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George A. Brown - One of the best experts on this subject based on the ideXlab platform.
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Differentiation Between Electric Breakdowns and Dielectric Breakdown in Thin Silicon Oxides
Journal of The Electrochemical Society, 1998Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:In several models of dielectric breakdown, nondestructive electric breakdowns precede destructive thermal dielectric breakdown. Both processes in oxides between 5 nm and 80 nm thick have been studied. The two breakdown phenomena have been differentiated, and the electric breakdowns have been separated from the dielectric breakdown. During constant voltage stressings, prior to dielectric breakdown, transient voltage spikes were measured and spots formed on the surface of the wafers due to electric breakdowns. Similar transient spikes occurred when measuring ramped breakdown voltages. It was found that the time dependent dielectric breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages depended on the resistance and capacitance of the measurement Test Equipment due to the thermal nature of the dielectric breakdown. The TDDB distributions were shifted to shorter times if (i) the impedance of the Test Equipment was lowered and/or (ii) the capacitance of the Test Equipment was raised. The implications of this work are discussed in terms of electric and dielectric breakdown models and practical circuit and device operation.
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nonuniqueness of time dependent dielectric breakdown distributions
Applied Physics Letters, 1997Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:The time-dependent-dielectric-breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages have been shown to depend on the resistance and capacitance of the measurement Test Equipment. The TDDB distributions were shifted to shorter times if the impedance of the Test Equipment was lowered and/or the capacitance of the Test Equipment was raised. The lower resistances and higher capacitances allowed the nonshorting early electric breakdowns to develop into shorting, thermal, dielectric breakdowns.
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Differentiation between electric breakdowns and dielectric breakdown in thin silicon oxides
Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2024Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:It has been known for some time that non-destructive electric breakdowns precede destructive thermal dielectric breakdown. We have been studying both processes in oxides between 5 nm and 80 nm in thickness. We have shown that the electric breakdowns can trigger dielectric breakdown under certain conditions. This triggering of dielectric breakdown causes TDDB distributions to be non-unique. The TDDB distributions could be shifted to shorter times if (a) the impedance of the Test Equipment was lowered and/or (b) the capacitance of the Test Equipment was raised. The implications of this work are discussed in terms of electric/dielectric breakdown models and practical circuit and device operation.
J.c. Jackson - One of the best experts on this subject based on the ideXlab platform.
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Differentiation Between Electric Breakdowns and Dielectric Breakdown in Thin Silicon Oxides
Journal of The Electrochemical Society, 1998Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:In several models of dielectric breakdown, nondestructive electric breakdowns precede destructive thermal dielectric breakdown. Both processes in oxides between 5 nm and 80 nm thick have been studied. The two breakdown phenomena have been differentiated, and the electric breakdowns have been separated from the dielectric breakdown. During constant voltage stressings, prior to dielectric breakdown, transient voltage spikes were measured and spots formed on the surface of the wafers due to electric breakdowns. Similar transient spikes occurred when measuring ramped breakdown voltages. It was found that the time dependent dielectric breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages depended on the resistance and capacitance of the measurement Test Equipment due to the thermal nature of the dielectric breakdown. The TDDB distributions were shifted to shorter times if (i) the impedance of the Test Equipment was lowered and/or (ii) the capacitance of the Test Equipment was raised. The implications of this work are discussed in terms of electric and dielectric breakdown models and practical circuit and device operation.
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nonuniqueness of time dependent dielectric breakdown distributions
Applied Physics Letters, 1997Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:The time-dependent-dielectric-breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages have been shown to depend on the resistance and capacitance of the measurement Test Equipment. The TDDB distributions were shifted to shorter times if the impedance of the Test Equipment was lowered and/or the capacitance of the Test Equipment was raised. The lower resistances and higher capacitances allowed the nonshorting early electric breakdowns to develop into shorting, thermal, dielectric breakdowns.
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Differentiation between electric breakdowns and dielectric breakdown in thin silicon oxides
Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2024Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:It has been known for some time that non-destructive electric breakdowns precede destructive thermal dielectric breakdown. We have been studying both processes in oxides between 5 nm and 80 nm in thickness. We have shown that the electric breakdowns can trigger dielectric breakdown under certain conditions. This triggering of dielectric breakdown causes TDDB distributions to be non-unique. The TDDB distributions could be shifted to shorter times if (a) the impedance of the Test Equipment was lowered and/or (b) the capacitance of the Test Equipment was raised. The implications of this work are discussed in terms of electric/dielectric breakdown models and practical circuit and device operation.
D.j. Dumin - One of the best experts on this subject based on the ideXlab platform.
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Differentiation Between Electric Breakdowns and Dielectric Breakdown in Thin Silicon Oxides
Journal of The Electrochemical Society, 1998Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:In several models of dielectric breakdown, nondestructive electric breakdowns precede destructive thermal dielectric breakdown. Both processes in oxides between 5 nm and 80 nm thick have been studied. The two breakdown phenomena have been differentiated, and the electric breakdowns have been separated from the dielectric breakdown. During constant voltage stressings, prior to dielectric breakdown, transient voltage spikes were measured and spots formed on the surface of the wafers due to electric breakdowns. Similar transient spikes occurred when measuring ramped breakdown voltages. It was found that the time dependent dielectric breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages depended on the resistance and capacitance of the measurement Test Equipment due to the thermal nature of the dielectric breakdown. The TDDB distributions were shifted to shorter times if (i) the impedance of the Test Equipment was lowered and/or (ii) the capacitance of the Test Equipment was raised. The implications of this work are discussed in terms of electric and dielectric breakdown models and practical circuit and device operation.
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nonuniqueness of time dependent dielectric breakdown distributions
Applied Physics Letters, 1997Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:The time-dependent-dielectric-breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages have been shown to depend on the resistance and capacitance of the measurement Test Equipment. The TDDB distributions were shifted to shorter times if the impedance of the Test Equipment was lowered and/or the capacitance of the Test Equipment was raised. The lower resistances and higher capacitances allowed the nonshorting early electric breakdowns to develop into shorting, thermal, dielectric breakdowns.
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Differentiation between electric breakdowns and dielectric breakdown in thin silicon oxides
Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2024Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:It has been known for some time that non-destructive electric breakdowns precede destructive thermal dielectric breakdown. We have been studying both processes in oxides between 5 nm and 80 nm in thickness. We have shown that the electric breakdowns can trigger dielectric breakdown under certain conditions. This triggering of dielectric breakdown causes TDDB distributions to be non-unique. The TDDB distributions could be shifted to shorter times if (a) the impedance of the Test Equipment was lowered and/or (b) the capacitance of the Test Equipment was raised. The implications of this work are discussed in terms of electric/dielectric breakdown models and practical circuit and device operation.
T. Robinson - One of the best experts on this subject based on the ideXlab platform.
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Differentiation Between Electric Breakdowns and Dielectric Breakdown in Thin Silicon Oxides
Journal of The Electrochemical Society, 1998Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:In several models of dielectric breakdown, nondestructive electric breakdowns precede destructive thermal dielectric breakdown. Both processes in oxides between 5 nm and 80 nm thick have been studied. The two breakdown phenomena have been differentiated, and the electric breakdowns have been separated from the dielectric breakdown. During constant voltage stressings, prior to dielectric breakdown, transient voltage spikes were measured and spots formed on the surface of the wafers due to electric breakdowns. Similar transient spikes occurred when measuring ramped breakdown voltages. It was found that the time dependent dielectric breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages depended on the resistance and capacitance of the measurement Test Equipment due to the thermal nature of the dielectric breakdown. The TDDB distributions were shifted to shorter times if (i) the impedance of the Test Equipment was lowered and/or (ii) the capacitance of the Test Equipment was raised. The implications of this work are discussed in terms of electric and dielectric breakdown models and practical circuit and device operation.
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nonuniqueness of time dependent dielectric breakdown distributions
Applied Physics Letters, 1997Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:The time-dependent-dielectric-breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages have been shown to depend on the resistance and capacitance of the measurement Test Equipment. The TDDB distributions were shifted to shorter times if the impedance of the Test Equipment was lowered and/or the capacitance of the Test Equipment was raised. The lower resistances and higher capacitances allowed the nonshorting early electric breakdowns to develop into shorting, thermal, dielectric breakdowns.
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Differentiation between electric breakdowns and dielectric breakdown in thin silicon oxides
Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2024Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:It has been known for some time that non-destructive electric breakdowns precede destructive thermal dielectric breakdown. We have been studying both processes in oxides between 5 nm and 80 nm in thickness. We have shown that the electric breakdowns can trigger dielectric breakdown under certain conditions. This triggering of dielectric breakdown causes TDDB distributions to be non-unique. The TDDB distributions could be shifted to shorter times if (a) the impedance of the Test Equipment was lowered and/or (b) the capacitance of the Test Equipment was raised. The implications of this work are discussed in terms of electric/dielectric breakdown models and practical circuit and device operation.
Omer Oralkan - One of the best experts on this subject based on the ideXlab platform.
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Differentiation Between Electric Breakdowns and Dielectric Breakdown in Thin Silicon Oxides
Journal of The Electrochemical Society, 1998Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:In several models of dielectric breakdown, nondestructive electric breakdowns precede destructive thermal dielectric breakdown. Both processes in oxides between 5 nm and 80 nm thick have been studied. The two breakdown phenomena have been differentiated, and the electric breakdowns have been separated from the dielectric breakdown. During constant voltage stressings, prior to dielectric breakdown, transient voltage spikes were measured and spots formed on the surface of the wafers due to electric breakdowns. Similar transient spikes occurred when measuring ramped breakdown voltages. It was found that the time dependent dielectric breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages depended on the resistance and capacitance of the measurement Test Equipment due to the thermal nature of the dielectric breakdown. The TDDB distributions were shifted to shorter times if (i) the impedance of the Test Equipment was lowered and/or (ii) the capacitance of the Test Equipment was raised. The implications of this work are discussed in terms of electric and dielectric breakdown models and practical circuit and device operation.
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nonuniqueness of time dependent dielectric breakdown distributions
Applied Physics Letters, 1997Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:The time-dependent-dielectric-breakdown (TDDB) distributions measured on a series of identical oxides at the same voltages have been shown to depend on the resistance and capacitance of the measurement Test Equipment. The TDDB distributions were shifted to shorter times if the impedance of the Test Equipment was lowered and/or the capacitance of the Test Equipment was raised. The lower resistances and higher capacitances allowed the nonshorting early electric breakdowns to develop into shorting, thermal, dielectric breakdowns.
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Differentiation between electric breakdowns and dielectric breakdown in thin silicon oxides
Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2024Co-Authors: J.c. Jackson, T. Robinson, Omer Oralkan, D.j. Dumin, George A. BrownAbstract:It has been known for some time that non-destructive electric breakdowns precede destructive thermal dielectric breakdown. We have been studying both processes in oxides between 5 nm and 80 nm in thickness. We have shown that the electric breakdowns can trigger dielectric breakdown under certain conditions. This triggering of dielectric breakdown causes TDDB distributions to be non-unique. The TDDB distributions could be shifted to shorter times if (a) the impedance of the Test Equipment was lowered and/or (b) the capacitance of the Test Equipment was raised. The implications of this work are discussed in terms of electric/dielectric breakdown models and practical circuit and device operation.
