The Experts below are selected from a list of 29475 Experts worldwide ranked by ideXlab platform
Juha Tanskanen - One of the best experts on this subject based on the ideXlab platform.
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Mixture adsorption on zeolites applying the Pisat Temperature-Dependency approach
Chemical Engineering Science, 2013Co-Authors: Tiina Leppäjärvi, Jani Kangas, Ilkka Malinen, Juha TanskanenAbstract:Abstract In this study, the feasibility of the P i sat Temperature-Dependency approach in predicting mixture adsorption loadings on zeolites is examined. The presented case examples show that IAST, RAST or extended Langmuir together with the pure component saturated vapour pressure P i sat to describe the Temperature Dependency of adsorption, can be used to predict mixture adsorption. The approach makes it possible to predict mixture adsorption in various Temperature, pressure and composition conditions by utilizing pure component adsorption data at only one Temperature. In addition to vapour phase adsorption, the P i sat Temperature-Dependency approach is also found to be applicable in modelling liquid mixture adsorption. The approach is a valuable engineering tool especially in cases where there is a lack of adsorption data. The approach can be used e.g., in zeolite membrane permeation modelling, where the adsorption phenomenon has a considerable significance.
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Utilization of Pisat Temperature-Dependency in modelling adsorption on zeolites
Chemical Engineering Science, 2012Co-Authors: Tiina Leppäjärvi, Jani Kangas, Ilkka Malinen, Juha TanskanenAbstract:Abstract In this study, the feasibility of utilizing pure component saturated vapour pressure P i sat in representing the Temperature-Dependency of physisorption of vapours on zeolites is examined. Adsorption data of water, alcohols and aromatic compounds both on hydrophilic on and hydrophobic zeolites has been collected from the literature and represented as a function of P / P i sat . It is found that the Temperature-Dependency of adsorption of a component can be described by the saturated vapour pressure, especially for water adsorption on zeolites. For systems where chemisorption also plays an important role, such as aromatics adsorption on zeolites, P i sat alone is not capable of predicting the Temperature-Dependency accurately enough. It is also observed that contrary to common practice, the maximum adsorption loading q i sat on zeolite should be considered independent of Temperature. The proposed approach can be used in the modelling and design of industrial processes exploiting adsorption, such as in zeolite membrane systems, where separation is based on both adsorption and diffusion phenomena.
Tiina Leppäjärvi - One of the best experts on this subject based on the ideXlab platform.
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Mixture adsorption on zeolites applying the Pisat Temperature-Dependency approach
Chemical Engineering Science, 2013Co-Authors: Tiina Leppäjärvi, Jani Kangas, Ilkka Malinen, Juha TanskanenAbstract:Abstract In this study, the feasibility of the P i sat Temperature-Dependency approach in predicting mixture adsorption loadings on zeolites is examined. The presented case examples show that IAST, RAST or extended Langmuir together with the pure component saturated vapour pressure P i sat to describe the Temperature Dependency of adsorption, can be used to predict mixture adsorption. The approach makes it possible to predict mixture adsorption in various Temperature, pressure and composition conditions by utilizing pure component adsorption data at only one Temperature. In addition to vapour phase adsorption, the P i sat Temperature-Dependency approach is also found to be applicable in modelling liquid mixture adsorption. The approach is a valuable engineering tool especially in cases where there is a lack of adsorption data. The approach can be used e.g., in zeolite membrane permeation modelling, where the adsorption phenomenon has a considerable significance.
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Utilization of Pisat Temperature-Dependency in modelling adsorption on zeolites
Chemical Engineering Science, 2012Co-Authors: Tiina Leppäjärvi, Jani Kangas, Ilkka Malinen, Juha TanskanenAbstract:Abstract In this study, the feasibility of utilizing pure component saturated vapour pressure P i sat in representing the Temperature-Dependency of physisorption of vapours on zeolites is examined. Adsorption data of water, alcohols and aromatic compounds both on hydrophilic on and hydrophobic zeolites has been collected from the literature and represented as a function of P / P i sat . It is found that the Temperature-Dependency of adsorption of a component can be described by the saturated vapour pressure, especially for water adsorption on zeolites. For systems where chemisorption also plays an important role, such as aromatics adsorption on zeolites, P i sat alone is not capable of predicting the Temperature-Dependency accurately enough. It is also observed that contrary to common practice, the maximum adsorption loading q i sat on zeolite should be considered independent of Temperature. The proposed approach can be used in the modelling and design of industrial processes exploiting adsorption, such as in zeolite membrane systems, where separation is based on both adsorption and diffusion phenomena.
Gennadi Bersuker - One of the best experts on this subject based on the ideXlab platform.
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modeling Temperature Dependency 6 400k of the leakage current through the sio 2 high k stacks
European Solid-State Device Research Conference, 2010Co-Authors: Luca Vandelli, A. Padovani, Luca Larcher, Richard G. Southwick, William B. Knowlton, Gennadi BersukerAbstract:We investigate the mechanism of the gate leakage current in the Si/SiO 2 /HfO 2 /TiN stacks in a wide Temperature range (6 – 400 K) by simulating the electron transport using a multi-phonon trap assisted tunneling model. Good agreement between simulations and measurements allows indentifying the dominant physical processes controlling the Temperature Dependency of the gate current. In depletion/weak inversion, the current is limited by the supply of carrier. In strong inversion, the electron-phonon interaction is found to be the dominant factor determining the current voltage and Temperature dependencies. These simulations allowed to extract important defect parameters, e.g. the trap relaxation energy and phonon effective energy, which defines the defect atomic structure.
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Modeling Temperature Dependency (6 – 400K) of the leakage current through the SiO 2 /high-K stacks
2010 Proceedings of the European Solid State Device Research Conference, 2010Co-Authors: Luca Vandelli, A. Padovani, Luca Larcher, Richard G. Southwick, William B. Knowlton, Gennadi BersukerAbstract:We investigate the mechanism of the gate leakage current in the Si/SiO 2 /HfO 2 /TiN stacks in a wide Temperature range (6 – 400 K) by simulating the electron transport using a multi-phonon trap assisted tunneling model. Good agreement between simulations and measurements allows indentifying the dominant physical processes controlling the Temperature Dependency of the gate current. In depletion/weak inversion, the current is limited by the supply of carrier. In strong inversion, the electron-phonon interaction is found to be the dominant factor determining the current voltage and Temperature dependencies. These simulations allowed to extract important defect parameters, e.g. the trap relaxation energy and phonon effective energy, which defines the defect atomic structure.
M Shariyat - One of the best experts on this subject based on the ideXlab platform.
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dynamic buckling of imperfect laminated plates with piezoelectric sensors and actuators subjected to thermo electro mechanical loadings considering the Temperature Dependency of the material properties
Composite Structures, 2009Co-Authors: M ShariyatAbstract:Dynamic buckling of piezolaminated plates under thermo-electro-mechanical loads has not been investigated so far. In the present paper, effects of the thermo-piezoelasticity on the dynamic buckling under suddenly applied thermal and mechanical loads are investigated for imperfect rectangular composite plates with surface-bonded or embedded piezoelectric sensors and actuators. A finite element formulation based on a higher-order shear deformation theory is developed. Both the initial geometric imperfections of the plate and the Temperature-Dependency of the material properties are taken into account. Complex dynamic loading combinations include in-plane mechanical loads, heating, and electrical actuations are considered. A nine-node second order Lagrangian element, an efficient numerical algorithm for solving the resulted highly nonlinear governing equations, and an instability criterion already proposed by the author are employed. A simple negative proportional feedback control is used to actively control the transient response of the plate. Results show that buckling mitigation due to utilizing integrated piezoelectric sensors and actuators is mainly achieved in extremely high gain values. It is also noticed that in many cases, effects of the control voltage on the results may be ignored compared to the Temperature-Dependency of the material properties and initial geometric imperfections effects.
Dong Zhang - One of the best experts on this subject based on the ideXlab platform.
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Temperature Dependency of the on-state voltage of IGBT and its application in thermal resistance test
2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 2018Co-Authors: Puqi Ning, Xuhui Wen, Dong ZhangAbstract:In this paper, the Temperature Dependency of the on-state voltage of insulated-gate bipolar transistor is analyzed with an emphasis on the influence of collector current. The small-current on-state voltage has a negative Temperature coefficient while the large-current on-state voltage has a positive Temperature coefficient. Based on the analysis, two thermal resistance test systems supplying the small heating current and large heating current respectively were built and compared. To assure the reliability and accuracy, large-current thermal resistance test system is preferred.
