The Experts below are selected from a list of 7938 Experts worldwide ranked by ideXlab platform
Christian Mitterer - One of the best experts on this subject based on the ideXlab platform.
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the sputter performance of an industrial scale planar mo Target over its lifetime Target Erosion and film properties
Surface & Coatings Technology, 2020Co-Authors: Martin Rausch, Asaf Sabag, Karlheinz Pichler, Georg C Gruber, Judith Kostenbauer, Harald Kostenbauer, Patrice Kreiml, Megan J Cordill, Jorg Winkler, Christian MittererAbstract:Abstract Magnetron sputter deposited Mo-based thin films are widely used as diffusion barriers and metallization layers for signal and data bus lines of flat panel displays or back electrodes of thin film solar cells. These films are deposited at large-scale from rectangular planar sputter Targets, with the necessity of constant film thickness and properties over Target usage. Within this work, a new 600 × 125 mm2 planar Mo-Target was sputtered at a constant power of 3.5 kW until the Erosion track reached 80% of the maximum useable Target thickness. Every other 50 kWh, films were deposited onto a 9 × 5 matrix of (100) Si in different deposition modes (i.e. static and oscillation of the substrate carrier). By investigating the individual sample sets, the sputter behavior at different stages of Target usage could be assessed. The sputter behavior changes with the progressing evolution of an Erosion groove and affects thickness, stress and electrical resistivity of the films. In the beginning and end of Target usage, films with low electrical resistivity and high tensile stresses are grown, whereas a medium Target Erosion leads to films with increased resistivity and lower tensile stresses. This time variance is attributed to two competing effects changing with proceeding Target Erosion, which affect the growth conditions of the films: (i) the increase of the reflection angle of Ar neutrals due to the evolution of an Erosion groove, lowering the energy input into the growing film, and (ii) a rising number of Ar+ ions due to an increase of Target current, directly affecting the overall number of reflected Ar neutrals, increasing the energy input into the growing film.
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Linking Erosion and sputter performance of a rotatable Mo Target to microstructure and properties of the deposited thin films
Surface & Coatings Technology, 2018Co-Authors: Anna Maria Hofer-roblyek, Karlheinz Pichler, Jorg Winkler, Christian Linke, Robert Franz, Christian MittererAbstract:Abstract The use of Mo in large area thin film deposition includes back contact layers for thin film solar cells as well as diffusion barriers and source/drain electrodes in microelectronics and relies on its excellent thermal stability and chemical inertness as well as low electrical resistivity. A constant high quality of sputter deposited thin films during the entire Target lifetime is of vital importance for these applications. Thus, this study addresses the sputter performance, i.e. changes of current, voltage and arc rate, recorded during Erosion of a rotatable Mo Target as well as the quality of thin films deposited at different Erosion stages. The enhanced Target Erosion and the thus reduced Target wall thickness cause an increase of the magnetic field strength in front of the Target and yield a slightly reduced voltage and increased current. Increased arc rates could be related to venting the vacuum chamber during interruptions in Target Erosion which were needed for thin film depositions. Both, microstructure and electrical resistivity of the films deposited are widely unaffected by the progressing Target Erosion. In contrast, different substrate carrier oscillation modes determine film topography, stress and electrical resistivity. The end of Target life is determined by the pronounced sputter grooves formed at both ends of the rotatable Target due to the shape of the permanent magnetic field at the turnarounds rather than changes in the quality of the films deposited.
Kenichi Nanbu - One of the best experts on this subject based on the ideXlab platform.
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Synthetic simulation of plasma formation, Target Erosion, and film deposition in a large magnetron sputtering apparatus
Vacuum, 2012Co-Authors: Kenichi Nanbu, Tatsuro OhshitaAbstract:Abstract Examples of simulations of all relevant sputtering processes are described in this paper. Processes include plasma formation, Target Erosion, emission of sputtered atoms, and deposition of sputtered atoms for two types of magnetron sputtering apparatuses. One is axisymmetric and the other is three-dimensional.
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Monte Carlo numerical analysis of Target Erosion and film growth in a three‐dimensional sputtering chamber
Journal of Vacuum Science and Technology, 1996Co-Authors: Vladimir V. Serikov, Kenichi NanbuAbstract:A combination of two mathematical models for three‐dimensional Monte Carlo particle simulation of a low pressure sputtering environment is proposed. One is intended for the simulation of a discharge gas flow, and the other for the sputtered atom transport. The combination is used to characterize Target Erosion and film growth. The models are refined with recourse to experimental measurements made in a practical sputtering apparatus (SPF‐210 AS, ANELVA Ltd.) over the range of operating pressures and flow rates of 0.3–10 Pa and 0.5–5 sccm, respectively. A considerable number of numerical analyses are done to find possible reasons for the measured nonuniformity of Target Erosion and film growth rate distributions. Simulation results show that under the operating and design conditions treated here the nonuniformity of gas flow field appears to be too weak to explain the experimental data. Film growth rates simulated for measured Erosion rates show a good agreement with the experimental data for the various op...
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monte carlo numerical analysis of Target Erosion and film growth in a three dimensional sputtering chamber
Journal of Vacuum Science and Technology, 1996Co-Authors: Vladimir V. Serikov, Kenichi NanbuAbstract:A combination of two mathematical models for three‐dimensional Monte Carlo particle simulation of a low pressure sputtering environment is proposed. One is intended for the simulation of a discharge gas flow, and the other for the sputtered atom transport. The combination is used to characterize Target Erosion and film growth. The models are refined with recourse to experimental measurements made in a practical sputtering apparatus (SPF‐210 AS, ANELVA Ltd.) over the range of operating pressures and flow rates of 0.3–10 Pa and 0.5–5 sccm, respectively. A considerable number of numerical analyses are done to find possible reasons for the measured nonuniformity of Target Erosion and film growth rate distributions. Simulation results show that under the operating and design conditions treated here the nonuniformity of gas flow field appears to be too weak to explain the experimental data. Film growth rates simulated for measured Erosion rates show a good agreement with the experimental data for the various op...
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Computer simulation of growth of thin films fabricated by the sputtering method: comparison with experiment
Thin Solid Films, 1993Co-Authors: Kenichi Nanbu, S. Uchida, H. YoshidaAbstract:Abstract The thickness distribution of films deposited on the 6 in wafer is calculated for an industrial magnetron sputtering apparatus by taking into consideration the measured profile of inhomogeneous Target Erosion and the collision of sputtered atoms. The results obtained show good agreement with the experimental data.
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effects of Target Erosion on the growth rate of films fabricated by the sputtering method
Transactions of the Japan Society of Mechanical Engineers. B, 1991Co-Authors: Kenichi Nanbu, Tamotsu Morimoto, Yuichi GotoAbstract:The Target of a sputtering apparatus usually suffers from nonuniform Erosion due to incident ions. The growth rate of deposited films then depends on the distribution of the Erosion rate on the Target. The test multiparticle method, which is a combination of the Monte Carlo direct simulation method and the test-particle method, is used to calculate atomic motions and depositions in an axisymmetrical sputtering chamber. The effect of the Erosion rate on the thickness distribution of the films is clarified in the pressure range of 0.1-1 Pa by having recourse to the obtained density and flow fields of the sputtered atoms.
Ying Zhang - One of the best experts on this subject based on the ideXlab platform.
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Computer simulation of film thickness distribution in symmetrical magnet magnetron sputtering
Vacuum, 1995Co-Authors: Qi Hua Fan, Xiao-hong Chen, Ying ZhangAbstract:Film thickness distribution in a so called symmetrical magnet magnetron sputtering system was simulated according to the model T = ∝02π ∝0R E(r) cosn (θ) r/c2 dr dφ. The Target Erosion rate E(r) was deduced from the Target Erosion pattern. A computer program has been written according to the model to calculate film thickness. Under specified sputtering conditions, we could determine the spatial distribution characteristic of sputtered atoms as cos14 (θ). With this model we also calculated the film thickness distribution at different Target-to-substrate distances and the results showed good agreement with experimental ones. This simulation method also may be applied to other magnetron sputtering systems.
Qi Hua Fan - One of the best experts on this subject based on the ideXlab platform.
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Computer-aided simulation of a rotary sputtering magnetron
Journal of Applied Physics, 2004Co-Authors: Qi Hua Fan, J.j. Gracio, Li Qin ZhouAbstract:In the past, computer-aided simulation of sputtering magnetron has been applied mainly to planar cathodes with flat Target surfaces. In this work, we have simulated the Target Erosion profile of a cylindrical rotary magnetron by tracing electron trajectories and predicting ionization distribution. The electric potential is prescribed as a radial function. A fourth-order Runge–Kutta method is used to solve the electron movement equations, and a Monte Carlo method is employed to predict electron/Ar collision. It is shown that the simulation can predict the Target Erosion with reasonable accuracy.
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Computer simulation of film thickness distribution in symmetrical magnet magnetron sputtering
Vacuum, 1995Co-Authors: Qi Hua Fan, Xiao-hong Chen, Ying ZhangAbstract:Film thickness distribution in a so called symmetrical magnet magnetron sputtering system was simulated according to the model T = ∝02π ∝0R E(r) cosn (θ) r/c2 dr dφ. The Target Erosion rate E(r) was deduced from the Target Erosion pattern. A computer program has been written according to the model to calculate film thickness. Under specified sputtering conditions, we could determine the spatial distribution characteristic of sputtered atoms as cos14 (θ). With this model we also calculated the film thickness distribution at different Target-to-substrate distances and the results showed good agreement with experimental ones. This simulation method also may be applied to other magnetron sputtering systems.
Hongyou Chen - One of the best experts on this subject based on the ideXlab platform.
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Effects of magnetic field on the Target Erosion in the symmetrical magnets magnetron sputtering method
Thin Solid Films, 1993Co-Authors: Hongyou ChenAbstract:Abstract The Target Erosion pattern was studied by the symmetrical magnet magnetron sputtering method. Three cathodes with different inner magnets were used respectively. The results showed that the Target Erosion pattern had a close relationship with the magnetic field distribution. The Target utilization rate was about 38%, 64%, and 57% for inner magnets of 30 mm, 40 mm, and 50 mm diameter respectively.
