The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Fontserè Recuenco Abel - One of the best experts on this subject based on the ideXlab platform.
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Advanced AlGaN/GaN HEMT Technology, Design, fabrication and characterization
Universitat Politècnica de Catalunya, 2013Co-Authors: Fontserè Recuenco AbelAbstract:Premi extraordinari doctorat curs 2012-2013, àmbit Enginyeria de les TICNowadays, the microelectronics Technology is based on the mature and very well established silicon (Si) Technology. However, Si exhibits some important limitations regarding its voltage blocking capability, operation temperature and switching frequency. In this sense, Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) devices have the potential to make this change possible. The unique combination of the high-breakdown field, the high-channel electron mobility of the two dimensional electron gas (2DEG), and high-temperature of operation has attracted enormous interest from social, academia and industry and in this context this PhD dissertation has been made. This thesis has focused on improving the device performance through the advanced Design, fabrication and characterization of AlGaN/GaN HEMTs, primarily grown on Si templates. The first milestone of this PhD dissertation has been the establishment of a know-how on GaN HEMT Technology from several points of view: the device Design, the device modeling, the process fabrication and the advanced characterization primarily using devices fabricated at Centre de Recherche sur l'Hétéro-Epitaxie (CRHEA-CNRS) (France) in the framework of a collaborative project. In this project, the main workhorse of this dissertation was the explorative analysis performed on the AlGaN/GaN HEMTs by innovative electrical and physical characterization methods. A relevant objective of this thesis was also to merge the nanoTechnology approach with the conventional characterization techniques at the device scale to understand the device performance. A number of physical characterization techniques have been imaginatively used during this PhD determine the main physical parameters of our devices such as the morphology, the composition, the threading dislocations density, the nanoscale conductive pattern and others. The conductive atomic force microscopy (CAFM) tool have been widely described and used to understand the conduction mechanisms through the AlGaN/GaN Ohmic contact by performing simultaneously topography and electrical conductivity measurements. As it occurs with the most of the electronic switches, the gate stack is maybe the critical part of the device in terms of performance and longtime reliability. For this reason, how the AlGaN/GaN HEMT gate contact affects the overall HEMT behaviour by means of advanced characterization and modeling has been intensively investigated. It is worth mentioning that the high-temperature characterization is also a cornerstone of this PhD. It has been reported the elevated temperature impact on the forward and the reverse leakage currents for analogous Schottky gate HEMTs grown on different substrates: Si, sapphire and free-standing GaN (FS-GaN). The HEMT' forward-current temperature coefficients (T^a) as well as the thermal activation energies have been determined in the range of 25-300 ºC. Besides, the impact of the elevated temperature on the Ohmic and gate contacts has also been investigated. The main results of the gold-free AlGaN/GaN HEMTs high-voltage devices fabricated with a 4 inch Si CMOS compatible Technology at the clean room of the CNM in the framework of the industrial contract with ON semiconductor were presented. We have shown that the fabricated devices are in the state-of-the-art (gold-free Ohmic and Schottky contacts) taking into account their power device figure-of-merit ((VB^2)/Ron) of 4.05×10^8 W/cm^2. Basically, two different families of AlGaN/GaN-on-Si MIS-HEMTs devices were fabricated on commercial 4 inch wafers: (i) using a thin ALD HfO2 (deposited on the CNM clean room) and (ii) thin in-situ grown Si3N4, as a gate insulator (grown by the vendor). The scientific impact of this PhD in terms of science indicators is of 17 journal papers (8 as first author) and 10 contributions at international conferences.Award-winnin
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Advanced AlGaN/GaN HEMT Technology, Design, fabrication and characterization
Universitat Politècnica de Catalunya, 2013Co-Authors: Fontserè Recuenco AbelAbstract:Premi extraordinari doctorat curs 2012-2013, àmbit Enginyeria de les TICNowadays, the microelectronics Technology is based on the mature and very well established silicon (Si) Technology. However, Si exhibits some important limitations regarding its voltage blocking capability, operation temperature and switching frequency. In this sense, Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) devices have the potential to make this change possible. The unique combination of the high-breakdown field, the high-channel electron mobility of the two dimensional electron gas (2DEG), and high-temperature of operation has attracted enormous interest from social, academia and industry and in this context this PhD dissertation has been made. This thesis has focused on improving the device performance through the advanced Design, fabrication and characterization of AlGaN/GaN HEMTs, primarily grown on Si templates. The first milestone of this PhD dissertation has been the establishment of a know-how on GaN HEMT Technology from several points of view: the device Design, the device modeling, the process fabrication and the advanced characterization primarily using devices fabricated at Centre de Recherche sur l'Hétéro-Epitaxie (CRHEA-CNRS) (France) in the framework of a collaborative project. In this project, the main workhorse of this dissertation was the explorative analysis performed on the AlGaN/GaN HEMTs by innovative electrical and physical characterization methods. A relevant objective of this thesis was also to merge the nanoTechnology approach with the conventional characterization techniques at the device scale to understand the device performance. A number of physical characterization techniques have been imaginatively used during this PhD determine the main physical parameters of our devices such as the morphology, the composition, the threading dislocations density, the nanoscale conductive pattern and others. The conductive atomic force microscopy (CAFM) tool have been widely described and used to understand the conduction mechanisms through the AlGaN/GaN Ohmic contact by performing simultaneously topography and electrical conductivity measurements. As it occurs with the most of the electronic switches, the gate stack is maybe the critical part of the device in terms of performance and longtime reliability. For this reason, how the AlGaN/GaN HEMT gate contact affects the overall HEMT behaviour by means of advanced characterization and modeling has been intensively investigated. It is worth mentioning that the high-temperature characterization is also a cornerstone of this PhD. It has been reported the elevated temperature impact on the forward and the reverse leakage currents for analogous Schottky gate HEMTs grown on different substrates: Si, sapphire and free-standing GaN (FS-GaN). The HEMT' forward-current temperature coefficients (T^a) as well as the thermal activation energies have been determined in the range of 25-300 ºC. Besides, the impact of the elevated temperature on the Ohmic and gate contacts has also been investigated. The main results of the gold-free AlGaN/GaN HEMTs high-voltage devices fabricated with a 4 inch Si CMOS compatible Technology at the clean room of the CNM in the framework of the industrial contract with ON semiconductor were presented. We have shown that the fabricated devices are in the state-of-the-art (gold-free Ohmic and Schottky contacts) taking into account their power device figure-of-merit ((VB^2)/Ron) of 4.05×10^8 W/cm^2. Basically, two different families of AlGaN/GaN-on-Si MIS-HEMTs devices were fabricated on commercial 4 inch wafers: (i) using a thin ALD HfO2 (deposited on the CNM clean room) and (ii) thin in-situ grown Si3N4, as a gate insulator (grown by the vendor). The scientific impact of this PhD in terms of science indicators is of 17 journal papers (8 as first author) and 10 contributions at international conferences.Award-winningPostprint (published version
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Advanced AlGaN/GaN HEMT Technology, Design, fabrication and characterization
Universitat Politècnica de Catalunya, 2013Co-Authors: Fontserè Recuenco AbelAbstract:Nowadays, the microelectronics Technology is based on the mature and very well established silicon (Si) Technology. However, Si exhibits some important limitations regarding its voltage blocking capability, operation temperature and switching frequency. In this sense, Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) devices have the potential to make this change possible. The unique combination of the high-breakdown field, the high-channel electron mobility of the two dimensional electron gas (2DEG), and high-temperature of operation has attracted enormous interest from social, academia and industry and in this context this PhD dissertation has been made. This thesis has focused on improving the device performance through the advanced Design, fabrication and characterization of AlGaN/GaN HEMTs, primarily grown on Si templates. The first milestone of this PhD dissertation has been the establishment of a know-how on GaN HEMT Technology from several points of view: the device Design, the device modeling, the process fabrication and the advanced characterization primarily using devices fabricated at Centre de Recherche sur l'Hétéro-Epitaxie (CRHEA-CNRS) (France) in the framework of a collaborative project. In this project, the main workhorse of this dissertation was the explorative analysis performed on the AlGaN/GaN HEMTs by innovative electrical and physical characterization methods. A relevant objective of this thesis was also to merge the nanoTechnology approach with the conventional characterization techniques at the device scale to understand the device performance. A number of physical characterization techniques have been imaginatively used during this PhD determine the main physical parameters of our devices such as the morphology, the composition, the threading dislocations density, the nanoscale conductive pattern and others. The conductive atomic force microscopy (CAFM) tool have been widely described and used to understand the conduction mechanisms through the AlGaN/GaN Ohmic contact by performing simultaneously topography and electrical conductivity measurements. As it occurs with the most of the electronic switches, the gate stack is maybe the critical part of the device in terms of performance and longtime reliability. For this reason, how the AlGaN/GaN HEMT gate contact affects the overall HEMT behaviour by means of advanced characterization and modeling has been intensively investigated. It is worth mentioning that the high-temperature characterization is also a cornerstone of this PhD. It has been reported the elevated temperature impact on the forward and the reverse leakage currents for analogous Schottky gate HEMTs grown on different substrates: Si, sapphire and free-standing GaN (FS-GaN). The HEMT' forward-current temperature coefficients (T^a) as well as the thermal activation energies have been determined in the range of 25-300 ºC. Besides, the impact of the elevated temperature on the Ohmic and gate contacts has also been investigated. The main results of the gold-free AlGaN/GaN HEMTs high-voltage devices fabricated with a 4 inch Si CMOS compatible Technology at the clean room of the CNM in the framework of the industrial contract with ON semiconductor were presented. We have shown that the fabricated devices are in the state-of-the-art (gold-free Ohmic and Schottky contacts) taking into account their power device figure-of-merit ((VB^2)/Ron) of 4.05×10^8 W/cm^2. Basically, two different families of AlGaN/GaN-on-Si MIS-HEMTs devices were fabricated on commercial 4 inch wafers: (i) using a thin ALD HfO2 (deposited on the CNM clean room) and (ii) thin in-situ grown Si3N4, as a gate insulator (grown by the vendor). The scientific impact of this PhD in terms of science indicators is of 17 journal papers (8 as first author) and 10 contributions at international conferences
Barry R Masters - One of the best experts on this subject based on the ideXlab platform.
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optical devices in ophthalmology and optometry Technology Design principles and clinical applications
Journal of Biomedical Optics, 2014Co-Authors: Barry R MastersAbstract:Optical Devices in Ophthalmology and Optometry is a highly recommended textbook that explains the physical principles of optics, photonics, metrology, and lasers, and proceeds with the Design principles and instrument construction of medical devices that are most often used in diagnosis and treatment. The textbook is based on the lectures that two of the authors taught to graduate students with backgrounds in physics, electrical, and mechanical engineering. The author’s aim in their courses is to bridge the physics and engineering with the development of medical devices for ophthalmology and optometry. But this textbook’s intended audience consists of engineers and physicists who work in academic or industrial research. Together the authors built upon their expertise in optics, medical Technology, laser development and laser applications in medicine, and medical devices to produce a comprehensive textbook that is physically rigorous, clearly written, well illustrated with clear, colored figures, and enhanced by extensive footnotes, problem sets, critical references, a summary of all the used mathematical variables and abbreviations, and an index.
Suzanne Martin - One of the best experts on this subject based on the ideXlab platform.
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principles for fostering the transdisciplinary development of assistive technologies
Disability and Rehabilitation: Assistive Technology, 2017Co-Authors: Jennifer Boger, Jan Miller Polgar, Piper Jackson, Judith Sixsmith, Andrew Sixsmith, Pia Kontos, Alisa Grigorovich, Maurice Mulvenna, Alex Mihailidis, Suzanne MartinAbstract:AbstractDeveloping useful and usable assistive technologies often presents complex (or “wicked”) challenges that require input from multiple disciplines and sectors. Transdisciplinary collaboration can enable holistic understanding of challenges that may lead to innovative, impactful and transformative solutions. This paper presents generalised principles that are intended to foster transdisciplinary assistive Technology development. The paper introduces the area of assistive Technology Design before discussing general aspects of transdisciplinary collaboration followed by an overview of relevant concepts, including approaches, methodologies and frameworks for conducting and evaluating transdisciplinary working and assistive Technology Design. The principles for transdisciplinary development of assistive technologies are presented and applied post hoc to the COACH project, an ambient-assisted living Technology for guiding completion of activities of daily living by older adults with dementia as an illustr...
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principles for fostering the transdisciplinary development of assistive technologies
Disability and Rehabilitation: Assistive Technology, 2017Co-Authors: Jennifer Boger, Jan Miller Polgar, Piper Jackson, Judith Sixsmith, Andrew Sixsmith, Pia Kontos, Alisa Grigorovich, Maurice Mulvenna, Alex Mihailidis, Suzanne MartinAbstract:Developing useful and usable assistive technologies often presents complex (or "wicked") challenges that require input from multiple disciplines and sectors. Transdisciplinary collaboration can enable holistic understanding of challenges that may lead to innovative, impactful and transformative solutions. This paper presents generalised principles that are intended to foster transdisciplinary assistive Technology development. The paper introduces the area of assistive Technology Design before discussing general aspects of transdisciplinary collaboration followed by an overview of relevant concepts, including approaches, methodologies and frameworks for conducting and evaluating transdisciplinary working and assistive Technology Design. The principles for transdisciplinary development of assistive technologies are presented and applied post hoc to the COACH project, an ambient-assisted living Technology for guiding completion of activities of daily living by older adults with dementia as an illustrative example. Future work includes the refinement and validation of these principles through their application to real-world transdisciplinary assistive Technology projects. Implications for rehabilitation Transdisciplinarity encourages a focus on real world 'wicked' problems. A transdisciplinary approach involves transcending disciplinary boundaries and collaborating with interprofessional and community partners (including the Technology's intended users) on a shared problem. Transdisciplinarity fosters new ways of thinking about and doing research, development, and implementation, expanding the scope, applicability, and commercial viability of assistive technologies.
Katie A Siek - One of the best experts on this subject based on the ideXlab platform.
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persuasive wearable Technology Design for health and wellness
International Conference on Pervasive Computing, 2012Co-Authors: Swamy Ananthanarayan, Katie A SiekAbstract:Given the world's obesity epidemic and battle with chronic illness, there is a growing body of research that suggests that a moderate physical lifestyle has significant impact on psychological and physical health. Wearable computing has the potential to encourage physical activity by increasing health awareness and persuading change through just-in-time feedback. This form of Technology could help individuals manage lifestyle related factors and implement healthy routines. In this paper, we explore the benefits and tradeoffs of current wearable health technologies along with the persuasion methods employed by their Designers to motivate healthy behavior change. We also discuss the challenges and limitations of implementing wearable technologies and suggest possible improvements.
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bridging the information gap collaborative Technology Design with low income at risk families to engender healthy behaviors
Australasian Computer-Human Interaction Conference, 2009Co-Authors: Katie A Siek, Jeffrey S Lamarche, Julie MaitlandAbstract:The leading cause of death in the United States is cardiovascular disease. Formative studies have shown that technological interventions may help effect lifestyle changes, however there has been minimal research to ascertain appropriate interventions for at risk, low-income populations. We conducted two participatory-based Design workshops with nine caregivers and thirteen children to help determine suitable interventions for an at-risk low socioeconomic population. The major themes that emerged from the workshop for caregivers were their need for assistive systems that would help with everything from parenting to budgeting time and resources. Researchers in human computer interaction would benefit from our findings by developing a holistic sense of barriers encountered by low-income families to improve their health. We conclude the paper with a discussion of Design implications.
Jennifer Boger - One of the best experts on this subject based on the ideXlab platform.
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principles for fostering the transdisciplinary development of assistive technologies
Disability and Rehabilitation: Assistive Technology, 2017Co-Authors: Jennifer Boger, Jan Miller Polgar, Piper Jackson, Judith Sixsmith, Andrew Sixsmith, Pia Kontos, Alisa Grigorovich, Maurice Mulvenna, Alex Mihailidis, Suzanne MartinAbstract:AbstractDeveloping useful and usable assistive technologies often presents complex (or “wicked”) challenges that require input from multiple disciplines and sectors. Transdisciplinary collaboration can enable holistic understanding of challenges that may lead to innovative, impactful and transformative solutions. This paper presents generalised principles that are intended to foster transdisciplinary assistive Technology development. The paper introduces the area of assistive Technology Design before discussing general aspects of transdisciplinary collaboration followed by an overview of relevant concepts, including approaches, methodologies and frameworks for conducting and evaluating transdisciplinary working and assistive Technology Design. The principles for transdisciplinary development of assistive technologies are presented and applied post hoc to the COACH project, an ambient-assisted living Technology for guiding completion of activities of daily living by older adults with dementia as an illustr...
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principles for fostering the transdisciplinary development of assistive technologies
Disability and Rehabilitation: Assistive Technology, 2017Co-Authors: Jennifer Boger, Jan Miller Polgar, Piper Jackson, Judith Sixsmith, Andrew Sixsmith, Pia Kontos, Alisa Grigorovich, Maurice Mulvenna, Alex Mihailidis, Suzanne MartinAbstract:Developing useful and usable assistive technologies often presents complex (or "wicked") challenges that require input from multiple disciplines and sectors. Transdisciplinary collaboration can enable holistic understanding of challenges that may lead to innovative, impactful and transformative solutions. This paper presents generalised principles that are intended to foster transdisciplinary assistive Technology development. The paper introduces the area of assistive Technology Design before discussing general aspects of transdisciplinary collaboration followed by an overview of relevant concepts, including approaches, methodologies and frameworks for conducting and evaluating transdisciplinary working and assistive Technology Design. The principles for transdisciplinary development of assistive technologies are presented and applied post hoc to the COACH project, an ambient-assisted living Technology for guiding completion of activities of daily living by older adults with dementia as an illustrative example. Future work includes the refinement and validation of these principles through their application to real-world transdisciplinary assistive Technology projects. Implications for rehabilitation Transdisciplinarity encourages a focus on real world 'wicked' problems. A transdisciplinary approach involves transcending disciplinary boundaries and collaborating with interprofessional and community partners (including the Technology's intended users) on a shared problem. Transdisciplinarity fosters new ways of thinking about and doing research, development, and implementation, expanding the scope, applicability, and commercial viability of assistive technologies.
