The Experts below are selected from a list of 183 Experts worldwide ranked by ideXlab platform
W Morscheidt - One of the best experts on this subject based on the ideXlab platform.
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probe diagnostics of argon oxygen Tetramethyltin capacitively coupled plasmas for the deposition of tin oxide thin films
Journal of Applied Physics, 2007Co-Authors: Jerome Pulpytel, W Morscheidt, Farzaneh ArefikhonsariAbstract:Langmuir probe measurements in nondepositing and depositing rf capacitively coupled (CCP) plasmas are briefly reviewed and compared to the results obtained in our rf system used for the deposition of tin oxide (SnO2) thin films from argon-oxygen-tetamethyltin [Sn(CH3)4] plasmas. Typically in our experimental conditions for tin oxide deposition, values of kTeff= 1.2−1.5 eV and ne=3−5×109 cm−3 were measured. These values are consistent with those generally reported in other depositing discharges. The shape of the electron energy probability function (EEPF), obtained from the Druyvesteyn procedure, was discussed too. As a consequence of the two electron heating mechanisms in capacitively coupled discharges, that is, ohmic and stochastic heating, the electrons have a bi-Maxwellian EEPF at low pressure (in the range of 10−100 mTorr). Moreover, a deep “hole” appears in the EEPF at the energy which could correspond to the resonant peak of the vibrational excitation cross section of some molecules which can be pr...
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modelling and experimental study of an o2 ar Tetramethyltin discharge used for the deposition of transparent conductive thin tin oxide films
Thin Solid Films, 2003Co-Authors: W Morscheidt, K Hassouni, F Arefikhonsari, J AmourouxAbstract:Non-stoichiometric tin oxide thin films were deposited from an O 2 /Ar/Tetramethyltin (TMT) mixture in a RF glow discharge parallel plate reactor at low pressure (15 Pa) and low temperature (25-80 °C). The aim of this work was to determine the role of the experimental parameters such as the absorbed power, bias voltage and feed gas composition on the electron density and the atomic oxygen mole fraction, two parameters which play an important role on the TMT decomposition and carbon stripping of the deposited films. Since TMT concentration is typically less than 2% a first study was carried out from both experimental and modelling point of view for the O 2 -Ar mixture. Experimental investigations included optical emission spectroscopy, mass spectrometry, and electrical diagnostics. A numerical quasi-homogeneous (0D) model and a self-consistent 1D fluid model were used for comparison. The optimisation of the thin film deposition process was discussed briefly on the basis of the obtained results.
Roy G Gordon - One of the best experts on this subject based on the ideXlab platform.
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properties of fluorine doped tin oxide films produced by atmospheric pressure chemical vapor deposition from Tetramethyltin bromotrifluoromethane and oxygen
Thin Solid Films, 1992Co-Authors: James Proscia, Roy G GordonAbstract:Abstract Fluorine-doped tin oxide films were produced by atmospheric pressure chemical vapor deposition from various mixtures of Tetramethyltin, bromotrifluoromethane, and oxygen. Growth rates of up to 60 nm s −1 were achieved. Optical measurements to assess the visible transparency are presented. Hall effect measurements revealed mobilities of up to 42 cm 2 V −1 s −1 and carrier concentrations typically in the range (1–6) × 10 20 cm −3 . Microprobe analysis revealed the presence of electrically inactive fluorine atoms especially at low deposition temperatures and at high Tetramethyltin (2 mol. %) and bromotrifluoromethane (4 mol. %) compositions. However, at high deposition temperature and low Tetramethyltin (0.5 mol. %) or low bromotrifluoromethane (0.5 mol. %) mixtures, almost all the fluorine dopant atoms are electrically active. Scanning electron microscopy studies revealed an increase in surface texturing when the Tetramethyltin concentration was decreased or the oxygen concentration was increased. X-ray crystallography showed preferential orientation of the crystallites for most reaction conditions.
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kinetic modeling of the chemical vapor deposition of tin oxide from Tetramethyltin and oxygen
The Journal of Physical Chemistry, 1992Co-Authors: Anthony G Zawadzki, Carmen J Giunta, Roy G GordonAbstract:The gas-phase kinetics of the chemical vapor deposition of tin oxide films from Tetramethyltin (TMT) and oxygen was successfully modeled by a detailed gas-phase mechanism involving hydrogen and methane oxidation submechanisms as well as alkyltin reactions. The proposed mechanism is a branched chain process, initiated by pyrolysis of TMT and sustained by a sequence of reactions propagated by both organotin radicals and OH. (CH 3 ) 3 SnOH is posited as a key intermediate, whose decomposition and oxidation leads to film growth, as well as releasing hydrocarbon species which are further oxidized
Farzaneh Arefikhonsari - One of the best experts on this subject based on the ideXlab platform.
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probe diagnostics of argon oxygen Tetramethyltin capacitively coupled plasmas for the deposition of tin oxide thin films
Journal of Applied Physics, 2007Co-Authors: Jerome Pulpytel, W Morscheidt, Farzaneh ArefikhonsariAbstract:Langmuir probe measurements in nondepositing and depositing rf capacitively coupled (CCP) plasmas are briefly reviewed and compared to the results obtained in our rf system used for the deposition of tin oxide (SnO2) thin films from argon-oxygen-tetamethyltin [Sn(CH3)4] plasmas. Typically in our experimental conditions for tin oxide deposition, values of kTeff= 1.2−1.5 eV and ne=3−5×109 cm−3 were measured. These values are consistent with those generally reported in other depositing discharges. The shape of the electron energy probability function (EEPF), obtained from the Druyvesteyn procedure, was discussed too. As a consequence of the two electron heating mechanisms in capacitively coupled discharges, that is, ohmic and stochastic heating, the electrons have a bi-Maxwellian EEPF at low pressure (in the range of 10−100 mTorr). Moreover, a deep “hole” appears in the EEPF at the energy which could correspond to the resonant peak of the vibrational excitation cross section of some molecules which can be pr...
Jerome Pulpytel - One of the best experts on this subject based on the ideXlab platform.
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probe diagnostics of argon oxygen Tetramethyltin capacitively coupled plasmas for the deposition of tin oxide thin films
Journal of Applied Physics, 2007Co-Authors: Jerome Pulpytel, W Morscheidt, Farzaneh ArefikhonsariAbstract:Langmuir probe measurements in nondepositing and depositing rf capacitively coupled (CCP) plasmas are briefly reviewed and compared to the results obtained in our rf system used for the deposition of tin oxide (SnO2) thin films from argon-oxygen-tetamethyltin [Sn(CH3)4] plasmas. Typically in our experimental conditions for tin oxide deposition, values of kTeff= 1.2−1.5 eV and ne=3−5×109 cm−3 were measured. These values are consistent with those generally reported in other depositing discharges. The shape of the electron energy probability function (EEPF), obtained from the Druyvesteyn procedure, was discussed too. As a consequence of the two electron heating mechanisms in capacitively coupled discharges, that is, ohmic and stochastic heating, the electrons have a bi-Maxwellian EEPF at low pressure (in the range of 10−100 mTorr). Moreover, a deep “hole” appears in the EEPF at the energy which could correspond to the resonant peak of the vibrational excitation cross section of some molecules which can be pr...
Anthony G Zawadzki - One of the best experts on this subject based on the ideXlab platform.
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kinetic modeling of the chemical vapor deposition of tin oxide from Tetramethyltin and oxygen
The Journal of Physical Chemistry, 1992Co-Authors: Anthony G Zawadzki, Carmen J Giunta, Roy G GordonAbstract:The gas-phase kinetics of the chemical vapor deposition of tin oxide films from Tetramethyltin (TMT) and oxygen was successfully modeled by a detailed gas-phase mechanism involving hydrogen and methane oxidation submechanisms as well as alkyltin reactions. The proposed mechanism is a branched chain process, initiated by pyrolysis of TMT and sustained by a sequence of reactions propagated by both organotin radicals and OH. (CH 3 ) 3 SnOH is posited as a key intermediate, whose decomposition and oxidation leads to film growth, as well as releasing hydrocarbon species which are further oxidized
