The Experts below are selected from a list of 37215 Experts worldwide ranked by ideXlab platform
F. Cacho - One of the best experts on this subject based on the ideXlab platform.
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HCI Temperature Sense effect from 180nm to 28nm nodes
2021Co-Authors: X. Federspiel, A. Camara, A. Michard, C. Diouf, F. CachoAbstract:A lot of efforts were made to take into account self-heating to improve aging models for hot carrier induced degradation. As a general approach, MOS transistor parameter drift measured at various stress voltages was renormalized to a common junction Temperature using an apparent activation energy. We found that such an approach can induce significant errors since the Temperature Sense effect can represent up to 50% of the apparent measured Ea value. The error was attributed to Temperature Sense effect on measured drift, which was consistent with Vth and mobility models.
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Temperature Sense effect in hci self heating de convolution application to 28nm fdsoi
2016Co-Authors: X. Federspiel, F. Cacho, G Torrente, W Arfaoui, V HuardAbstract:The introduction of new architecture such as finfet and FDSOI triggered many discussion around self-heating in confined MOS transistor devices. Not only self-heating challenges performance itself (reduced mobility) abut also circuit lifetime projection. On one hand occurrence self-heating during circuit operation might accelerate device degradation, on the other hand it also affects accelerated life tests such as HCI. We show in this paper that proposed methods to decorrelate self-heating from HCI stress might be affected by a systematic error due to a misinterpretation of apparent thermal activation energy.
X. Federspiel - One of the best experts on this subject based on the ideXlab platform.
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HCI Temperature Sense effect from 180nm to 28nm nodes
2021Co-Authors: X. Federspiel, A. Camara, A. Michard, C. Diouf, F. CachoAbstract:A lot of efforts were made to take into account self-heating to improve aging models for hot carrier induced degradation. As a general approach, MOS transistor parameter drift measured at various stress voltages was renormalized to a common junction Temperature using an apparent activation energy. We found that such an approach can induce significant errors since the Temperature Sense effect can represent up to 50% of the apparent measured Ea value. The error was attributed to Temperature Sense effect on measured drift, which was consistent with Vth and mobility models.
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Temperature Sense effect in hci self heating de convolution application to 28nm fdsoi
2016Co-Authors: X. Federspiel, F. Cacho, G Torrente, W Arfaoui, V HuardAbstract:The introduction of new architecture such as finfet and FDSOI triggered many discussion around self-heating in confined MOS transistor devices. Not only self-heating challenges performance itself (reduced mobility) abut also circuit lifetime projection. On one hand occurrence self-heating during circuit operation might accelerate device degradation, on the other hand it also affects accelerated life tests such as HCI. We show in this paper that proposed methods to decorrelate self-heating from HCI stress might be affected by a systematic error due to a misinterpretation of apparent thermal activation energy.
C. Diouf - One of the best experts on this subject based on the ideXlab platform.
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HCI Temperature Sense effect from 180nm to 28nm nodes
2021Co-Authors: X. Federspiel, A. Camara, A. Michard, C. Diouf, F. CachoAbstract:A lot of efforts were made to take into account self-heating to improve aging models for hot carrier induced degradation. As a general approach, MOS transistor parameter drift measured at various stress voltages was renormalized to a common junction Temperature using an apparent activation energy. We found that such an approach can induce significant errors since the Temperature Sense effect can represent up to 50% of the apparent measured Ea value. The error was attributed to Temperature Sense effect on measured drift, which was consistent with Vth and mobility models.
A. Michard - One of the best experts on this subject based on the ideXlab platform.
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HCI Temperature Sense effect from 180nm to 28nm nodes
2021Co-Authors: X. Federspiel, A. Camara, A. Michard, C. Diouf, F. CachoAbstract:A lot of efforts were made to take into account self-heating to improve aging models for hot carrier induced degradation. As a general approach, MOS transistor parameter drift measured at various stress voltages was renormalized to a common junction Temperature using an apparent activation energy. We found that such an approach can induce significant errors since the Temperature Sense effect can represent up to 50% of the apparent measured Ea value. The error was attributed to Temperature Sense effect on measured drift, which was consistent with Vth and mobility models.
A. Camara - One of the best experts on this subject based on the ideXlab platform.
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HCI Temperature Sense effect from 180nm to 28nm nodes
2021Co-Authors: X. Federspiel, A. Camara, A. Michard, C. Diouf, F. CachoAbstract:A lot of efforts were made to take into account self-heating to improve aging models for hot carrier induced degradation. As a general approach, MOS transistor parameter drift measured at various stress voltages was renormalized to a common junction Temperature using an apparent activation energy. We found that such an approach can induce significant errors since the Temperature Sense effect can represent up to 50% of the apparent measured Ea value. The error was attributed to Temperature Sense effect on measured drift, which was consistent with Vth and mobility models.
