a 170-n...
C. M. Julien - One of the best experts on this subject based on the ideXlab platform.
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Pulsed-laser deposited LiNi0.8Co0.15Al0.05O2 thin films for application in microbatteries
Applied Physics Letters, 2007Co-Authors: C. V. Ramana, K. Zaghib, C. M. JulienAbstract:LiNi0.8Co0.15Al0.05O2 thin films were prepared by pulsed-laser deposition at varying growth conditions. It was found that the growth and microstructure of the films is highly dependent on the Target Composition, deposition temperature, and the reactive atmosphere during laser ablation. The x-ray diffraction and Raman spectroscopic measurements indicated the high-structural quality of the grown LiNi0.8Co0.15Al0.05O2 thin films. A phase diagram mapping the effect of temperature on the microstructure of LiNi0.8Co0.15Al0.05O2 thin films has been proposed. The measurements of charge-discharge profiles of Li microcells using the LiNi0.8Co0.15Al0.05O2 films grown at 450 degrees C demonstrate their possible applications in microbatteries. A stable capacity of 98 mu A h/cm(2) mu m was obtained in the potential range of 4.2-2.5 V for LiNi0.8Co0.15Al0.05O2 films grown at 450 degrees C.
D B Chrisey - One of the best experts on this subject based on the ideXlab platform.
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electrical optical and structural properties of indium tin oxide thin films for organic light emitting devices
Journal of Applied Physics, 1999Co-Authors: C M Gilmore, Alberto Piqué, J S Horwitz, Hedi Mattoussi, Hideyuki Murata, Zakya H Kafafi, D B ChriseyAbstract:High-quality indium–tin–oxide (ITO) thin films (200–850 nm) have been grown by pulsed laser deposition (PLD) on glass substrates without a postdeposition annealing treatment. The structural, electrical, and optical properties of these films have been investigated as a function of Target Composition, substrate deposition temperature, background gas pressure, and film thickness. Films were deposited from various Target Compositions ranging from 0 to 15 wt % of SnO2 content. The optimum Target Composition for high conductivity was 5 wt % SnO2+95 wt % In2O3. Films were deposited at substrate temperatures ranging from room temperature to 300 °C in O2 partial pressures ranging from 1 to 100 mTorr. Films were deposited using a KrF excimer laser (248 nm, 30 ns full width at half maximum) at a fluence of 2 J/cm2. For a 150-nm-thick ITO film grown at room temperature in an oxygen pressure of 10 mTorr, the resistivity was 4×10−4 Ω cm and the average transmission in the visible range (400–700 nm) was 85%. For a 170-n...
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Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices
Journal of Applied Physics, 1999Co-Authors: H. Kim, Alberto Piqué, C M Gilmore, J S Horwitz, Hedi Mattoussi, Hideyuki Murata, Zakya H Kafafi, D B ChriseyAbstract:High-quality indium–tin–oxide (ITO) thin films (200–850 nm) have been grown by pulsed laser deposition (PLD) on glass substrates without a postdeposition annealing treatment. The structural, electrical, and optical properties of these films have been investigated as a function of Target Composition, substrate deposition temperature, background gas pressure, and film thickness. Films were deposited from various Target Compositions ranging from 0 to 15 wt % of SnO2 content. The optimum Target Composition for high conductivity was 5 wt % SnO2+95 wt % In2O3. Films were deposited at substrate temperatures ranging from room temperature to 300 °C in O2 partial pressures ranging from 1 to 100 mTorr. Films were deposited using a KrF excimer laser (248 nm, 30 ns full width at half maximum) at a fluence of 2 J/cm2. For a 150-nm-thick ITO film grown at room temperature in an oxygen pressure of 10 mTorr, the resistivity was 4×10−4 Ω cm and the average transmission in the visible range (400–700 nm) was 85%. For a 170-n...
Sören Berg - One of the best experts on this subject based on the ideXlab platform.
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Influence of the Target Composition on reactively sputtered titanium oxide films
Vacuum, 2009Co-Authors: Tomas Kubart, Diederik Depla, Jens Jensen, Tomas Nyberg, Lina Liljeholm, Sören BergAbstract:Abstract Titanium dioxide thin films have many interesting properties and are used in various applications. High refractive index of titania makes it attractive for the glass coating industry, where it is used in low-emissivity and antireflective coatings. Magnetron sputtering is the most common deposition technique for large area coatings and a high deposition rate is therefore of obvious interest. It has been shown previously that high rate can be achieved using substoichiometric Targets. This work deals with reactive magnetron sputtering of titanium oxide films from TiO x Targets with different oxygen contents. The deposition rate and hysteresis behaviour are disclosed. Films were prepared at various oxygen flows and all films were deposited onto glass and silicon substrates with no external heating. The elemental Compositions and structures of deposited films were evaluated by means of X-ray photoelectron spectroscopy, elastic recoil detection analysis and X-ray diffraction. All deposited films were X-ray amorphous. No significant effect of the Target Composition on the optical properties of coatings was observed. However, the residual atmosphere is shown to contribute to the oxidation of growing films.
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high rate reactive magnetron sputter deposition of titanium oxide
Applied Physics Letters, 2008Co-Authors: Tomas Kubart, Diederik Depla, Tomas Nyberg, D S Martin, Sören BergAbstract:A systematic experimental study of reactive sputtering from substoichiometric Targets of TiOx with x ranging from 0 to 1.75 is reported. Experimental results are compared with results from modeling. The developed model describes the observed behavior and explains the origins of the unexpectedly high deposition rate. The behavior is shown to originate from the presence of titanium suboxides at the Target surface caused by preferential sputtering of the oxide. The model can be used for optimization of the Target Composition with respect to the deposition rate and film Composition in a stable hysteresis-free reactive sputtering process.
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Modelling of bias sputter deposition processes
Surface & Coatings Technology, 1994Co-Authors: Sören Berg, Ilia KatardjievAbstract:Abstract The Monte-Carlo-based “high dose” program t-dyn has been used to simulate bias sputter deposition processes. t-dyn follows the collision cascades caused by energetic ions in a solid. The changes in the Target caused by each collision sequence are stored and the Target Composition modified accordingly for the next incoming ion. The program also allows the addition of five different non-energetic atomic fluxes to the surface. Calculations of the continuous deposition and resputtering make it possible to simulate the substrate-film interface formation as well as the build-up of a coating on the substrate surface. In this presentation we focus on some phenomena which occur during bias sputter deposition in the limit where the resputtering rate is close to the arrival rate of the deposition species. We shall present simulation studies that illustrate that substrate-dependent preferential sputtering effects frequently appear during film-substrate interface formation. The resputtering yield of the deposition species from the interface may differ by an order of magnitude for different substrates. This effect is so pronounced that for identical processing conditions it is possible to obtain zero net film growth at certain substrates but substantial net film growth at other substrate materials. It is well known that because of preferential resputtering the film Composition obtained during bias sputter deposition from an binary alloy Target may differ significantly from the Target Composition. What is less known, however, is that for very thin coatings the resulting film Composition may also depend on the underlying substrate. We shall describe how the substrate-dependent resputtering rate effect also may explain this substrate “memory” effect in film Composition during bias sputter deposition of binary alloys.
